ORCID Profile
0000-0002-2169-0763
Current Organisation
University of Western Australia
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In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Photodetectors, Optical Sensors and Solar Cells | Electrical and Electronic Engineering | Compound Semiconductors | Microelectronics and Integrated Circuits | Materials Engineering | Materials Engineering not elsewhere classified | Nanoscale Characterisation | Manufacturing Processes and Technologies (excl. Textiles) | Microelectromechanical Systems (MEMS) | Metals and Alloy Materials | Engineering Instrumentation | Photonic and electro-optical devices sensors and systems (excl. communications) | Electronics sensors and digital hardware | Electronic device and system performance evaluation testing and simulation | Nanoelectronics
Emerging Defence Technologies | Expanding Knowledge in Engineering | Integrated Circuits and Devices | Expanding Knowledge in Technology | National Security | Industrial Instruments | Energy Transformation not elsewhere classified | Renewable Energy not elsewhere classified | Instrumentation not elsewhere classified | Expanding Knowledge in the Physical Sciences | Scientific Instruments | Integrated Systems |
Publisher: IOP Publishing
Date: 13-10-2006
Publisher: IEEE
Date: 12-2012
Publisher: Wiley
Date: 14-02-2020
Publisher: AIP Publishing
Date: 03-2007
DOI: 10.1063/1.2435972
Abstract: The effect of isochronal thermal annealing on Ni∕n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level transient spectroscopy (DLTS) has been employed to monitor the evolution and annihilation of radiation-induced defects during thermal annealing. Annealing temperatures up 160 °C were found to improve device I-V characteristics however, thermal annealing above 250 °C resulted in: (a) Degradation of both forward and reverse I-V characteristics, (b) reduction in free carrier concentration, and (c) a decrease in the concentration of radiation-induced defects, as evidenced by DLTS measurements. Following annealing above 350 °C, the radiation-induced defects were no longer detectable using DLTS. Analysis of the thermally induced reduction in radiation-induced defect concentration indicated that the dominant defect-annihilation process has a mean activation energy of 1.8 eV. The physical origin of radiation-induced defects, and of defects involved in their annihilation process, is discussed in the perspective of published theoretical calculations of native defect diffusion mechanisms in GaN.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2016
Publisher: Wiley
Date: 22-05-2007
Publisher: IEEE
Date: 2000
Publisher: AIP Publishing
Date: 30-05-2011
DOI: 10.1063/1.3595341
Abstract: Magnetic-field dependent Hall-effect measurements and mobility spectrum analysis were employed to study anisotropic transport in N-polar GaN/Al0.3Ga0.7N heterostructures grown on vicinal sapphire substrates. The significant anisotropy in the mobility in the parallel and perpendicular directions to the miscut direction was accompanied by a slight anisotropy in charge density. A single electron species was found in the direction parallel to the steps resulting from growth on the vicinal substrates while in the perpendicular direction two distinct electrons peaks were evident at T≤150 K. The lower average mobility in the perpendicular direction is attributed to interface roughness scattering.
Publisher: Springer Science and Business Media LLC
Date: 27-11-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2015
Publisher: IOP Publishing
Date: 14-11-2014
Publisher: IEEE
Date: 12-2012
Publisher: Springer Science and Business Media LLC
Date: 09-08-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2018
Publisher: SPIE
Date: 19-11-2001
DOI: 10.1117/12.448853
Publisher: IEEE
Date: 06-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2003
Publisher: Wiley
Date: 28-04-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2011
Publisher: AIP Publishing
Date: 11-2012
DOI: 10.1063/1.4764318
Abstract: This paper present a study of carrier transport in graphene nanoribbon (GNR) transistors using three-dimensional quantum mechanical simulations based on a real-space approach of the non-equilibrium Green's function formalism in the ballistic and dissipative limit. The carrier transport parameters are determined in the presence of electron-phonon scattering, and its influence on carrier mobility including both optical phonons (OPs) and acoustic phonons (APs). The performances of GNR field effect transistors (GNRFETs) are investigated in detail considering the third nearest neighbour tight-binding approximation. The low-field mobility is extracted in the presence of AP and OP as a function of nanoribbon width and length, from which the diffusive/ballistic limit of operation in GNRFETs is determined.
Publisher: IEEE
Date: 09-2014
Publisher: SPIE
Date: 13-05-2011
DOI: 10.1117/12.883755
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2013
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2015
Publisher: Elsevier BV
Date: 07-2000
Publisher: Elsevier BV
Date: 11-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2018
Publisher: Springer Science and Business Media LLC
Date: 13-04-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.527255
Publisher: IEEE
Date: 12-2012
Publisher: Elsevier BV
Date: 02-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2015
Publisher: Elsevier BV
Date: 02-2011
Publisher: IEEE
Date: 12-2010
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Publisher: Elsevier BV
Date: 11-2015
Publisher: IEEE
Date: 12-2010
Publisher: Wiley
Date: 11-04-2005
Publisher: AIP Publishing
Date: 20-01-2004
DOI: 10.1063/1.1635977
Abstract: The optical quenching of photoconductivity in undoped n-type GaN has been investigated. It was observed that for increasing 360 nm background intensity, at constant 632 nm quenching illumination intensity, the quenching increased for intensities up to 1012 photons cm−2 s−1 and decreased thereafter. At low background illumination intensities, the transient in photoconductivity induced by the quenching illumination exhibits a sharp rise followed by a slow decay removal of the quenching illumination was also noted to induce a sharp photocurrent drop followed by a slow recovery to the photocurrent level induced by the background illumination alone. The quenching effect at constant background and quenching illumination wavelength and intensity is noted to keep nearly constant at low temperature and decrease rapidly when temperature is higher than 270 K. Furthermore, measurement of the spectral distribution of the quenching effect indicates the existence of a broadband hole trap centered around 1.5 eV above the valence band. To explain the observed experimental behavior, the conventional hole trap and recombination center model was extended to include an electron trap. This extended model was found to accurately predict the experimental results.
Publisher: AIP Publishing
Date: 31-05-2002
DOI: 10.1063/1.1483390
Abstract: Transient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of these defects manifest significant broadening, their parameters are consistent with reported electron-irradiation-induced nitrogen-vacancy related centers. Three deep-level defects present before irradiation exposure with activation energies of 265, 355, and 581 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).
Publisher: Springer Science and Business Media LLC
Date: 29-02-2012
Publisher: AIP Publishing
Date: 18-11-2013
DOI: 10.1063/1.4829698
Abstract: An electron transfer quantum well infrared photodetector (QWIP) consisting of repeating units of two coupled quantum wells (QWs) is capable of exhibiting a two color voltage dependent spectral response. However, significant electron transfer between the coupled QWs is required for spectral tuning, which may require the application of relatively high electric fields. Also, the band structure of coupled quantum wells is more complicated in comparison to a regular quantum well and, therefore, it is not always obvious if an electron transfer QWIP can be designed such that it meets specific performance characteristics. This paper presents a feasibility study of the electron transfer QWIP and its suitability for spectral tuning. Self consistent calculations have been performed of the bandstructure and the electric field that results from electron population within the quantum wells, from which the optical characteristics have been obtained. The band structure, spectral response, and the resonant final state energy locations have been compared with standard QWIPs. It is shown that spectral tuning in the long-wave infrared band can be achieved over a wide wavelength range of several microns while maintaining a relatively narrow spectral response FWHM. However, the total absorption strength is more limited in comparison to a standard QWIP, since the higher QW doping densities require much higher electric fields for electron transfer.
Publisher: AIP Publishing
Date: 05-07-2010
DOI: 10.1063/1.3462323
Abstract: We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as a function of ionic concentration, regardless of whether the pH was acidic, basic, or neutral. An increase in resistance corresponds to accumulation of negative ions at the AlGaN surface, indicating device selectivity toward the negative ions. We attribute this to the formation of a double layer at the liquid/semiconductor interface.
Publisher: IEEE
Date: 07-2016
Publisher: Springer Science and Business Media LLC
Date: 20-07-2007
Publisher: IOP Publishing
Date: 12-12-2017
Abstract: The influence of random dopant fluctuations on the statistical variability of the electrical characteristics of n-channel silicon junctionless nanowire transistor (JNT) has been studied using three dimensional quantum simulations based on the non-equilibrium Green's function (NEGF) formalism. Average randomly distributed body doping densities of 2 × 10
Publisher: IEEE
Date: 12-2014
Publisher: AIP Publishing
Date: 26-03-2019
DOI: 10.1063/1.5075525
Abstract: This work presents a study of photostriction-based optical actuation in bilayer cantilevers made of silicon and germanium thin-films and follows previous work in this area on silicon cantilevers. This experimental and theoretical study examines the role of the silicon-germanium heterojunction in optical actuation. It is shown that the germanium layer dominates the mechanical response of the device, which can be exploited to achieve enhanced optical actuation in cantilevers.
Publisher: IEEE
Date: 03-2018
Publisher: AIP Publishing
Date: 05-2011
DOI: 10.1063/1.3582062
Abstract: A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 μm to 50 μm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.
Publisher: Elsevier BV
Date: 07-2011
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2019
Publisher: Elsevier BV
Date: 02-2011
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2021
Publisher: IEEE
Date: 02-2014
Publisher: Elsevier BV
Date: 05-2013
Publisher: Elsevier BV
Date: 09-2013
Publisher: IEEE
Date: 12-2010
Publisher: AIP Publishing
Date: 22-09-2014
DOI: 10.1063/1.4896577
Abstract: A method is described where the valence band discontinuity in HgCdTe-based nBn detectors will be eliminated. The method relies on doping modulation technique, where grading the material composition and doping concentration of the barrier layer at the same time will lead to elimination of the valence band discontinuity in HgCdTe-based nBn detectors. The method is not limited to the nBn structure and can be applied to any barrier detector structure with xBx (with x = n, p) to eliminate the energy band discontinuity in the valence band or conduction band.
Publisher: IEEE
Date: 12-2014
Publisher: Elsevier BV
Date: 10-2017
Publisher: Springer Science and Business Media LLC
Date: 11-02-2010
Publisher: IEEE
Date: 2002
Publisher: AIP Publishing
Date: 04-05-2020
DOI: 10.1063/1.5144079
Abstract: Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities litudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
Publisher: Elsevier BV
Date: 08-2018
Publisher: IEEE
Date: 12-2014
Publisher: IEEE
Date: 12-2014
Publisher: Springer Science and Business Media LLC
Date: 15-11-2008
Publisher: IEEE
Date: 09-2010
Publisher: Wiley
Date: 05-2018
Publisher: IEEE
Date: 2000
Publisher: Springer Science and Business Media LLC
Date: 25-10-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2015
Publisher: Elsevier BV
Date: 11-2013
Publisher: AIP Publishing
Date: 27-08-2014
DOI: 10.1063/1.4894152
Abstract: Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.
Publisher: SPIE
Date: 02-04-2004
DOI: 10.1117/12.523252
Publisher: IEEE
Date: 12-2012
Publisher: Springer Science and Business Media LLC
Date: 02-03-2012
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2008
Publisher: SPIE
Date: 20-05-2016
DOI: 10.1117/12.2222997
Publisher: IEEE
Date: 08-2018
Publisher: Wiley
Date: 06-2007
Publisher: Elsevier BV
Date: 09-2018
Publisher: Springer Science and Business Media LLC
Date: 02-12-2014
Publisher: AIP Publishing
Date: 19-01-2015
DOI: 10.1063/1.4906489
Abstract: In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.
Publisher: Elsevier BV
Date: 09-2018
Publisher: IEEE
Date: 12-2006
Publisher: The Electrochemical Society
Date: 16-09-2015
Abstract: In spite of many attempts to find better material for infrared detectors, HgCdTe still dominates the high performance end of the market. At present, the research in this field is directed towards high pixel density, high yield, reduced cooling and hyperspectral operation. Long lasting issue of availability of high quality, large area substrates for epitaxial growth of HgCdTe seems to be easing recently with development of 4” CdZnTe lattice matching substrates reported recently. The quality of HgCdTe grown on alternative substrates like silicon, GaAs or recently investigated GaSb still falls behind that achievable on CdZnTe due to large lattice mismatch leading to high defect density. Recent effort to scale down the pixel size and pitch resulted in development of diffraction limited high definition focal plane arrays. Implementation of unipolar n-type/barrier/n-type detector structure in HgCdTe material system has been recently proposed and studied intensively. Due to superior transport and optical properties of HgCdTe it is expected that, when optimized, these structures will allow for background limited performance at significantly higher operating temperatures.
Publisher: AIP Publishing
Date: 17-12-2012
DOI: 10.1063/1.4772954
Abstract: Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II superlattices for long wavelength infrared (LWIR) detection have been extracted from magnetic field dependent geometrical magneto-resistance. The measurements, performed at low electric fields and at magnetic field intensities up to 12 T, exhibited multiple-carrier conduction characteristics that required mobility spectrum analysis for the extraction of in idual carrier mobilities and concentrations. Within the common operating temperature range for LWIR photodiodes (80 to 150 K), the conductivity was found to be dominated by three distinct carriers, attributed to majority holes (μ=280±27 cm2/Vs), minority electrons (μ=2,460±75 cm2/Vs), and parasitic sidewall inversion layer electrons (μ=930±55 cm2/Vs). A miniband energy gap of 140 ± 15 meV for the 14/7-monolayer InAs/GaSb superlattice was estimated from the thermal activation of the minority carrier electron density.
Publisher: Elsevier BV
Date: 06-2017
Publisher: SPIE
Date: 08-10-1999
DOI: 10.1117/12.368457
Publisher: IEEE
Date: 12-2014
Publisher: Wiley
Date: 31-08-2017
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2014
Publisher: IEEE
Date: 12-2012
Publisher: Springer Science and Business Media LLC
Date: 11-09-2018
Publisher: Elsevier BV
Date: 09-2017
DOI: 10.1016/J.ACA.2017.07.066
Abstract: We demonstrate highly selective and sensitive potentiometric ion sensors for calcium ion detection, operated without the use of a reference electrode. The sensors consist of AlGaN/GaN heterostructure-based transistor devices with chemical functionalisation of the gate area using poly (vinylchloride)-based (PVC) membranes having high selectivity towards calcium ions, Ca
Publisher: Elsevier BV
Date: 02-2008
Publisher: Springer Science and Business Media LLC
Date: 06-03-2015
Publisher: Springer Science and Business Media LLC
Date: 11-07-2013
Publisher: Elsevier BV
Date: 06-2017
Publisher: Springer Science and Business Media LLC
Date: 11-04-2015
Publisher: SPIE
Date: 05-2012
DOI: 10.1117/12.919767
Publisher: IEEE
Date: 12-2010
Start Date: 04-2017
End Date: 08-2018
Amount: $250,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 04-2020
End Date: 12-2023
Amount: $502,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 04-2018
End Date: 03-2021
Amount: $490,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2023
End Date: 12-2023
Amount: $690,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2017
End Date: 12-2019
Amount: $557,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2012
End Date: 12-2014
Amount: $300,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 07-2021
End Date: 07-2022
Amount: $527,638.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2021
End Date: 04-2022
Amount: $837,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2015
End Date: 12-2017
Amount: $335,100.00
Funder: Australian Research Council
View Funded ActivityStart Date: 01-2012
End Date: 12-2012
Amount: $200,000.00
Funder: Australian Research Council
View Funded Activity