ORCID Profile
0000-0002-3118-5488
Current Organisations
Shenzhen University
,
Hong Kong University of Science and Technology
Does something not look right? The information on this page has been harvested from data sources that may not be up to date. We continue to work with information providers to improve coverage and quality. To report an issue, use the Feedback Form.
Publisher: Wiley
Date: 24-02-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2014
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2022
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2015
Publisher: AIP Publishing
Date: 05-07-2021
DOI: 10.1063/5.0054612
Abstract: An AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet (UV) photodetector employing lateral Schottky contacts was fabricated and characterized at different temperatures. As the temperature increased from 25 to 250 °C, the photoresponsivity of the MHM photodetector increased 3.5 times. This was attributed to the spontaneous-polarization-induced spatial separation of the photogenerated electrons and holes and the increased optical absorption at higher temperatures. Meanwhile, the decay time constant of the photocurrent became approximately three orders of magnitude smaller. With the enhanced photoresponsivity and the decreased response time constant, kilohertz optical switching of the MHM photodetector was recorded at 250 °C. The AlGaN/GaN MHM photodetector, sharing the same GaN-on-Si electronics platform, provides an applicable candidate for an all-GaN integrated UV sensing and lifying system for high-temperature applications.
Publisher: IEEE
Date: 12-2015
Publisher: IEEE
Date: 05-2015
Publisher: Wiley
Date: 17-02-2016
Abstract: In this work, the Schottky‐on‐heterojunction light‐emitting diodes (SoH‐LED) are monolithically integrated with the AlGaN/GaN high‐electron‐mobility transistors (HEMT) on an AlGaN/GaN‐on‐Si platform commonly used for GaN lateral electronic devices. The on‐chip electro‐optic modulation is realized in a single device fabricated using HEMT‐compatible process. Also, SoH‐LED arrays are fabricated to demonstrate the on‐chip addressable functionality with each SoH‐LED pixel in the array in idually controlled by the integrated HEMT. High‐resolution micro‐scale SoH‐LED seven‐segment displays are demonstrated to show the potential of using SoH‐LEDs as a robust alternative for micro flat‐panel displays. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Publisher: IEEE
Date: 12-2016
Publisher: IEEE
Date: 12-2014
Publisher: AIP Publishing
Date: 04-2020
DOI: 10.1063/5.0005648
Abstract: Solar to fuel energy conversion is one of the momentous topics nowadays considering the urgent demand for clean energy supplies. In this work, the tunable electronic and optical properties of III-nitride/ZnO 2D/2D heterostructures (including GaN/ZnO, AlN/ZnO, and GaN/AlN) by strain engineering were investigated by first-principles calculations. The studied heterostructures feature a small interlayer distance, with the cation of one layer directly above the anion of the other layer, and vice versa. This leads to a strong binding energy and interlayer coupling across the heterostructure. The built-in field induced by the charge redistribution facilitates the photoexcited carrier migration, which is beneficial to the photocatalytic water splitting application. The stable III-nitride/ZnO heterostructures exhibit decent band edge positions with biaxial strain engineering and feature an enhancement of optical absorption under tensile strain. Our results indicate that the III-nitride/ZnO 2D/2D heterostructures are promising photocatalysts for solar to hydrogen generation by water splitting.
Publisher: AIP Publishing
Date: 02-03-2015
DOI: 10.1063/1.4914455
Abstract: In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance Ron and/or threshold voltage Vth of the HEMT. The results show that the recovery processes of both dynamic Ron and threshold voltage Vth of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2017
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
Publisher: American Chemical Society (ACS)
Date: 17-06-2022
Publisher: IOP Publishing
Date: 13-06-2018
Publisher: AIP Publishing
Date: 08-2020
DOI: 10.1063/5.0012685
Abstract: The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap-excited photoluminescence (PL) spectroscopy and first-principles calculations. Oxygen (O) is the only impurity in the AlN-on-W crystal grown by PVT. By analyzing the excitation-power-, excitation-photon-energy-, and temperature-dependence of the PL spectra, the emission peaks of defect complexes involving aluminum vacancy (VAl) and substitutional oxygen (ON) with different spatial and atomic configurations, i.e., VAl–ON and VAl–2ON with ON featuring axial or basal configurations, are identified. It is revealed that two different charging states coexist in thermal equilibrium for each configuration of VAl–ON complexes. The optical transitions between the conduction band and (VAl–ON)2− and/or (VAl–2ON)1− contribute the UV emissions and those between the valence band and (VAl–ON)1− or (VAl–2ON)0 contribute the red emissions.
Publisher: AIP Publishing
Date: 27-07-2020
DOI: 10.1063/5.0011831
Abstract: In this work, the breakdown characteristics and the electroluminescence (EL) spectra of a Schottky-metal -GaN/AlGaN/GaN device under forward bias were investigated at different temperatures. The failure of the metal -GaN junction, which was caused by electron transport in the p-type Schottky junction, was identified as the first step in the device breakdown process. The breakdown voltage increased with higher temperatures. Under a forward bias of 8 V, the intensity of the EL emission increased more than two orders of magnitude, while the current increased by a factor of 4 as the temperature increased from 0 °C to 200 °C. This unambiguously demonstrated thermally enhanced hole injection at the Schottky-metal -GaN interface. We proposed that more electrons were annihilated by the thermally enhanced hole injection, resulting in the positive temperature dependence of the device breakdown.
Publisher: IOP Publishing
Date: 09-04-2018
Publisher: IEEE
Date: 10-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2018
Publisher: IEEE
Date: 06-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2023
Publisher: AIP Publishing
Date: 21-07-2014
DOI: 10.1063/1.4890238
Abstract: We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.
Publisher: IEEE
Date: 12-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 15-12-2016
No related grants have been discovered for Baikui Li.