ORCID Profile
0000-0002-2048-217X
Current Organisation
Ruprecht Karls Universität Heidelberg
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Publisher: American Chemical Society (ACS)
Date: 14-04-2022
Publisher: Royal Society of Chemistry (RSC)
Date: 2017
DOI: 10.1039/C7NR04022A
Abstract: Dye modified (7,5) single walled carbon nanotubes (SWCNTs) are integrated into a field effect transistor device in which the built-in electric field at the nanotube/metal contact allows for exciton separation.
Publisher: AIP Publishing
Date: 15-03-2008
DOI: 10.1063/1.2894723
Abstract: The emission characteristics and external quantum efficiencies of ambipolar polymer light-emitting field-effect transistors are investigated as a function of applied voltage, current density, and ratio of hole to electron mobility. Green-emitting poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) with balanced electron and hole mobilities and red-emitting poly((9,9-dioctylfluorene)-2,7- diyl-alt-[4,7-bis(3-hexylthien-5-yl)-2,1,3-benzothiadiazole]-2′,2″-diyl) (F8TBT) with strongly unbalanced hole and electron mobilities as semiconducting and emissive polymers are compared. The current-voltage and light output characteristics of the two types of light-emitting transistors were found to be fundamentally alike independent of mobility ratio. Device modeling allowing for a single (Langevin-type) charge recombination mechanism was able to reproduce the device characteristics for both cases but could not replicate the experimentally observed dependence of external quantum efficiency on current density. The increase of quantum efficiency with current density up to a saturation value could be indicative of a trap-assisted nonradiative decay mechanism at the semiconductor-dielectric interface. Optical output modeling confirmed that the maximum external quantum efficiency of F8BT light-emitting transistors of 0.8% is consistent with complete recombination of all charges and a singlet exciton fraction of 25%.
Publisher: Wiley
Date: 02-08-2016
Publisher: AIP Publishing
Date: 07-05-2007
DOI: 10.1063/1.2738197
Abstract: The authors report efficient photovoltaic diodes which use poly((9,9-dioctylfluorene)-2,7-diyl-alt-[4,7-bis(3-hexylthien-5-yl)-2,1,3-benzothiadiazole]-2′,2″-diyl) (F8TBT) both as electron acceptor, in blends with poly(3-hexylthiophene), and as hole acceptor, in blends with (6,6)-phenyl C61-butyric acid methyl ester. In both cases external quantum efficiencies of over 25% are achieved, with a power conversion efficiency of 1.8% under simulated sunlight for optimized F8TBT oly(3-hexylthiophene) devices. The ambipolar nature of F8TBT is also demonstrated by the operation of light-emitting F8TBT transistors. The equivalent p- and n-type operation in this conjugated polymer represent an important extension of the range of useful n-type materials which may be developed.
Publisher: American Chemical Society (ACS)
Date: 27-03-2017
Publisher: Elsevier BV
Date: 08-2016
Publisher: American Chemical Society (ACS)
Date: 14-04-2021
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for Jana Zaumseil.