ORCID Profile
0000-0002-6140-7221
Current Organisations
Heidelberg University
,
Khalifa University of Science and Technology
,
Fraunhofer Institute for Physical Measurement Techniques
,
Cochin University of Science and Technology
,
Indian Institute of Science
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Publisher: Elsevier BV
Date: 12-2006
Publisher: Springer Science and Business Media LLC
Date: 03-12-2011
Publisher: Springer Science and Business Media LLC
Date: 26-11-2010
Publisher: Wiley
Date: 07-2010
Publisher: Wiley
Date: 21-11-2011
DOI: 10.1002/APP.35364
Publisher: Elsevier BV
Date: 04-2006
Publisher: Wiley
Date: 26-05-2010
DOI: 10.1002/APP.31690
Publisher: AIP Publishing
Date: 19-08-2003
DOI: 10.1063/1.1598628
Abstract: La 0.5 Sr 0.5 Co 1−x Ni x O 3−δ (0⩽ x ⩽0.6) ceramics were prepared using a conventional solid-state ceramic route. The thermal properties—thermal conductivity and heat capacity—of these ceramics were measured by the photopyroelectric technique. The thermal conductivity was found to increase with increasing Ni content. These materials were also found to exhibit a metallic-type variation of thermal conductivity with temperature, and no metal-insulator (M-I) transition was found to occur in any of the s les prepared by this route. However, a M-I transition was found to occur in La0.5Sr0.5CoO3−δ s les prepared by hot pressing. The difference is attributed to variations in oxygen content in the s les.
Publisher: Elsevier BV
Date: 07-2009
Publisher: Wiley
Date: 22-03-2010
DOI: 10.1002/POLB.21988
Publisher: AIP Publishing
Date: 15-08-2005
DOI: 10.1063/1.2007873
Abstract: A temperature stable low loss substrate based on 0.83ZnAl2O4–0.17TiO2 (ZAT) was developed as a substitute to Al2O3 for possible applications in microelectronic industry as substrates and packaging materials. The thermal conductivity of ZAT is 59Wm−1K−1 which is more than twice as that of Al2O3. The thermal-expansion coefficient of this dielectric is 6.3ppm∕°C which is comparable to that of silicon used in microelectronic circuitry. Furthermore, 0.83ZnAl2O4–0.17TiO2 dielectric is chemically inert with silicon, which increases its applicability in microelectronic packages.
Location: United Arab Emirates
Location: Germany
No related grants have been discovered for Jacob Philip.