Website
http://dataportal.arc.gov.au/NCGP/API/grants/DP0452487
Funding Status
Closed
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Funded Activity Summary
Infrared optoelectronic sensors based on p-type molecular beam epitaxy grown HgCdTe. The ability of infrared detectors to directly sense the thermal output of an object has applications in medicine, search and rescue, bushfire detection and in the defence and surveillance industries. The highest performing infrared detectors are photon detectors based molecular beam epitaxy (MBE) grown HgCdTe. The primary aims of this project relate to the fundamental understanding of p-type doping in MBE grown HgCdTe, a current and major difficulty in HgCdTe technology, and the use of such p-type MBE grown layers in conjunction with a newly developed plasma process based n-p junction formation technology to realise novel and innovative infrared detector structures. Such structures would have the ability to revolutionise the use of HgCdTe in infrared detectors and focal plane array applications.Funded Activity Details
Start Date: 2004
End Date: 12-2006
Funding Scheme: Discovery Projects
Funding Amount: $350,000.00
Funder: Australian Research Council
Research Topics
ANZSRC Field of Research (FoR)
Communications Technologies | Integrated Circuits | Condensed Matter Physics—Electronic And Magnetic Properties; | Optical And Photonic Systems
