ORCID Profile
0000-0002-3503-9672
Current Organisation
CSIRO
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Condensed Matter Physics—Electronic And Magnetic Properties; | Nanomanufacturing | Nanotechnology | Macromolecular and Materials Chemistry | Nanotechnology | Chemical Sciences Not Elsewhere Classified | Materials Engineering | Biotechnology Not Elsewhere Classified | Composite Materials | Nanometrology |
Physical sciences | Other | Other | Manufacturing not elsewhere classified | Integrated circuits and devices | Chemical sciences | Expanding Knowledge in Technology
Publisher: IOP Publishing
Date: 06-07-2015
Publisher: Informa UK Limited
Date: 03-1998
DOI: 10.1071/EG998030
Publisher: American Vacuum Society
Date: 07-1987
DOI: 10.1116/1.574558
Abstract: InN is a III–V semiconductor with a wide band gap of 1.89 eV and mobility of 2700 cm2 V−1 s−1 (300 K) which has applications in optoelectronics. As with GaAs, surface oxidation and degradation after aging in air is a problem that must be taken into account during device fabrication. Of the possible techniques, x-ray photoelectron spectroscopy was used as it could detect nitrogen, while the x-ray beam did not preferentially sputter nitrogen as rapidly as other techniques. Various s le preparation techniques and sputter etching with xenon were used to avoid nitrogen depletion as well as to view initial chemisorption of oxygen onto InN surfaces. We found the surface oxidation of InN was clearly dependent on the aging and s le treatment history. The first stage of oxidation is the bonding of oxygen onto nitrogen to form an In–NO complex. After sputter etching or abrasive cleaning, the In–NO complex further oxidized to form an In–NO2 complex. The final oxidation state after aging was found to be dependent on the s le preparation conditions. Finally, the In(3d5/3) Auger parameter plots indicate that the indium is predominantly bonded to nitrogen regardless of the aging and s le treatment. These results correspond closely to studies on GaAs where during the oxidation process, oxygen chemisorbs onto the metalloid.
Publisher: IOP Publishing
Date: 14-10-2013
Publisher: IEEE
Date: 12-2011
Publisher: IEEE
Date: 09-2009
Publisher: IOP Publishing
Date: 26-04-2016
Publisher: Springer Science and Business Media LLC
Date: 23-10-2014
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-1993
DOI: 10.1109/77.233427
Publisher: IOP Publishing
Date: 18-10-2007
Publisher: Springer US
Date: 1994
Publisher: IOP Publishing
Date: 02-06-2008
DOI: 10.1088/0957-4484/19/28/285303
Abstract: A novel procedure combining monolayer self-assembly with electron beam lithography has been developed for attaching ferritin nanoparticles to a submicron thin-film SQUID (superconducting quantum interference device). After opening a window in the PMMA (polymethylmethacrylate) resist, organic linker molecules are used to attach ferritin to the exposed parts of the gold overlayer of a Nb nanoSQUID. This allows the magnetic nanoparticles to be located optimally as far as magnetic coupling to the nanoSQUID is concerned.
Publisher: IOP Publishing
Date: 19-01-2005
Publisher: Elsevier BV
Date: 08-1999
Publisher: AIP Publishing
Date: 05-08-2002
DOI: 10.1063/1.1500780
Abstract: We have experimentally determined the inductance Lsq, transfer function VΦ, and flux noise SΦ of several dc-superconducting quantum interference devices (SQUIDs) of increasing loop size (without an input flux transformer) in open-loop mode. Our primary aim was to provide reliable inductance data to aid in the design of high temperature superconducting magnetometers. Flux was induced by current injection directly into the SQUID loop. The inductances were compared with theoretical values. Correlations between the inductance data and measured values of VΦ and SΦ were obtained. Guidelines for optimization of magnetometer SQUIDs were established the importance of achieving large VΦ together with a relatively small Lsq was demonstrated, and an order-of-magnitude reduction in noise was achieved by subjecting one of the SQUIDs to an in-house “ion-beam trimming” process.
Publisher: IOP Publishing
Date: 14-08-2017
Publisher: AIP Publishing LLC
Date: 2015
DOI: 10.1063/1.4937651
Publisher: IOP Publishing
Date: 19-12-2002
Publisher: AIP
Date: 2009
DOI: 10.1063/1.3137916
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2001
DOI: 10.1109/77.919607
Publisher: Society of Exploration Geophysicists
Date: 2008
DOI: 10.1190/1.2831682
Publisher: Elsevier BV
Date: 08-2003
Publisher: Elsevier BV
Date: 10-1925
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1997
DOI: 10.1109/77.621974
Publisher: IEEE
Date: 09-2016
Publisher: IOP Publishing
Date: 13-01-2010
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4794225
Publisher: IOP Publishing
Date: 21-04-2010
Publisher: Springer Science and Business Media LLC
Date: 02-1988
DOI: 10.1007/BF02395547
Publisher: AIP Publishing
Date: 15-03-2007
DOI: 10.1063/1.2495937
Abstract: An optically transparent and electrically conducting oxide Ta2O epitaxial thin film has been fabricated and characterized. In our experiments, we grew epitaxial Ta films on r-cut sapphire crystal substrates, which were subsequently oxidized into Ta2O films. The x-ray θ-2θ scan peaks match the American Society for Testing and Materials x-ray powder data card for Ta2O (18-1302) with a cubic structure. The x-ray photoelectron spectroscopic measurements indicated Ta 4f peak energy values between those for Ta and TaO whereas the O∕Ta atomic ratio is between 0.5 and 1. Resistivity-temperature measurements showed a metallic behavior with resistivity values in the range of (1.5–3.3)×10−4Ωcm at 293K. Optical measurements on 25–100nm thick films indicated that they are transparent in the range of 400–2000nm and have an energy band gap between 2.04 and 2.17eV. The Hall mobility and carrier density of the films were in the range of 62–110cm2V−1s−1 and (1.9–3.0)×1020cm−3, respectively.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2003
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2011
Publisher: AIP Publishing
Date: 17-06-2004
DOI: 10.1063/1.1766401
Abstract: An axial first-order gradiometer is formed by coupling the input coil of a flexible high-temperature superconducting flux transformer inductively to a directly coupled superconducting quantum interference device magnetometer. The transformer is patterned in a single-layer YBa2Cu3O7−x film on a flexible Hastelloy tape. The tape is bent such that the two outer pickup loops of the transformer are facing each other while perpendicular to the magnetometer plane resulting in a gradiometer baseline of 35mm. A superconducting shield is mechanically adjusted to reduce the gradiometer response to uniform fields applied perpendicularly to both the magnetometer plane and the plane of the transformer pickup loops, by a factor of typically 7000.
Publisher: Informa UK Limited
Date: 12-2004
DOI: 10.1071/EG04297
Publisher: Springer Japan
Date: 1999
Publisher: AIP Publishing
Date: 26-03-2013
DOI: 10.1063/1.4798345
Abstract: We report the performance of twenty-four high temperature superconducting dc superconducting quantum interference devices (SQUIDs) whose Josephson junctions were formed from a YBa2Cu3O7-x (YBCO) grain boundary on an engineered MgO step-edge substrate. Each device has the same SQUID design with an inductance of 65 pH, and consisted of two SQUIDs with different junction widths, connected in series, and directly coupled to a large pick-up loop of 7.5 mm × 8.8 mm on a 1 × 1 cm2 chip. 58% of the devices had a peak-to-peak modulation voltage, ΔV, larger than 30 μV. The typical values of the white flux and field noise were 4.7 μΦo and 56 fT/Hz, respectively, in a magnetically shielded environment with 1/f corner frequency at 15–20 Hz. In an unshielded environment, there was no degradation of white noise.
Publisher: Springer Science and Business Media LLC
Date: 21-11-2021
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2005
Publisher: IOP Publishing
Date: 19-10-2009
Publisher: IOP Publishing
Date: 29-10-2002
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1999
DOI: 10.1109/77.783852
Publisher: Elsevier BV
Date: 02-2002
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1995
DOI: 10.1109/77.403174
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1999
DOI: 10.1109/77.783971
Publisher: Elsevier BV
Date: 03-1990
Publisher: Society of Exploration Geophysicists
Date: 03-2002
DOI: 10.1190/1.1468606
Abstract: Traditionally airborne time-domain electromagnetic (AEM) survey systems use induction coils as the sensor (receiver). We have replaced the induction coil in a transient electromagnetic (TEM) system with a liquid-nitrogen cooled superconducting quantum interference device (SQUID) magnetometer sensor. Using this prototype system, we aimed to improve performance in detecting conductive mineralization, particularly where the conductive mineralization of interest is covered by a conductive regolith. We successfully demonstrated one- and three-component SQUID sensors in airborne TEM surveying, and achieved performance comparable to the induction-coil systems. Implementation of the SQUID system required development of devices capable of operating in magnetically unshielded environments with low noise, high slew rate, and wide bandwidth. Operation of the SQUID sensor in the highly dynamic environment of a towed bird was also necessary, and this implies a high dynamic range and high level of noise associated with the motion in Earth's magnetic field. The high dynamic range of the SQUID response was handled by a combination of resetting the SQUID flux locked loop, reducing the bandwidth, and providing high-gain feedback in parallel with the flux locked loop. A digital stacking filter was used to eliminate low-frequency noise associated with sensor motion. Isolation of the sensor from motion at the TEM signal frequencies required development of a sophisticated suspension system. The SQUID systems were tested over two known conductive targets, and their performance compared with the induction-coil TEM system. A comparative performance measure is developed to take the different sensitivities of the SQUID magnetometer and induction-coil receivers into account. This measure indicates that the SQUID system has superior performance for responses over earth structures with decay time constants greater than ∼6 ms when compared with the induction-coil signals. We also estimate the performance in comparison with integrated outputs of the induction-coil system and show that, at the demonstrated levels of SQUID performance, it is expected to have poorer performance by a factor of two or more. This disadvantage will be reduced for lower frequency, wider channel width TEM configurations or by improvements in the SQUID devices.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1999
DOI: 10.1109/77.783659
Publisher: Wiley
Date: 16-06-1983
Publisher: IOP Publishing
Date: 14-02-2022
Abstract: An important parameter of Josephson junctions (JJs) is the product of normal state resistance ( R n ) and critical current ( I c ) for designing superconductor analogue devices or digital circuits. Determination of R n and I c from voltage – current ( U–I ) characteristic curves often faces difficulties in particular I c is considerably reduced by intrinsic thermal or extrinsic electrical noises. Here, we propose a standard measurement method of R n and intrinsic critical current ( I ci ) for high- T c superconductor (HTS) grain boundary JJs operated in liquid nitrogen and low- T c superconductor (LTS) multilayer superconductor/normal-conductor/superconductor (SNS) JJs in liquid helium. The applicable condition of this method is that both HTS and LTS JJs have U–I curves compatible with resistively-shunted junction (RSJ) model. Both R n and I ci values are extracted by combining a geometric mean criterion to select a data set and a least-squares fitting method with the RSJ model, eliminating two distortion effects on U–I curves: noise-rounding and self-heating. The combined method ensures relative standard uncertainty values of 1.9% for R n and 8% for I ci or better, when the users follow the standard protocol. It is demonstrated that the combined method is valid for d -wave HTS JJs near 77 K, regardless of peculiarities such as 0– π junction transition in d -wave superconductors at lower temperatures, and s -wave LTS SNS JJs with a wide range of junction parameters. This work is the first step to facilitate standardization for superconductor electronics with JJs.
Publisher: IOP Publishing
Date: 12-08-2014
Publisher: Springer Science and Business Media LLC
Date: 07-1990
DOI: 10.1007/BF02396084
Publisher: Elsevier BV
Date: 07-1984
Publisher: AIP Publishing
Date: 06-1992
DOI: 10.1063/1.1143746
Abstract: A system has been designed for the characterizing of both low and high Tc junctions and devices. Fully automated measurements of resistance versus temperature, current versus voltage, and critical current versus applied field can be carried out on up to eight devices in one cooldown cycle. The system has been proven to reduce the repetitive nature and time involved in characterizing many junctions and devices, and greatly speeds up the analysis of changes in their parameters. Connections are made to the s le using spring contacts which eliminate the need for soldering to contact pads. One or two substrates with ten connections per substrate can be placed in the probe at the one time. A microcomputer with an IEEE488 interface, four standard instruments (two constant current sources, one digital multimeter, and one voltmeter), and a specially designed probe and software has been incorporated to provide a system which is very flexible and yet very simple to operate.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2017
Publisher: IOP Publishing
Date: 11-1999
Publisher: Elsevier BV
Date: 12-1985
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-1991
DOI: 10.1109/20.133849
Publisher: IOP Publishing
Date: 22-02-2011
Publisher: SPIE
Date: 10-1990
DOI: 10.1117/12.20885
Publisher: Elsevier BV
Date: 1989
Publisher: Elsevier BV
Date: 08-2003
Publisher: IEEE
Date: 09-2012
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2003
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2007
Publisher: No publisher found
Date: 2011
Publisher: Elsevier BV
Date: 05-1985
Publisher: AIP Publishing
Date: 15-09-1986
DOI: 10.1063/1.337213
Abstract: The room-temperature optical absorption spectra of indium nitride films in the subband-gap energy range 40 meV to 2.0 eV are surveyed. The major features are two broad absorption bands: a band-edge tail with a threshold energy of about 1 eV and a broad peak centered at about 0.3 eV. Both are strongly s le dependent and are identified with crystal defects associated with the observed electrical compensation of the shallow donor impurity. All s les show optical excitation of the 50–60-meV shallow donor seen in thermal excitation measurements, while some exhibit an absorption doublet, whose nature is not understood, around 0.15 eV.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2005
Publisher: Institution of Engineering and Technology (IET)
Date: 1984
DOI: 10.1049/EL:19840729
Publisher: IOP Publishing
Date: 11-03-2014
Publisher: IOP Publishing
Date: 14-05-2009
Publisher: Elsevier BV
Date: 10-1997
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1997
DOI: 10.1109/77.622007
Publisher: Springer Science and Business Media LLC
Date: 13-07-2017
Publisher: Informa UK Limited
Date: 03-2001
DOI: 10.1071/EG01009
Publisher: Elsevier BV
Date: 1989
Publisher: American Physical Society (APS)
Date: 15-01-1986
Publisher: IOP Publishing
Date: 05-12-2014
Publisher: Society of Exploration Geophysicists
Date: 2002
DOI: 10.1190/1.1817265
Publisher: Wiley
Date: 07-08-2006
Publisher: AIP Publishing
Date: 05-1986
DOI: 10.1063/1.336906
Abstract: Room-temperature optical absorption data in the 1.5–2.5-eV range are reported for indium nitride thin films prepared by reactive radio-frequency sputtering. The fundamental absorption edge in high-purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band-structure calculations. A significant Moss-Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-1997
DOI: 10.1109/77.621873
Publisher: IOP Publishing
Date: 30-11-2016
Publisher: Elsevier BV
Date: 11-1984
Publisher: Springer Science and Business Media LLC
Date: 02-05-2011
Publisher: Springer Science and Business Media LLC
Date: 02-1996
DOI: 10.1007/BF02583862
Publisher: Springer Science and Business Media LLC
Date: 1991
DOI: 10.1007/BF00722139
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2016
Publisher: IOP Publishing
Date: 22-10-2019
Publisher: Institute of Electronics, Information and Communications Engineers (IEICE)
Date: 2013
Publisher: IOP Publishing
Date: 19-10-2009
Publisher: IOP Publishing
Date: 05-1994
Publisher: Springer Japan
Date: 1993
Location: Australia
Start Date: 10-2008
End Date: 12-2013
Amount: $713,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 02-2004
End Date: 03-2005
Amount: $10,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 11-2020
End Date: 12-2022
Amount: $425,000.00
Funder: Australian Research Council
View Funded Activity