ORCID Profile
0000-0003-1875-9739
Current Organisation
University of New South Wales
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Photodetectors, Optical Sensors and Solar Cells | Electrical and Electronic Engineering | Condensed Matter Physics—Electronic And Magnetic Properties; | Nanotechnology | Optical Properties of Materials | Solid State Chemistry | Inorganic Chemistry | Ceramics | Alloy Materials | Aerospace Materials | Nanomanufacturing | Nanomaterials | Compound Semiconductors | Nanotechnology | Microtechnology | Materials Engineering |
ANZSRC Socio-Economic Objective (SEO)
Other | Solar-Photovoltaic Energy | Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Inorganic industrial chemicals | Solar-photoelectric | Medical instrumentation | Expanding Knowledge in Technology | "Stone, ceramics and clay materials" | Space Transport
Related Links
Publications
GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures
Publisher: IEEE
Date: 06-2014
The environmental impact of lightweight HCPV modules: efficient design and effective deployment
Publisher: Wiley
Date: 13-07-2016
DOI: 10.1002/PIP.2802
Photoluminescence upconversion atGaAs / InGa P
Publisher: American Physical Society (APS)
Date: 09-06-2016
Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi
Publisher: Springer Science and Business Media LLC
Date: 24-04-2018
DOI: 10.1038/S41598-018-24696-2
Abstract: A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented using power and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift in the peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrier localisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to the filling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperature presents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore, a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates the presence of two Gaussian-like distributions making up the density of localised states. These components are attributed to the presence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formation of Bi related point defects, resulting from low temperature growth.
Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP
Publisher: SPIE
Date: 07-03-2014
DOI: 10.1117/12.2041289
Optical DLTS for the study of recombination centers in GaAsN grown by chemical beam epitaxy
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4822195
Dual-junction solar cells with multiple-quantum-well top cells
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4822196
CPV modelling with Solcore: An extensible modelling framework for the rapid computational simulation and evaluation of solar cell designs and concepts
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4822193
Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2EE22167E
Fundamental Efficiency Bounds for the Conversion of a Radiative Heat Engine’s Own Emission into Work
Publisher: American Physical Society (APS)
Date: 06-12-2019
Corrigendum to “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy” [J. Cryst. Growth 483 (2018) 140–146]
Publisher: Elsevier BV
Date: 03-2018
Validation of energy prediction method for a concentrator photovoltaic module in Toyohashi Japan
Publisher: Wiley
Date: 20-06-2012
DOI: 10.1002/PIP.2241
Bridging electromagnetic and carrier transport calculations for three-dimensional modelling of plasmonic solar cells
Publisher: The Optical Society
Date: 30-06-2011
DOI: 10.1364/OE.19.00A888
Optical analysis of light management for finger designs in CPV systems
Publisher: Wiley
Date: 06-05-2022
DOI: 10.1002/PIP.3570
Abstract: Concentrated photovoltaic (CPV) systems can achieve high energy conversion efficiencies due to their use of concentrating optics and highly efficient solar cells however, power losses arising from the front surface reflection and metallization shading typically contribute a significant fraction to the total power loss for these devices. In flat silicon photovoltaic (PV) modules, the front‐metal finger shape is often shaped to minimize shading losses. Finger shape is even more relevant for CPV cells where the current density and front metal shading are much higher. This study compares the optical performance of five light management finger designs in CPV systems with two different refractive homogenizers. The optical efficiency and loss analysis were determined using ray‐tracing simulations. It is shown that shaped, light erting metal fingers can improve the optical efficiency in CPV systems by up to 9.9% absolute compared to rectangular fingers, corresponding to an absolute cell efficiency increase of 3.0%. Although sharp edged triangular finger structures may be challenging to fabricate, significant optical gains can still be achieved with trapezoid or rounded cap finger shapes.
GaAsBi MQWs for multi-junction photovoltaics
Publisher: IEEE
Date: 06-2013
Unveiling microscopic carrier loss mechanisms in 12% efficient Cu2ZnSnSe4 solar cells
Publisher: Research Square Platform LLC
Date: 09-02-2022
DOI: 10.21203/RS.3.RS-1274090/V1
Abstract: Carrier loss mechanisms at microscopic regions is imperative for high-performance polycrystalline inorganic thin-film solar cells. Despite the progress on Kesterite, a promising environmental-benign and earth-abundant thin-film photovoltaic material, the microscopic carrier loss mechanisms and their impact on device performance remain unknown. Herein, we unveil these mechanisms in state-of-the-art Cu 2 ZnSnSe 4 (CZTSe) solar cells using a framework that links microscopic-structural and optoelectronic characterizations with three-dimensional device simulations. The results indicate the CZTSe films have an encouraging intragrain minority carrier lifetime of ns, a marginal radiative recombination loss through sub-band recombination and electrostatic potential fluctuation, whilst a large effective grain boundary recombination velocity of around 10 4 cm s -1 and a low net carrier density of ~1×10 15 cm -3 . We identify that severe grain boundary recombination and low net carrier density are the current limiting factors of device performance. The established framework can greatly advance the research of kesterite and other emerging photovoltaic materials.
Variation in spectral irradiance and the consequences for multi-junction concentrator photovoltaic systems
Publisher: IEEE
Date: 06-2010
Quantum well solar cells
Publisher: Elsevier BV
Date: 04-2002
Interstitial light-trapping design for multi-junction solar cells
Publisher: Elsevier BV
Date: 2017
Development and Field Testing of a Novel Hybrid PV-Thermal Solar Collector
Publisher: International Solar Energy Society
Date: 2018
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
Publisher: Elsevier BV
Date: 02-2018
Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation
Publisher: AIP Publishing
Date: 27-09-2004
DOI: 10.1063/1.1794371
Abstract: Radiation-induced majority carrier removal is investigated from n+∕p− lattice-mismatched In0.56Ga0.44P solar cells under 1-MeV-electron irradiation. The change in carrier concentration in the 1×1017cm−3p− base layer is determined using standard capacitance–voltage techniques and found to proceed at a rate Rc=1.3cm−1, in agreement with that observed in lattice-matched InGaP. However, the observation of an increased short-circuit current and short-wavelength quantum efficiency over the unirradiated values at electron fluence levels in excess of 3×1015cm−2, allows the carrier concentration from the n+ emitter layer to be measured. By modeling the quantum efficiency of these solar cells, it is shown that the main photoresponse from these lattice-mismatched solar cells is due to drift transport, making the spectral response highly sensitive to changes in the width of the depletion region. Using this technique, the carrier concentration in the 2×1018cm−3 n+ emitter layer is found to be reduced to 1×1018cm−3 after exposure to an electron fluence of 3×1015cm−2.
Quantum Well Solar Cells and Quantum Dot Concentrators
Publisher: Elsevier
Date: 2006
Photoluminescence-Based Current–Voltage Characterization of Individual Subcells in Multijunction Devices
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2016
A feasibility study of solar PV‐powered electric cars using an interdisciplinary modeling approach for the electricity balance, CO2 emissions, and economic aspects: The cases of The Netherl
Publisher: Wiley
Date: 14-11-2019
DOI: 10.1002/PIP.3202
Solar cells with a multi-functional plasmonic light concentration layer
Publisher: IEEE
Date: 06-2011
Fundamental losses in solar cells
Publisher: Wiley
Date: 26-08-2010
DOI: 10.1002/PIP.1024
Thermoradiative Power Conversion from HgCdtTe Photodiodes and Their Current–Voltage Characteristics
Publisher: American Chemical Society (ACS)
Date: 09-05-2022
Hot carrier dynamics in InGaAs/GaAsP quantum well solar cells
Publisher: IEEE
Date: 06-2011
Organic upconverters embedded in a Bragg structure
Publisher: SPIE
Date: 15-05-2014
DOI: 10.1117/12.2052286
Strain-balanced GaAsP/InGaAs quantum well solar cells
Publisher: AIP Publishing
Date: 27-12-1999
DOI: 10.1063/1.125580
Abstract: A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on a GaAs substrate and equals a good GaAs cell in terms of power conversion efficiency. The cell design is presented together with measurements of the forward bias dark current density, quantum efficiency, and 3000 K light-IV response. Cell efficiencies under standard air mass (AM) 1.5 and AM 0 illumination are projected from experimental data and the suitability of this cell for enhancing GaInP/GaAs tandem cell efficiencies is discussed.
Kinetic analysis of photochemical upconversion by triplet-triplet annihilation: Beyond any spin statistical limit
Publisher: American Chemical Society (ACS)
Date: 25-05-2010
DOI: 10.1021/JZ100566U
III–V plasmonic solar cells: Targeting absorption enhancements close to the GaAs band edge
Publisher: IEEE
Date: 05-2011
Relay dye boosts efficiency
Publisher: Springer Science and Business Media LLC
Date: 07-2009
Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes
Publisher: Springer Science and Business Media LLC
Date: 07-10-2013
DOI: 10.1038/SREP02874
Abstract: We illustrate the important trade-off between far-field scattering effects, which have the potential to provide increased optical path length over broad bands and parasitic absorption due to the excitation of localized surface plasmon resonances in metal nanoparticle arrays. Via detailed comparison of photocurrent enhancements given by Au, Ag and Al nanostructures on thin-film GaAs devices we reveal that parasitic losses can be mitigated through a careful choice of scattering medium. Absorption at the plasmon resonance in Au and Ag structures occurs in the visible spectrum, impairing device performance. In contrast, exploiting Al nanoparticle arrays results in a blue shift of the resonance, enabling the first demonstration of truly broadband plasmon enhanced photocurrent and a 22% integrated efficiency enhancement.
Optical and Thermal Emission Benefits of Differently Textured Glass for Photovoltaic Modules
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2021
Strain-balanced quantum well solar cells
Publisher: Elsevier BV
Date: 04-2002
Electrical and optical properties of radiation-induced dominant recombination center in
Publisher:
American Physical Society (APS)
Date:
21-10-2005
Publisher: American Physical Society (APS)
Date: 21-10-2005
Loss analysis for single junction concentrator solar cells
Publisher: Author(s)
Date: 2018
DOI: 10.1063/1.5053511
Characterization of SiGeSn for Use as a 1 eV Sub-Cell in Multi-Junction Solar Cells
Publisher: IEEE
Date: 06-2018
A molecular approach to the intermediate band solar cell: The symmetric case
Publisher: AIP Publishing
Date: 11-08-2008
DOI: 10.1063/1.2970157
Abstract: Molecular materials may overcome some of the difficulties for making an intermediate band solar cell by storing energy in long-lived triplet states. Both the problems of fast nonradiative interband relaxation and selective photon absorption can be solved by this approach. A practical implementation of the molecular intermediate band solar cell is considered with a symmetric band alignment, resting on a proven triplet-triplet annihilation process. The limiting power conversion efficiency for this system exceeds that of a single bandgap device over a broad range, peaking at 40.6% for 1.9eV under 1 sun illumination.
On the efficiency limit of triplet-triplet annihilation for photochemical upconversion
Publisher: Royal Society of Chemistry (RSC)
Date: 2010
DOI: 10.1039/B913243K
Abstract: Photochemical upconversion is performed, whereby emitter triplet states are produced through triplet energy transfer from sensitizer molecules excited with low energy photons. The triplet emitter molecules undergo triplet-triplet annihilation to yield excited singlet states which emit upconverted fluorescence. Experiments comparing the 560 nm prompt fluorescence when rubrene emitter molecules are excited directly, using 525 nm laser pulses, to the delayed, upconverted fluorescence when the porphyrin sensitizer molecules are excited with 670 nm laser pulses reveal annihilation efficiencies to produce excited singlet emitters in excess of 20%. Conservative measurements reveal a 25% annihilation efficiency, while a direct comparison between the prompt and delayed fluorescence yield suggests a value as high as 33%. Due to fluorescence quenching, the photon upconversion efficiencies are lower, at 16%.
Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells
Publisher: IEEE
Date: 2006
Enhanced Optical Absorption in an Ultra-thin Textured Solar Cell Using Nanosphere Natural Photolithography
Publisher: IEEE
Date: 06-2018
Controlling radiative loss in quantum well solar cells
Publisher: IOP Publishing
Date: 11-06-2013
The purpose of a photon ratchet in intermediate band solar cells
Publisher: IEEE
Date: 06-2016
Impact of individual atmospheric parameters on CPV system power, energy yield and cost of energy
Publisher: Wiley
Date: 27-05-2013
DOI: 10.1002/PIP.2376
Brighten the dark skies
Publisher: Springer Science and Business Media LLC
Date: 15-07-2019
Evaluation of InGaP/In<inf>0.01</inf>GaAs/Ge concentrator system annual energy yield and comparison to estimates based on reference spectra.
Publisher: IEEE
Date: 05-2008
Multi-junction solar cells paving the way for super high-efficiency
Publisher: AIP Publishing
Date: 23-06-2021
DOI: 10.1063/5.0048653
Abstract: In order to realize a clean energy society by using renewable energies, high-performance solar cells are a very attractive proposition. The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. As state-of-the-art of single-junction solar cells are approaching the Shockley–Queisser limit of 32%–33%, an important strategy to raise the efficiency of solar cells further is stacking solar cell materials with different bandgaps to absorb different colors of the solar spectrum. The III–V semiconductor materials provide a relatively convenient system for fabricating multi-junction solar cells providing semiconductor materials that effectively span the solar spectrum as demonstrated by world record efficiencies (39.2% under one-sun and 47.1% under concentration) for six-junction solar cells. This success has inspired attempts to achieve the same with other materials like perovskites for which lower manufacturing costs may be achieved. Recently, Si multi-junction solar cells such as III–V/Si, II–VI/Si, chalcopyrite/Si, and perovskite/Si have become popular and are getting closer to economic competitiveness. Here, we discuss the perspectives of multi-junction solar cells from the viewpoint of efficiency and low-cost potential based on scientific and technological arguments and possible market applications. In addition, this article provides a brief overview of recent developments with respect to III–V multi-junction solar cells, III–V/Si, II–VI/Si, perovskite/Si tandem solar cells, and some new ideas including so-called 3rd generation concepts.
Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
Publisher: IOP Publishing
Date: 04-07-2017
Voltage Matching, Étendue, and Ratchet Steps in Advanced-Concept Solar Cells
Publisher: American Physical Society (APS)
Date: 24-10-2019
Photon ratchet intermediate band solar cells
Publisher: AIP Publishing
Date: 25-06-2012
DOI: 10.1063/1.4731277
Abstract: In this paper, we propose an innovative concept for solar power conversion—the “photon ratchet” intermediate band solar cell (IBSC)—which may increase the photovoltaic energy conversion efficiency of IBSCs by increasing the lifetime of charge carriers in the intermediate state. The limiting efficiency calculation for this concept shows that the efficiency can be increased by introducing a fast thermal transition of carriers into a non-emissive state. At 1 sun, the introduction of a “ratchet band” results in an increase of efficiency from 46.8% to 48.5%, due to suppression of entropy generation.
The Role of Etendue and Ratchets in Spectral Conversion and Multi-color Emission
Publisher: OSA
Date: 2019
Design of an intermediate Bragg reflector within triple-junction solar cells for spectrum splitting applications
Publisher: Elsevier BV
Date: 05-2019
Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
Publisher: Elsevier BV
Date: 12-2017
Optical Analysis of Secondary Optics for Solar Concentrators with a View to Optimising Cell Metallisation
Publisher: IEEE
Date: 20-06-2021
A metallic hot-carrier photovoltaic device
Publisher: IOP Publishing
Date: 05-2019
Molecular approaches to third generation photovoltaics: Photochemical up-conversion
Publisher: SPIE
Date: 19-08-2010
DOI: 10.1117/12.862739
Analysis for Radiation-Resistance of InGaP and GaAs Sub-Cells for InGaP/GaAs/Ge 3-Junction Solar Cells
Publisher: IEEE
Date: 2006
Advances in Bragg stack quantum well solar cells
Publisher: Elsevier BV
Date: 05-2005
Photochemical upconversion enhanced solar cells: Effect of a back reflector
Publisher: CSIRO Publishing
Date: 2012
DOI: 10.1071/CH12117
Abstract: Photochemical upconversion is applied to a hydrogenated amorphous silicon solar cell in the presence of a back-scattering layer. A custom-synthesized porphyrin was utilized as the sensitizer species, with rubrene as the emitter. Under a bias of 24 suns, a peak external quantum efficiency (EQE) enhancement of ~2 % was observed at a wavelength of 720 nm. Without the scattering layer, the EQE enhancement was half this value, indicating that the effect of the back-scatterer is to double the efficacy of the upconverting device. The results represent an upconversion figure of merit of 3.5 × 10–4 mA cm–2 sun–2, which is the highest reported to date.
A comprehensive experimental characterisation of a novel porous media combustion-based thermophotovoltaic system with controlled emission
Publisher: Elsevier BV
Date: 11-2019
Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2019
DLTS: A Promising Technique for the Identification of the Recombination and Compensator Centers in Solar Cell Materials
Publisher: IEEE
Date: 2006
Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
Publisher: IOP Publishing
Date: 2017
Improving the performance of thermophotovoltaics using stabilized porous media combustion
Publisher: IEEE
Date: 06-2018
Multi‐dimensional modeling of solar cells with electromagnetic and carrier transport calculations
Publisher: Wiley
Date: 02-02-2012
DOI: 10.1002/PIP.2159
Recent results for single‐junction and tandem quantum well solar cells
Publisher: Wiley
Date: 19-01-2011
DOI: 10.1002/PIP.1069
Assessing the operating temperature of multi-junction solar cells with novel rear side layer stack and local electrical contacts
Publisher: Elsevier BV
Date: 09-2019
Diffractive Interference Design Using Front and Rear Surface Metal and Dielectric Nanoparticle Arrays for Photocurrent Enhancement in Thin Crystalline Silicon Solar Cells
Publisher: American Chemical Society (ACS)
Date: 09-09-2014
DOI: 10.1021/PH5001567
Numerical flowline concentrator design in 3D
Publisher: SPIE
Date: 09-09-2019
DOI: 10.1117/12.2526849
Routes to high efficiency photovoltaic power conversion
Publisher: IEEE
Date: 06-2013
Enhanced Hot-Carrier Effects in InAlAs/InGaAs Quantum Wells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Multijunction Solar Cells With Graded Buffer Bragg Reflectors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2018
Radiation resistance of GaAs solar cells and hot carriers
Publisher: Elsevier BV
Date: 09-2011
Comparative cathodoluminescence and EBIC analysis of partially relaxed InGaAs/GaAs p-i-n structures
Publisher: CRC Press
Date: 18-01-2018
Photovoltaic Device Operation at Low Temperature
Publisher: IEEE
Date: 2006
Design of photonic light-trapping structures for ultra-thin solar cells
Publisher: SPIE
Date: 03-03-2020
DOI: 10.1117/12.2550136
Interstitial Light Trapping and Optical Confinement in Multijunction Solar Cells
Publisher: IEEE
Date: 06-2019
Al nanoparticle arrays for broadband absorption enhancements in GaAs devices
Publisher: IEEE
Date: 06-2013
Quantifying Parasitic Losses From Metal Scattering Structures in Solar Cells: How Uncertainty in Optical Constants Affects Simulation Results
Publisher: IEEE
Date: 06-2018
Improving the radiation hardness of space solar cells via nanophotonic light trapping
Publisher: IEEE
Date: 06-2016
InAs/GaAs quantum dot solar cell with an AlAs cap layer
Publisher: AIP Publishing
Date: 22-04-2013
DOI: 10.1063/1.4803459
Abstract: We report the effects of the deposition of an AlAs cap layer (CL) over InAs quantum dots (QDs) on the performance of QD solar cells (QDSCs). The growth of AlAs CL over InAs QDs led to the elimination of the wetting layer absorption and hence the enhancement of the open-current voltage, Voc, of a 20-layer InAs/GaAs QDSC from 0.69 V to 0.79 V. Despite a slight reduction in short-circuit current, Jsc, for the QDSC with AlAs CL, the enhancement of the Voc is enough to ensure that its efficiency is higher than the QDSC without AlAs CL.
Recent results on quantum well solar cells
Publisher: Springer Science and Business Media LLC
Date: 2000
Comparison of possible realizations of quantum ratchet intermediate band solar cells
Publisher: IEEE
Date: 06-2018
Organic photovoltaic greenhouses: a unique application for semi-transparent PV?
Publisher: Royal Society of Chemistry (RSC)
Date: 2015
DOI: 10.1039/C4EE03132F
Abstract: Organic photovoltaics are analysed for use within a photovoltaic greenhouse for combined crop growth and electricity production.
InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells
Publisher: AIP Publishing
Date: 25-08-2014
DOI: 10.1063/1.4894424
Abstract: Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.
Split InAlAs top cell enabled four-junction solar cell lattice matched to InP
Publisher: IEEE
Date: 06-2016
Entropically Driven Photochemical Upconversion
Publisher: American Chemical Society (ACS)
Date: 25-01-2011
DOI: 10.1021/JP108839G
Abstract: Conventional photochemical upconversion (UC) through homo-geneous triplet-triplet annihilation (TTA) is subject to several enthalpic losses that limit the UC margin. Here, we address one of these losses: the triplet energy transfer (TET) from the sensitizer to the emitter molecules. Usually, the triplet energy level of the emitter is set below that of the sensitizer. In our system, the triplet energy level of the emitter exceeds that of the sensitizer by ∼600 cm(-1). Choosing suitable concentrations for the sensitizer and emitter molecules, we can exploit entropy as a driving force for the migration of triplet excitation from the sensitizer to the emitter manifolds. Thereby we obtain a new record for the peak-to-peak TTA-UC energy margin of 0.94 eV. A modified Stern-Volmer analysis yields a TET rate constant of 2.0 × 10(7) M(-1) s(-1). Despite being relatively inefficient, the upconverted fluorescence is easily visible to the naked eye with irradiation intensities as low as 2 W cm(-2).
Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure
Publisher: IOP Publishing
Date: 24-05-2016
Native and radiation induced defects in lattice mismatched InGaAs and InGaP
Publisher: IEEE
Date: 2005
Thermal emissivity of silicon heterojunction solar cells
Publisher: Elsevier BV
Date: 10-2019
A metallic hot carrier photovoltaic cell
Publisher: SPIE
Date: 16-03-2015
DOI: 10.1117/12.2077573
Experimental and theoretical study of the infrared emissivity of crystalline silicon solar cells
Publisher: IEEE
Date: 06-2017
Designing with Luminescent Solar Concentrator Photovoltaics
Publisher: IEEE
Date: 06-2019
Drift-diffusion modeling of InP-based triple junction solar cells
Publisher: SPIE
Date: 25-03-2013
DOI: 10.1117/12.2005332
ITO and AZO films for low emissivity coatings in hybrid photovoltaic-thermal applications
Publisher: Elsevier BV
Date: 10-2017
Editorial for ‘special issue on advanced solar cell technology’
Publisher: IOP Publishing
Date: 16-11-2017
Experimental measurement of restricted radiative emission in quantum well solar cells
Publisher: IEEE
Date: 06-2010
Photovoltaic efficiency enhancement through thermal up-conversion
Publisher: AIP Publishing
Date: 18-03-2003
DOI: 10.1063/1.1561159
Abstract: Anti-Stokes emission is observed experimentally from a series of quantum well p–i–n structures and is attributed to a quasithermal equilibrium being established between the quantum well and barrier material. A device is described whereby the anti-Stokes emission from a quantum well p–i–n structure can be used to increase the short-circuit current of a second conventional solar cell, essentially coupling sub-band-gap sunlight to the ambient thermal reservoir. For a GaAs p/n cell at 300 K, this effect is calculated to raise the one-sun power conversion efficiency from 30.0% to 31.3%. Greater efficiency increases are possible if a thermal gradient is established across the structure.
Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration
Publisher: Wiley
Date: 11-04-2015
DOI: 10.1002/PIP.2615
Syracuse - a multi-junction concentrator system computer model
Publisher: IEEE
Date: 2005
Optimal Bandgap Combinations—Does Material Quality Matter?
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2012
Photoelectrochemical water splitting using strain-balanced multiple quantum well photovoltaic cells
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9SE00276F
Abstract: Strain-balanced GaInAs/GaAsP quantum wells were incorporated into the classical GaInP/GaAs tandem photoelectrochemical water splitting device to increase the range of photon absorption and achieve higher solar-to-hydrogen efficiencies.
Quantifying the impact of individual atmospheric parameters on CPV system power and energy yield
Publisher: IEEE
Date: 06-2012
3J solar cells comprising a lattice matched epitaxial SiGeSn subcell
Publisher: IEEE
Date: 06-2016
Fundamental Aspects of Hot Carrier Solar Cell Operation
Publisher: IEEE
Date: 14-06-2020
Comparative Study of Annealed and High Temperature Grown ITO and AZO Films for Solar Energy Applications
Publisher: Springer Science and Business Media LLC
Date: 19-06-2017
DOI: 10.1557/ADV.2017.448
Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb
Publisher: IEEE
Date: 06-2011
Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell
Publisher: AIP Publishing
Date: 09-06-2014
DOI: 10.1063/1.4883648
Abstract: An unambiguous observation of hot-carrier photocurrent from an InGaAs single quantum well solar cell is reported. Simultaneous photo-current and photoluminescence measurements were performed for incident power density 0.04–3 kW cm−2, lattice temperature 10 K, and forward bias 1.2 V. An order of magnitude photocurrent increase was observed for non-equilibrium hot-carrier temperatures & K. This photocurrent activation temperature is consistent with that of equilibrium carriers in a lattice at elevated temperature. The observed hot-carrier photo-current is extracted from the well over an energy selective GaAs barrier, thus integrating two essential components of a hot-carrier solar cell: a hot-carrier absorber and an energy selective contact.
The importance of accurate determination of optical constants for the design of nanometallic light-trapping structures
Publisher: Elsevier BV
Date: 03-2019
Competition between the Charge Transfer State and the Singlet States of Donor or Acceptor Limiting the Efficiency in Polymer:Fullerene Solar Cells
Publisher: American Chemical Society (ACS)
Date: 16-12-2011
DOI: 10.1021/JA210029W
Abstract: We study the appearance and energy of the charge transfer (CT) state using measurements of electroluminescence (EL) and photoluminescence (PL) in blend films of high-performance polymers with fullerene acceptors. EL spectroscopy provides a direct probe of the energy of the interfacial states without the need to rely on the LUMO and HOMO energies as estimated in pristine materials. For each polymer, we use different fullerenes with varying LUMO levels as electron acceptors, in order to vary the energy of the CT state relative to the blend with [6,6]-phenyl C61-butyric acid methyl ester (PCBM). As the energy of the CT state emission approaches the absorption onset of the blend component with the smaller optical bandgap, E(opt,min) ≡ min{E(opt,donor) E(opt,acceptor)}, we observe a transition in the EL spectrum from CT emission to singlet emission from the component with the smaller bandgap. The appearance of component singlet emission coincides with reduced photocurrent and fill factor. We conclude that the open circuit voltage V(OC) is limited by the smaller bandgap of the two blend components. From the losses of the studied materials, we derive an empirical limit for the open circuit voltage: V(OC) ≲ E(opt,min)/e - (0.66 ± 0.08)eV.
Solar Cell Efficiency Enhancement and Revised Shockley-Queisser Limit for Low Dimensional Absorbers
Publisher: Materials Research Society
Date: 2008
Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport
Publisher: Wiley
Date: 24-03-2016
DOI: 10.1002/PIP.2769
Cd-Free Cu2ZnSnS4solar cell with an efficiency greater than 10% enabled by Al2O3passivation layers
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9EE01726G
Abstract: Cd-Free CZTS solar cell with above 10% efficiency was achieved by an Al 2 O 3 passivation layer prepared by ALD.
Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2017
Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications
Publisher: IEEE
Date: 06-2016
Formation Mechanism of Cu-based Ohmic Contacts for GaAs Solar Cells
Publisher: IEEE
Date: 14-06-2020
Dynamic carbon mitigation analysis: the role of thin-film photovoltaics
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4EE00646A
Abstract: We assess the net carbon emissions during a transition to photovoltaic power generation, comparing established and emerging thin-film PV technologies.
Single and multi-junction solar cells utilizing a 1.0 eV SiGeSn junction
Publisher: Author(s)
Date: 2016
DOI: 10.1063/1.4962096
Quantum wells for high-efficiency photovoltaics
Publisher: SPIE
Date: 14-03-2016
DOI: 10.1117/12.2217590
Systematic testing of hybrid PV-thermal (PVT) solar collectors in steady-state and dynamic outdoor conditions
Publisher: Elsevier BV
Date: 04-2019
Mid-infrared emissivity of crystalline silicon solar cells
Publisher: Elsevier BV
Date: 2018
Thinking Beyond Limiting Efficiencies Of Advanced Concepts: Design Rules And Material Requirements For Realistic Devices
Publisher: IEEE
Date: 06-2019
QUANTUM WELL SOLAR CELLS
Publisher: IMPERIAL COLLEGE PRESS
Date: 16-10-2014
Performance enhancement from radiative coupling considering realistic spectral conditions for optimal and sub-optimal bandgap multijunction solar cells
Publisher: IEEE
Date: 06-2014
Current voltage characteristics of a metallic structure for a hot-carrier photovoltaic cell
Publisher: IEEE
Date: 06-2016
Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells
Publisher: Elsevier BV
Date: 04-2006
Influence of energetic disorder on electroluminescence emission in polymer:fullerene solar cells
Publisher: American Physical Society (APS)
Date: 18-07-2012
Limiting efficiencies for intermediate band solar cells with partial absorptivity: the case for a quantum ratchet
Publisher: Wiley
Date: 10-02-2016
DOI: 10.1002/PIP.2751
SPICE Modelling of Photoluminescence and Electroluminescence Based Current-Voltage Curves of Solar Cells for Concentration Applications
Publisher: River Publishers
Date: 2016
Extensible modelling framework for nanostructured III-V solar cells
Publisher: IEEE
Date: 06-2011
Nanoparticle scattering for radiation-hard multi-junction space solar cells
Publisher: IEEE
Date: 06-2015
Observation of suppressed radiative recombination in single quantum well p-i-n photodiodes
Publisher: AIP Publishing
Date: 15-12-1997
DOI: 10.1063/1.366510
Abstract: We have measured electroluminescence (EL) spectra of GaAs/InGaAs and AlGaAs/GaAs single quantum well (QW) p-i-n photodiodes at temperatures between 200 and 300 K and forward biases close to the open circuit voltage. Integrated EL spectra vary like eqV/nkT with an ideality factor n=1.05±0.05 over five decades, indicating purely radiative processes. The spectra are calibrated into absolute units enabling comparison to be made with the predictions of a theoretical model. For each temperature and bias we calculate the EL spectrum and radiative current expected in the detailed balance limit, integrating the theoretical emission spectrum over the surface of the device, in order to establish the quasi-Fermi potential separation, Δφf, in the QW and, where possible, in the host material. For the GaAs/InGaAs cell we are able to model emission from the QW and the host material simultaneously. We find that, in all cases, the QW emission is overestimated by theory if it is assumed that Δφf=V. QW emission corresponds instead to a value of Δφf which a few tens of mV less than V. In contrast, emission from the host material, where visible, is well fitted by the model with Δφf=V at all biases and temperatures. We attribute the variation in Δφf to irreversible thermally assisted escape from the QWs.
Multi-junction III–V solar cells: current status and future potential
Publisher: Elsevier BV
Date: 07-2005
Microscopic reversibility demands lower open circuit voltage in multiple exciton generation solar cells
Publisher: AIP Publishing
Date: 12-04-2021
DOI: 10.1063/5.0049120
Abstract: Multiple exciton generation (MEG) increases the short circuit current of solar cells and is, therefore, often cited as a candidate scheme for surpassing the efficiency limit of single junction solar cells. Conventionally, limiting efficiencies for MEG solar cells have been calculated using quasi-equilibrium models that implicitly assume an effective separation of timescales between different processes. We show here that this separation of timescales is not possible for MEG solar cells, with Auger recombination, the inverse process to multi-exciton generation, needing to be considered explicitly in the efficiency limits of an MEG solar cell. We assess the impact of Auger recombination using a non-equilibrium model of a quantum dot solar cell that satisfies microscopic reversibility and can approximate experimental external quantum efficiency (EQE) curves of MEG solar cells. Recombination—both Auger and radiative—is treated in a quasi-equilibrium approach, which can be justified with a clear model for the separation of timescales. A key insight of this model is that the achievable voltage of the device, and hence the solar energy conversion efficiency, depends on the absolute values of the impact ionization rate and the rate at which electrons lose energy through phonon scattering. By contrast, the EQE profile at short circuit depends only on the ratio of these two rates. This shows that the potential of certain MEG solar cell approaches cannot be assessed from EQE improvements alone, which highlights the importance of considering non-equilibrium processes in models of solar energy conversion devices.
Hot Carriers in Quantum Wells for Photovoltaic Efficiency Enhancement
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
What are the greatest opportunities for PV to contribute to rural development?
Publisher: Elsevier BV
Date: 09-2017
Elements of modelling and design of multi-quantum well solar cells
Publisher: IEEE
Date: 06-2014
Generating Power at Night Using a Thermoradiative Diode, How is this Possible?
Publisher: IEEE
Date: 14-06-2020
Singlet and Triplet Exciton Dynamics of Violanthrone
Publisher: American Chemical Society (ACS)
Date: 06-10-2021
Modeling and analysis of multijunction solar cells
Publisher: SPIE
Date: 10-02-2011
DOI: 10.1117/12.875757
Experimental demonstration of energy-transfer ratchet intermediate-band solar cell
Publisher: Springer Science and Business Media LLC
Date: 03-2021
DOI: 10.1038/S42005-021-00543-1
Abstract: A detailed balance calculation reveals an extremely high efficiency of 63.2% for intermediate-band solar cells (IBSCs) under maximum sunlight concentration. However, an actual IBSC device with an efficiency larger than the Shockley-Queisser (SQ) limit has so far not been reported. The main difficulties lie in realizing an efficient sequential two-photon absorption (STPA) which requires a sufficiently long lifetime intermediate state or intermediate band. In this article, we propose the concept of a ratchet type IBSC, utilizing a long lifetime of rare-earth ion luminescence centers in Erbium-doped GaAs. The temperature dependent differential external quantum efficiency reveals a significant STPA contribution originating from the Er 3+ luminescence center. All the results were modeled and interpreted by integrating the ratchet effect with up-conversion along with a density functional theory (DFT) simulation. Our work demonstrates that the long lifetime energy-transfer mechanism in Er 3+ centers contributes directly to the formation of a ratchet type IB.
Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells
Publisher: AIP Publishing
Date: 11-2005
DOI: 10.1063/1.2115095
Abstract: Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1cm−1, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (Eν+0.90±0.05eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39cm−1, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1cm−1, in p-AlInGaP. From the minority-carrier injection annealing (100mA∕cm2), the annealing activation energy of H2 defect is ΔE=0.60eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (Vp-Pi). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.
Comparison of efficiency measurements for a HCPV module with 3J cells in 3 sites
Publisher: IEEE
Date: 2005
The efficiency limit of solar cells with molecular absorbers: A master equation approach
Publisher: AIP Publishing
Date: 15-12-2010
DOI: 10.1063/1.3517826
Abstract: A master equation approach to the limiting efficiencies of solar cells with molecular absorbers is presented. A number of model absorbers are analyzed that possess identical absorption spectra, but with differing numbers of electronic excited states. The Shockley–Queisser limit is reproduced for a molecule resembling a semiconductor, with an infinity of electronic levels in the excited state manifold. However, when only a few electronic states contribute to the absorption spectrum, the limiting efficiency is reduced. In the extreme case, where only a single electronic excited state participates in the absorption spectrum, the efficiency limit is 28.9%. At high energy thresholds, built-in thermal up-conversion results in solar cells with efficiencies exceeding the Shockley–Queisser curve. The analysis is applicable to any single threshold photovoltaic device, including those based on semiconductor, polymer, and small molecule absorbers.
Time-resolved photoluminescence of MBE-grown 1 eV GaAsSbN for multi-junction solar cells
Publisher: IEEE
Date: 06-2015
What does CPV need to achieve in order to succeed?
Publisher: Author(s)
Date: 2016
DOI: 10.1063/1.4962072
Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment
Publisher: Springer Science and Business Media LLC
Date: 23-07-2018
Energy Conversion Efficiency of the Bulk Photovoltaic Effect
Publisher: American Physical Society (APS)
Date: 16-03-2023
Efficient up-conversion by triplet-triplet annihilation
Publisher: IOP Publishing
Date: 09-2009
A hot-carrier solar cell with optical energy selective contacts
Publisher: AIP Publishing
Date: 12-09-2011
DOI: 10.1063/1.3636401
Abstract: The hot-carrier solar cell (HC-SC) is an ambitious approach to solar energy conversion which in principle can achieve high efficiency (84%) from a single bandgap semiconductor. Here we propose a method of utilising hot-carriers within a photovoltaic device in which energy is extracted optically from a hot-carrier distribution rather than through the usual approach of electrical conduction. Depending on the optical extraction rate, the concept proposed here may attain an upper efficiency approaching that of the conventional HC-SC.
In-situ, long-term operational stability of organic photovoltaics for off-grid applications in Africa
Publisher: Elsevier BV
Date: 05-2016
GaAsBi: An alternative to InGaAs based multiple quantum well photovoltaics
Publisher: IEEE
Date: 06-2016
Kinetic insight into bimolecular upconversion: experiment and simulation
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C3RA46953K
Abstract: Direct observation of triplet energy transfer from sensitiser to emitter is modelled and provides comprehensive description of bimolecular upconversion.
Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2012
Plasmonic nanostructures for absorption enhancements close to the GaAs band edge
Publisher: IEEE
Date: 06-2011
Two-photon triplet-triplet annihilation upconversion for photovoltaics
Publisher: IEEE
Date: 06-2011
Effect of well number on the performance of quantum-well solar cells
Publisher: AIP Publishing
Date: 15-06-2005
DOI: 10.1063/1.1946908
Abstract: The effect of increasing the number of quantum wells in a strain-compensated, multiquantum-well solar cell is investigated. It is found that as the well number is increased, dark current level close to the operating point rises linearly. Short-circuit current in the AM0 spectrum also rises linearly with the inclusion of more quantum wells. This allows the cell to maintain a constant open-circuit voltage irrespective of the number of wells grown. This is anticipated to have advantages when the cell is used as a replacement for the GaAs junction in the existing generation of tandem and triple-junction cells since current levels can be matched to the upper junction without detriment to the voltage performance. This result allows us to predict a tandem cell AM0 efficiency of 23.8% based on the 50-well cell.
Improving the light-harvesting of amorphous silicon solar cells with photochemical upconversion
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2EE21136J
Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics
Publisher: AIP Publishing
Date: 29-11-2004
DOI: 10.1063/1.1829136
Abstract: We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04eV) and thick (2μm) p-AlInGaP diodes and solar cells structures before and after 1MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (EV+0.37±0.05eV) and two electron-emitting traps, E1 (EC−0.22±0.04eV) and E3 (EC−0.78±0.05eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.
High efficiency photovoltaics: recent progress and long term goals
Publisher: OSA
Date: 2011
Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells
Publisher: IEEE
Date: 05-2006
Achievement of 27% efficient and 200Wp concentrator module and the technological roadmap toward realization of more than 31% efficient modules
Publisher: Elsevier BV
Date: 11-2006
Development of concentrator modules with dome-shaped Fresnel lenses and triple-junction concentrator cells
Publisher: Wiley
Date: 2005
DOI: 10.1002/PIP.643
Quantum wells in concentrator solar cells
Publisher: SPIE-Intl Soc Optical Eng
Date: 2008
Towards high efficiency multi-junction solar cells grown on InP Substrates
Publisher: IEEE
Date: 06-2013
Higher limiting efficiencies for nanostructured solar cells
Publisher: SPIE
Date: 11-02-2010
DOI: 10.1117/12.844114
Packaging III–V tandem solar cells for practical terrestrial applications achievable to 27% of module efficiency by conventional machine assemble technology
Publisher: Elsevier BV
Date: 11-2006
The potential for concentrator photovoltaics: A feasibility study in India
Publisher: Wiley
Date: 26-12-2018
DOI: 10.1002/PIP.3099
Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
Publisher: IOP Publishing
Date: 22-06-2015
1MeV electron irradiation influence on GaAs solar cell performance
Publisher: Elsevier BV
Date: 11-2008
Quantifying intrinsic loss mechanisms in solar cells: Why is power efficiency fundamentally limited?
Publisher: SPIE
Date: 19-08-2010
DOI: 10.1117/12.860681
Analytical Expressions for the Efficiency Limits of Radiatively Coupled Tandem Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2019
Issues in the physical measurement of the intermediate band effect
Publisher: IEEE
Date: 06-2012
Quantum Cascade Photon Ratchets for Intermediate-Band Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2016
Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells
Publisher: Elsevier BV
Date: 02-2005
InGaAs/GaAsP quantum wells for hot carrier solar cells
Publisher: SPIE
Date: 09-02-2012
DOI: 10.1117/12.910581
Demonstrating Dilute-Tin Alloy SiGeSn for Use in Multijunction Photovoltaics: Single- and Multijunction Solar Cells With a 1.0-eV SiGeSn Junction
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2016
Singlet fission and tandem solar cells reduce thermal degradation and enhance lifespan
Publisher: Wiley
Date: 05-05-2021
DOI: 10.1002/PIP.3405
Abstract: The economic value of a photovoltaic installation depends upon both its lifespan and power conversion efficiency. Progress toward the latter includes mechanisms to circumvent the Shockley‐Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG‐enhanced silicon cell architectures result in lower cell operating temperatures, increasing the device lifetime compared to standard c‐Si cells. Also demonstrated are further advantages from MEG enhanced silicon cells: (i) the device architecture can completely circumvent the need for current‐matching and (ii) upon degradation, tetracene, a candidate singlet fission (a form of MEG) material, is transparent to the solar spectrum. The combination of (i) and (ii) mean that the primary silicon device will continue to operate with reasonable efficiency even if the singlet fission layer degrades. The lifespan advantages of singlet fission enhanced silicon cells, from a module perspective, are compared favorably alongside the highly regarded perovskite/silicon tandem and conventional c‐Si modules.
A new approach to modelling quantum dot concentrators
Publisher: Elsevier BV
Date: 02-2003
Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells
Publisher: Elsevier BV
Date: 04-2001
Practical Limits of Multijunction Solar Cell Performance Enhancement From Radiative Coupling Considering Realistic Spectral Conditions
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2014
Nanoparticle Scattering for Multijunction Solar Cells: The Tradeoff Between Absorption Enhancement and Transmission Loss
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2016
32.9% efficient tandem solar cell with strain-balanced GaInAs/GaAsP quantum wells
Publisher: IEEE
Date: 20-06-2021
InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications
Publisher: Elsevier BV
Date: 04-2002
Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications
Publisher: Elsevier BV
Date: 2003
Semiconductor nanostructure quantum ratchet for high efficiency solar cells
Publisher: Springer Science and Business Media LLC
Date: 08-03-2018
DOI: 10.1038/S42005-018-0007-6
Abstract: Conventional solar cell efficiencies are capped by the ~31% Shockley–Queisser limit because, even with an optimally chosen bandgap, some red photons will go unabsorbed and the excess energy of the blue photons is wasted as heat. Here we demonstrate a “quantum ratchet” device that avoids this limitation by inserting a pair of linked states that form a metastable photoelectron trap in the bandgap. It is designed both to reduce non-radiative recombination, and to break the Shockley–Queisser limit by introducing an additional “sequential two photon absorption” (STPA) excitation channel across the bandgap. We realise the quantum ratchet concept with a semiconductor nanostructure. It raises the electron lifetime in the metastable trap by ~10 4 , and gives a STPA channel that increases the photocurrent by a factor of ~50%. This result illustrates a new paradigm for designing ultra-efficient photovoltaic devices.
Improving the radiation hardness of space solar cells via nanophotonic light trapping
Publisher: IEEE
Date: 06-2017
Dynamic coupled thermal-and-electrical modelling of sheet-and-tube hybrid photovoltaic/thermal (PVT) collectors
Publisher: Elsevier BV
Date: 05-2016
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells
Publisher: Wiley
Date: 20-01-2015
DOI: 10.1002/PIP.2585
Progress on hot carrier cells
Publisher: Elsevier BV
Date: 06-2009
High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells
Publisher: Wiley
Date: 13-12-2020
Off-grid solar photovoltaic systems for rural electrification and emissions mitigation in India
Publisher: Elsevier BV
Date: 11-2016
Nanoparticle scattering for multijunction solar cells
Publisher: SPIE
Date: 29-04-2016
DOI: 10.1117/12.2228589
Simulation of a Novel Configuration for Luminescent Solar Concentrator Photovoltaic Devices Using Bifacial Silicon Solar Cells
Publisher: MDPI AG
Date: 28-01-2020
DOI: 10.3390/APP10030871
Abstract: In this study, a novel configuration for luminescent solar concentrator photovoltaic (LSC PV) devices is presented, with vertically placed bifacial PV solar cells made of mono-crystalline silicon (mono c-Si). This LSC PV device comprises multiple rectangular cuboid lightguides, made of poly (methyl methacrylate) (PMMA), containing Lumogen dyes, in particular, either Lumogen red 305 or orange 240. The bifacial solar cells are located in between these lightguide cubes and can, therefore, receive irradiance at both of their surfaces. The main aim of this study is to theoretically determine the power conversion efficiency (PCE) of five differently configured LSC PV devices. For this purpose, Monte Carlo ray tracing simulations were executed to analyze the irradiance at receiving PV cell surfaces, as well as the optical performance of these LSC PV devices. Five different LSC PV devices, with different geometries and varying dye concentrations, were modeled. To maximize the device efficiency, the bifacial cells were also attached to the back side of the lightguides. The ray tracing simulations resulted in a maximum efficiency of 16.9% under standard test conditions (STC) for a 15 × 15 cm2 LSC PV device, consisting of nine rectangular cuboid 5 × 5 × 1 cm3 PMMA lightguides with 5 ppm orange 240 dye, with 12 vertically positioned 5 × 1 cm2 bifacial cells in between the lightguides and nine 5 × 5 cm2 PV cells attached to the back of the device. If the cells are not applied to the back of this LSC PV device configuration, the maximum PCE will be 2.9% (under STC), where the LSC PV device consists of 25 cubical 1 × 1 × 1 cm3 PMMA lightguides with 110 ppm red 305 dye and 40 vertically oriented bifacial PV cells of 1 × 1 cm2 in between the lightguides. These results show the vast future potential for LSC PV technologies, with a higher performance and efficiency than the common threshold PCE for LSC PV devices of 10%.
Solcore: a multi-scale, Python-based library for modelling solar cells and semiconductor materials
Publisher: Springer Science and Business Media LLC
Date: 12-04-2018
Addressing reflectivity losses in multi-junction solar cells to achieve 50% power conversion efficiency
Publisher: Informa UK Limited
Date: 10-11-2015
Radiation Resistance of Wide Band Gapn+/pAlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
Publisher: IOP Publishing
Date: 29-06-2007
DOI: 10.1143/JJAP.46.L645
Integrated optimisation of photovoltaic and battery storage systems for UK commercial buildings
Publisher: Elsevier BV
Date: 08-2017
Strain-balanced materials for high-efficiency solar cells
Publisher: IEEE
Date: 2000
Directional emission in strain-balanced quantum well solar cells
Publisher: IEEE
Date: 06-2009
Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells
Publisher: Elsevier BV
Date: 04-2006
Singlet Oxygen Mediated Photochemical Upconversion of NIR Light
Publisher: American Chemical Society (ACS)
Date: 08-04-2011
DOI: 10.1021/JZ200270W
Quantum dot solar concentrators
Publisher: Pleiades Publishing Ltd
Date: 08-2004
DOI: 10.1134/1.1787111
Simulation of novel InAlAsSb solar cells
Publisher: SPIE
Date: 09-02-2012
DOI: 10.1117/12.909324
Radiation-resistance analysis of GaAs and InGaP sub cells for InGaP/GaAs/Ge 3-junction space solar cells
Publisher: IEEE
Date: 05-2008
Characterising quantum dot concentrators
Publisher: IEEE
Date: 2000
Analysis of energy access and impact of modern energy sources in unelectrified villages in Uttar Pradesh
Publisher: Elsevier BV
Date: 12-2016
Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP
Publisher: Wiley
Date: 02-06-2011
DOI: 10.1002/PIP.1121
Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves
Publisher: American Chemical Society (ACS)
Date: 18-04-2002
DOI: 10.1021/CG025502Y
Roadmap for the next-generation of hybrid photovoltaic-thermal solar energy collectors
Publisher: Elsevier BV
Date: 11-2018
Intermediate band solar cells: Recent progress and future directions
Publisher: AIP Publishing
Date: 06-2015
DOI: 10.1063/1.4916561
Avoiding Shading Losses in Concentrator Photovoltaics Using a Soft-Imprinted Cloaking Geometry
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2022
Spectral response and I-V characteristics of large well number multi quantum well solar cells
Publisher: Springer Science and Business Media LLC
Date: 03-2005
Super‐high‐efficiency multi‐junction solar cells
Publisher: Wiley
Date: 18-02-2005
DOI: 10.1002/PIP.606
Unveiling microscopic carrier loss mechanisms in 12% efficient Cu2ZnSnSe4 solar cells
Publisher: Springer Science and Business Media LLC
Date: 21-07-2022
DOI: 10.1038/S41560-022-01078-7
Abstract: Understanding carrier loss mechanisms at microscopic regions is imperative for the development of high-performance polycrystalline inorganic thin-film solar cells. Despite the progress achieved for kesterite, a promising environmentally benign and earth-abundant thin-film photovoltaic material, the microscopic carrier loss mechanisms and their impact on device performance remain largely unknown. Herein, we unveil these mechanisms in state-of-the-art Cu 2 ZnSnSe 4 (CZTSe) solar cells using a framework that integrates multiple microscopic and macroscopic characterizations with three-dimensional device simulations. The results indicate the CZTSe films have a relatively long intragrain electron lifetime of 10–30 ns and small recombination losses through bandgap and/or electrostatic potential fluctuations. We identify that the effective minority carrier lifetime of CZTSe is dominated by a large grain boundary recombination velocity (~10 4 cm s −1 ), which is the major limiting factor of present device performance. These findings and the framework can greatly advance the research of kesterite and other emerging photovoltaic materials.
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