ORCID Profile
0000-0001-9901-3861
Current Organisations
University of Oklahoma
,
Université de Bordeaux
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Publisher: IOP Publishing
Date: 09-09-2016
DOI: 10.1088/0957-4484/27/41/415205
Abstract: Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of in idual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V(-1) s(-1).
Publisher: American Physiological Society
Date: 09-2012
Publisher: AIP Publishing
Date: 15-11-2010
DOI: 10.1063/1.3511346
Abstract: Highly transparent and conducting Al-doped ZnO (AZO) films are prepared via sol-gel method with a broad range of nominal Al-doping. The film porosity and morphology is determined by the rate of temperature r ing during the drying of the gel phase. The minimum resistivity is observed to occur around 1.5–2 at. % Al-doped films, irrespective of the morphology and microstructure. It is found by local chemical analysis that Al tends to segregate at the grain boundaries and above a critical concentration, the segregated Al starts to dominate the electronic transport in nanocrystalline AZO. The optical measurements corroborate these findings showing a systematic increase in carrier density only up to 1.5–2 at. % Al-doping. It is concluded that the presence of the resistivity minimum is not merely determined by a solubility limit but is a result of the interplay between the changing carrier concentration and carrier scattering at the segregated Al.
Publisher: Royal Society of Chemistry (RSC)
Date: 2013
DOI: 10.1039/C3TC00061C
Publisher: Wiley
Date: 06-11-2012
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4TA04209C
Abstract: The nano h-LiMnBO 3 composite delivers a high first discharge capacity of 140 mA h g −1 at C/15 rate within a reduced potential window.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
Publisher: Beilstein Institut
Date: 19-04-2016
DOI: 10.3762/BJNANO.7.50
Abstract: The atomistic mechanisms active during plastic deformation of nanocrystalline metals are still a subject of controversy. The recently developed approach of combining automated crystal orientation mapping (ACOM) and in situ straining inside a transmission electron microscope was applied to study the deformation of nanocrystalline Pd x Au 1− x thin films. This combination enables direct imaging of simultaneously occurring plastic deformation processes in one experiment, such as grain boundary motion, twin activity and grain rotation. Large-angle grain rotations with ≈39° and ≈60° occur and can be related to twin formation, twin migration and twin–twin interaction as a result of partial dislocation activity. Furthermore, plastic deformation in nanocrystalline thin films was found to be partially reversible upon rupture of the film. In conclusion, conventional deformation mechanisms are still active in nanocrystalline metals but with different weighting as compared with conventional materials with coarser grains.
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2JM16426D
Location: United States of America
Location: United States of America
No related grants have been discovered for Horst Hahn.