ORCID Profile
0000-0002-2169-0763
Current Organisation
University of Western Australia
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Photodetectors, Optical Sensors and Solar Cells | Electrical and Electronic Engineering | Compound Semiconductors | Microelectronics and Integrated Circuits | Materials Engineering | Materials Engineering not elsewhere classified | Nanoscale Characterisation | Manufacturing Processes and Technologies (excl. Textiles) | Microelectromechanical Systems (MEMS) | Metals and Alloy Materials | Engineering Instrumentation | Photonic and electro-optical devices sensors and systems (excl. communications) | Electronics sensors and digital hardware | Electronic device and system performance evaluation testing and simulation | Nanoelectronics
ANZSRC Socio-Economic Objective (SEO)
Emerging Defence Technologies | Expanding Knowledge in Engineering | Integrated Circuits and Devices | Expanding Knowledge in Technology | National Security | Industrial Instruments | Energy Transformation not elsewhere classified | Renewable Energy not elsewhere classified | Instrumentation not elsewhere classified | Expanding Knowledge in the Physical Sciences | Scientific Instruments | Integrated Systems |
Related Links
Publications
Characterisation of Multiple Carrier Transport in Indium Nitride grown by Molecular Beam Epitaxy
Publisher: IOP Publishing
Date: 13-10-2006
Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe
Publisher: IEEE
Date: 12-2012
Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs
Publisher: Wiley
Date: 14-02-2020
Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes
Publisher: AIP Publishing
Date: 03-2007
DOI: 10.1063/1.2435972
Abstract: The effect of isochronal thermal annealing on Ni∕n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level transient spectroscopy (DLTS) has been employed to monitor the evolution and annihilation of radiation-induced defects during thermal annealing. Annealing temperatures up 160 °C were found to improve device I-V characteristics however, thermal annealing above 250 °C resulted in: (a) Degradation of both forward and reverse I-V characteristics, (b) reduction in free carrier concentration, and (c) a decrease in the concentration of radiation-induced defects, as evidenced by DLTS measurements. Following annealing above 350 °C, the radiation-induced defects were no longer detectable using DLTS. Analysis of the thermally induced reduction in radiation-induced defect concentration indicated that the dominant defect-annihilation process has a mean activation energy of 1.8 eV. The physical origin of radiation-induced defects, and of defects involved in their annihilation process, is discussed in the perspective of published theoretical calculations of native defect diffusion mechanisms in GaN.
Superlattice Barrier HgCdTe nBn Infrared Photodetectors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2016
Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Publisher: Wiley
Date: 22-05-2007
Charge trapping centres in γ-irradiated Gallium Nitride grown by MOCVD
Publisher: IEEE
Date: 2000
Two-dimensional electron gas transport anisotropy in n-polar GaN/AlGaN heterostructures
Publisher: AIP Publishing
Date: 30-05-2011
DOI: 10.1063/1.3595341
Abstract: Magnetic-field dependent Hall-effect measurements and mobility spectrum analysis were employed to study anisotropic transport in N-polar GaN/Al0.3Ga0.7N heterostructures grown on vicinal sapphire substrates. The significant anisotropy in the mobility in the parallel and perpendicular directions to the miscut direction was accompanied by a slight anisotropy in charge density. A single electron species was found in the direction parallel to the steps resulting from growth on the vicinal substrates while in the perpendicular direction two distinct electrons peaks were evident at T≤150 K. The lower average mobility in the perpendicular direction is attributed to interface roughness scattering.
Effect of MBE Growth Conditions on Multiple Electron Transport in InN
Publisher: Springer Science and Business Media LLC
Date: 27-11-2008
Characterization and Modeling of Photostriction in Silicon Cantilevers Fabricated on Silicon-on-Insulator Substrates
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2015
Intrinsic broadening of the mobility spectrum of bulk n-type GaAs
Publisher: IOP Publishing
Date: 14-11-2014
Magnetoresistance characterisation of 4H-SiC MOSFETs
Publisher: IEEE
Date: 12-2012
Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe
Publisher: Springer Science and Business Media LLC
Date: 09-08-2018
Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approach
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2018
Co-60 gamma-irradiation induced defects in MOCVD n-GaN
Publisher: SPIE
Date: 19-11-2001
DOI: 10.1117/12.448853
Substrate heating effects on properties of CdS thin films prepared by thermal evaporation for photovoltaic applications
Publisher: IEEE
Date: 06-2015
60Co Gamma Irradiation Effects on n-GaN Schottky Diodes
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2003
Multiple carrier transport in N-face indium nitride
Publisher: Wiley
Date: 28-04-2008
Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable SiNx Passivation Stress
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2011
Phonon limited transport in grapheme nanoribbon field effect transistors using full three dimensional quantum mechanical simulation
Publisher: AIP Publishing
Date: 11-2012
DOI: 10.1063/1.4764318
Abstract: This paper present a study of carrier transport in graphene nanoribbon (GNR) transistors using three-dimensional quantum mechanical simulations based on a real-space approach of the non-equilibrium Green's function formalism in the ballistic and dissipative limit. The carrier transport parameters are determined in the presence of electron-phonon scattering, and its influence on carrier mobility including both optical phonons (OPs) and acoustic phonons (APs). The performances of GNR field effect transistors (GNRFETs) are investigated in detail considering the third nearest neighbour tight-binding approximation. The low-field mobility is extracted in the presence of AP and OP as a function of nanoribbon width and length, from which the diffusive/ballistic limit of operation in GNRFETs is determined.
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs
Publisher: IEEE
Date: 09-2014
Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications
Publisher: SPIE
Date: 13-05-2011
DOI: 10.1117/12.883755
Electronic Transport in InAsSb-Based nBn Photodetector Structures
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2013
Design of Band Engineered HgCdTe nBn Detectors for MWIR and LWIR Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2015
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures
Publisher: Elsevier BV
Date: 07-2000
High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs
Publisher: Elsevier BV
Date: 11-2015
Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2018
Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5
Publisher: Springer Science and Business Media LLC
Date: 13-04-2016
Performance Modelling of Bandgap Engineered HgCdTe-Based nBn Infrared Detector
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Magnetoresistance characteristics of gamma-irradiated Al 0.35Ga0.65N/GaN HFETs
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.527255
Vertical transport in InAs/GaSb type-II superlattices
Publisher: IEEE
Date: 12-2012
Investigation of crystallized germanium thin films and germanium/silicon heterojunction devices for optoelectronic applications
Publisher: Elsevier BV
Date: 02-2015
Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2015
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
Publisher: Elsevier BV
Date: 02-2011
Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures
Publisher: IEEE
Date: 12-2010
Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces
Publisher: Elsevier BV
Date: 11-2015
Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates
Publisher: IEEE
Date: 12-2010
Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs
Publisher: Wiley
Date: 11-04-2005
Optical quenching of photoconductivity in undoped n-GaN
Publisher: AIP Publishing
Date: 20-01-2004
DOI: 10.1063/1.1635977
Abstract: The optical quenching of photoconductivity in undoped n-type GaN has been investigated. It was observed that for increasing 360 nm background intensity, at constant 632 nm quenching illumination intensity, the quenching increased for intensities up to 1012 photons cm−2 s−1 and decreased thereafter. At low background illumination intensities, the transient in photoconductivity induced by the quenching illumination exhibits a sharp rise followed by a slow decay removal of the quenching illumination was also noted to induce a sharp photocurrent drop followed by a slow recovery to the photocurrent level induced by the background illumination alone. The quenching effect at constant background and quenching illumination wavelength and intensity is noted to keep nearly constant at low temperature and decrease rapidly when temperature is higher than 270 K. Furthermore, measurement of the spectral distribution of the quenching effect indicates the existence of a broadband hole trap centered around 1.5 eV above the valence band. To explain the observed experimental behavior, the conventional hole trap and recombination center model was extended to include an electron trap. This extended model was found to accurately predict the experimental results.
60Co gamma-irradiation-induced defects in n-GaN
Publisher: AIP Publishing
Date: 31-05-2002
DOI: 10.1063/1.1483390
Abstract: Transient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of these defects manifest significant broadening, their parameters are consistent with reported electron-irradiation-induced nitrogen-vacancy related centers. Three deep-level defects present before irradiation exposure with activation energies of 265, 355, and 581 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).
High Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials
Publisher: Springer Science and Business Media LLC
Date: 29-02-2012
Feasibility study if electron transfer quantum well infrared photodetectors for spectral tuning in the long-wave infrared band
Publisher: AIP Publishing
Date: 18-11-2013
DOI: 10.1063/1.4829698
Abstract: An electron transfer quantum well infrared photodetector (QWIP) consisting of repeating units of two coupled quantum wells (QWs) is capable of exhibiting a two color voltage dependent spectral response. However, significant electron transfer between the coupled QWs is required for spectral tuning, which may require the application of relatively high electric fields. Also, the band structure of coupled quantum wells is more complicated in comparison to a regular quantum well and, therefore, it is not always obvious if an electron transfer QWIP can be designed such that it meets specific performance characteristics. This paper presents a feasibility study of the electron transfer QWIP and its suitability for spectral tuning. Self consistent calculations have been performed of the bandstructure and the electric field that results from electron population within the quantum wells, from which the optical characteristics have been obtained. The band structure, spectral response, and the resonant final state energy locations have been compared with standard QWIPs. It is shown that spectral tuning in the long-wave infrared band can be achieved over a wide wavelength range of several microns while maintaining a relatively narrow spectral response FWHM. However, the total absorption strength is more limited in comparison to a standard QWIP, since the higher QW doping densities require much higher electric fields for electron transfer.
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
Publisher: AIP Publishing
Date: 05-07-2010
DOI: 10.1063/1.3462323
Abstract: We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as a function of ionic concentration, regardless of whether the pH was acidic, basic, or neutral. An increase in resistance corresponds to accumulation of negative ions at the AlGaN surface, indicating device selectivity toward the negative ions. We attribute this to the formation of a double layer at the liquid/semiconductor interface.
Self consistent carrier transport in band engineered HgCdTe nBn detector
Publisher: IEEE
Date: 07-2016
Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors
Publisher: Springer Science and Business Media LLC
Date: 20-07-2007
Random dopant fluctuations and statistical variability in n-channel junctionless FETs
Publisher: IOP Publishing
Date: 12-12-2017
Abstract: The influence of random dopant fluctuations on the statistical variability of the electrical characteristics of n-channel silicon junctionless nanowire transistor (JNT) has been studied using three dimensional quantum simulations based on the non-equilibrium Green's function (NEGF) formalism. Average randomly distributed body doping densities of 2 × 10
Intrinsic broadening of the mobility spectrum of bulk n-type GaAs
Publisher: IEEE
Date: 12-2014
Photostriction actuation of silicon-germanium bilayer cantilevers
Publisher: AIP Publishing
Date: 26-03-2019
DOI: 10.1063/1.5075525
Abstract: This work presents a study of photostriction-based optical actuation in bilayer cantilevers made of silicon and germanium thin-films and follows previous work in this area on silicon cantilevers. This experimental and theoretical study examines the role of the silicon-germanium heterojunction in optical actuation. It is shown that the germanium layer dominates the mechanical response of the device, which can be exploited to achieve enhanced optical actuation in cantilevers.
Towards a magnetoresistance characterization methodology for 1D nanostructured transistors
Publisher: IEEE
Date: 03-2018
Electrical type conversion of p-type HgCdTe induced by nanoimprinting
Publisher: AIP Publishing
Date: 05-2011
DOI: 10.1063/1.3582062
Abstract: A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 μm to 50 μm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates
Publisher: Elsevier BV
Date: 07-2011
Correction to “Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors” [Oct 18 4340-4345]
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2019
Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors
Publisher: Elsevier BV
Date: 02-2011
Dynamic Pressure/Temperature Behaviour of GaN-Based Chemical Sensors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2021
Atomistic modelling of p-channel junctionless silicon nanowire transistor: k.p approach
Publisher: IEEE
Date: 02-2014
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
Publisher: Elsevier BV
Date: 05-2013
Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces
Publisher: Elsevier BV
Date: 09-2013
Nanoimprint induced electrical type conversion in HgCdTe
Publisher: IEEE
Date: 12-2010
A method of removing the valence band discontinuity in HgCdTe-based nBn detectors
Publisher: AIP Publishing
Date: 22-09-2014
DOI: 10.1063/1.4896577
Abstract: A method is described where the valence band discontinuity in HgCdTe-based nBn detectors will be eliminated. The method relies on doping modulation technique, where grading the material composition and doping concentration of the barrier layer at the same time will lead to elimination of the valence band discontinuity in HgCdTe-based nBn detectors. The method is not limited to the nBn structure and can be applied to any barrier detector structure with xBx (with x = n, p) to eliminate the energy band discontinuity in the valence band or conduction band.
Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs
Publisher: IEEE
Date: 12-2014
Description of ionophore-doped membranes with a blocked interface
Publisher: Elsevier BV
Date: 10-2017
Investigation of Multicarrier Transport in LPE-Grown Hg1-xCdxTe Layers
Publisher: Springer Science and Business Media LLC
Date: 11-02-2010
Analysis of geometrical magnetoresistance Al/sub 0.35/Ga/sub 0.65/N/GaN MODFETs
Publisher: IEEE
Date: 2002
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
Publisher: AIP Publishing
Date: 04-05-2020
DOI: 10.1063/1.5144079
Abstract: Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities litudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
MBE growth of high quality HgCdSe on GaSb substrates
Publisher: Elsevier BV
Date: 08-2018
Deposition heating effect on CdS thin films prepared by thermal evaporation for CdTe solar cells
Publisher: IEEE
Date: 12-2014
Charging mechanism of AlGaN/GaN open-gate pH sensor and electrolyte interface
Publisher: IEEE
Date: 12-2014
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
Publisher: Springer Science and Business Media LLC
Date: 15-11-2008
Thermal broadening of two-dimensional electron gas mobility distribution in AlGaN/AlN/GaN heterostructures
Publisher: IEEE
Date: 09-2010
GaN vertical n-p junctions prepared by Si ion implantation
Publisher: Wiley
Date: 05-2018
Modelling output admittance frequency dispersion in AlGaN/GaN MODFETs
Publisher: IEEE
Date: 2000
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapour Deposition
Publisher: Springer Science and Business Media LLC
Date: 25-10-2008
Effect of CdS Processing Conditions on the Properties of CdS/Si Diodes and CdS/CdTe Thin-Film Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2015
A novel technique for degenerate p-type doping of germanium
Publisher: Elsevier BV
Date: 11-2013
Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10nm devices
Publisher: AIP Publishing
Date: 27-08-2014
DOI: 10.1063/1.4894152
Abstract: Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.
Investigations of ohmic contacts to reactive-ion-etched p-type GaN
Publisher: SPIE
Date: 02-04-2004
DOI: 10.1117/12.523252
Effect of FIB milling on MEMS SOI Cantilevers
Publisher: IEEE
Date: 12-2012
Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell
Publisher: Springer Science and Business Media LLC
Date: 02-03-2012
Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2008
Recent progress in MBE grown HgCdTe materials and devices at UWA
Publisher: SPIE
Date: 20-05-2016
DOI: 10.1117/12.2222997
GaSb-based II-VI Semiconductors for Application in Next Generation Infrared Detectors
Publisher: IEEE
Date: 08-2018
Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
Publisher: Wiley
Date: 06-2007
Theoretical study of the influence of surface effects on GaN-based chemical sensors
Publisher: Elsevier BV
Date: 09-2018
Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors
Publisher: Springer Science and Business Media LLC
Date: 02-12-2014
Heavy and light hole transport in nominally undoped GaSb substrates
Publisher: AIP Publishing
Date: 19-01-2015
DOI: 10.1063/1.4906489
Abstract: In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.
Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors
Publisher: Elsevier BV
Date: 09-2018
Characterisation of electron transport in MBE grown indium nitride
Publisher: IEEE
Date: 12-2006
Recent Developments in Mercury Cadmium Telluride IR Detector Technology
Publisher: The Electrochemical Society
Date: 16-09-2015
Abstract: In spite of many attempts to find better material for infrared detectors, HgCdTe still dominates the high performance end of the market. At present, the research in this field is directed towards high pixel density, high yield, reduced cooling and hyperspectral operation. Long lasting issue of availability of high quality, large area substrates for epitaxial growth of HgCdTe seems to be easing recently with development of 4” CdZnTe lattice matching substrates reported recently. The quality of HgCdTe grown on alternative substrates like silicon, GaAs or recently investigated GaSb still falls behind that achievable on CdZnTe due to large lattice mismatch leading to high defect density. Recent effort to scale down the pixel size and pitch resulted in development of diffraction limited high definition focal plane arrays. Implementation of unipolar n-type/barrier/n-type detector structure in HgCdTe material system has been recently proposed and studied intensively. Due to superior transport and optical properties of HgCdTe it is expected that, when optimized, these structures will allow for background limited performance at significantly higher operating temperatures.
Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
Publisher: AIP Publishing
Date: 17-12-2012
DOI: 10.1063/1.4772954
Abstract: Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II superlattices for long wavelength infrared (LWIR) detection have been extracted from magnetic field dependent geometrical magneto-resistance. The measurements, performed at low electric fields and at magnetic field intensities up to 12 T, exhibited multiple-carrier conduction characteristics that required mobility spectrum analysis for the extraction of in idual carrier mobilities and concentrations. Within the common operating temperature range for LWIR photodiodes (80 to 150 K), the conductivity was found to be dominated by three distinct carriers, attributed to majority holes (μ=280±27 cm2/Vs), minority electrons (μ=2,460±75 cm2/Vs), and parasitic sidewall inversion layer electrons (μ=930±55 cm2/Vs). A miniband energy gap of 140 ± 15 meV for the 14/7-monolayer InAs/GaSb superlattice was estimated from the thermal activation of the minority carrier electron density.
MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors
Publisher: Elsevier BV
Date: 06-2017
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures
Publisher: SPIE
Date: 08-10-1999
DOI: 10.1117/12.368457
Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications
Publisher: IEEE
Date: 12-2014
X‐Ray Reciprocal Space Mapping of MBE Grown HgCdTe on Alternative Substrates
Publisher: Wiley
Date: 31-08-2017
Discrete dopant impurity scattering in P-channel silicon nanowire transistors: A k.p approach
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2014
Single crystal and amorphous Ge for use in stand-alone and thin film tandem solar cells
Publisher: IEEE
Date: 12-2012
Correction to: Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe
Publisher: Springer Science and Business Media LLC
Date: 11-09-2018
Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes
Publisher: Elsevier BV
Date: 09-2017
DOI: 10.1016/J.ACA.2017.07.066
Abstract: We demonstrate highly selective and sensitive potentiometric ion sensors for calcium ion detection, operated without the use of a reference electrode. The sensors consist of AlGaN/GaN heterostructure-based transistor devices with chemical functionalisation of the gate area using poly (vinylchloride)-based (PVC) membranes having high selectivity towards calcium ions, Ca
Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
Publisher: Elsevier BV
Date: 02-2008
Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation
Publisher: Springer Science and Business Media LLC
Date: 06-03-2015
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
Publisher: Springer Science and Business Media LLC
Date: 11-07-2013
Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing
Publisher: Elsevier BV
Date: 06-2017
Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures
Publisher: Springer Science and Business Media LLC
Date: 11-04-2015
Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications
Publisher: SPIE
Date: 05-2012
DOI: 10.1117/12.919767
Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development
Publisher: IEEE
Date: 12-2010
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