ORCID Profile
0000-0002-2215-097X
Current Organisation
CSIRO
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Publisher: AIP Publishing
Date: 24-03-2008
DOI: 10.1063/1.2903698
Abstract: A combination of electron paramagnetic resonance (EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces. EPR measurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface recombination activity by a factor of more than two, for B diffused s les with a sheet resistance of ∼250Ω∕◻◻.
Publisher: Wiley
Date: 2006
DOI: 10.1002/PIP.684
Publisher: AIP Publishing
Date: 25-06-2007
DOI: 10.1063/1.2749867
Abstract: A combination of capacitance-voltage and lifetime decay measurements is used to show that corona biasing of silicon oxidized s les results in the generation of additional interface defects and an increase in surface recombination. The onset of interface degradation occurs at relatively low electric fields, estimated to be less than ∼+∕−1.2MV∕cm. The majority of the defects generated by corona biasing can be removed by a short annealing at 400°C. The results are consistent with the hypothesis that atomic hydrogen is chiefly responsible for the observed degradation. Corona biasing, even at low electric fields, cannot be relied on as a noninvasive characterization tool.
Publisher: IEEE
Date: 05-2008
Publisher: AIP Publishing
Date: 22-01-2007
DOI: 10.1063/1.2434172
Abstract: The authors report a simple technique to determine the surface recombination velocity of silicon and other semiconductor surfaces which have been passivated with a dielectric layer, as a function of charge density. A metal-oxide-semiconductor structure, employing large area, partially transparent metal contacts, is used to enable the charging of the surfaces. Simultaneous measurement of the emitter saturation current density Joe and the effective instantaneous lifetime τinst allows accurate extraction of the effective surface recombination velocity Seff at any given injection level. Extremely low Joe values of 1.8fAcm−2 are measured on the silicon-silicon oxide (Si–SiO2) interface of a thermally oxidized, charged wafer.
Publisher: IOP Publishing
Date: 22-10-2019
Publisher: AIP Publishing
Date: 10-08-2015
DOI: 10.1063/1.4928589
Abstract: Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
Location: Australia
No related grants have been discovered for Wendy Purches.