ORCID Profile
0000-0003-2801-3519
Current Organisation
University of Western Australia
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Electrical and Electronic Engineering | Photodetectors, Optical Sensors and Solar Cells | Photonics and Electro-Optical Engineering (excl. Communications) | Microelectronics and Integrated Circuits | Other Electronic Engineering | Microelectromechanical Systems (MEMS) | Nanotechnology | Nanotechnology | Integrated Circuits | Compound Semiconductors | Mechanical Engineering | Optics And Opto-Electronic Physics | Materials Engineering Not Elsewhere Classified | Materials Engineering not elsewhere classified | Materials Engineering | Optical And Photonic Systems | Interdisciplinary Engineering Not Elsewhere Classified | Communications Technologies | Elemental Semiconductors | Condensed Matter Physics—Electronic And Magnetic Properties; | Nanophotonics | Technology not elsewhere classified | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanoelectronics | Chemical Spectroscopy | Optical Physics | Condensed Matter Physics | Synthesis of Materials | Ceramics | Alloy Materials | Metals and Alloy Materials | Food Processing | Mechanical Engineering | Photonics, Optoelectronics and Optical Communications | Condensed Matter Physics—Structural Properties | Mathematical Physics | Biomaterials | Nanoscale Characterisation | Nanomaterials |
ANZSRC Socio-Economic Objective (SEO)
Integrated circuits and devices | Integrated Circuits and Devices | Emerging Defence Technologies | Expanding Knowledge in Engineering | Mineral Exploration not elsewhere classified | National Security | Physical sciences | Other | Environmentally Sustainable Plant Production not elsewhere classified | Other | Scientific Instruments | Communication equipment not elsewhere classified | Combined operations | Solar-photoelectric | Expanding Knowledge in Technology | Solar-Photovoltaic Energy | Air Force | Energy Storage (excl. Hydrogen) | Consumer Electronic Equipment (excl. Communication Equipment) | Natural yarns and fabrics | Computer hardware and electronic equipment not elsewhere classified | Other manufactured products | Industrial instrumentation | Medical instrumentation | Integrated systems | Sheet metal products | Expanding Knowledge in the Medical and Health Sciences | Scientific instrumentation | Communication services not elsewhere classified | Diagnostic Methods | Expanding Knowledge in the Physical Sciences | Medical Instruments
Related Links
Publications
MEMS-based tunable fabry-perot filters on silicon substrates
Publisher: IEEE
Date: 07-2008
Strain evaluation of plasma-deposited silicon nitride
Publisher: IEEE
Date: 2005
Laser-beam-induced current mapping of spatial nonuniformities in molecular beam epitaxy As-grown HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 06-2004
Determination of mechanical properties of silicon nitride thin films using nanoindentation
Publisher: SPIE
Date: 19-05-2005
DOI: 10.1117/12.604245
Incorporation and activation of arsenic in MBE-grown HgCdTe
Publisher: IOP Publishing
Date: 12-12-2008
Small HgCdTe infrared detector arrays from UWA
Publisher: IEEE
Date: 2002
Ultrathin-film ohmic contacts for GaAs FET
Publisher: IOP Publishing
Date: 14-11-1983
Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes
Publisher: AIP Publishing
Date: 03-2007
DOI: 10.1063/1.2435972
Abstract: The effect of isochronal thermal annealing on Ni∕n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level transient spectroscopy (DLTS) has been employed to monitor the evolution and annihilation of radiation-induced defects during thermal annealing. Annealing temperatures up 160 °C were found to improve device I-V characteristics however, thermal annealing above 250 °C resulted in: (a) Degradation of both forward and reverse I-V characteristics, (b) reduction in free carrier concentration, and (c) a decrease in the concentration of radiation-induced defects, as evidenced by DLTS measurements. Following annealing above 350 °C, the radiation-induced defects were no longer detectable using DLTS. Analysis of the thermally induced reduction in radiation-induced defect concentration indicated that the dominant defect-annihilation process has a mean activation energy of 1.8 eV. The physical origin of radiation-induced defects, and of defects involved in their annihilation process, is discussed in the perspective of published theoretical calculations of native defect diffusion mechanisms in GaN.
Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2011
RIE induced n-on-p junction HgCdTe photodiodes: Effects of passivant technology on bake stability
Publisher: SPIE
Date: 12-11-2001
DOI: 10.1117/12.448166
Optical and structural properties of CdTe grown by molecular beam epitaxy at low temperature for resonant-cavity-enhanced HgCdTe detectors
Publisher: Springer Science and Business Media LLC
Date: 18-05-2007
Strain effects in chemically lifted GaAs thin films
Publisher: American Physical Society (APS)
Date: 15-04-1990
Characterization and Modeling of Photostriction in Silicon Cantilevers Fabricated on Silicon-on-Insulator Substrates
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2015
On-chip read-out of picomechanical motion under ambient conditions
Publisher: Royal Society of Chemistry (RSC)
Date: 2015
DOI: 10.1039/C4NR05419A
Abstract: A novel method for monitoring the nanomechanical movement of suspended cantilever structures which has great potential for use in applications ranging from biological/chemical sensing to atomic force microscopy.
Laser beam induced current characterisation of HgCdTe processed using plasma techniques
Publisher: IEEE
Date: 2005
Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures
Publisher: Springer Science and Business Media LLC
Date: 07-2003
Characterisation of dark current in novel Hg1-x Cdx Te mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion
Publisher: Elsevier BV
Date: 06-2000
Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors
Publisher: Elsevier BV
Date: 09-2006
An optically resonant, grating-based technique for the sensitive detection of MEMS cantilever beam height
Publisher: IEEE
Date: 12-2012
Co-60 gamma-irradiation induced defects in MOCVD n-GaN
Publisher: SPIE
Date: 19-11-2001
DOI: 10.1117/12.448853
60Co Gamma Irradiation Effects on n-GaN Schottky Diodes
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2003
An optically resonant position read-out system for MEMS gas sensors
Publisher: SPIE
Date: 25-06-2014
DOI: 10.1117/12.2053135
MEMS based tunable infrared sensors (Invited Paper)
Publisher: SPIE
Date: 07-07-2005
DOI: 10.1117/12.624884
Nanoscratch-induced phase transformation of monocrystalline Si
Publisher: Elsevier BV
Date: 10-2010
Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition
Publisher: Elsevier BV
Date: 10-2007
Modelling of damping characteristics in silicon-gold bilayer cantilevers
Publisher: IEEE
Date: 12-2018
An optical MEMS cross-bar switch
Publisher: IEEE
Date: 07-2016
Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications
Publisher: SPIE
Date: 13-05-2011
DOI: 10.1117/12.883755
Widely Tunable MEMS-Based Fabry-Perot Filter
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2009
Adaptive focal plane array (AFPA) technologies for integrated infrared microsystems
Publisher: SPIE
Date: 05-05-2006
DOI: 10.1117/12.673010
Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Pérot optical filters
Publisher: IOP Publishing
Date: 14-01-2005
Model and Analysis of a High Sensitivity Resonant Optical Read-Out Approach Suitable for Cantilever Sensor Arrays
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2012
Mercury cadmium telluride resonant-cavity-enhanced photoconductive infrared detectors
Publisher: AIP Publishing
Date: 14-11-2005
DOI: 10.1063/1.2133914
Abstract: Resonant-cavity-enhanced Hg1−xCdxTe photoconductive detectors for midwave infrared wavelengths are investigated for use in multi- and hyper-spectral sensor systems. Resonant-cavity-enhanced performance is modeled, and compared with measured performance of fabricated devices. The responsivity of fabricated devices shows resonant cavity enhancement, with performance limited by surface recombination.
Thermally induced damages of PECVD SiNx thin films
Publisher: Springer Science and Business Media LLC
Date: 25-08-2011
DOI: 10.1557/JMR.2011.236
Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors
Publisher: IEEE
Date: 2005
Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching
Publisher: IEEE
Date: 2000
Investigation of surface passivation of HgCdTe MWIR photodiode arrays via a flood illumination technique
Publisher: IEEE
Date: 2005
Mobility spectrum techniques for characterising multi-layer semiconductor structures
Publisher: SPIE
Date: 19-11-2001
DOI: 10.1117/12.448863
Characterisation of reactive ion etching induced type conversion in HgCdTe
Publisher: IEEE
Date: 2000
Correlation of Laser Beam Induced Current with Current-Voltage Measurements in HgCdTe Photodiodes
Publisher: Springer Science and Business Media LLC
Date: 06-2004
Investigation of crystallized germanium thin films and germanium/silicon heterojunction devices for optoelectronic applications
Publisher: Elsevier BV
Date: 02-2015
Wide optical bandwidth asymmetric Fabry-Perot reflection modulator using the quantum confined Stark effect
Publisher: AIP Publishing
Date: 15-11-1998
DOI: 10.1063/1.368867
Abstract: A normally on, high-performance quantum confined Stark effect asymmetric Fabry–Pérot reflection modulator with enhanced optical bandwidth is reported. The wide optical bandwidth is achieved by utilizing the variation in refractive index in the vicinity of the heavy-hole exciton. The nominal operating wavelength is set in the region where the on-state refractive index starts to increase and allows the Fabry–Pérot resonance condition to be maintained over a wide wavelength range. An optical bandwidth of 5 nm is achieved for an operating voltage of 7 V, insertion loss & .5 dB, reflectance change & % and contrast ratio & dB, and 7 nm if the contrast ratio is relaxed to & dB. These values are twice as wide as previously reported for a quantum confined Stark effect modulator structure, and correspond to an operating temperature range of 25 °C compared to 10 °C for conventional structures.
Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films
Publisher: AIP Publishing
Date: 15-08-2005
DOI: 10.1063/1.2006972
Abstract: This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young’s modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young’s modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.
Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion
Publisher: Springer Science and Business Media LLC
Date: 07-2003
Targeted sacrificial layer etching for MEMS release using microfluidic channels
Publisher: SPIE
Date: 07-12-2013
DOI: 10.1117/12.2033756
Mechanical characteristics of filter structures for MEMS adaptive infrared detectors
Publisher: SPIE
Date: 21-12-2008
DOI: 10.1117/12.758816
Long-wavelength infrared Fabry-Perot etalon for multi-spectral thermal imaging
Publisher: SPIE
Date: 07-12-2013
DOI: 10.1117/12.2033755
Mechanical design and finite element analysis of tunable Fabry-Perot MEMS structures for adaptive infrared detectors
Publisher: IEEE
Date: 2005
Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes
Publisher: Springer Science and Business Media LLC
Date: 09-05-2007
Comparison of dynamic and static operation of a novel optical read-out technology for micromachined cantilever sensors
Publisher: IEEE
Date: 12-2010
Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation
Publisher: Inderscience Publishers
Date: 2009
Design of externally tuned asymmetric fibre Fabry-Perot electroabsorption optical modulators
Publisher: Institution of Engineering and Technology (IET)
Date: 12-1998
Environmental stability and cryogenic thermal cycling of low-temperature plasma-deposited silicon nitride thin films
Publisher: AIP Publishing
Date: 03-2006
DOI: 10.1063/1.2179969
Abstract: Stress in low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNx) thin films subject to cryogenic thermal cycling (100–323K) has been measured. It is observed that the SiNx deposition temperature strongly influences the thin film characteristics. For films deposited between 200 and 300°C, the thermal expansion coefficient is similar to that of silicon over the 180–323K temperature range. The room temperature thermal expansion coefficient of SiNx films is found to decrease sublinearly from 5.2×10−6to2.6×10−6K−1 as the temperature of the deposition process is increased from 50to300°C. The negative correlation between deposition temperature and thin film thermal expansion coefficient, and the positive correlation between deposition temperature and the thin film Young’s modulus inferred from nanoindentation are postulated to be associated with the local bonding environment within the thin film. The stress state of SiNx films deposited above 150°C is stable under atmospheric conditions, in contrast to SiNx films deposited below 100°C, which under atmospheric storage conditions become more tensile with time due to oxidation. In addition, SiNx thin films deposited below 100°C exhibit higher tensile stress values in vacuum than at atmospheric pressure, and vacuum annealing at 50°C of films deposited below 100°C introduces further tensile stress changes. These stress changes have been shown to be fully reversible upon reexposure to high purity nitrogen, helium, argon, oxygen, or laboratory atmosphere, and are likely to be associated with thin film porosity.
Microspectrometers – A technology for low power, portable soil and cropmonitoring
Publisher: OSA
Date: 2014
MWIR HgCdTe Photodiodes based on high-density plasma-induced type conversion
Publisher: IOP Publishing
Date: 22-08-2008
Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs
Publisher: Wiley
Date: 11-04-2005
Ge/ZnS-Based Micromachined Fabry-Perot Filters for Optical MEMS in the Longwave Infrared
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2015
Macromodel for the transient simulation of electrostatically actuated fixed-fixed beams
Publisher: IEEE
Date: 09-2013
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin’s technique
Publisher: Elsevier BV
Date: 09-0011
60Co gamma-irradiation-induced defects in n-GaN
Publisher: AIP Publishing
Date: 31-05-2002
DOI: 10.1063/1.1483390
Abstract: Transient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of these defects manifest significant broadening, their parameters are consistent with reported electron-irradiation-induced nitrogen-vacancy related centers. Three deep-level defects present before irradiation exposure with activation energies of 265, 355, and 581 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).
Engineering 1/f noise in porous silicon thin films for thermal sensing applications
Publisher: Elsevier BV
Date: 09-2021
Erratum: Strain effects in chemically lifted GaAs thin films
Publisher: American Physical Society (APS)
Date: 15-08-1990
Fabry-Perot MEMS microspectrometers spanning the SWIR and MWIR
Publisher: SPIE
Date: 27-04-2007
DOI: 10.1117/12.718969
Diffusion length measurements using laser beam induced current
Publisher: IEEE
Date: 2000
A simplified fabrication process for HgCdTe photoconductive detectors using CH4/H2 reactive ion etching induced blocking contacts
Publisher: IOP Publishing
Date: 03-05-2001
Recent developments towards low-cost MEMS spectrometers
Publisher: SPIE
Date: 21-05-2014
DOI: 10.1117/12.2053505
Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy
Publisher: Elsevier BV
Date: 02-1998
A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe
Publisher: Springer Science and Business Media LLC
Date: 06-02-2010
Long-term environmental stability of residual stress of SiNx, SiOx, and Ge thin films prepared at low temperatures
Publisher: Elsevier BV
Date: 06-2009
Widely tunable Fabry-Perot optical filter using fixed-fixed beam actuators
Publisher: IEEE
Date: 08-2008
Integrated, Resonant Optical Readout Applicable to Large Arrays of MEMS Beams
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2012
Electrical type conversion of p-type HgCdTe induced by nanoimprinting
Publisher: AIP Publishing
Date: 05-2011
DOI: 10.1063/1.3582062
Abstract: A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 μm to 50 μm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.
Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detector
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2008
On the accuracy of decay constant measurement by swept-cavity heterodyne cavity ringdown spectroscopy
Publisher: SPIE
Date: 13-05-2011
DOI: 10.1117/12.883601
Short-wavelength infrared tuneable filters on HgCdTe photoconductors
Publisher: Optica Publishing Group
Date: 28-11-2005
Abstract: The design, micro-fabrication, and electronic and optical performance of a tuneable short-wavelength infrared Fabry-Pérot microresonator on a mercury cadmium telluride photoconductor is presented. The maximum processing temperature of 125 degrees C has negligible effect on the electronic and optical performance of photoconductor test structures. Maximum responsivity, effective carrier lifetime and detectivity are 60x103 VW-1, 2x10-5 s and 8x1010 cmHz1/2W-1, respectively. The maximum effective carrier lifetime and specific detectivity are in good agreement with the theoretical maxima. Uncooled device operation is possible since responsivity is observed not to improve with thermo-electric cooling. Spectral tuning of the micro-filters is demonstrated over the wavelength range 1.7 to 2.2 mum using drive voltages up to 8 V, with the full-width-half-maximum of the resonance approximately 100 nm. Membrane deflection can be up to 40% of the cavity width.
Reciprocal space mapping of MBE-grown HgCdTe heterostructures
Publisher: IEEE
Date: 2005
Mechanochemical synthesis and characterization of GaN nanocrystals
Publisher: Springer Science and Business Media LLC
Date: 2002
A silicon based surface micro-machined distributed Bragg reflector for MEMS spectroscopic applications
Publisher: IEEE
Date: 12-2013
Investigation of cerium-substituted europium iron garnets deposited by biased target ion beam deposition
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2014
Characterisation of MBE grown HgCdTe using scanning laser microscopy
Publisher: IEEE
Date: 2005
Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs
Publisher: IEEE
Date: 2002
Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching
Publisher: Springer Science and Business Media LLC
Date: 02-2004
Issues in source calibration for biased target ion beam deposition
Publisher: IEEE
Date: 12-2014
Photoluminescence of HgTe Hg1-x Cdx Te superlattices and a study of minibands
Publisher: American Physical Society (APS)
Date: 13-03-2007
Annealing and shunting in RCE HgCdTe photoconductors
Publisher: IEEE
Date: 12-2006
Structural and optical characterisation of (001) HgTe-Hg 1-xCdxTe superlattices grown by molecular beam epitaxy
Publisher: IEEE
Date: 2005
Investigation of HgTe-HgCdTe Superlattices by High-Resolution X-Ray Diffraction
Publisher: Springer Science and Business Media LLC
Date: 06-2006
Deposition heating effect on CdS thin films prepared by thermal evaporation for CdTe solar cells
Publisher: IEEE
Date: 12-2014
Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy
Publisher: AIP Publishing
Date: 05-01-1998
DOI: 10.1063/1.120642
Abstract: Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH4/H2, 0.4 W/cm2), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80–300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD™ DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe.
Structural Materials for NEMS/MEMS Devices
Publisher: IEEE
Date: 2006
Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films
Publisher: AIP Publishing
Date: 15-12-2006
DOI: 10.1063/1.2402581
Abstract: This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the “random mixing” model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the “random bonding” model.
A novel technique for degenerate p-type doping of germanium
Publisher: Elsevier BV
Date: 11-2013
Effect of FIB milling on MEMS SOI Cantilevers
Publisher: IEEE
Date: 12-2012
Performance predictions for monolithic thin-film CdTe/Ge tandem solar cells
Publisher: SPIE
Date: 17-06-2010
DOI: 10.1117/12.871079
Noise modeling in HgCdTe heterostructure devices
Publisher: AIP Publishing
Date: 31-10-2003
DOI: 10.1063/1.1619198
Abstract: A numerical method to analyze noise generation in semiconductor devices and based on “transport equations for fluctuations” is presented. The spectral intensity of temperature fluctuations, fluctuations of background illumination, fluctuations of thermal g–r processes (including Auger, radiative, and S–R mechanisms) as well as fluctuations of electron and hole mobility were taken into account. Noise spectra of midwavelength HgCdTe heterostructure photoconductors were measured over a wide temperature range, and the numerical model was fitted to these data. The results of the numerical model show the spatial distributions and the relative contributions of each source of fluctuation to the total noise measured in the devices.
Nanostructural Characteristics and Mechanical Properties of Low Temperature Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films
Publisher: American Scientific Publishers
Date: 06-2009
Abstract: This paper reports nanostructural characteristics and mechanical properties of the PECVD silicon nitride thin films deposited at relatively low temperatures. Nanostructures of the films were examined using high resolution transmission electron microscopy. Chemical bonding structures of the films were studied using Fourier Infrared Transmission Spectrum (FTIR) analysis. Mechanical properties of the films, such as creep behavior and frictional resistance, were investigated using nanoindentation and nanoscratch. The results showed that the variation in deposition temperature significantly affected the mechanical properties of the films, though all the films exhibited to have similar homogenous amorphous structures with no physical defect observed even at atomic scale. There existed strong correlations between the mechanical properties and the hydrogen concentration in the thin films.
Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures
Publisher: Springer Science and Business Media LLC
Date: 06-1998
Bending instability of an embedded double-walled carbon nanotube based on Winkler and van der Waals models
Publisher: Elsevier BV
Date: 07-2005
Large-Area MEMS Tunable Fabry-Perot Filters for Multi/Hyperspectral Infrared Imaging
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2017
Magneto-Transport Characterization of p-Type HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 19-05-2007
Strain simulation and MBE growth of CdTe on GaSb substrates
Publisher: IEEE
Date: 12-2014
MEMS-based microspectrometers for infrared sensing
Publisher: IEEE
Date: 08-2007
Characterisation of Arsenic Doped HgCdTe Grown by Molecular Beam Epitaxy
Publisher: IEEE
Date: 12-2006
Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2005
MEMS-based microspectrometer technologies for NIR and MIR wavelengths
Publisher: IOP Publishing
Date: 07-07-2009
DOI: 10.1088/0022-3727/42/13/133001
Abstract: Commercially manufactured near-infrared (NIR) instruments became available about 50 years ago. While they have been designed for laboratory use in a controlled environment and boast high performance, they are generally bulky, fragile and maintenance intensive, and therefore expensive to purchase and maintain. Micromachining is a powerful technique to fabricate micromechanical parts such as integrated circuits. It was perfected in the 1980s and led to the invention of micro electro mechanical systems (MEMSs). The three characteristic features of MEMS fabrication technologies are miniaturization, multiplicity and microelectronics. Combined, these features allow the batch production of compact and rugged devices with integrated intelligence. In order to build more compact, more rugged and less expensive NIR instruments, MEMS technology has been successfully integrated into a range of new devices. In the first part of this paper we discuss the UWA MEMS-based Fabry–Pérot spectrometer, its design and issues to be solved. MEMS-based Fabry–Pérot filters primarily isolate certain wavelengths by sweeping across an incident spectrum and the resulting monochromatic signal is detected by a broadband detector. In the second part, we discuss other microspectrometers including other Fabry–Pérot spectrometer designs, time multiplexing devices and mixed time/space multiplexing devices.
Uniform Dispersion of Lanthanum Hexaboride Nanoparticles in a Silica Thin Film: Synthesis and Optical Properties
Publisher: American Chemical Society (ACS)
Date: 19-10-2012
DOI: 10.1021/AM301481J
Abstract: Silica thin films containing uniformly dispersed lanthanum hexaboride (LaB₆) nanoparticles have been prepared by spin-coating a sol-gel silica solution containing cetyltrimethyl ammonium bromide (CTAB)-stabilized LaB₆ nanoparticles onto a glass substrate followed by a standard heat treatment. The production of this thin film involved three steps: (i) a CTAB-stabilized LaB₆ nanoparticle dispersion was prepared in water and then dried, (ii) the dried nanoparticles were redispersed in a small amount of water and mixed with tetraethoxyorthosilane (TEOS), ethanol, and a little acid to initiate the sol-gel reaction, and (iii) this reaction mixture was spun to produce a thin film and then was annealed. A range of techniques such as zeta potential, laser sizing, energy-filtered transmission electron microscopy (EFTEM), scanning TEM (STEM), scanning electron microscopy (SEM), and energy dispersive X-ray spectrum (EDS) were employed to characterize the particle's size, elemental composition, and stability and the optical properties of silica thin films with LaB₆ nanoparticles. On the basis of the optical transmittance and reflectance spectra of an annealed silica thin film with LaB₆ nanoparticles, the annealed thin films clearly showed positive absorption of radiation in the near infrared (NIR) region meeting a main objective of this study. A potential optical micro-electromechanical sensing system in the NIR range can be realized on the basis of this silica thin film with LaB₆ nanoparticles.
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
Publisher: AIP Publishing
Date: 15-09-1997
DOI: 10.1063/1.366137
Abstract: Experimental magnetic field dependent Hall and resistivity data is presented for two modulation-doped AlGaN/GaN heterostructures in the temperature range from 6 to 300 K and for a magnetic field up to 12 T. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface and within the underlying GaN layer are readily separated and characterized using quantitative mobility spectrum analysis. The observed transport parameters of the 2DEG are explained using the classical band theory for a degenerate electron gas. Analysis of the temperature dependencies of mobility and electron concentration in the GaN layer and 2DEG indicates that electron transport in the GaN layer is dominated by carriers in the conduction band for the case of low-doping (& cm−3), and by conduction via an impurity band for highly doped material (& cm−3). The simultaneous analysis of the multilayer AlGaN/GaN structure applied in this work renders the results applicable directly to modulation-doped field-effect transistors based on similar structures.
Suspended Large-Area MEMS-Based Optical Filters for Multispectral Shortwave Infrared Imaging Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2015
Single crystal and amorphous Ge for use in stand-alone and thin film tandem solar cells
Publisher: IEEE
Date: 12-2012
Preparation and characterization of cerium substituted bismuth dysprosium iron garnets for magneto-optic applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2016
Microcantilevers as a Platform for the Detection of Hydrogen
Publisher: IEEE
Date: 12-2014
Low temperature saturation of p-n junction laser beam induced current signals
Publisher: Elsevier BV
Date: 03-2004
Recent advances in SWIR MEMS-based tunable Fabry-Pérot microspectrometers
Publisher: SPIE
Date: 13-05-2011
DOI: 10.1117/12.883734
Characterization of low-temperature bulk micromachining of silicon using an SF6/O2 inductively coupled plasma
Publisher: IOP Publishing
Date: 26-07-2012
Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation
Publisher: Springer Science and Business Media LLC
Date: 06-03-2015
Process condition dependence of mechanical and physical properties of silicon nitride thin films
Publisher: AIP Publishing
Date: 15-11-2007
DOI: 10.1063/1.2817621
Abstract: This study uses a resonance method to determine Young’s modulus (E), shear modulus (G), and Poisson’s ratio (ν) of plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films deposited under varying process conditions. The resonance method involves exciting the bending and torsional vibration modes of a microcantilever beam fabricated from a film. The E and G values can be extracted directly from the bending and torsional vibration modes, and the ν value can be determined from the calculated E and G values. The density (ρ) of the films was determined using a quartz crystal microbalance method. In order to determine the validity of the resonance method, finite element modeling was used to determine its dependence on microcantilever beam dimensions. Over a deposition temperature range of 100–300°C, measured E, G, and ν values varied within 54–193GPa, 22–77GPa, and 0.20–0.26 with changes in process conditions, respectively. Over the same deposition range, measured ρ values varied within 1.55–2.80g∕cm3 with changes in process conditions.
Nondestructive determination of P-N junction depth using laser beam induced current and lateral photovoltage measurements
Publisher: IEEE
Date: 2002
A Monolithic Dual-Band HgCdTe Infrared Detector Structure
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-1997
DOI: 10.1109/55.596934
Non-Contact Evaluation of Photodiode Performance by Laser Beam Induced Current Imaging
Publisher: IEEE
Date: 2002
Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer
Publisher: IOP Publishing
Date: 10-08-2001
Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe
Publisher: IEEE
Date: 12-2012
Unusually strong excitonic absorption in molecular-beam-epitaxy-grown, chemically lifted GaAs thin films
Publisher: American Physical Society (APS)
Date: 15-11-1990
HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching
Publisher: SPIE
Date: 12-2002
DOI: 10.1117/12.452276
Recent developments in MEMS-based tunable IR detectors
Publisher: IEEE
Date: 10-2008
Finite element analysis of tunable Fabry Perot MEMS structures
Publisher: IEEE
Date: 2000
Charge trapping centres in γ-irradiated Gallium Nitride grown by MOCVD
Publisher: IEEE
Date: 2000
Nano-Porous Silicon antireflection coatings for microlens application
Publisher: IEEE
Date: 2006
Tunable Fabry-Perot filters operating in the 3 to 5 μm range for infrared micro-spectrometer applications
Publisher: SPIE
Date: 21-04-2006
DOI: 10.1117/12.662539
Morphological and Optical Transformation of Gas Assisted Direct Laser Written Porous Silicon Films
Publisher: Wiley
Date: 17-04-2023
Abstract: Direct laser writing (DLW) of mesoporous porous silicon (PS) films is shown to selectively create spatially separated nitridized and carbonized features on a single film. Nitridized or carbonized features are formed during DLW at 405 nm in an ambient of nitrogen and propane gas, respectively. The range of laser fluence required to create varying feature sizes while avoiding damage to the PS film is identified. At high enough fluence, nitridation using DLW has been shown as an effective method for laterally isolating regions on the PS films. The efficacy in preventing oxidation once passivated is investigated via energy dispersive X‐ray spectroscopy. Changes in composition and optical properties of the DL written films are investigated using spectroscopic analysis. Results show carbonized DLW regions have a much higher absorption than as‐fabricated PS, attributed to pyrolytic carbon or transpolyacetylene deposits in the pores. Nitridized regions exhibit optical loss similar to previously published thermally nitridized PS films. This work presents methods to engineer PS films for a variety of potential device applications, including the application of carbonized PS to selectively engineer thermal conductivity and electrical resistivity and of nitridized PS to micromachining and selective modification of refractive index for optical applications.
Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes
Publisher: AIP Publishing
Date: 07-2005
DOI: 10.1063/1.1946201
Abstract: The effect of an abrupt CdTe∕HgCdTe passivation heterointerface on generation recombination and dark currents in n-on-p midwave infrared photodiodes with 5.2-μm cut-off wavelength has been investigated. Experimentally, it was observed that the zero-bias-dynamic resistance, R0, at low temperatures scales with the perimeter of the n-on-p junction, rather than with the junction area, suggesting that surface effects are dominant. The diode current–voltage characteristics at low temperatures indicate significant contributions from tunneling effects, which is the dominant leakage current mechanism for reverse bias greater than approximately 30mV. These two observations suggest that the region where the junction terminates at the CdTe∕HgCdTe abrupt interface is responsible for the above effects. A two-dimensional model has been developed to investigate the dark current mechanisms in the vicinity of the junction termination at CdTe∕HgCdTe interface, which also takes into account the effect of dislocations on generation-recombination processes. Calculated profiles of the energy bands and electric field along different cross sections of the photodiode indicate that the electric field achieves a maximum value of the order of mid −105V∕cm in the region where the junction terminates at the CdTe∕HgCdTe interface. The presence of such a high localized electric field in this area decreases the ionization energy of trap levels in the band gap and, hence, increases efficiency of the Shockley–Read–Hall generation-recombination processes. In addition to diffusion, generation recombination, and trap-assisted tunneling mechanisms, the calculations of dynamic resistance include Poole–Frenkel and phonon-trap-assisted tunneling effects. The best fit to the zero bias dynamic resistance versus temperature results has been obtained using an aerial dislocation density in the bulk of the HgCdTe layer equal to 106cm−2. Although the direct band-to-band tunneling and impact ionization processes were also considered, their contributions are shown to be insignificant.
Plasma annealing as an effective method for the crystallization of bismuth iron garnet films
Publisher: IEEE
Date: 12-2012
Substrate heating effects on properties of CdS thin films prepared by thermal evaporation for photovoltaic applications
Publisher: IEEE
Date: 06-2015
Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe
Publisher: American Vacuum Society
Date: 05-2008
DOI: 10.1116/1.2841525
Abstract: The interaction between molecular beams present in the growth of HgCdTe was studied using reflection mass spectroscopy (REMS). The incident Hg flux was found to strongly influence the amount of Te and Cd reflected from the growth surface, and also, the incident Te flux influences the amount of Cd reflected from the surface. Based on these observations, it appears that the CdTe growth rate is influenced by the amount of excess Te and/or Hg available at the growth surface. A technique to control accurately the layer mole fraction by measuring the ratio of Cd to Cd+Te fluxes during growth has been investigated. The results of the postgrowth layer characterization by secondary ion mass spectroscopy and infrared transmission indicate a strong correlation between the REMS ratio and the mole fraction of the resulting layer. This technique has successfully been used to correct for long term and short term drifts in effusion cell output.
CHARACTERISTICS OF LOW TEMPERATURE PECVD SILICON NITRIDE FOR MEMS STRUCTURAL MATERIALS
Publisher: World Scientific Pub Co Pte Lt
Date: 30-10-2006
DOI: 10.1142/S0217979206040398
Abstract: Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.
Resonant-cavity-enhanced HgCdTe photodetectors
Publisher: SPIE
Date: 05-05-2006
DOI: 10.1117/12.661443
Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling
Publisher: No publisher found
Date: 2005
Towards MEMS based infrared tuneable micro-spectrometers
Publisher: SPIE
Date: 11-2002
DOI: 10.1117/12.476343
Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique
Publisher: IEEE
Date: 09-2009
Micro-electromechanical systems-based microspectrometers covering wavelengths from 1500nm to 5000nm
Publisher: SPIE
Date: 26-09-2007
DOI: 10.1117/12.732956
Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers
Publisher: Springer Science and Business Media LLC
Date: 08-08-2008
Nanoscratch-induced deformation of single crystal silicon
Publisher: American Vacuum Society
Date: 05-2009
DOI: 10.1116/1.3049517
Abstract: The nanoscratching-induced deformation of monocrystalline Si has been investigated using transmission electron microscopy (TEM). The results indicate that amorphization and formation of crystalline defects are two dominant phenomena associated with the scratching processes. TEM analyses reveal that amorphization occurs at extremely small scratching loads. Stacking faults and twins are nucleated at a smaller load than that for dislocation. Dislocations start to nucleate along Si {111} planes when the normal scratching load is greater than a threshold value and penetrate deeper into the Si subsurface with the increasing load. Both normal load and tip radius have significant influence on the deformation, which are somehow different from those associated with nanoindentation and nanogrinding.
Interpretation of Current Flow in Photodiode Structures Using Laser Beam-Induced Current for Characterization and Diagnostics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2006
Characterisation of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.522217
Optimization of ICPCVD Amorphous Silicon for Optical MEMS Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2015
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures
Publisher: Elsevier BV
Date: 07-2000
Responsivity and lifetime of resonant-cavity-enhanced HgCdTe photodetectors
Publisher: IEEE
Date: 2006
Some new concepts of heat-flow spreading in GaAs FET structures
Publisher: Informa UK Limited
Date: 07-1984
Thermal Stability of PECVD SiN/sub x/ Films
Publisher: IEEE
Date: 2006
Large-Area MEMS-Based Distributed Bragg Reflectors for Short-Wave and Mid-Wave Infrared Hyperspectral Imaging Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2015
Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 07-2002
Contribution of hole trap to persistent photoconductivity in n-type GaN
Publisher: AIP Publishing
Date: 30-06-2004
DOI: 10.1063/1.1760840
Abstract: The transient behavior of persistent photoconductivity (PPC) in unintentionally doped GaN has been investigated for different excitation intensities and at different temperatures. The observed PPC buildup behavior can be described by a sum of two exponential functions with a long and a short time constant, which are attributed separately to the contributions of an electron trap and a hole trap, respectively. The concentrations of the electron trap and hole trap at 300 K are 1.6×1015 and 2.6×1015 cm−3, with a thermal activation energy level of 195.5 and 111.6 meV, respectively. Temperature dependence of the PPC buildup processes indicates that from 340 K down to about 240 K the rate parameters associated with the PPC buildup are dominated by the thermally activated capture mechanisms of defects. In contrast they are nearly independent of temperature below 240 K.
1/f noise in HgCdTe infrared gated photodiodes
Publisher: SPIE
Date: 27-04-2007
DOI: 10.1117/12.720516
Dielectric thin films for MEMS-based optical sensors
Publisher: Elsevier BV
Date: 04-2007
Optical MEMS Technologies for Electrically Tunable Multi-Spectral Short-Wave Infrared Sensors and Arrays
Publisher: World Scientific Pub Co Pte Lt
Date: 12-2008
DOI: 10.1142/S0129156408005989
Abstract: Optical MEMS technology combined with broadband infrared sensor technology is used to realize wavelength-tunable infrared sensors. This paper describes the ongoing research into one such sensor design based on an electrically tunable Fabry-Pérot cavity. Theory, measured results and future research directions are presented and discussed for the single-sensor design currently being developed, in the context of the intended application of this technology the development of lightweight, portable and robust multi-spectral imaging systems.
MEMS-based Tunable Fabry-Perot Filters for Adaptive Multispectral Thermal Imaging
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2016
Laser Beam Induced Current Imaging of Reactive Ion Etching Induced n-Type Doping in HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 06-1998
Photoresponse in photoconductor devices fabricated from HgTe-HgCdTe superlattices
Publisher: AIP Publishing
Date: 24-01-2011
DOI: 10.1063/1.3540655
Abstract: Results of photoresponse measurements performed on long-wave infrared photoconductors fabricated from HgTe-HgCdTe superlattices grown by molecular beam epitaxy are presented. Absolute spectral photoresponse measurements as a function of temperature and applied electric field have be undertaken, with the peak photoresponse of 3.3×103 V/W measured at 100 K. Sweepout effects were observed for fields greater than 20 V/cm and quantum efficiencies approaching 80% for 5 μm thick devices have been predicted from absorption measurements of grown material.
GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 11-02-2014
Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice
Publisher: AIP Publishing
Date: 15-09-2012
DOI: 10.1063/1.4752869
Abstract: Temperature (11–250 K) and excitation power (5–480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe/Hg0.05Cd0.95Te superlattice (SL) s le in a spectral range of 5–18 μm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively.
Silicon-Air-Silicon Distributed Bragg Reflectors for Visible and Near Infrared Optical MEMS
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2015
Dark current modelling of midwave infrared HgCdTe gated photodiodes
Publisher: IEEE
Date: 12-2006
Sidewall effects of MBE grown CdTe for MWIR HgCdTe photoconductors
Publisher: IEEE
Date: 07-2008
Evaluation of plasma deposited silicon nitride thin films for microsystems technology
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2005
A monolithic dual-band HgCdTe infrared detector
Publisher: Elsevier BV
Date: 02-1998
Optical actuation of silicon cantilevers: modelling and experimental investigation
Publisher: SPIE
Date: 17-05-2013
DOI: 10.1117/12.2018431
Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures
Publisher: IEEE
Date: 2002
Modelling of dark currents in LWIR HgCdTe photodiodes
Publisher: IEEE
Date: 2002
Tailoring anchor etching profiles during MEMS release using microfluidic sheathed flow
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2014
A WDM capable integrated optical readout of a MEMS sensor
Publisher: Elsevier BV
Date: 2012
Determination of HgCdTe Elasto-Plastic Properties using Nanoindentation
Publisher: Springer Science and Business Media LLC
Date: 06-2006
Characterisation of SiNx -HgCdTe interface in metal-insulator-semiconductor structure
Publisher: IEEE
Date: 12-2014
Process Control of Cantilever Deflection for Sensor Application Based on Optical Waveguides
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2013
HgCdTe MWIR PECVD SiN passivated photodiodes
Publisher: IEEE
Date: 07-2008
Resonant cavity-enhanced mercury cadmium telluride detectors
Publisher: Springer Science and Business Media LLC
Date: 06-2004
Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe
Publisher: AIP Publishing
Date: 15-05-1998
DOI: 10.1063/1.367389
Abstract: Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type regions created during RIE processing. For the RIE processing conditions used (400 mT, CH4/H2, 90 W), p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 °C for 17 h, LBIC measurements clearly indicated that no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a uniform p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA−ND=2×1016 cm−3, μ=350 cm2 V−1 s−1).
Targeted machining during MEMS device fabrication using PDMS microfluidic cassettes
Publisher: IEEE
Date: 12-2014
Optical quenching of photoconductivity in undoped n-GaN
Publisher: AIP Publishing
Date: 20-01-2004
DOI: 10.1063/1.1635977
Abstract: The optical quenching of photoconductivity in undoped n-type GaN has been investigated. It was observed that for increasing 360 nm background intensity, at constant 632 nm quenching illumination intensity, the quenching increased for intensities up to 1012 photons cm−2 s−1 and decreased thereafter. At low background illumination intensities, the transient in photoconductivity induced by the quenching illumination exhibits a sharp rise followed by a slow decay removal of the quenching illumination was also noted to induce a sharp photocurrent drop followed by a slow recovery to the photocurrent level induced by the background illumination alone. The quenching effect at constant background and quenching illumination wavelength and intensity is noted to keep nearly constant at low temperature and decrease rapidly when temperature is higher than 270 K. Furthermore, measurement of the spectral distribution of the quenching effect indicates the existence of a broadband hole trap centered around 1.5 eV above the valence band. To explain the observed experimental behavior, the conventional hole trap and recombination center model was extended to include an electron trap. This extended model was found to accurately predict the experimental results.
Optical characterization of Fabry-Pe/spl acute/rot MEMS filters integrated on tunable short-wave IR detectors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2006
High resolution position monitoring of suspended MEMS towards biological and chemical sensors
Publisher: Springer Science and Business Media LLC
Date: 2014
DOI: 10.1557/OPL.2014.98
Abstract: We present an integrated readout technique for interrogating the suspension height of micro-electro-mechanical systems (MEMS) structures. This readout technique is envisaged to be useful in applications such as MEMS-based biological and chemical sensing, where it is necessary to obtain the accurate position of a MEMS beam. The approach is based on the suspended MEMS structure modulating light transmission in an underlying optical waveguide via Fabry-Perrot phenomena. The performance of the technique is predicted via finite difference time domain (FDTD) simulations the results of which are confirmed by experimental measurements.
A novel microspectrometer technology for IR spectral imaging applications
Publisher: QIRT Council
Date: 2012
MEMS-based Fabry-Perot microspectrometers for agriculture
Publisher: SPIE
Date: 05-2009
DOI: 10.1117/12.819909
A novel optical read-out technology for large arrays of micromachined cantilever sensors
Publisher: IEEE
Date: 08-2011
Determination of residual stress in low temperature PECVD silicon nitride thin films
Publisher: SPIE
Date: 02-04-2004
DOI: 10.1117/12.523327
Transferable silicon nitride microcavities
Publisher: Elsevier BV
Date: 07-2000
The effects of vacuum baking on the I-V characteristics of LWIR HgCdTe photodiodes
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.522262
Strain and orientation effects in mercury cadmium telluride grown by molecular beam epitaxy
Publisher: IEEE
Date: 12-2006
High density plasma processing of p-Hg0.7 Cd0.3 Te
Publisher: IEEE
Date: 12-2006
Extending the tuning range of SWIR microspectrometers
Publisher: SPIE
Date: 27-04-2007
DOI: 10.1117/12.718972
Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 07-2002
Mercury cadmium telluride/cadmium telluride distributed bragg reflectors for use with resonant cavity-enhanced detectors
Publisher: Springer Science and Business Media LLC
Date: 06-2005
High-Resolution X-Ray Diffraction Studies of Molecular Beam Epitaxy-Grown HgCdTe Heterostructures and CdZnTe Substrates
Publisher: Springer Science and Business Media LLC
Date: 06-2005
Photostriction actuation of silicon-germanium bilayer cantilevers
Publisher: AIP Publishing
Date: 26-03-2019
DOI: 10.1063/1.5075525
Abstract: This work presents a study of photostriction-based optical actuation in bilayer cantilevers made of silicon and germanium thin-films and follows previous work in this area on silicon cantilevers. This experimental and theoretical study examines the role of the silicon-germanium heterojunction in optical actuation. It is shown that the germanium layer dominates the mechanical response of the device, which can be exploited to achieve enhanced optical actuation in cantilevers.
Minority carrier lifetime in abrupt MBE grown HgCdTe heterostructures
Publisher: SPIE
Date: 12-2002
DOI: 10.1117/12.473283
Kinetics of persistent photoconductivity in GaN grown by MOCVD
Publisher: IEEE
Date: 2000
Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
Publisher: IOP Publishing
Date: 13-12-2006
Towards a laser beam induced current test structure for the nondestructive determination of junction depth in HgCdTe photodiodes
Publisher: IEEE
Date: 2000
A monolithically integrated HgCdTe SWIR photodetector and tunable MEMS-based optical filter
Publisher: SPIE
Date: 31-05-2005
DOI: 10.1117/12.603519
Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation
Publisher: Springer Science and Business Media LLC
Date: 07-2003
An inexpensive midwave infrared HgCdTe camera
Publisher: IEEE
Date: 2000
Fabrication process for optically low loss Si cantilever waveguide
Publisher: IEEE
Date: 08-2011
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2005
Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording
Publisher: Springer Science and Business Media LLC
Date: 2014
DOI: 10.1557/OPL.2014.145
Abstract: We report on the preparation and characterization of crystalline bismuth oxide thin films via Biased Target Ion Beam Deposition method. A focused blue laser (405nm) is used to write an array of dots in the bismuth oxide thin film and demonstrate clear and circular recording marks in form of “bubbles” or “little volcanos” (FWHM ∼500nm). Results indicate excellent static recording characteristics, writing sensitivity and contrast. The recording mechanism is investigated and is believed to be related to laser-induced morphology change.
Optical MEMS technologies for multi-spectral infrared sensors
Publisher: IEEE
Date: 09-2010
Dispersion of lanthanum hexaboride nanoparticles in water and in sol-gel Silica arrays
Publisher: IEEE
Date: 12-2010
Design and optimisation of a MEMS-based tunable Fabry-Pérot infrared filter
Publisher: IEEE
Date: 12-2006
Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer
Publisher: Springer Science and Business Media LLC
Date: 12-06-2007
Investigation of laser beam-induced current techniques for heterojunction photodiode characterization
Publisher: AIP Publishing
Date: 08-2005
DOI: 10.1063/1.1993754
Abstract: A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current (LBIC) signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results.
Nanoimprint induced electrical type conversion in HgCdTe
Publisher: IEEE
Date: 12-2010
Scanning Laser Microscopy of Reactive Ion Etching Induced n-Type Conversion in Vacancy-Doped p-Type HgCdTe
Publisher: AIP Publishing
Date: 23-06-1997
DOI: 10.1063/1.119159
Abstract: Laser-beam-induced-current measurements have been used to characterize the extent of reactive ion etching (RIE) induced type conversion in vacancy-doped p-type Hg0.69Cd0.31Te. The technique allows the spatial extent of RIE induced type conversion to be determined and the donor level concentration profile within the n-type converted region to be estimated. For the RIE processing conditions used (410 mT, CH4/H2, 0.4 W/cm2) and an etch depth of 0.2 μm, n-type conversion extending ∼1.5 μm into the semiconductor was observed. The simple and powerful approach developed in this work is of general application to the study of semiconductor junctions, and can be applied to a range of processing techniques used in the formation of p-n junctions in HgCdTe (e.g., epitaxially grown heterojunctions, ion implantation, ion milling and Hg in-diffusion).
Doubly-supported beam actuators for MEMS-based tunable Fabry-Perot etalons
Publisher: IEEE
Date: 12-2006
Capacitive sensing circuit for closed-loop control of wide tuning range microspectrometers
Publisher: SPIE
Date: 23-04-2010
DOI: 10.1117/12.850589
Optical Performance of a MEMS Tunable IR Microspectrometer
Publisher: IEEE
Date: 12-2006
Optical and Membrane Modelling in a MEMS Hyperspectral Imaging System
Publisher: IEEE
Date: 2002
HgCdTe photovoltaic detectors fabricated using a new junction formation technology
Publisher: Elsevier BV
Date: 07-2000
MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates
Publisher: Springer Science and Business Media LLC
Date: 18-06-2015
Variable mems-based inductors fabricated from PECVD silicon nitride
Publisher: IEEE
Date: 2002
Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material
Publisher: SPIE
Date: 05-05-2006
DOI: 10.1117/12.664872
Oxidation of PECVD SiNx thin films
Publisher: Elsevier BV
Date: 06-2007
Dark currents in long wavelength infrared HgCdTe gated photodiodes
Publisher: Springer Science and Business Media LLC
Date: 06-2004
Crystallization and compositional changes in amorphous PECVD SiNx thin films - art. no. 64230C
Publisher: SPIE
Date: 18-07-2007
DOI: 10.1117/12.779215
A versatile instrumentation system for MEMS-based device optical characterization
Publisher: SPIE
Date: 07-12-2013
DOI: 10.1117/12.2034955
Hydrogenation of ZnS passivation for HgCdTe
Publisher: IEEE
Date: 2000
Nanoindentation of HgCdTe prepared by molecular beam epitaxy
Publisher: AIP Publishing
Date: 12-12-2005
DOI: 10.1063/1.2143411
Abstract: Nanoindentation has been used to investigate the elastoplastic behavior of Hg0.7Cd0.3Te prepared by molecular beam epitaxy. It was found that Hg0.7Cd0.3Te had a modulus of elasticity of ∼50GPa and hardness of ∼0.66GPa. The HgCdTe response to nanoindentation was found to be purely elastic for low loads and developed into ∼10% elastic and ∼90% plastic response for higher-load indentation exhibiting significant amounts of creep. The onset of plasticity has been observed to be marked by discontinuities or “pop-in” events in the indenter load-penetration curves at sheer stresses of ∼1.8GPa, and has been correlated with the homogeneous nucleation and propagation of dislocations.
Modelling output admittance frequency dispersion in AlGaN/GaN MODFETs
Publisher: IEEE
Date: 2000
A Bistable MOSFET-Type Metal-Tunnel Insulator-Semiconductor Switch
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-1981
Chemical resistance of porous silicon: photolithographic applications
Publisher: Wiley
Date: 02-12-2010
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
Publisher: AIP Publishing
Date: 15-04-2000
DOI: 10.1063/1.372432
Abstract: In order to characterize the electron transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN modulation-doped field-effect transistors, channel magnetoresistance has been measured in the magnetic field range of 0–12 T, the temperature range of 25–300 K, and gate bias range of +0.5 to −2.0 V. By assuming that the 2DEG provides the dominant contribution to the total conductivity, a one-carrier fitting procedure has been applied to extract the electron mobility and carrier sheet density at each particular value of temperature and gate bias. Consequently, the electron mobility versus 2DEG sheet density has been obtained for each measurement temperature. Theoretical analysis of these results suggests that for 2DEG densities below 7×1012 cm−2, the electron mobility in these devices is limited by interface charge, whereas for densities above this level, electron mobility is dominated by scattering associated with the AlGaN/GaN interface roughness.
Effect of CdS Processing Conditions on the Properties of CdS/Si Diodes and CdS/CdTe Thin-Film Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2015
Resonant cavity enhanced HgCdTe detectors
Publisher: IEEE
Date: 2005
SWIR hyperspectral detection with integrated HgCdTe detector and tunable MEMS filter
Publisher: SPIE
Date: 31-08-2006
DOI: 10.1117/12.685469
A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter
Publisher: Springer Science and Business Media LLC
Date: 06-2005
Laser beam induced current for qualitative evaluation of HgCdTe van der Pauw sample uniformity
Publisher: IEEE
Date: 07-2008
Control of chemical composition of rare-earth substituted iron garnets using biased target deposition
Publisher: IEEE
Date: 12-2012
Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell
Publisher: Springer Science and Business Media LLC
Date: 02-03-2012
HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology
Publisher: Springer Science and Business Media LLC
Date: 07-2003
Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers
Publisher: AIP Publishing
Date: 15-04-1998
DOI: 10.1063/1.367187
Abstract: We theoretically show the feasibility of optically and electrically pumped Hg-based vertical-cavity surface-emitting lasers (VCSELs) that emit at midwave-infrared wavelengths up to thermoelectric cooler temperatures. The maximum operating temperature is significantly enhanced by employing a multiple quantum-well active region with very thin (20–30 Å) HgTe wells engineered to yield a strong suppression of both Auger recombination and intervalence free-carrier absorption. Hg0.65Cd0.35Te/Hg0.1Cd0.9Te distributed Bragg reflectors are employed for one or both of the mirrors defining the optical cavity. Detailed numerical simulations of VCSELs emitting at λ≈4.3 μm predict that for optical pumping at 1.06 μm, a maximum operating temperature of 220 K should be achievable for pulsed operation and 160 K in cw mode, with a cw power output of up to 2.6 mW per array element at 100 K. Injection VCSELs are predicted to operate up to 200 K for pulsed operation and 105 K for quasi-cw with a 10% duty cycle.
A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions
Publisher: IOP Publishing
Date: 10-1998
Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2007
Various annealing methods for activation of arsenic in molecular beam epitaxy grown HgCdTe
Publisher: IEEE
Date: 07-2008
Accurate determination of composition profiles in abrupt MBE grown HgCdTe heterostructures
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.522840
Chemical structure of low-temperature plasma deposited silicon nitride thin films
Publisher: SPIE
Date: 02-04-2004
DOI: 10.1117/12.523243
Optical read-out scheme based on grated waveguide cantilever cavity resonance for interrogation of cantilever sensor arrays
Publisher: IEEE
Date: 12-2012
Tailoring anchor shape during release of MEMS microbeams using microfluidic flow
Publisher: IEEE
Date: 12-2012
Near band-edge field-dependent absorption coefficient and refractive index determined by photocurrent and transmittance measurements
Publisher: Optica Publishing Group
Date: 20-08-1999
DOI: 10.1364/AO.38.005127
Abstract: A technique is proposed for the extraction of precise values of field-dependent absorption coefficient alpha and refractive index n from photocurrent and transmittance measurements of optical modulator structures. The technique uses approximate results of alpha and n extracted from a simplified device as the initial input into an iterative procedure that utilizes the consistency between alpha and n to obtain successively better estimates of these parameters. The technique was applied to results that were measured experimentally, and we verified the accuracy by using synthetic data. Errors caused by measurement inaccuracy are also investigated. It is shown that the absorption coefficient has a modest sensitivity whereas the refractive index is insensitive to these errors.
Dependence of ohmic contact quality on Au-Ge alloy-thickness for n-type GaAs
Publisher: Informa UK Limited
Date: 11-1984
Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy
Publisher: AIP Publishing
Date: 25-02-2008
DOI: 10.1063/1.2888967
Abstract: Arsenic incorporation in HgTe∕Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
Publisher: Elsevier BV
Date: 11-2006
Analysis of Crosstalk in HgCdTe p-on-n Heterojunction Photovoltaic Infrared Sensing Arrays
Publisher: Springer Science and Business Media LLC
Date: 06-1999
P-to-n type-conversion mechanisms for HgCdTe Exposed to H2 /CH4 plasmas
Publisher: Springer Science and Business Media LLC
Date: 06-2001
DOI: 10.1007/BF02665869
Cross-flow microfiltration for lab-on-chip defatting of human breast milk
Publisher: SPIE
Date: 26-12-2009
DOI: 10.1117/12.810584
AuGeNi migration affected by operating conditions of GaAs FETs
Publisher: Elsevier BV
Date: 05-1984
Stress relaxation mechanisms in mismatched epitaxial growth of HgCdTe
Publisher: IEEE
Date: 2000
Laser beam induced current as a tool for HgCdTe photodiode characterisation
Publisher: Elsevier BV
Date: 07-2000
Demonstration of a method for detecting MEMS suspended beam height
Publisher: IEEE
Date: 08-2012
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 11-07-2013
Nano-indentation characterisation of PECVD silicon nitride films
Publisher: IEEE
Date: 2000
Refractive index engineering for a distributed bragg reflector for a resonant cavity enhanced detector
Publisher: SPIE
Date: 25-03-2004
DOI: 10.1117/12.522830
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