ORCID Profile
0000-0002-5514-9289
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Publisher: Elsevier BV
Date: 07-2022
DOI: 10.1016/J.IJBIOMAC.2022.05.125
Abstract: In this work, the extraction of carboxylated nanocrystalline cellulose from oat husk as an agricultural waste was conducted by ammonium persulfate oxidation. This is a one-step and efficient process for removal of amorphous regions from cellulosic fibers. The mean size of cellulose nanoparticles is about 30 nm with spherical morphology. The comparison of the infrared spectrum of the nanoparticles of cellulose and the primary oat husk evidences the successful elimination of non-cellulosic structures such as hemicellulose, lignin in nanocellulose s le. The X-ray diffraction patterns show higher degree of crystalline index in nanocellulose (57%) compared to the primary oat husk (38%). The comparison of the onsets of temperature degradation of the s les shows nanocellulose is less thermally stable than oat husk. The hydrophilic surface of the nanocellulose was modified using cetyltrimethylammonium bromide (CTAB) cationic surfactant to improve loading capacity of hydrophobic indomethacin drug which has a low bioavailability and poor solubility in water. In vitro release profile of the indomethacin and drug release mechanism was studied. The results show the 67% of drug is released within 12 h and CTAB modified nanocellulose greatly acts as an indomethacin controlled-release carrier. Study of the in vitro drug release kinetics shows driven mechanism is diffusion-controlled release.
Publisher: MDPI AG
Date: 23-12-2022
DOI: 10.3390/MI14010037
Abstract: Adhesion assessments of an embedded interface in a multilayer system that contains a ductile layer are challenging. The occurrence of plastic deformation in the ductile layer often leads to additional complexity in analysis. In this study, an innovative “push-out” technique was devised to evaluate the interfacial toughness (Gin) of the embedded SiN/GaAs interface in a Au/SiN/GaAs multilayer system. Focus ion beam (FIB) milling was utilized to manufacture the miniaturized specimen and scratching with a conical indenter was used to apply load. This approach effectively minimized plastic deformation in the soft Au layer while inducing tensile stress to the embedded SiN/GaAs interface. As a result, the Au/SiN bilayer detached from the GaAs substrate with little plasticity. The energy associated with the interfacial delamination was derived from analyzing the load–displacement curves obtained from the scratching test. The Gin of the SiN/GaAs interface was calculated by means of energy analysis, and the average Gin was 4.86 ± 0.96 J m−2.
Publisher: Elsevier BV
Date: 2023
Location: Iran (Islamic Republic of)
No related grants have been discovered for Sahar Dehkhoda.