ORCID Profile
0000-0001-6412-1096
Current Organisation
University of New South Wales
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Electrical and Electronic Engineering | Compound Semiconductors | Microelectronics and Integrated Circuits | Microelectromechanical Systems (MEMS)
ANZSRC Socio-Economic Objective (SEO)
Industrial Instruments | Integrated Circuits and Devices | Integrated Systems |
Related Links
Publications
The Synthesis and Catalytic Activity of New Mixed NHC-Phosphite Nickel(0) Complexes
Publisher: American Chemical Society (ACS)
Date: 27-12-2020
A Robust Weak Taylor Approximation Scheme for Solutions of Jump-Diffusion Stochastic Delay Differential Equations
Publisher: Hindawi Limited
Date: 2013
DOI: 10.1155/2013/750147
Abstract: Stochastic delay differential equations with jumps have a wide range of applications, particularly, in mathematical finance. Solution of the underlying initial value problems is important for the understanding and control of many phenomena and systems in the real world. In this paper, we construct a robust Taylor approximation scheme and then examine the convergence of the method in a weak sense. A convergence theorem for the scheme is established and proved. Our analysis and numerical ex les show that the proposed scheme of high order is effective and efficient for Monte Carlo simulations for jump-diffusion stochastic delay differential equations.
Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films
Publisher: Wiley
Date: 17-12-2012
DOI: 10.1002/PIP.2320
18.7% Efficient inline-diffused screen-printed silicon wafer solar cells with deep homogeneous emitter etch-back
Publisher: Elsevier BV
Date: 10-2013
Novel selective emitter process using non-acidic etch-back for inline-diffused silicon wafer solar cells
Publisher: Elsevier BV
Date: 06-2014
Industrial Silicon Wafer Solar Cells – Status and Trends
Publisher: Walter de Gruyter GmbH
Date: 20-01-2012
Abstract: Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower $/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology.
Lightly Doped Emitters for High Efficiency Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2013
High temperature processing of TiO2 thin films for application in silicon solar cells
Publisher: American Vacuum Society
Date: 12-02-2004
DOI: 10.1116/1.1647594
Abstract: Low temperature deposited coatings have the potential to reduce the production costs of silicon (Si) photovoltaic devices, such as the buried-contact (BC) solar cell. This work investigates the potential of titanium dioxide (TiO2) films to replace silicon dioxide (SiO2) or nitride coatings currently implemented in the BC fabrication sequence, which requires films to be stable at temperatures up to 1000 °C in a variety of gas atmospheres. The authors demonstrate that: (i) TiO2 films do not reduce the bulk minority carrier lifetime of the silicon wafer after lengthy high temperature processing, however chemical reduction of the TiO2 film can occur if s les are not loaded in an oxygen-containing ambient (ii) a thin SiO2 passivation layer can be formed at the TiO2:Si interface by performing a brief oxidation after TiO2 film deposition (iii) while TiO2 coatings function as a phosphorus diffusion barrier, reactions between TiO2 and the phosphorus source result in irreversible damage to the TiO2 film (iv) phosphorus-doped TiO2 films can act as an n-type dopant source, however further reactions with phosphorus limit the usefulness of the film. Thus, TiO2 films are compatible with the high temperature processing required for BC solar cells, but not with any phosphorus diffusion steps.
Optimisation of Screen-Printed Metallisation for Industrial High-Efficiency Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2013
Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition
Publisher: Springer Science and Business Media LLC
Date: 11-12-2007
A multivariate approach to utilizing mid-sequence process control data
Publisher: IEEE
Date: 06-2015
Migration of the aluminium enhanced crystal growth process from quartz to glass using EBEP-CVD
Publisher: IEEE
Date: 2000
19% Efficient Inline-diffused Large-area Screen-printed Al-LBSF Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
“Through-the-glass”, double-sided laser crystallisation using copper vapour lasers for the production of thin film silicon material
Publisher: Elsevier BV
Date: 2001
Excellent Passivation of p+ Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiOx/AlOx Stacks
Publisher: IOP Publishing
Date: 10-2012
Abstract: Excellent surface passivation of boron emitters is demonstrated for industrial plasma-enhanced chemical vapor deposited (PECVD) SiO x /AlO x stacks. Emitter saturation current densities of 39 and 34 fA/cm 2 , respectively, were achieved at 300 K on 80 Ω/sq boron emitters after activation by (i) a standard industrial firing process and (ii) a forming gas anneal followed by industrial firing. We find that the surface passivation by SiO x /AlO x stack can be effectively controlled by varying the SiO x layer thickness. This stack is directly applicable to certain high-efficiency solar cell structures, by optimising the SiO x thickness accordingly.
Electrical and Microstructural Analysis of Contact Formation on Lightly Doped Phosphorus Emitters Using Thick-Film Ag Screen Printing Pastes
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
Photovoltaic technologies
Publisher: Elsevier BV
Date: 12-2008
Surface passivation by silicon nitride in Laser Grooved Buried Contact (LGBC) silicon solar cells
Publisher: Elsevier BV
Date: 04-2009
Resonance-Based Detection of Magnetic Nanoparticles and Microbeads Using Nanopatterned Ferromagnets
Publisher: American Physical Society (APS)
Date: 05-10-2016
Single-Component Damage-Etch Process for Improved Texturization of Monocrystalline Silicon Wafer Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2013
Novel non-metallic non-acidic approach to generate sub-wavelength surface structures for inline-diffused multicrystalline silicon wafer solar cells
Publisher: Elsevier BV
Date: 07-2014
Pilot Line Processing of Silicon Wafer Solar Cells using Industry-scale Equipment
Publisher: Elsevier BV
Date: 2012
High-temperature growth of thin film microcrystalline silicon on silicon carbide using EBEP-CVD
Publisher: Elsevier BV
Date: 10-2002
tert-Butyldimethylsilyl Amine (TBDMS-NH2): A Mild and Green Reagent for the Protection of Benzyl Alcohols, Phenols, and Carboxylic Acids under Solvent-Free Conditions
Publisher: CSIRO Publishing
Date: 2016
DOI: 10.1071/CH16097
Abstract: Herein, we present the use of the tert-butyldimethylsilyl amine (TBDMS-NH2) as a silylating reagent for phenols, benzyl alcohols, and carboxylic acids. Unlike other silyl protection reactions, this reported process with TBDMS-NH2 does not involve the formation of HCl. Importantly, we report the efficacy of this reagent in operating under solvent-free conditions and enabling short reaction times.
Liquid silicate additive for alkaline texturing of mono-Si wafers to improve process bath lifetime and reduce IPA consumption
Publisher: Elsevier BV
Date: 06-2013
Related Organisations
Loughborough University School Of Electronic Electrical And Systems Engineering
Location: United Kingdom of Great Britain and Northern Ireland
Related Funding Activities
SUPERGEN - PV Materials For The 21st Century
Start Date: 2004
End Date: 2008
Funder: Engineering and Physical Sciences Research Council
View Funded ActivityLow Cost Surface Passivation Of Silicon Solar Cells By HiTUS Deposition Of Thin Film Silicon Nitride
Start Date: 2003
End Date: 2006
Funder: Engineering and Physical Sciences Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE210100126
Start Date: 07-2021
End Date: 07-2022
Amount: $527,638.00
Funder: Australian Research Council
View Funded Activity