ORCID Profile
0000-0002-9010-0712
Current Organisations
IMEC
,
Indian Institute of Technology Delhi
,
Macquarie University
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Publisher: Elsevier BV
Date: 07-2021
Publisher: Springer Singapore
Date: 14-12-2022
Publisher: IOP Publishing
Date: 06-2022
Abstract: In this article, we have presented the effect of low gate bias on short circuit current gain h 21 beyond cutoff frequency in AlGaN/GaN HEMT. A small-signal model, based on its intrinsic and extrinsic parameter values, is simulated beyond the cutoff frequency to analyze its peak. From the study, it has been observed that the first peak of short circuit current gain has the resonance frequency as well as magnitude variation with respect to low gate voltages. Whereas, the second peak of the current gain h 21 has only magnitude dependency on low gate voltage with fixed resonance frequency. The relevance of this study is to provide a comprehensive insight to the circuit designer to efficiently consider these windows of current gain peak beyond the cutoff frequency into their design. For this analysis, we have taken AlGaN/GaN HEMT device with a channel length of 0.8 μ m and 2 × 200 μ m 2 gate width. A measured S-parameter data up to 40 GHz at low gate bias is used to extract the model parameters.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2023
Publisher: Springer Science and Business Media LLC
Date: 28-08-2020
Publisher: Springer Singapore
Date: 14-12-2022
Publisher: IEEE
Date: 11-02-2022
Publisher: IEEE
Date: 11-02-2022
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2023
Publisher: Springer Science and Business Media LLC
Date: 02-04-2021
Publisher: Springer Science and Business Media LLC
Date: 18-03-2021
Publisher: Galenos Yayinevi
Date: 12-2021
Publisher: Springer Science and Business Media LLC
Date: 30-07-2021
Publisher: IEEE
Date: 02-2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2023
Publisher: Springer Science and Business Media LLC
Date: 14-04-2021
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2023
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2022
Publisher: Springer Singapore
Date: 14-12-2022
Publisher: Research Square Platform LLC
Date: 15-02-2021
DOI: 10.21203/RS.3.RS-193055/V1
Abstract: This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (N Dn ), channel thickness (t si ), oxide thickness (t ox ), and channel length ratio (L 1 : L 2 ). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.
Publisher: IOP Publishing
Date: 25-05-2022
Abstract: In this article, a comprehensive analysis of the impact of electrothermal characteristics in the junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the Sentaurus TCAD. The combined study of the variation in thermal contact resistance (1 × 10
Publisher: IEEE
Date: 19-02-2021
Publisher: Elsevier BV
Date: 09-2023
Publisher: Springer Science and Business Media LLC
Date: 06-01-2021
No related grants have been discovered for Nitish Kumar.