ORCID Profile
0000-0002-3196-0990
Current Organisation
University of Technology Sydney
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Nanotechnology | Photonics, Optoelectronics and Optical Communications | Nanomaterials | Photonics and Electro-Optical Engineering (excl. Communications) | Communications Technologies | Manufacturing Engineering | Functional Materials | Compound Semiconductors | Interdisciplinary Engineering not elsewhere classified | Microtechnology | Microelectromechanical Systems (MEMS) | Nanophotonics | Nanoscale Characterisation | Microwave and Millimetrewave Theory and Technology | Nanoelectromechanical Systems | Nanofabrication, Growth and Self Assembly
ANZSRC Socio-Economic Objective (SEO)
Expanding Knowledge in Technology | Expanding Knowledge in Engineering | Expanding Knowledge in the Physical Sciences | Residential Energy Conservation and Efficiency | Emerging Defence Technologies | Manufacturing not elsewhere classified |
Related Links
Publications
Characterization of spin-on zeolite films prepared from Silicalite-1 nanoparticle suspensions
Publisher: Elsevier BV
Date: 02-2009
Compressive stress relaxation through buckling of a low-k polymer-thin cap layer system
Publisher: AIP Publishing
Date: 25-02-2003
DOI: 10.1063/1.1558897
Abstract: The thermomechanical stability of a system composed of a metallic cap layer on top of a low-k thermosetting polymer film is investigated. It is observed that, when metal layers with high compressive stresses are used, a stress relaxation takes place during thermal anneal at temperatures above 300 °C through buckling of the two-layer system (wrinkling on rigid base). When designing low-k films for interconnects, this should be considered through a careful analysis of structural stability. The onset of this instability is allowed by the high compliance of the polymeric film, due to its transition from elastic to viscoelastic behavior through creep phenomena. This mechanism is more pronounced when a polymer film with 20% subtractive porosity is used.
On a more accurate assessment of scaled copper/low-k interconnects performance
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2007
Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures
Publisher: IEEE
Date: 06-2012
Post patterning meso porosity creation: a potential solution for pore sealing
Publisher: IEEE
Date: 2003
Engineering the Dissipation of Crystalline Micromechanical Resonators
Publisher: American Physical Society (APS)
Date: 03-04-2020
Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon
Publisher: Elsevier BV
Date: 10-2013
Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?
Publisher: AIP Publishing
Date: 02-02-2016
DOI: 10.1063/1.4941274
Abstract: The fn × Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have recently shown a fn × Q product of ∼1012 Hz for microstrings made of cubic silicon carbide on silicon, establishing a new state-of-the-art and opening new frontiers for mass sensing applications. In this work, we analyse the main parameters influencing the frequency and quality factor of silicon carbide microstrings (material properties, microstring geometry, cl ing condition, and environmental pressure) and investigate the potential for approaching the theoretical upper limit. We indicate that our previous result is only about a factor 2 lower than the thermoelastic dissipation limit. For fully reaching this upper limit, a substantial reduction of the defects in the silicon carbide thin film would be required, while maintaining a high residual tensile stress in the perfect-cl ed strings.
Graphitic‐Based Solid‐State Supercapacitors: Enabling Redox Reaction by In Situ Electrochemical Treatment
Publisher: Wiley
Date: 10-03-2020
Review of graphene for the generation, manipulation, and detection of electromagnetic fields from microwave to terahertz
Publisher: IOP Publishing
Date: 17-03-2022
Abstract: Graphene has attracted considerable attention ever since the discovery of its unprecedented properties, including its extraordinary and tunable electronic and optical properties. In particular, applications within the microwave to terahertz frequency spectrum can benefit from graphene’s high electrical conductivity, mechanical flexibility and robustness, transparency, support of surface-plasmon-polaritons, and the possibility of dynamic tunability with direct current to light sources. This review aims to provide an in-depth analysis of current trends, challenges, and prospects within the research areas of generating, manipulating, and detecting electromagnetic fields using graphene-based devices that operate from microwave to terahertz frequencies. The properties of and models describing graphene are reviewed first, notably those of importance to electromagnetic applications. State-of-the-art graphene-based antennas, such as resonant and leaky-wave antennas, are discussed next. A critical evaluation of the performance and limitations within each particular technology is given. Graphene-based metasurfaces and devices used to manipulate electromagnetic fields, e.g. wavefront engineering, are then examined. Lastly, the state-of-the-art of detecting electromagnetic fields using graphene-based devices is discussed.
Color chart for thin SiC films grown on Si substrates
Publisher: Trans Tech Publications, Ltd.
Date: 2013
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.740-742.279
Abstract: In this paper, a color chart was defined for thin SiC films grown on Si substrates. For SiC films thinner than 500 nm, the surface color was observed using an optical microscope with the incident light normally illuminated on the SiC surface. An image of the surface was then taken by a camera attached to the optical microscope and the surface color was defined using RGB code. For SiC films thicker than 500 nm, the image taken by the camera did not represent the real color of the SiC film. Therefore, for these thicker SiC films, the colors were defined by observing the films under daylight fluorescent lighting by naked eyes. It was found that the colors of the SiC films vary periodically as the thickness increased. No color saturation was found for SiC films up to 1185 nm thick.
Use of SAWs for sub-micron detection of dielectric damage in interconnects for microelectronics
Publisher: IEEE
Date: 2006
Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers
Publisher: AIP Publishing
Date: 20-10-2015
DOI: 10.1063/1.4934188
Abstract: We introduce a simple methodology to predict and tailor the intrinsic bending of a cantilever made of a single thin film of hetero-epitaxial silicon carbide grown on silicon. The combination of our novel method for the depth profiling of residual stress with a few nm resolution with finite element modelling allows for the prediction of the bending behaviour with great accuracy. We also demonstrate experimentally that a silicon carbide cantilever made of one distinct film type can be engineered to obtain the desired degree of either upward, flat, or downward bending, by selecting the appropriate thickness and cantilever geometry. A precise control of cantilever bending is crucial for microelectrical mechanical system applications such as micro-actuators, micro-switches, and resonant sensors.
Tunable nonlocal metasurfaces based on graphene for analogue optical computation
Publisher: Optica Publishing Group
Date: 28-04-2023
DOI: 10.1364/OME.484494
Abstract: Meta-optical devices have recently emerged as ultra-compact candidates for real-time computation in the spatial domain. The use of meta-optics for applications in image processing and wavefront sensing could enable an order of magnitude increase in processing speed and data throughput, while simultaneously drastically reducing the footprint of currently available solutions to enable miniaturisation. Most research to date has focused on static devices that can perform a single operation. Dynamically tunable devices, however, offer increased versatility. Here we propose graphene covered subwavelength silicon carbide gratings as electrically tunable optical computation and image processing devices at mid-infrared wavelengths.
Evidence of Large Voids in Pure‐Silica‐Zeolite Low‐k Dielectrics Synthesized by Spin‐on of Nanoparticle Suspensions
Publisher: Wiley
Date: 14-08-2008
A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors
Publisher: IOP Publishing
Date: 08-10-2015
DOI: 10.1088/0957-4484/26/43/434005
Abstract: We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip s les show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.
Additively Manufactured Millimeter-Wave Dual-Band Single-Polarization Shared Aperture Fresnel Zone Plate Metalens Antenna
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2021
Low-k properties and integration processes enabling reliable interconnect scaling to the 32 nm technology node
Publisher: IEEE
Date: 2006
Size-dependent characteristics of indium-seeded Si nanowire growth
Publisher: The Electrochemical Society
Date: 2008
DOI: 10.1149/1.2945800
On-grid batteries for large-scale energy storage: Challenges and opportunities for policy and technology
Publisher: Springer Science and Business Media LLC
Date: 05-2018
DOI: 10.1557/MRE.2018.11
A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers
Publisher: Springer Science and Business Media LLC
Date: 05-02-2015
DOI: 10.1557/JMR.2015.3
Thin-Film Electrodes Based on Two-Dimensional Nanomaterials for Neural Interfaces
Publisher: American Chemical Society (ACS)
Date: 28-07-2022
The impact of scaling on interconnect reliability
Publisher: IEEE
Date: 2005
Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers
Publisher: American Vacuum Society
Date: 2002
DOI: 10.1116/1.1428274
Abstract: This article presents a study on Dow Corning® XLK™, an inorganic porous material with about 50% porosity and a dielectric constant of 2.0. It focuses on matters linked to sealing the porous film by depositing a plasma enhanced chemical vapor deposition (PECVD) dielectric cap layer. The study shows that the material can be modified during cap deposition due to the fast diffusion of reactants and radicals through the porous network, and acquire totally new properties which can be either beneficial or detrimental, depending on the chosen process. In particular, it is found that cap deposition processes on XLK in an oxidizing ambient, as used for SiO2 deposition, should be avoided. On the other hand, a beneficial modification of the dielectric film has been observed after SiC:H capping. It is also shown that there exists a critical thickness of capping material below which the cap layer reveals the presence of pinholes. The critical thickness value for a PECVD SiC:H cap layer on top of an XLK film is around 25 nm.
Challenges of clean/strip processing for Cu/Low-k technology
Publisher: IEEE
Date: 2004
p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies
Publisher: American Chemical Society (ACS)
Date: 11-12-2019
Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier
Publisher: Elsevier BV
Date: 11-2003
Time evolution of graphene growth on SiC as a function of annealing temperature
Publisher: Elsevier BV
Date: 03-2016
An optimized process for the production of advanced planar wire grid plates as detectors for high energy physics experiments
Publisher: Elsevier BV
Date: 08-2001
Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects
Publisher: IEEE
Date: 2004
Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2003
Ultraviolet-Assisted Curing of Organosilicate Glass Low-k Dielectric by Excimer Lamps
Publisher: The Electrochemical Society
Date: 2008
DOI: 10.1149/1.2971025
Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films
Publisher: AIP Publishing
Date: 18-07-2002
DOI: 10.1063/1.1487907
Abstract: The deposition of homogeneous thin films on porous substrates has been investigated. The thin film deposition of Ta(N) by physical vapor deposition on porous films with different average pore sizes and material compositions has been studied. The continuity of Ta(N) films on top of porous low-k dielectrics is evaluated by means of ellipsometric porosimetry combined with sheet resistance and atomic force microscopy measurements. Interface reactions are analyzed by x-ray photoelectron spectroscopy profiling. It has been observed that the minimal Ta(N) thickness required to obtain a continuous metal layer on top of the porous film depends, on the one hand, on the porosity and pore size and, on the other hand, on the chemical interaction of the thin film with the porous substrate. The sealing of pores is favored by the presence of carbon in the dielectric matrix. This is explained through a mechanism of local enhancement of the degree of crosslinking in the dielectric matrix, catalyzed by Ta.
Understanding integration damage to low-k films: Mechanisms and dielectric behaviour at 100kHz and 4GHz
Publisher: IEEE
Date: 2006
On-Silicon Supercapacitors with Enhanced Storage Performance
Publisher: The Electrochemical Society
Date: 2017
DOI: 10.1149/2.0671704JES
Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis
Publisher: Elsevier BV
Date: 08-2006
Reaction of Trimethylchlorosilane in Spin-On Silicalite-1 Zeolite Film
Publisher: American Chemical Society (ACS)
Date: 05-04-2008
DOI: 10.1021/LA800086Y
Abstract: We present a study on the hydrophobization of spin-on Silicalite-1 zeolite films through silylation with trimethylchlorosilane. Microporous and micro-mesoporous Silicalite-1 films were synthesized by spin coating of suspensions of Silicalite-1 nanozeolite crystallized for different times. Ellipsometric porosimetry with toluene and water adsorbates reveals that silylation decreases the porosity and makes the films hydrophobic. The decrease in porosity depends on the exposed surface area in the pores. Water contact angle measurements confirm the hydrophobicity. Fourier transform infrared spectroscopy reveals that the trimethylsilyl groups are chemisorbed selectively on isolated silanols and less on geminal and vicinal silanols due to steric limitations. Time-of-flight secondary-ion mass spectroscopy and in situ ellipsometry analysis of the reaction kinetics show that the silylation is a bulk process occurring in the absence of diffusion limitation. Electrical current leakage on films decreases upon silylation. Silylation with trimethylchlorosilane is shown to be an effective hydrophobization method for spin-on Silicalite-1 zeolite films.
Growth of graphitic carbon layers around silicon carbide nanowires
Publisher: AIP Publishing
Date: 13-08-2019
DOI: 10.1063/1.5098987
Abstract: We demonstrate the ability to synthesize graphitic carbon sheets around cubic silicon carbide nanowires via an alloy-mediated catalytic process. The transmission electron microscopy analysis shows multilayer graphitic carbon sheets with a large interatomic layer distance of ∼0.45 nm, suggesting the presence of oxygen in the graphitic system. Oxygen-related peaks observed by energy-dispersive X-ray spectroscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy further confirm the oxidation of the graphitic carbon layers. A detailed investigation of the Raman spectra reveals a turbostratic stacking of the graphitic carbon layers. The turbostratic nature and the presence of oxidation in the graphitic carbon surrounding the silicon carbide nanowires make them a suitable platform for further functionalization, of particular interest for biosensing, as both graphitic carbon and silicon carbide are biocompatible.
Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers
Publisher: IOP Publishing
Date: 23-07-2014
DOI: 10.1088/0957-4484/25/32/325301
Abstract: Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.
Compact Multilayer Bandpass Filter Using Low-Temperature Additively Manufacturing Solution
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2021
Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV
Publisher: Elsevier BV
Date: 03-2014
Opportunities and perspectives for green chemistry in semiconductor technologies
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9GC01058K
Abstract: Semiconductor technologies offer a plethora of technological challenges and opportunities for a more extensive implementation of green chemistry principles.
Challenges for structural stability of ultra-low-k-based interconnects
Publisher: Elsevier BV
Date: 07-2004
Sidewall damage in silica-based low-k material induced by different patterning plasma processes studied by energy filtered and analytical scanning TEM
Publisher: Elsevier BV
Date: 03-2007
Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: a review
Publisher: IOP Publishing
Date: 07-2020
Abstract: The ability to control the interaction of light and matter at the nanoscale is at the heart of the field of nanophotonics. This subdiffractional confinement of light can be achieved through the stimulation of surface polaritons, most notably surface plasmon polaritons (SPPs). However, the high optical losses and lack of tunability of conventional plasmonic materials have hindered major progress in this field. In the search for alternative low-loss and tunable materials, graphene and polar dielectric materials are viewed as potential alternatives to more common metal-based plasmonic materials. In particular, the possibility of combining the tunable nature of graphene SPPs with the high-quality factors and long lifetimes of surface phonon-polaritons (SPhPs) modes supported in polar dielectric materials (e.g. SiC) offers great promise for advanced nanophotonic applications. The combination of graphene SPPs and SPhPs supported in SiC is even more pertinent as this material system can be realized in the form of epitaxial graphene (EG), whereby sublimation of silicon from a SiC results in a surface reconstruction into a graphene surface termination. This offers an ideal technology platform for realizing hybrid SPP-SPhP modes. In this review, we outline advances in graphene plasmonics and the generation of SPhPs in polar materials, in the context of epitaxial graphene. We review recent attempts at realizing such coupling of graphene SPPs with phonon and SPhP modes in SiC, as well as covering such modes in other polar materials and conclude with an overview of advantages and challenges for further advancement of nanophotonics based on graphene on silicon carbide for on-chip light manipulation.
Characteristics of Epitaxial Graphene on SiC/Si Substrates in the Radio Frequency Spectrum
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2023
Low dielectric constant materials for microelectronics
Publisher: AIP Publishing
Date: 19-05-2003
DOI: 10.1063/1.1567460
Abstract: The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the characteristics and properties of low-k dielectrics. In addition it addresses some of the needs for improved metrology for determining pore sizes, size distributions, structure, and mechanical properties.
Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing
Publisher: IOP Publishing
Date: 21-03-2016
DOI: 10.1088/0957-4484/27/18/185601
Abstract: We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon
Publisher: AIP Publishing
Date: 02-05-2023
DOI: 10.1063/5.0147376
Abstract: Epitaxial graphene (EG) on cubic silicon carbide (3C-SiC) on silicon holds the promise of tunable nanoelectronic and nanophotonic devices, some uniquely unlocked by the graphene/cubic silicon carbide combination, directly integrated with the current well-established silicon technologies. Yet, the development of graphene field-effect devices based on the 3C-SiC/Si substrate system has been historically hindered by poor graphene quality and coverage, as well as substantial leakage issues of the heteroepitaxial system. We address these issues by growing EG on 3C-SiC on highly resistive silicon substrates using an alloy-mediated approach. In this work, we demonstrate a field-effect transistor based on EG/3C-SiC/Si with gate leakage current 6 orders of magnitude lower than the drain current at room temperature, which is a vast improvement on the current literature, opening the possibility for dynamically tunable nanoelectronic and nanophotonic devices on silicon at the wafer level.
Erratum: Corrigendum to ''Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV'' [Carbon 68 (2014) 563-572]
Publisher: Elsevier BV
Date: 04-2015
Graphene growth on silicon carbide: A review
Publisher: Wiley
Date: 02-06-2016
Characterization of a Molecular Sieve Coating Using Ellipsometric Porosimetry
Publisher: American Chemical Society (ACS)
Date: 22-11-2007
DOI: 10.1021/LA7028388
Abstract: Ellipsometric porosimetry was used to determine the adsorption isotherms of toluene, methanol, and water on b-oriented Silicalite-1 coatings with a thickness of less than ca. 250 nm and to obtain adsorption kinetics. The adsorption isotherms are of sufficient quality to reveal several aspects of the pore structure such as the adsorbate capacity and the adsorbate/framework affinity. The use of a combination of different molecular probes in ellipsometric porosimetry to elucidate the molecular accessibility of Silicalite-1 pores is demonstrated. It is shown that ellipsometric porosimetry is an appropriate technique for probing the influence of aging of the Silicalite-1 coating and of planarization polishing on the porosity, pore accessibility, and adsorbate/framework affinity.
Integration of Low‐ k Dielectric Films in Damascene Processes
Publisher: Wiley
Date: 16-02-2007
Cryogenic plasmas for controlled processing of nanoporous materials
Publisher: Royal Society of Chemistry (RSC)
Date: 2011
DOI: 10.1039/C0CP02660C
Abstract: Plasma processing at cryogenic temperatures tremendously suppresses the depth penetration of plasma radical species within nanoporous materials. We demonstrate that this confining effect is surprisingly unrelated to changes in the phase diffusivity of radical species gas, but is determined by the increase of the sticking coefficient and the radical recombination and reaction factors, favoring an early irreversible surface adsorption of the plasma radical species.
Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric
Publisher: IEEE
Date: 2000
A perspective on electroencephalography sensors for brain-computer interfaces
Publisher: IOP Publishing
Date: 10-2022
Abstract: This Perspective offers a concise overview of the current, state-of-the-art, neural sensors for brain-machine interfaces, with particular attention towards brain-controlled robotics. We first describe current approaches, decoding models and associated choice of common paradigms, and their relation to the position and requirements of the neural sensors. While implanted intracortical sensors offer unparalleled spatial, temporal and frequency resolution, the risks related to surgery and post-surgery complications pose a significant barrier to deployment beyond severely disabled in iduals. For less critical and larger scale applications, we emphasize the need to further develop dry scalp electroencephalography (EEG) sensors as non-invasive probes with high sensitivity, accuracy, comfort and robustness for prolonged and repeated use. In particular, as many of the employed paradigms require placing EEG sensors in hairy areas of the scalp, ensuring the aforementioned requirements becomes particularly challenging. Nevertheless, neural sensing technologies in this area are accelerating thanks to the advancement of miniaturised technologies and the engineering of novel biocompatible nanomaterials. The development of novel multifunctional nanomaterials is also expected to enable the integration of redundancy by probing the same type of information through different mechanisms for increased accuracy, as well as the integration of complementary and synergetic functions that could range from the monitoring of physiological states to incorporating optical imaging.
A novel approach to resistivity and interconnect modeling
Publisher: Elsevier BV
Date: 11-2006
Controlling the surface roughness of epitaxial SiC on silicon
Publisher: AIP Publishing
Date: 23-05-2014
DOI: 10.1063/1.4879237
Abstract: The surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface roughness of epitaxial SiC to produce an optimal template. We first explore 3C-SiC growth on various degrees of offcut Si(111) substrates, although we observe that the SiC roughness tends to worsen as the degree of offcut increases. Hence we focus on post-growth approaches available on full wafers, comparing chemical mechanical polishing (CMP) and a novel plasma smoothening process. The CMP leads to a dramatic improvement, bringing the SiC surface roughness down to sub-nanometer level, though removing about 200 nm of the SiC layer. On the other hand, our proposed HCl plasma process appears very effective in smoothening selectively the sharpest surface topography, leading up to 30% improvement in SiC roughness with only about 50 nm thickness loss. We propose a simple physical model explaining the action of the plasma smoothening.
Toward Label-Free Biosensing With Silicon Carbide: A Review
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2016
Ashing of photoresists using dielectric barrier discharge cryoplasmas
Publisher: American Vacuum Society
Date: 11-2013
DOI: 10.1116/1.4825202
The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy
Publisher: Elsevier BV
Date: 09-2015
Solid source growth of graphene with Ni-Cu catalysts: towards high quality in situ graphene on silicon
Publisher: IOP Publishing
Date: 02-2017
Dependence of the minimal PVD TA(N) sealing thickness on the porosity of Zirkon™ LK dielectric films
Publisher: Elsevier BV
Date: 10-2002
Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
Publisher: The Electrochemical Society
Date: 2008
DOI: 10.1149/1.2885041
Graphene-Based Planar Microsupercapacitors: Recent Advances and Future Challenges
Publisher: Wiley
Date: 18-10-2019
Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]
Publisher: AIP Publishing
Date: 07-11-2016
DOI: 10.1063/1.4967228
Challenges in the implementation of low-k dielectrics in the back-end of line
Publisher: Elsevier BV
Date: 04-1994
Mechanical and electromechanical properties of graphene and their potential application in MEMS
Publisher: IOP Publishing
Date: 06-01-2017
A resonant method for determining the residual stress and elastic modulus of a thin film
Publisher: AIP Publishing
Date: 15-07-2013
DOI: 10.1063/1.4813843
Abstract: By measuring the resonant frequencies of the first two symmetric vibration modes of a circular thin-film diaphragm and solving the Rayleigh-Ritz equation analytically, the residual stress and elastic modulus of the film were determined simultaneously. The results obtained employing this method are in excellent agreement with those obtained numerically in finite element modelling when tested using freestanding circular SiC diaphragms with residual tensile stress. The stress and modulus values are also in reasonably good agreement with those obtained from nanoindentation and wafer curvature measurements, respectively.
Characterisation of JSR’s spin-on hardmask FF-02
Publisher: Elsevier BV
Date: 11-2003
Use of Nanoindentation to Characterise the Plasma Damage Region in Low-k Dielectric Films
Publisher: ASMEDC
Date: 2006
Abstract: The thermo-mechanical robustness of interconnect structures is a key reliability concern for integrated circuits. The introduction of new low dielectric constant (low-k) materials with deteriorated mechanical strength (i.e., Young Modulus decreases exponentially with film porosity, which is needed to lower the k value of the dielectric materials) to meet the RC delay goals increase the risk of mechanical adhesive and/or cohesive failure of the device during packaging or even in service. Therefore, the mechanical properties of low-k dielectrics must be studied in detail. This is made very challenging by the fact that they have submicron thickness and that they often display a graded structure due to the damage introduced by exposure to different plasmas during processing. In this context, we demonstrate that nanoindentation is very well suited to study this type of materials. We will show how conventional depth sensing nanoindentation is of limited value to characterise the extent of the plasma induced damage because this extents just a few tens of nanometres and the graded structure can not be s led with enough depth resolution. However, nanoindentation in modulus mapping mode can achieve enough depth resolution to characterise such nanoscale graded structures. In this technique, the electrostatic force acting on the indenter tip is sinusoidally modulated, while contact mode imaging at a very small force is performed. The dynamical response is then analyzed to extract the local indentation modulus of the s le at each pixel. By using this technique, we have depth profiled the mechanical properties of the plasma induced damage region of OSG films exposed to different plasmas, by acquiring modulus maps as a function of thickness removed in wear experiments. The results correlate well with the density depth profiles derived from X-Ray Reflectivity measurements.
Nanoindentation for reliability assessment of ULK films and interconnects structures
Publisher: Elsevier BV
Date: 06-2013
Electrical equivalent sidewall damage in patterned low-k dielectrics
Publisher: The Electrochemical Society
Date: 2004
DOI: 10.1149/1.1649401
Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)
Publisher: IOP Publishing
Date: 15-02-2018
Abstract: Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the s le at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene's flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.
Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon
Publisher: AIP Publishing
Date: 24-02-2014
DOI: 10.1063/1.4866268
Abstract: We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f0) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-cl ed string structures proceeds through simple silicon surface micromachining processes. The resulting f × Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f × Q product for the fundamental mode of the strings shows a four-fold increase.
Growing Graphene on Semiconductors
Publisher: Jenny Stanford Publishing
Date: 08-09-2017
Ultraviolet-Assisted Curing of Polycrystalline Pure-Silica Zeolites: Hydrophobization, Functionalization, and Cross-Linking of Grains
Publisher: American Chemical Society (ACS)
Date: 11-07-2007
DOI: 10.1021/JA0723737
Cover Picture: Graphitic‐Based Solid‐State Supercapacitors: Enabling Redox Reaction by In Situ Electrochemical Treatment (Batteries & Supercaps 7/2020)
Publisher: Wiley
Date: 17-06-2020
Correlation between barrier integrity and TDDB performance of copper porous low-k interconnects
Publisher: Elsevier BV
Date: 10-2004
Surface Acoustic Waves as a technique for in-line detection of processing damage to low-k dielectrics
Publisher: IEEE
Date: 2005
Plasma assisted growth of nanotubes and nanowires
Publisher: Elsevier BV
Date: 09-2007
Potential of epitaxial silicon carbide microbeam resonators for chemical sensing
Publisher: Wiley
Date: 09-2017
Graphitic‐Based Solid‐State Supercapacitors: Enabling Redox Reaction by In Situ Electrochemical Treatment
Publisher: Wiley
Date: 17-06-2020
Extent of plasma damage to porous organosilicate films characterized with nanoindentation, x-ray reflectivity, and surface acoustic waves
Publisher: Springer Science and Business Media LLC
Date: 12-2006
Abstract: It is known that porous organosilicate glass (OSG) dielectrics tend to lose functional groups and become denser upon the chemical and physical action of the plasmas, but an accurate analysis and estimation of the depth and degree of film densification is not straightforward. In this study, we show that the combination of techniques like x-ray reflectivity, surface acoustic waves, and nanoindentation in depth-sensing and modulus mapping mode allow a complete and self-consistent physical analysis of the damage induced by the direct exposure of porous OSG films to different plasma ambients in reactive ion etching mode. We demonstrate for the chosen dielectric that the characteristics of the damage regions such as density and elastic modulus are very similar regardless of the reducing or oxidizing nature of the plasma. Nevertheless, the physical depth of the damage region shows large variation. Capabilities and limitations of each of the chosen analysis techniques are also discussed.
Fabrication of free-standing silicon carbide on silicon microstructures via massive silicon sublimation
Publisher: American Vacuum Society
Date: 28-09-2020
DOI: 10.1116/6.0000490
Abstract: Heteroepitaxial thin films of cubic silicon carbide (3C-SiC) on silicon offer a promising platform for leveraging the properties of SiC, such as wide bandgap, high mechanical strength, and chemical stability on a silicon substrate. Such heteroepitaxial films also attract considerable interest as pseudosubstrates for the growth of GaN as well as graphene on silicon wafers. However, due to a substantial lattice mismatch, the growth of 3C-SiC on silicon leads to a considerable amount of stresses, defects, and diffusion phenomena at the heterointerface. We show here that the extent of such interface phenomena and stresses is so large that, after patterning of the SiC, a massive sublimation of the silicon underneath the SiC/Si interface is promoted via a high-temperature anneal, either in high or medium vacuum ambient. A micrometer-thick air gap can be formed below the SiC structures, making them suspended. Hence, the described approach can be used as a straightforward methodology to form free-standing silicon carbide structures without the need for wet or anisotropic etching and could be of great interest for devices where suspended moving parts are needed, such as micro- and nanoelectromechanical systems.
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon
Publisher: AIP Publishing
Date: 31-05-2018
DOI: 10.1063/1.5026124
Abstract: Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and h ers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.
Barrier studies on porous silk semiconductor dielectric
Publisher: Elsevier BV
Date: 11-2003
A graphene platform on silicon for the Internet of Everything
Publisher: IEEE
Date: 03-2018
A Review of Algorithms and Hardware Implementations for Spiking Neural Networks
Publisher: MDPI AG
Date: 24-05-2021
Abstract: Deep Learning (DL) has contributed to the success of many applications in recent years. The applications range from simple ones such as recognizing tiny images or simple speech patterns to ones with a high level of complexity such as playing the game of Go. However, this superior performance comes at a high computational cost, which made porting DL applications to conventional hardware platforms a challenging task. Many approaches have been investigated, and Spiking Neural Network (SNN) is one of the promising candidates. SNN is the third generation of Artificial Neural Networks (ANNs), where each neuron in the network uses discrete spikes to communicate in an event-based manner. SNNs have the potential advantage of achieving better energy efficiency than their ANN counterparts. While generally there will be a loss of accuracy on SNN models, new algorithms have helped to close the accuracy gap. For hardware implementations, SNNs have attracted much attention in the neuromorphic hardware research community. In this work, we review the basic background of SNNs, the current state and challenges of the training algorithms for SNNs and the current implementations of SNNs on various hardware platforms.
A YAP camera 40 x 40 mm(2) with fast readout electronics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-1998
DOI: 10.1109/23.725268
Designing concentric nanoparticles for surface-enhanced light-matter interaction in the mid-infrared
Publisher: Optica Publishing Group
Date: 17-06-2022
DOI: 10.1364/OE.462117
Abstract: Nanosized particles with high responsivity in the infrared spectrum are of great interest for biomedical applications. We derive a closed-form expression for the polarizability of nanoparticles made of up to three concentric nanolayers consisting of a frequency dependent polar dielectric core, low permittivity dielectric spacer shell and conductive graphene outer shell, using the electrostatic Mie theory in combination with conductive layer in a dipole approximation. We use the obtained formula to investigate SiC, GaN and hBN as core materials, and graphene as conductive shell, separated by a low-permittivity dielectric spacer. Three-layer nanoparticles demonstrate up to a 12-fold increased mid-infrared (MIR) absorption as compared to their monolithic polar dielectrics, and up to 1.7 as compared to two-layer (no spacer) counterparts. They also show orders of magnitude enhancement of the nanoparticle scattering efficiency. The enhancement originates from the phonon-plasmon hybridization thanks to the graphene and polar dielectric combination, assisted by coupling via the low permittivity spacer, resulting in the splitting of the dielectric resonance into two modes. Those modes extend beyond the dielectric’s Reststrahlen band and can be tuned by tailoring the nanoparticles characteristics as they can be easily calculated through the closed-form expression. Nanoparticles with dual band resonances and enhanced absorption and scattering efficiencies in the MIR are of high technological interest for biomedical applications, such as surface -enhanced vibrational spectroscopies allowing simultaneous imaging and spectroscopy of s les, as well as assisting guided drug delivery.
Direct synthesis of nanopatterned epitaxial graphene on silicon carbide
Publisher: IOP Publishing
Date: 19-07-2023
Abstract: This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on silicon carbide on silicon substrates. A catalytic alloy tailored to optimal SiC graphitization is pre-patterned with common lithography and lift-off techniques to form planar graphene structures on top of an unpatterned SiC layer. This method is compatible with both electron-beam lithography and UV-lithography, and graphene gratings down to at least ∼100 nm width/space can be realized at the wafer scale. The minimum pitch is limited by the flow of the metal catalyst during the liquid-phase graphitization process. We expect that the current pitch resolution could be further improved by optimizing the metal deposition method and lift-off process.
Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review
Publisher: MDPI AG
Date: 24-06-2020
DOI: 10.3390/APP10124350
Abstract: The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.
Electron effective attenuation length in epitaxial graphene on SiC
Publisher: IOP Publishing
Date: 11-2019
Abstract: The inelastic mean free path (IMFP) for carbon-based materials is notoriously challenging to model, and moving from bulk materials to 2D materials may exacerbate this problem, making the accurate measurements of IMFP in 2D carbon materials critical. The overlayer-film method is a common experimental method to estimate IMFP by measuring electron effective attenuation length (EAL). This estimation relies on an assumption that elastic scattering effects are negligible. We report here an experimental measurement of electron EAL in epitaxial graphene on SiC using photoelectron spectroscopy over an electron kinetic energy range of 50-1150 eV. We find a significant effect of the interface between the 2D carbon material and the substrate, indicating that the attenuation length in the so-called 'buffer layer' is smaller than for free-standing graphene. Our results also suggest that the existing models for estimating IMFPs may not adequately capture the physics of electron interactions in 2D materials.
Power electronics with wide bandgap materials: Toward greener, more efficient technologies
Publisher: Springer Science and Business Media LLC
Date: 05-2015
DOI: 10.1557/MRS.2015.71
Integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond using 193 nm optical lithography with dipole illumination
Publisher: IEEE
Date: 2003
MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors
Publisher: IOP Publishing
Date: 15-02-2021
Abstract: The potential of transition metal dichalcogenides such as MoS 2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transition metal dichalcogenides can address this gap. Here, we explore the use of a layered electrode structure for solid-state supercapacitors, made of MoS 2 and epitaxial graphene (EG) on cubic silicon carbide for on-silicon energy storage. We show that the energy storage of the solid-state supercapacitors can be significantly increased by creating layered MoS 2 /graphene electrodes, yielding a substantial improvement as compared to electrodes using either EG or MoS 2 alone. We conclude that the conductivity of EG and the growth morphology of MoS 2 on graphene play an enabling role in the successful use of transition metal dichalcogenides for on-chip energy storage.
Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage
Publisher: IOP Publishing
Date: 24-07-2017
Abstract: Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga
Aggressive scaling of Cu/low k: Impact on metrology
Publisher: AIP
Date: 2005
DOI: 10.1063/1.2063005
Noninvasive Sensors for Brain–Machine Interfaces Based on Micropatterned Epitaxial Graphene
Publisher: American Chemical Society (ACS)
Date: 16-03-2023
3D-Printed Low-Profile Single-Substrate Multi-Metal Layer Antennas and Array With Bandwidth Enhancement
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2020
Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics
Publisher: MDPI AG
Date: 08-09-2021
DOI: 10.3390/NANO11092339
Abstract: The mid-infrared (MIR) is an exciting spectral range that also hosts useful molecular vibrational fingerprints. There is a growing interest in nanophotonics operating in this spectral range, and recent advances in plasmonic research are aimed at enhancing MIR infrared nanophotonics. In particular, the design of hybrid plasmonic metasurfaces has emerged as a promising route to realize novel MIR applications. Here we demonstrate a hybrid nanostructure combining graphene and silicon carbide to extend the spectral phonon response of silicon carbide and enable absorption and field enhancement of the MIR photon via the excitation and hybridization of surface plasmon polaritons and surface phonon polaritons. We combine experimental methods and finite element simulations to demonstrate enhanced absorption of MIR photons and the broadening of the spectral resonance of graphene-coated silicon carbide nanowires. We also indicate subwavelength confinement of the MIR photons within a thin oxide layer a few nanometers thick, sandwiched between the graphene and silicon carbide. This intermediate shell layer is characteristically obtained using our graphitization approach and acts as a coupling medium between the core and outer shell of the nanowires.
Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure
Publisher: Elsevier BV
Date: 02-2007
Stress corrosion of organosilicate glass films in aqueous environments: Role of pH
Publisher: Springer Science and Business Media LLC
Date: 03-2008
Abstract: Subcritical cracking of thin glass films caused by stress-corrosion phenomena cannot be neglected when it comes to application and manufacturing processes that involve exposure to aqueous environments. A protocol is introduced to allow for a quantitative study of stress corrosion through channel cracking experiments. By this method, an exponential dependence of the crack propagation rate on the pH of the aqueous environment is revealed. Therefore, this behavior should be accounted for through the use of an appropriate pre-exponential factor in the expression of channel cracking rate. This factor should reflect the reduced crack resistance of the glass film caused by the weakening of the silica bonds behind the crack tip in the aqueous environment. A direct comparison between commercial slurries and reference solutions confirms that the crack resistance is a function of the pH of the ambient.
Characterization of porous structure in ultra-low-k dielectrics by depositing thin conductive cap layers
Publisher: Elsevier BV
Date: 2003
Electrical challenges of heteroepitaxial 3C-SiC on silicon
Publisher: Trans Tech Publications, Ltd.
Date: 06-2018
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.924.297
Abstract: Epitaxial cubic silicon carbide films on silicon have attracted extensive interest for semiconductor device applications such as high-voltage, high-frequency diodes, and hetero-junction bi-polar transistors [1]. This is because they can offer access to the properties of the SiC material such as its wide band gap and high thermal conductivity on the more conventional silicon substrates [2]. Rahimi et al . have shown, however, that the substantial tensile strain generated from the lattice and thermal expansion coefficient mismatch between 3C-SiC and silicon, may reduce the band gap in the SiC epitaxial films [3]. Nevertheless, the impact of this phenomenon on the electrical and electronic performance of the epitaxial SiC films on silicon has not been fully elucidated to date such information is vital to obtain the optimal performance of devices fabricated from these strained heterojunctions.
Ultra-violet-assisted cure of spin-on silicalite-1 films
Publisher: Elsevier
Date: 2007
Low-damage damascene patterning of SiOC(H) low-k dielectrics
Publisher: IEEE
Date: 2005
Impact of LKD5109™ low-k to cap/liner interfaces in single damascene process and performance
Publisher: Elsevier BV
Date: 11-2003
Highly compressed nano-layers in epitaxial silicon carbide membranes for MEMs sensors
Publisher: IEEE
Date: 05-2014
Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures
Publisher: AIP Publishing
Date: 04-07-2016
DOI: 10.1063/1.4955453
Abstract: Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.
Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
Publisher: SPIE
Date: 11-03-2010
DOI: 10.1117/12.852587
Non-invasive on-skin sensors for brain machine interfaces with epitaxial graphene
Publisher: IOP Publishing
Date: 12-2021
Abstract: Objective . Brain–machine interfaces are key components for the development of hands-free, brain-controlled devices. Electroencephalogram (EEG) electrodes are particularly attractive for harvesting the neural signals in a non-invasive fashion. Approach. Here, we explore the use of epitaxial graphene (EG) grown on silicon carbide on silicon for detecting the EEG signals with high sensitivity. Main results and significance. This dry and non-invasive approach exhibits a markedly improved skin contact impedance when benchmarked to commercial dry electrodes, as well as superior robustness, allowing prolonged and repeated use also in a highly saline environment. In addition, we report the newly observed phenomenon of surface conditioning of the EG electrodes. The prolonged contact of the EG with the skin electrolytes functionalize the grain boundaries of the graphene, leading to the formation of a thin surface film of water through physisorption and consequently reducing its contact impedance more than three-fold. This effect is primed in highly saline environments, and could be also further tailored as pre-conditioning to enhance the performance and reliability of the EG sensors.
Stress in next generation interconnects
Publisher: AIP
Date: 2006
DOI: 10.1063/1.2173545
All-solid-state supercapacitors on silicon using graphene from silicon carbide
Publisher: AIP Publishing
Date: 02-05-2016
DOI: 10.1063/1.4948768
Abstract: Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an ex le of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm−2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.
Zeolite-Inspired Low-kDielectrics Overcoming Limitations of Zeolite Films
Publisher: American Chemical Society (ACS)
Date: 24-12-2008
DOI: 10.1021/JA8066572
Abstract: Spin-on zeolite films deposited from Silicalite-1 nanocrystal suspensions prepared by hydrothermal treatment of clear solutions have the required properties for insulating media in microelectronics. However, on the scale of the feature sizes in on-chip interconnects of a few tens of nanometers, their homogeneity is still insufficient. We discovered a way to overcome this problem by combining the advantages of the clear solution approach of Silicalite-1 synthesis with a sol-gel approach. A combination of tetraethyl orthosilicate and methyltrimethoxysilane silica sources was hydrolyzed and cocondensed in the presence of an aqueous tetraalkylammonium hydroxide template. The resulting suspension of nanoparticles of a few nanometers in size together with residual oligomeric silica species were spun onto support. The final zeolite-inspired low-k films (ZLK) with respect to pore size and homogeneity satisfied all requirements and presented excellent hydrophobicity, stiffness, and dielectric constant. The size and content of initially formed nanoparticles and the spatial hindrance promoted by occluded tetraalkylammonium molecules were found to be crucial elements in the definition of the final pore network.
Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation
Publisher: AIP Publishing
Date: 03-2006
DOI: 10.1063/1.2178393
Abstract: The short-ranged bonding structure of organosilicate glasses can vary to a great extent and is directly linked to the mechanical properties of the thin film material. The combined action of ultraviolet (UV) radiation and thermal activation is shown to generate a pronounced rearrangement in the bonding structure of thin organosilicate glass films involving no significant compositional change or film densification. Nuclear magnetic resonance spectroscopy indicates loss of –OH groups and an increase of the degree of cross-linking of the organosilicate matrix for UV-treated films. Fourier transform infrared spectroscopy shows a pronounced enhancement of the Si–O–Si network bond structure, indicating the formation of more energetically stable silica bonds. Investigation with x-ray reflectivity and ellipsometric porosimetry indicated only minor film densification. As a consequence, the mechanical properties of microporous organosilicate dielectric films are substantially enhanced while preserving the organosilicate nature and pristine porosity of the films. UV-treated films show an increase in elastic modulus and hardness of more than 40%, and a similar improvement in fracture energy compared to untreated films. A minor increase in material dielectric constant from 3.0 to 3.15 was observed after UV treatment. This mechanism is of high relevance for the application of organosilicate glasses as dielectric materials for microelectronics interconnects, for which a high mechanical stability and a low dielectric constant are both essential film requirements.
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