ORCID Profile
0000-0002-9070-8373
Current Organisation
Australian National University
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Nanotechnology | Compound Semiconductors | Optics And Opto-Electronic Physics | Nanotechnology | Photodetectors, Optical Sensors and Solar Cells | Photonics, Optoelectronics and Optical Communications | Nanophotonics | Nanomaterials | Nanofabrication, Growth and Self Assembly | Optical Physics | Other Electronic Engineering | Electrical and Electronic Engineering | Materials Engineering | Interdisciplinary Engineering Not Elsewhere Classified | Materials Engineering Not Elsewhere Classified | Photonics and Electro-Optical Engineering (excl. Communications) | Microelectronics and Integrated Circuits | Plant Biology | Nanotechnology | Functional materials | Photonics optoelectronics and optical communications | Nanoscale characterisation | Communications Technologies | Time-Series Analysis | Invertebrate Biology | Electrical Engineering | Lasers and Quantum Electronics | Condensed Matter Physics—Structural Properties | Quantum Optics And Lasers | Optical And Photonic Systems | Electrochemistry | Nanoscale Characterisation | Petrophysics | Plant Cell and Molecular Biology | Dynamical Systems in Applications | Plant Physiology | Nanobiotechnology | Nanoelectronics
ANZSRC Socio-Economic Objective (SEO)
Expanding Knowledge in Engineering | Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Technology | Integrated circuits and devices | Physical sciences | Solar-photoelectric | Emerging Defence Technologies | Network transmission equipment | Other | Other | Expanding Knowledge in the Biological Sciences | Communication equipment not elsewhere classified | Telecommunications | Plant Production and Plant Primary Products not elsewhere classified | National Security | Mathematical sciences | Health and support services not elsewhere classified | Ceramics | Hydrogen Production from Renewable Energy | Communication services not elsewhere classified | Economic issues not elsewhere classified | Solar-Photovoltaic Energy | Industrial Chemicals and Related Products not elsewhere classified | Scientific Instruments |
Related Links
Publications
Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
Publisher: AIP Publishing
Date: 05-1999
DOI: 10.1063/1.370291
Abstract: Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs s les showed larger PL energy shifts than InGaAs/GaAs s les because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics.
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Publisher: IEEE
Date: 12-2012
Optoelectronic properties of GaAs nanowire photodetector
Publisher: IEEE
Date: 12-2012
Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Publisher: Wiley
Date: 29-08-2016
Abstract: Surface interaction is extremely important to both fundamental research and practical application. Physisorption can induce shape and structural distortion (i.e., conformational changes) in macromolecular and biomolecular adsorbates, but such phenomena have rarely been observed on adsorbents. Here, it is demonstrated theoretically and experimentally that atomically thin boron nitride (BN) nanosheets as an adsorbent experience conformational changes upon surface adsorption of molecules, increasing adsorption energy and efficiency. The study not only provides new perspectives on the strong adsorption capability of BN nanosheets and many other two‐dimensional (2D) nanomaterials but also opens up possibilities for many novel applications. For ex le, it is demonstrated that BN nanosheets with the same surface area as bulk hexagonal BN particles are more effective in purification and sensing.
Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Publisher: Wiley
Date: 05-09-2016
Multiple energy proton implantation induced quantum well intermixing in GaAs/AlGaAs quantum-well infrared photodetectors
Publisher: IEEE
Date: 1999
Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping
Publisher: IEEE
Date: 12-2012
Dielectric diffraction gratings for light-trapping in InGaAs-GaAs quantum well solar cells
Publisher: IEEE
Date: 12-2012
Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Publisher: American Chemical Society (ACS)
Date: 23-08-2021
Improved GaAs nanowire solar cells using AlGaAs for surface passivation
Publisher: IEEE
Date: 12-2012
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
Publisher: Springer Science and Business Media LLC
Date: 19-07-2022
DOI: 10.1038/S41377-022-00912-7
Abstract: III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS x ) to construct III-nitride/a-MoS x core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of −100.42 mA W −1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W −1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS x decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.
Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
Publisher: AIP Publishing
Date: 04-12-2006
DOI: 10.1063/1.2398915
Abstract: The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahertz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump terahertz-probe spectroscopy and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, it was demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch terahertz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast terahertz photonic devices.
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Publisher: American Chemical Society (ACS)
Date: 25-07-2017
DOI: 10.1021/ACS.NANOLETT.7B01725
Abstract: Single nanowire lasers based on bottom-up III-V materials have been shown to exhibit room-temperature near-infrared lasing, making them highly promising for use as nanoscale, silicon-integrable, and coherent light sources. While lasing behavior is reproducible, small variations in growth conditions across a substrate arising from the use of bottom-up growth techniques can introduce interwire disorder, either through geometric or material inhomogeneity. Nanolasers critically depend on both high material quality and tight dimensional tolerances, and as such, lasing threshold is both sensitive to and a sensitive probe of such inhomogeneity. We present an all-optical characterization technique coupled to statistical analysis to correlate geometrical and material parameters with lasing threshold. For these multiple-quantum-well nanolasers, it is found that low threshold is closely linked to longer lasing wavelength caused by losses in the core, providing a route to optimized future low-threshold devices. A best-in-group room temperature lasing threshold of ∼43 μJ cm
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Publisher: IOP Publishing
Date: 21-02-2017
Abstract: With the recent advances in nanowire (NW) growth and fabrication, there has been rapid development and application of GaAs NWs in optoelectronics. It is also of importance to study the radiation tolerance of optoelectronic nano-devices for atomic energy and space-based applications. Here, photoluminescence (PL) and time-resolved photoluminescence measurements were carried out on GaAs/AlGaAs core/shell NWs at room temperature before and after 1 MeV proton irradiation with fluences ranging from 1.0 × 10
The intrinsic upper critical field of high-Tc superconductors
Publisher: Elsevier BV
Date: 08-1997
The critical magnetic field in the high-Tc superconductive thin films
Publisher: Elsevier BV
Date: 08-1997
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Publisher: The Optical Society
Date: 2007
DOI: 10.1364/OE.15.007047
Abstract: We report on the construction, optical alignment and performance of a receiver which is capable of recording the full polarization state of coherent terahertz radiation. The photoconductive detector was fabricated on InP which had been implanted with Fe(+) ions. The device operated successfully when it was gated with near infrared femtosecond pulses from either a Ti:sapphire laser oscillator or a 1 kHz regenerative laser lifier. When illuminated with terahertz radiation from a typical photoconductive source, the optimized device had a signal to noise figure of 100:1 with a usable spectral bandwidth of up to 4 THz. The device was shown to be very sensitive to terahertz polarization, being able to resolve changes in polarization of 0.34 degrees. Additionally, we have demonstrated the usefulness of this device for (i) polarization sensitive terahertz spectroscopy, by measuring the birefringence of quartz and (ii) terahertz emission experiments, by measuring the polarization dependence of radiation generated by optical rectification in (110)-ZnTe.
A Self‐Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Publisher: Wiley
Date: 2023
Abstract: The fast development of the Internet of Things (IoT) has driven an increasing consumer demand for self‐powered gas sensors for real‐time data collection and autonomous responses in industries such as environmental monitoring, workplace safety, smart cities, and personal healthcare. Despite intensive research and rapid progress in the field, most reported self‐powered devices, specifically NO 2 sensors for air pollution monitoring, have limited sensitivity, selectivity, and scalability. Here, a novel photovoltaic self‐powered NO 2 sensor is demonstrated based on axial p–i–n homojunction InP nanowire (NW) arrays, that overcome these limitations. The optimized innovative InP NW array device is designed by numerical simulation for insights into sensing mechanisms and performance enhancement. Without a power source, this InP NW sensor achieves an 84% sensing response to 1 ppm NO 2 and records a limit of detection down to the sub‐ppb level, with little dependence on the incident light intensity, even under % of 1 sun illumination. Based on this great environmental fidelity, the sensor is integrated into a commercial microchip interface to evaluate its performance in the context of dynamic environmental monitoring of motor vehicle exhaust. The results show that compound semiconductor nanowires can form promising self‐powered sensing platforms suitable for future mega‐scale IoT systems.
Reply to Comment on Water Droplet Motion Control on Superhydrophobic Surfaces: Exploiting the Wenzel-to-Cassie Transition
Publisher: American Chemical Society (ACS)
Date: 18-10-2011
DOI: 10.1021/LA203610V
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Publisher: IEEE
Date: 11-2010
InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition
Publisher: IEEE
Date: 2005
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Publisher: MDPI AG
Date: 11-08-2021
DOI: 10.3390/S21165420
Abstract: Semiconductor nanowire arrays have been demonstrated as promising candidates for nanoscale optoelectronics applications due to their high detectivity as well as tunable photoresponse and bandgap over a wide spectral range. In the infrared (IR), where these attributes are more difficult to obtain, nanowires will play a major role in developing practical devices for detection, imaging and energy harvesting. Due to their geometry and periodic nature, vertical nanowire and nanopillar devices naturally lend themselves to waveguide and photonic crystal mode engineering leading to multifunctional materials and devices. In this paper, we computationally develop theoretical basis to enable better understanding of the fundamental electromagnetics, modes and couplings that govern these structures. Tuning the photonic response of a nanowire array is contingent on manipulating electromagnetic power flow through the lossy nanowires, which requires an intimate knowledge of the photonic crystal modes responsible for the power flow. Prior published work on establishing the fundamental physical modes involved has been based either on the modes of in idual nanowires or numerically computed modes of 2D photonic crystals. We show that a unified description of the array key electromagnetic modes and their behavior is obtainable by taking into account modal interactions that are governed by the physics of exceptional points. Such models that describe the underlying physics of the photoresponse of nanowire arrays will facilitate the design and optimization of ensembles with requisite performance. Since nanowire arrays represent photonic crystal slabs, the essence of our results is applicable to arbitrary lossy photonic crystals in any frequency range.
Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Publisher: IEEE
Date: 2005
Investigation of light–matter interaction in single vertical nanowires in ordered nanowire arrays
Publisher: Royal Society of Chemistry (RSC)
Date: 2022
DOI: 10.1039/D1NR08088A
Abstract: Single vertical nanowire photodetectors from ordered InP nanowire arrays were fabricated by using the focused ion beam technique to directly investigate the light–matter interaction in nanowire arrays and its effect on photodetector performance.
Introduction to the Special Issue on Emerging Areas in Integrated Photonics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2018
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Publisher: American Chemical Society (ACS)
Date: 18-07-2016
DOI: 10.1021/ACS.NANOLETT.6B01528
Abstract: Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm(2) V(-1) s(-1)) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.
Neural Correlates of Hiccups in Patients with Lateral Medullary Infarction
Publisher: SAGE Publications
Date: 07-2021
DOI: 10.1177/09727531211023753
Abstract: Hiccups is a known presentation of lateral medullary infarction. However, the region in the medulla associated with this finding is not clearly known. In this study, we aimed to study the neural correlates of hiccups in patients with lateral medullary infarction (LMI). This retrospective study included all patients who presented with lateral medullary infarction between January 2008 and May 2018. Patients with hiccups following LMI were identified as cases and those with no hiccups but who had LMI were taken as controls. The magnetic resonance imaging of the brain was done viewed and in idual lesions were mapped manually to the template brain. Voxel-based lesion-symptom mapping employing nonparametric permutation testing was performed using MRIcron. There were a total of 31 patients with LMI who presented to the hospital during the study period. There were 11 (35.5%) patients with hiccups. Using the voxel-based lesion-symptom mapping analysis, the dorso-lateral region of the middle medulla showed significant association with hiccups. In patients with LMI, we postulate that damage to the dorsolateral aspect on the middle medulla could result in hiccups.
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2009
Nanostructured photovoltaics PREFACE
Publisher: IOP Publishing
Date: 17-12-2013
DOI: 10.1088/0022-3727/46/2/020301
Abstract: Energy and the environment are two of the most important global issues that we currently face. The development of clean and sustainable energy resources is essential to reduce greenhouse gas emission and meet our ever-increasing demand for energy. Over the last decade photovoltaics, as one of the leading technologies to meet these challenges, has seen a continuous increase in research, development and investment. Meanwhile, nanotechnology, which is considered to be the technology of the future, is gradually revolutionizing our everyday life through adaptation and incorporation into many traditional technologies, particularly energy-related technologies, such as photovoltaics. While the record for the highest efficiency is firmly held by multijunction III–V solar cells, there has never been a shortage of new research effort put into improving the efficiencies of all types of solar cells and making them more cost effective. In particular, there have been extensive and exciting developments in employing nanostructures features with different low dimensionalities, such as quantum wells, nanowires, nanotubes, nanoparticles and quantum dots, have been incorporated into existing photovoltaic technologies to enhance their performance and/or reduce their cost. Investigations into light trapping using plasmonic nanostructures to effectively increase light absorption in various solar cells are also being rigorously pursued. In addition, nanotechnology provides researchers with great opportunities to explore the new ideas and physics offered by nanostructures to implement advanced solar cell concepts such as hot carrier, multi-exciton and intermediate band solar cells. This special issue of Journal of Physics D: Applied Physics contains selected papers on nanostructured photovoltaics written by researchers in their respective fields of expertise. These papers capture the current excitement, as well as addressing some open questions in the field, covering topics including the III–V quantum well superlattice and quantum dot solar cells, Si quantum dot tandem cells, nanostructure-enhanced dye-sensitized solar cells and nanopatterned organic solar cells. We thank all the authors and reviewers for their contribution to this special issue. Special thanks are due to the journal's Publisher, Dr Olivia Roche and the editorial and publishing staff for their help and support.
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2019
Recombination properties of Si-doped InGaAs/GaAs quantum dots
Publisher: IOP Publishing
Date: 09-10-2006
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Publisher: AIP Publishing
Date: 07-12-1998
DOI: 10.1063/1.122780
Abstract: We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference (unintermixed) quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices.
Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Publisher: Wiley
Date: 16-06-2015
Abstract: A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milli ere photocurrents, nano ere dark currents, and excellent selectivity to ultralow UV light intensities. This is a significant step toward the integration of high-performance UV photodetectors in wearable devices.
Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Publisher: Wiley
Date: 29-07-2016
Role of stress on impurity free disordering of quantu m dots
Publisher: IEEE
Date: 07-2008
Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing
Publisher: Springer Science and Business Media LLC
Date: 25-09-2007
Impact of Cognitive Reappraisal on Negative Affect, Heart Rate, and Intrusive Memories in Traumatized Refugees
Publisher: SAGE Publications
Date: 05-2017
Abstract: While cognitive reappraisal represents a promising emotion regulation strategy to assist refugees with posttraumatic stress disorder (PTSD) in managing responses to trauma reminders, there has been no experimental research investigating its efficacy in reducing intrusions and negative affect in this group. In this study, 76 refugees and asylum-seekers with varying levels of PTSD received instructions in cognitive reappraisal or emotional suppression before viewing emotional images depicting trauma-related scenes. Findings indicated that cognitive reappraisal led to fewer subsequent image-related intrusions in refugees high in PTSD symptoms. Trait suppression moderated the efficacy of cognitive reappraisal such that participants high in PTSD who had low levels of trait suppression reported significantly lower levels of negative affect when using cognitive reappraisal compared to emotional suppression. These findings highlight the potential utility of cognitive reappraisal when assisting in iduals with PTSD to manage responses trauma reminders and for informing the treatment of the psychological effects of the refugee experience.
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
Publisher: American Chemical Society (ACS)
Date: 13-08-2019
Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors
Publisher: IEEE
Date: 2002
III-V nanowires for optoelectronic applications
Publisher: IEEE
Date: 12-2012
Vertical Emitting Nanowire Vector Beam Lasers
Publisher: American Chemical Society (ACS)
Date: 16-05-2023
Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers
Publisher: AIP Publishing
Date: 31-05-2002
DOI: 10.1063/1.1484244
Abstract: We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.
Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation
Publisher: AIP Publishing
Date: 2001
DOI: 10.1063/1.1332984
Abstract: Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs’ response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.
Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes
Publisher: IEEE
Date: 2002
Photoconductive response correction for detectors of terahertz radiation
Publisher: AIP Publishing
Date: 09-2008
DOI: 10.1063/1.2969035
Abstract: Photoconductive detectors are convenient devices for detecting pulsed terahertz radiation. We have optimized Fe+ ion-damaged InP materials for photoconductive detector signal to noise performance using dual-energy doses in the range from 2.5×1012 to 1.0×1016 cm−2. Ion implantation allowed the production of semiconducting materials with free-carrier lifetimes between 0.5 and 2.1 ps, which were measured by optical pump terahertz probe spectroscopy. The time resolved photoconductivity of the detector substrates was acquired as a function of time after excitation by 2 nJ pulses from a laser oscillator. These data, when combined with a deconvolution algorithm, provide an excellent spectral response correction to the raw photocurrent signal recorded by the photoconductive detectors.
Perspectives on III-V Semiconductor Nanowire Optoelectronics and Beyond [Highlights] [Highlights]
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2023
Properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors
Publisher: IOP Publishing
Date: 15-04-2009
Emotional suppression in torture survivors: Relationship to posttraumatic stress symptoms and trauma-related negative affect
Publisher: Elsevier BV
Date: 08-2016
DOI: 10.1016/J.PSYCHRES.2016.05.048
Abstract: While clinical reports suggest that torture survivors may try to suppress their emotions during torture, little is known about the use of emotional suppression following torture. In this study, 82 refugees and asylum-seekers (including 33 torture survivors) completed self-report measures of trait suppression, PTSD symptoms and baseline negative affect before being exposed to images depicting scenes of interpersonal trauma. The use of suppression while viewing the images was indexed and negative affect was measured both immediately after viewing the images and following a five minute rest period. Findings indicated that torture survivors did not show higher rates of trait suppression or state emotional suppression during the experimental session compared to non-torture survivors. However, torture survivors who endorsed state suppression higher levels of distress, and this relationship was especially strong for those with more severe PTSD symptoms. In contrast, there was a negative relationship between state suppression and distress for non-torture survivors with high levels of PTSD symptoms. These findings suggest that, while torture exposure does not lead to greater use of suppression, it does influence the impact of suppression on emotional responses to stimuli.
MOCVD grown quantum dot-in-a-well solar cells
Publisher: Trans Tech Publications, Ltd.
Date: 06-2010
DOI: 10.4028/WWW.SCIENTIFIC.NET/KEM.442.398
Abstract: This paper reports the experimental work on the characterization of quantum dot-in-well (DWELL) solar cell grown by metal-organic chemical vapor deposition (MOCVD) without employing any post-growing optimization like antireflection coating and metal grid. The structure of the 10-layer DWELL solar cells is studied by cross-sectional transmission electron microscopy (TEM). Room temperature photoluminescence (PL) spectra show strong quantization at 1178.5 nm with a linewidth of 79.9 nm. External quantum efficiency spectra show enhancement in the spectral response of the photocurrent with respect to the reference quantum dot cell (without DWELL structure). In spite of the reduction in conversion efficiency due to poor collection of current in external circuit compared to reference quantum dot cell it show the improvement in open circuit voltage.
Study of intermixing in InGaAs∕(Al)GaAs quantum well and quantum dot structures for optoelectronic∕photonic integration
Publisher: Institution of Engineering and Technology (IET)
Date: 2005
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Publisher: Springer Science and Business Media LLC
Date: 08-08-2017
DOI: 10.1038/S41598-017-07970-7
Abstract: Intermediate band solar cells (IBSCs) are conceptual and promising for next generation high efficiency photovoltaic devices, whereas, IB impact on the cell performance is still marginal due to the weak absorption of IB states. Here a rational design of a hybrid structure composed of ZnTe:O/ZnO core-shell nanowires (NWs) with Al bowtie nanoantennas is demonstrated to exhibit strong ability in tuning and enhancing broadband light response. The optimized nanowire dimensions enable absorption enhancement by engineering leaky-mode dielectric resonances. It maximizes the overlap of the absorption spectrum and the optical transitions in ZnTe:O intermediate-band (IB) photovoltaic materials, as verified by the enhanced photoresponse especially for IB states in an in idual nanowire device. Furthermore, by integrating Al bowtie antennas, the enhanced exciton-plasmon coupling enables the notable improvement in the absorption of ZnTe:O/ZnO core-shell single NW, which was demonstrated by the profound enhancement of photoluminescence and resonant Raman scattering. The marriage of dielectric and metallic resonance effects in subwavelength-scale nanowires opens up new avenues for overcoming the poor absorption of sub-gap photons by IB states in ZnTe:O to achieve high-efficiency IBSCs.
Single n+-i-n+InP nanowires for highly sensitive terahertz detection
Publisher: IOP Publishing
Date: 20-02-2017
Abstract: Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Publisher: Wiley
Date: 14-03-2013
DOI: 10.1002/PIP.2161
Suppression of thermal atomic interdiffusion in InGaAs/AlGaAs QW laser structures
Publisher: SPIE
Date: 25-03-2004
DOI: 10.1117/12.523517
Spectral behavior of quantum dots-in-a-well infrared photodetectors grown by MOCVD
Publisher: IEEE
Date: 10-2007
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Publisher: IOP Publishing
Date: 20-04-2010
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
Publisher: American Chemical Society (ACS)
Date: 20-09-2019
Abstract: Currently, a significant amount of photovoltaic device cost is related to its requirement of high-quality absorber materials, especially in the case of III-V solar cells. Therefore, a technology that can transform a low-cost, low minority carrier lifetime material into an efficient solar cell can be beneficial for future applications. Here, we transform an inefficient p-type InP substrate with a minority carrier lifetime less than 100 ps into an efficient solar cell by utilizing a radial p-n junction nanowire architecture. We fabricate a p-InP/n-ZnO/AZO radial heterojunction nanowire solar cell to achieve a photovoltaic conversion efficiency of 17.1%, the best reported value for radial junction nanowire solar cells. The quantum efficiency of ∼95% (between 550 and 750 nm) and the short-circuit current density of 31.3 mA/cm
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Publisher: IEEE
Date: 10-2011
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
Publisher: American Chemical Society (ACS)
Date: 28-02-2019
Abstract: One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potential application in mid-wavelength infrared (MWIR) photon detection. However, the limited performance and complicated photoresponse mechanism of InAs NW-based photodetectors have held back their true potential for real application. In this study, we developed ferroelectric polymer P(VDF-TrFE)-coated InAs NW-based photodetectors and demonstrated that the electrostatic field caused by polarized ferroelectric materials modifies the surface electron-hole distribution as well as the band structure of InAs NWs, resulting in ultrasensitive photoresponse and a wide photodetection spectral range. Our single InAs NW photodetectors exhibit a high responsivity ( R) of 1.6 × 10
Suppression of thermal atomic interdiffusion in C-doped InGaAs∕AlGaAs quantum well laser structures using TiO2 dielectric layers
Publisher: AIP Publishing
Date: 06-12-2004
DOI: 10.1063/1.1833563
Abstract: The effects of thermal annealing on C-doped InGaAs∕AlGaAs quantum well laser structures capped with titanium dioxide (TiO2) layers were investigated. The atomic interdiffusion was greatly suppressed by the presence of a TiO2 capping layer during annealing, inhibiting even the thermal intermixing observed in the uncapped s le. An increase in the amount of lattice contraction associated with the presence of substitutional carbon CAs after annealing without a capping layer was observed, but not after annealing with a TiO2 capping layer. Capacitance–voltage measurements confirmed the electrical activation of carbon after annealing without a dielectric layer and show a negligible change after annealing using a TiO2 capping layer. The possible mechanisms involving both the atomic intermixing on the group III sublattice and carbon activation on the group V sublattice and the implications for optoelectronic device integration using impurity-free intermixing are discussed.
Review on III–V Semiconductor Nanowire Array Infrared Photodetectors
Publisher: Wiley
Date: 04-04-2023
Abstract: In recent years, III–V semiconductor nanowires have been widely investigated for infrared photodetector applications due to their direct and suitable bandgap, unique optical and electrical properties, flexibility in device design and to create heterostructures, and/or grow on a foreign substrate such as Si with more effective strain relaxation compared with planar structures. In particular, vertically aligned and ordered nanowire arrays have emerged as a promising photodetector platform, since their geometry‐related light absorption and carrier transport properties can be tailored to achieve high photodetector performance and new functionalities. In this article, the state‐of‐the‐art progress in the development of various types of infrared photodetectors based on III–V semiconductor nanowire arrays is reviewed. The nanowire synthesis/fabrication methods are introduced briefly at first, followed by discussions on the working principle and device performance of various types of nanowire array‐based photodetectors and their emerging applications. Finally, we analyze the challenges and present the perspectives for the development of future low‐cost, large‐scale, high‐performance nanowire array infrared photodetectors for practical applications.
Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
Publisher: MDPI AG
Date: 19-03-2020
DOI: 10.3390/MA13061400
Abstract: Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
Over 1.0mm-long boron nitride nanotubes
Publisher: Elsevier BV
Date: 09-2008
THz emitters and detectors based on ion implanted III-V semiconductors
Publisher: IEEE
Date: 09-2006
<title>Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors</title>
Publisher: SPIE
Date: 12-06-2001
DOI: 10.1117/12.429438
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Publisher: IOP Publishing
Date: 13-07-2012
DOI: 10.1088/0022-3727/45/30/305102
Abstract: In this paper, a staircase plasmonic nano-antenna device is analysed both theoretically and experimentally. The tapered nano-antenna cavity with a grating leads to electric field enhancement factor (EF) as high as 31 close to 830 nm. The integration of a metallic grating aids the coupling of light coming from the vertical direction to the nano-antenna, increasing the electric field in the nano-antenna by a factor of 3. The smallest air gap width between the metallic regions of the fabricated nano-antenna is about 35 nm, fabricated using focused ion beam system. The small air gaps in the nano-antennas can generate very high intensity electric fields which can be used in applications in biological sensing and imaging, nanoparticle manipulations and enhancement of nonlinear effects. In this paper, to experimentally demonstrate that with the integration of a well designed grating and reflectors, the resonance inside the nano-antenna cavity is increased significantly, we exploit one application of this device: the enhancement of surface enhanced Raman scattering (SERS). The present structure can lead to SERS EFs above 1 million.
Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide
Publisher: AIP Publishing
Date: 18-09-2002
DOI: 10.1063/1.1503857
Abstract: In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well (QW) structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these s les, it was found that although the deposition of GaxOy and subsequent annealing caused additional injection of Ga into the SiO2 layer, Ga atoms were still able to outdiffuse from the GaAs QW structure during annealing, to generate excess Ga vacancies. The suppression of interdiffusion with the presence of Ga vacancies was explained by the thermal stress effect which suppressed Ga vacancy diffusion during annealing. It suggests that GaxOy may therefore be used as a mask material in conjunction with other dielectric capping layers in order to control and selectively achieve impurity-free vacancy disordering.
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Publisher: IOP Publishing
Date: 18-03-2010
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2020
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Publisher: AIP Publishing
Date: 15-02-2010
DOI: 10.1063/1.3309748
Abstract: In this article, we optimize the coupling efficiency from a GaAs microdisk resonator into a single mode spiral waveguide. A classical microdisk resonator coupling light into a nonevanescent straight waveguide reaches a typical coupling efficiency of 67%. We show that the introduction of a spiral waveguide that works both as a waveguide and circular Bragg reflector can improve such efficiency to almost 90%. The same structure with the addition of a taper can couple up to 80% of the generated power into a slot waveguide.
Compound semiconductor nanowires for optoelectronic devices
Publisher: IEEE
Date: 06-2013
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Publisher: American Chemical Society (ACS)
Date: 05-11-2019
Abstract: Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.
Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization
Publisher: AIP Publishing
Date: 15-07-2008
DOI: 10.1063/1.2959681
Abstract: This paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of the conduction band levels is significantly larger than the broadening of the interband photoluminescence (PL) transitions involving both conduction and hole states. The analysis also reveals a contribution from the wetting layer both in PL and modeled C-V profiles which is much stronger than in typical molecular beam epitaxy grown dots. The presence of a built-in local field oriented from the apex of the dot toward its base, contrary to the direction expected for a strained dot with uniform composition (negative dipole), is also derived from fitting of the C-V experimental data.
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Publisher: IOP Publishing
Date: 06-10-2008
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Publisher: AIP Publishing
Date: 02-02-2015
DOI: 10.1063/1.4907348
Abstract: Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In0.5Ga0.5As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Publisher: Springer Science and Business Media LLC
Date: 17-06-2016
DOI: 10.1038/NCOMMS11927
Abstract: Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Publisher: IEEE
Date: 12-2010
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Publisher: IEEE
Date: 12-2010
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Publisher: IOP Publishing
Date: 08-11-2011
DOI: 10.1088/0022-3727/44/47/475105
Abstract: In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.
Modal refractive index measurement in nanowire lasers—a correlative approach
Publisher: IOP Publishing
Date: 09-2023
Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors
Publisher: AIP Publishing
Date: 06-2006
DOI: 10.1063/1.2202704
Abstract: In this work, rapid thermal annealing was performed on InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown s le when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the largely redshifted photoresponse peak of 7.4μm (compared with the 6.1μm of the as-grown QDIP), a high energy peak at 5.6μm (220meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Publisher: AIP Publishing
Date: 15-06-2012
DOI: 10.1063/1.4729833
Abstract: We report on a theoretical study of the relationship between interdiffusion and the conduction band optical absorption of In(Ga)As/GaAs quantum dots. Quantum dot geometries are progressively interdiffused based on Fick’s model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dot optical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Publisher: AIP Publishing
Date: 12-2012
DOI: 10.1063/1.4768283
Abstract: Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiOxNy films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.
Doping effect on dark currents in In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Publisher: AIP Publishing
Date: 11-09-2006
DOI: 10.1063/1.2354432
Abstract: Stacked self-assembled In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Publisher: Optica Publishing Group
Date: 24-06-2009
Vertically Emitting Indium Phosphide Nanowire Lasers
Publisher: American Chemical Society (ACS)
Date: 21-05-2018
DOI: 10.1021/ACS.NANOLETT.8B00334
Abstract: Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Publisher: Elsevier BV
Date: 06-2001
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Publisher: AIP Publishing
Date: 16-06-2008
DOI: 10.1063/1.2943653
Abstract: This letter reports the electrical and field-emission properties of Au-decorated boron nitride nanotubes (Au-BNNTs). The insulating BNNTs become metallic after Au coating as the Au coverage exceeds a critical value. The Au decoration modifies the work function of the BNNTs and, as a consequence, the field-emission current densities of Au-BNNTs are significantly enhanced. Correspondingly, the turn-on field of the Au-BNNTs is reduced to one third and the emission current density is increased by four orders in contrast to pure BNNTs. The experimental results demonstrate that such Au-BNNTs are promising electron field emitters.
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Publisher: SPIE
Date: 28-08-2008
DOI: 10.1117/12.793568
High efficiency coupling of light from photonic wire lasers into Nano-antennas
Publisher: IEEE
Date: 12-2010
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Publisher: IEEE
Date: 12-2010
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Publisher: Wiley
Date: 04-11-2014
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Publisher: Wiley
Date: 02-07-2021
Abstract: III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW nanowires are based on the wurtzite phase and exhibit non‐uniform morphology due to the complex heterostructure growth, making it challenging to incorporate multiple‐QWs (MQW) for optoelectronic applications. Here, a new strategy for the growth of InGaAs/InP MQW nanowire arrays by selective area metalorganic vapor phase epitaxy is reported. It is revealed that {110} faceted InP nanowires with mixed zincblende and wurtzite phases can be achieved, forming a critical base for the subsequent growth of highly‐uniform, taper‐free, hexagonal‐shaped MQW nanowire arrays with excellent optical properties. Room‐temperature lasing at the wavelength of ≈1 µm under optical pumping is achieved with a low threshold. By incorporating dopants to form an n + ‐i‐n + structure, InGaAs/InP 40‐QW nanowire array photodetectors are demonstrated with the broadband response (400–1600 nm) and high responsivities of 2175 A W −1 at 980 nm outperforming those of conventional planar InGaAs photodetectors. The results show that the new growth strategy is highly feasible to achieve high‐quality InGaAs/InP MQW nanowires for the development of future optoelectronic devices and integrated photonic systems.
Two-color InGaAs∕GaAs quantum dot infrared photodetectors by selective area interdiffusion
Publisher: AIP Publishing
Date: 07-07-2008
DOI: 10.1063/1.2955517
Abstract: We report the postgrowth fabrication of two-color InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (TiO2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the TiO2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8μm around the wavelength of 6μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Publisher: Elsevier BV
Date: 02-2001
Single GaAs/AlGaAs nanowire photoconductive terahertz detectors
Publisher: IEEE
Date: 12-2014
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Publisher: IOP Publishing
Date: 07-05-2009
Influence of SiO2and TiO2dielectric layers on the atomic intermixing of InxGa1−xAs/InP quantum well structures
Publisher: IOP Publishing
Date: 20-07-2007
Broadband Single-Nanowire Photoconductive Terahertz Detectors
Publisher: OSA
Date: 2017
A new result of the E∼j relationship of thermally activated model of high-Tc superconductor
Publisher: Elsevier BV
Date: 08-1997
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Publisher: Royal Society of Chemistry (RSC)
Date: 2010
DOI: 10.1039/C0NR00128G
Abstract: We report on a detailed analysis of the effects of doping on the main device parameters of In(0.5)Ga(0.5)As/GaAs/Al(0.2)Ga(0.8)As quantum dots-in-a-well infrared photodetectors. Due to the relatively large conduction band offset of GaAs/Al(0.2)Ga(0.8)As (167 meV) transitions from wetting layer to quantum well states are observed for the highly doped devices. Since increasing the doping concentration fills the quantum dot states, electrons are forced to occupy the one-dimensional wetting layer states and therefore have quantum-well-like properties. This has facilitated a comparative study of the effects of three-dimensional and one-dimensional confinement of electrons on device parameters such as the responsivity and dark current by studying one particular detector structure with different doping concentrations of the active region.
Flexible InP–ZnO nanowire heterojunction light emitting diodes
Publisher: Royal Society of Chemistry (RSC)
Date: 2022
DOI: 10.1039/D1NH00535A
Abstract: Flexible electronics are gaining rapid popularity in modern day life. We demonstrate a simplified process to make flexible LEDs using p-InP nanowires with conformal coating of ZnO and perform a systematic study.
In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2005
Photonic crystal-enhanced quantum dot infrared photodetectors
Publisher: SPIE
Date: 28-08-2008
DOI: 10.1117/12.793558
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Publisher: AIP Publishing
Date: 13-08-2007
DOI: 10.1063/1.2770765
Abstract: The effect of GaP strain compensation layers was investigated on ten-layer InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.
Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays
Publisher: American Chemical Society (ACS)
Date: 06-06-2016
DOI: 10.1021/ACS.NANOLETT.6B01461
Abstract: Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
III–V Semiconductor Single Nanowire Solar Cells: A Review
Publisher: Wiley
Date: 02-07-2018
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Publisher: American Chemical Society (ACS)
Date: 03-04-2015
DOI: 10.1021/NL504929N
Abstract: We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2011
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Publisher: Elsevier BV
Date: 10-2016
Three-Dimensional in Situ Photocurrent Mapping for Nanowire Photovoltaics
Publisher: American Chemical Society (ACS)
Date: 08-03-2013
DOI: 10.1021/NL304170Q
Abstract: Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel application of a technique based upon two-photon induced photocurrent that provides a submicrometer resolution, three-dimensional reconstruction of photovoltaic parameters. This tool is used to characterize two GaAs nanowire-based devices, revealing the detail of current generation and collection, providing a path toward achieving the promise of nanowire-based photovoltaic devices.
III-V nanowires for optoelectronic applications
Publisher: The Electrochemical Society
Date: 31-08-2013
Abstract: We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two ex les of nanowire lasers and nanowire solar cells.
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Publisher: IOP Publishing
Date: 05-08-2010
DOI: 10.1088/0022-3727/43/33/335104
Abstract: Modern technology is heavily reliant on silicon dioxide and silicon nitride thin films. These films have many electronic and optical applications, and in some cases silicon oxynitride films of intermediate composition are desirable. We have systematically deposited several SiO x N y films by magnetron sputter deposition and thoroughly investigated their composition with Rutherford backscattering spectrometry and optical measurements. The as-deposited stress in these thin films was also measured and all were found to be compressive. Temperature-dependent stress measurements up to 450 ° C were then used to extract the biaxial modulus and coefficient of thermal expansion for each SiO x N y . The SiO 2 -like films exhibit negative thermal expansion, which is consistent with a strong but porous structure. Increasing the nitrogen content results in the thermal expansion coefficient increasing towards values reported elsewhere for Si 3 N 4 .
Influence of Low-Temperature Chemical Vapor Deposited SiO[sub 2] Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Publisher: The Electrochemical Society
Date: 1999
DOI: 10.1149/1.1391000
Intermixing effect in quantum well infrared detector
Publisher: SPIE
Date: 15-12-2000
DOI: 10.1117/12.409876
Self-frequency-conversion nanowire lasers
Publisher: Springer Science and Business Media LLC
Date: 29-04-2022
DOI: 10.1038/S41377-022-00807-7
Abstract: Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In 0.16 Ga 0.84 As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells
Publisher: IEEE
Date: 02-2008
Postgrowth wavelength tuning of optoelectronic devices by ion implantation induced quantum well intermixing
Publisher: IEEE
Date: 2000
Quantum dots-in-a-well infrared photodetectors grown by MOCVD
Publisher: IEEE
Date: 07-2006
Single nanowire green InGaN/GaN light emitting diodes
Publisher: IOP Publishing
Date: 23-09-2016
DOI: 10.1088/0957-4484/27/43/435205
Abstract: Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.
Reduction of gain-saturation in merged beam lasers
Publisher: IEEE
Date: 12-2012
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Publisher: IOP Publishing
Date: 15-11-2022
Abstract: Polarization-sensitive infrared photodetectors are widely needed to distinguish an object from its surrounding environment. Polarization-sensitive detection can be realized by using semiconductors with anisotropic geometry or anisotropic crystal arrangement, such as semiconductor nanowires and two-dimensional (2D) materials. However, these photodetectors show drawbacks in low light absorption, weak polarization sensitivity and stability issues. Here, we designed 2D InAs nanosheet based arrays that are highly suitable for polarization-sensitive infrared photodetection. By using the finite element method (FEM) based on COMSOL Multiphysics, we optimized the geometry of single free-standing InAs nanosheets, obtaining dichroic ratio up to 127 (average) in the wavelength range of 2–3 μ m by reducing the thickness and increasing the height. Extending this to a nanosheet array with an optimized geometry, an enhancement of the absorption intensity from 45% (for a single nanosheet) to over 67% with a dichroic ratio exceeding 50 in the wavelength range of 2–3 μ m can be achieved. Moreover, these unique light absorption properties are tolerant to incident angles up to 30°. The design of such nanosheet array provides a new route for the development of high-performance infrared photodetectors for polarization photodetection.
Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers
Publisher: AIP Publishing
Date: 18-02-2002
DOI: 10.1063/1.1449522
Abstract: The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the s les encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.
Coupling of light from microdisk lasers to nano-antennas with nano-tapers
Publisher: IEEE
Date: 09-2012
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Publisher: The Optical Society
Date: 28-03-2013
DOI: 10.1364/OE.21.008276
Improved performance of GaAs-based terahertz emitters
Publisher: IEEE
Date: 09-2010
Three-dimensional cross-nanowire networks recover full terahertz state
Publisher: American Association for the Advancement of Science (AAAS)
Date: 05-2020
Abstract: Terahertz (THz) radiation is an interesting region of the electromagnetic spectrum lying between microwaves and infrared. Non-ionizing and transparent to most fabrics, it is finding application in security screening and imaging but is also being developed for communication and chemical sensing. To date, most THz detectors have focused just on signal intensity, an effort that discards half the signal in terms of the full optical state, including polarization. Peng et al. developed a THz detector based on crossed nanowires (arranged in a hash structure) that is capable of resolving the full state of the THz light. The approach provides a nanophotonic platform for the further development of THz-based technologies. Science , this issue p. 510
Quantum well intermixing for optoelectronic device integration
Publisher: IEEE
Date: 2002
(Invited) InGaAs/InP Quantum Well Nanowire Surface Emitting LEDs
Publisher: The Electrochemical Society
Date: 05-2020
DOI: 10.1149/MA2020-01161077MTGABS
Abstract: III-V compound semiconductor nanowires (NWs) have drawn much attention as nanoscale light sources for integrated photonics due to their nanoscale size, good optical properties and strain relaxation feature enabling the monolithic growth on lattice mismatched substrates. In particular, NWs grown by selective area epitaxy (SAE) technique have many advantages such as controllability of their size and position, high uniformity in diameter and length, as well as complementary metal-oxide-semiconductor (CMOS) process compatibility, facilitating their integration with Si based electronic technologies. With suitable wavelength ranging from 1.3 to 1.6 μm and lattice match of constituent materials, InGaAs/InP quantum wells (QWs) have been being widely used for optical communication applications. However there has been limited understanding on the growth of InGaAs/InP QWs in nanowire architecture and their application for lasers or LEDs. In this work, we present the study of the SAE growth of InGaAs/InP QW NW array by metalorganic chemical vapour deposition (MOCVD) technique, and the demonstration of both single and array nanowire LEDs with an in-depth investigation of their geometry related device properties.
Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
Publisher: AIP Publishing
Date: 22-10-2007
DOI: 10.1063/1.2802559
Abstract: We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5Ga0.5As quantum dots embedded in an In0.15Ga0.85As∕GaAs quantum well (QW) or a GaAs∕Al0.2Ga0.8As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al0.2Ga0.8As QW.
Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuits
Publisher: IEEE
Date: 2003
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Publisher: AIP Publishing
Date: 27-05-2013
DOI: 10.1063/1.4807506
Abstract: A bound-to-continuum quantum well solar cell structure is proposed, and the band structure and absorption spectra are analyzed by the use of an eight band k·p model. The structure is based on quantum wells that only support bound states for the valence band. The absence of bound conduction band states has a number of potential advantages, including a reduction of electron trapping and, therefore, a reduction of quantum well induced photocarrier recombination due to reduced spatial overlap of the electron and hole wavefunctions.
Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Publisher: American Chemical Society (ACS)
Date: 10-10-2022
DOI: 10.1021/ACS.NANOLETT.2C03101
Abstract: Nanoscale fabrication and characterization techniques critically underpin a vast range of fields, including nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are appealing due to their high spatial resolution and widespread use for processing of nanostructured materials. Here, we introduce FIB-induced fluorescence spectroscopy (FIB-FS) as a nanoscale technique for spectroscopic detection of atoms sputtered by an ion beam. We use semiconductor heterostructures to demonstrate nanoscale lateral and depth resolution and show that it is limited by ion-induced intermixing of nanostructured materials. Sensitivity is demonstrated qualitatively by depth profiling of 3.5, 5, and 8 nm quantum wells and quantitatively by detection of trace-level impurities present at parts-per-million levels. The utility of the FIB-FS technique is demonstrated by characterization of quantum wells and Li-ion batteries. Our work introduces FIB-FS as a high-resolution, high-sensitivity, 3D analysis and tomography technique that combines the versatility of FIB nanofabrication techniques with the power of diffraction-unlimited fluorescence spectroscopy.
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Publisher: Wiley
Date: 17-09-2015
Abstract: Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.
Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
Publisher: American Chemical Society (ACS)
Date: 04-02-2016
Abstract: We report a trion (charged exciton) binding energy of ∼162 meV in few-layer phosphorene at room temperature, which is nearly 1-2 orders of magnitude larger than those in two-dimensional (2D) transition metal dichalcogenide semiconductors (20-30 meV) and quasi-2D quantum wells (∼1-5 meV). Such a large binding energy has only been observed in truly one-dimensional (1D) materials such as carbon nanotubes, whose optoelectronic applications have been severely hindered by their intrinsically small optical cross sections. Phosphorene offers an elegant way to overcome this hurdle by enabling quasi-1D excitonic and trionic behaviors in a large 2D area, allowing optoelectronic integration. We experimentally validated the quasi-1D nature of excitonic and trionic dynamics in phospherene by demonstrating completely linearly polarized light emission from excitons and trions in few-layer phosphorene. The implications of the extraordinarily large trion binding energy in a higher-than-one-dimensional material are far-reaching. It provides a room-temperature 2D platform to observe the fundamental many-body interactions in the quasi-1D region.
Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing
Publisher: AIP Publishing
Date: 09-2023
DOI: 10.1063/5.0153029
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Publisher: AIP Publishing
Date: 16-08-1999
DOI: 10.1063/1.124555
Abstract: Proton implantation and rapid thermal annealing were used to tune the infrared spectral response of quantum-well infrared photodetectors (QWIP) by up to 1.4 μm. Multiple proton implants at energies between 200 and 420 keV were used to create homogeneous quantum-well intermixing throughout the device’s multiple-quantum-well structure. Photoluminescence and spectral response measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5×1015 protons cm−2. By using a mask during implantation, a method of constructing a color sensitive array is proposed.
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Publisher: The Electrochemical Society
Date: 2003
DOI: 10.1149/1.1588304
Perovskite photodetector-based single pixel color camera for artificial vision
Publisher: Springer Science and Business Media LLC
Date: 22-03-2023
DOI: 10.1038/S41377-023-01127-0
Abstract: Narrowband red, green, blue self-filtering perovskite photodetectors and a broadband white photodetector are incorporated into a single pixel imaging camera to mimic the long-, medium-, and short-wavelength cone cells and rod cells in human visual system, leading to the demonstration of high-resolution color images in diffuse mode.
Influence of Electrical Design on Core–Shell GaAs Nanowire Array Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2015
Water Droplet Motion Control on Superhydrophobic Surfaces: Exploiting the Wenzel-to-Cassie Transition
Publisher: American Chemical Society (ACS)
Date: 15-02-2011
DOI: 10.1021/LA104669K
Abstract: Water droplets on rough hydrophobic surfaces are known to exist in two states one in which the droplet is impaled on the surface asperities (Wenzel state) and the other, a superhydrophobic state in which air remains trapped beneath the droplet (Cassie state). Here, we demonstrate that water droplets can transit from the Wenzel-to-Cassie state even though the former is energetically favored. We find that two distinct superhydrophobic states are produced. One is a true Cassie state, whereas the other exhibits superhydrophobicity in the absence of a vapor phase being trapped in the surface roughness. Furthermore, we can selectively drive the motion of water droplets on tilted structured hydrophobic surfaces by exploiting Wenzel-to-Cassie transitions. This can be achieved by heating the substrate or by directly heating the droplet using a laser.
Thermal Annealing Study On InGaAs/GaAs Quantum Dot Infrared Photodetectors
Publisher: IEEE
Date: 2006
Impurity-free disordering of InAs∕InP quantum dots
Publisher: AIP Publishing
Date: 11-06-2007
DOI: 10.1063/1.2748845
Abstract: Impurity-free disordering (IFD) of the InAs quantum dots (QDs) capped with either an InP layer or an InGaAs∕InP bilayer is studied. The s les are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850°C for 30s. A large differential energy shift of 157meV is induced by SiO2 in the QDs capped with an InGaAs∕InP bilayer. Contrary to the reported results on the suppression of intermixing of GaAs based QDs by TiO2, the authors find that intermixing of InAs∕InP QDs is promoted by TiO2. X-ray photoelectron spectroscopy depth profiles show that both In and P outdiffuse to a TiO2 layer whereas Ga, In, and P outdiffuse to a SiO2 layer leading to different degrees of intermixing. The results indicate that a group V interstitial diffusion mechanism might be responsible for IFD of InAs∕InP QDs.
Enhanced Contactless Salt-Collecting Solar Desalination
Publisher: American Chemical Society (ACS)
Date: 13-07-2022
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
Publisher: AIP Publishing
Date: 30-09-2003
DOI: 10.1063/1.1609634
Abstract: In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared photodetector (QDIP) device is studied. Temperatures in the range of 600–800 °C for 60 s, typical of atomic interdiffusion methods are used. After rapid thermal annealing the devices exhibited large dark currents and no photoresponse could be measured. Double crystal x-ray diffraction and cross sectional transmission electron microscopy studies indicate that this could be the result of strain relaxation. V-shaped dislocations which extended across many quantum dot (QD) layers formed in the RTA s les. Smaller defect centers were observed throughout the as-grown s le and are also likely a strain relaxation mechanism. This supports the idea that strained structures containing dislocations are more likely to relax via the formation of dislocations and/or the propagation of existing dislocations, instead of creating atomic interdiffusion during RTA. Photoluminescence (PL) studies also found that Si related complexes developed in the Si doped GaAs contact layers with RTA. The PL from these Si related complexes overlaps and dominates the PL from our QD ground state.
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3NR00340J
Abstract: Wurtzite dominant InAs nanowire arrays with a low density of stacking faults were grown by using selective area metal–organic vapour-phase epitaxy, for the demonstration of high-performance short- and mid-wave infrared photodetector applications.
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Publisher: IOP Publishing
Date: 27-03-2020
Possibility of improved frequency response from intermixed quantum-well devices
Publisher: Elsevier BV
Date: 02-2001
Room temperature GaAsSb single nanowire infrared photodetectors
Publisher: IOP Publishing
Date: 09-10-2015
DOI: 10.1088/0957-4484/26/44/445202
Abstract: Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition
Publisher: IOP Publishing
Date: 05-09-2006
Selective area epitaxial growth of InP nanowire array for solar cell applications
Publisher: IEEE
Date: 12-2014
Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots
Publisher: IEEE
Date: 2002
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Publisher: American Chemical Society (ACS)
Date: 15-08-2014
DOI: 10.1021/NL5021409
Abstract: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
InP nanowires grown by SA-MOVPE
Publisher: IEEE
Date: 12-2012
Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
Publisher: American Chemical Society (ACS)
Date: 12-01-2017
Abstract: Accurate detection of UV light by wearable low-power devices has many important applications including environmental monitoring, space to space communication, and defense. Here, we report the structural engineering of ultraporous ZnO nanoparticle networks for fabrication of very low-voltage high-performance UV photodetectors. A record high photo- to dark-current ratio of 3.3 × 10
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Publisher: IEEE
Date: 12-2014
Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2011
Distinguishing cap and core contributions to the photoconductive terahertz response of single gaas based core–shell–cap nanowire detectors,Apvalkalo ir šerdies indėlių atskyrimas teraherciniame gaas šerdies-kevalo-apvalkalo tipo vieno nanolaido detektoriaus fotolaidumo atsake
Publisher: Lithuanian Academy of Sciences
Date: 28-03-2018
DOI: 10.3952/PHYSICS.V58I1.3648
Abstract: GaAs nanowires are promising candidates for advanced optoelectronic devices, despite their high surface recombination velocity and large surface-area-to-volume ratio, which renders them problematic for applications that require efficient charge collection and long charge-carrier lifetimes. Overcoating a bare GaAs nanowire core with an optimized larger-bandgap AlGaAs shell, followed by a capping layer of GaAs to prevent oxidation, has proven an effective way to passivate the nanowire surface and thereby improve electrical properties for enhanced device performance. However, it is difficult to quantify and distinguish the contributions between the nanowire core and cap layer when measuring the optoelectronic properties of a nanowire device. Here, we investigated the photoconductive terahertz (THz) response characteristics of single GaAs/AlGaAs/GaAs core–shell–cap nanowire detectors designed for THz time-domain spectroscopy. We present a detailed study of the contributions of the GaAs cap layer and GaAs core on the ultrafast optoelectronic performance of the detector. We show that both the GaAs cap and core contribute to the photoconductive signal in proportion to their relative volume in the nanowire. By increasing the cap volume ratio to above 90% of the total GaAs volume, a quasi-direct-s ling type photoconductive nanowire detector can be achieved that is highly desirable for low-noise and fast data acquisition detection.
Analysis of Multi-wavelength Photonic Crystal Single-defect Laser Arrays
Publisher: IEEE
Date: 11-2010
Comparison of interdiffusion between single and stacked-layer InGaAs/GaAs quantum dots
Publisher: IEEE
Date: 2003
The use of strain compensation layers in the growth of stacked quantum dot structures
Publisher: IEEE
Date: 2003
Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
Publisher: American Chemical Society (ACS)
Date: 24-04-2019
Abstract: In this work, we show how domain-engineered lithium niobate can be used to selectively dope monolayer molybdenum selenide (MoSe
Single nanowire terahertz detectors
Publisher: OSA
Date: 2015
Effect of dopants in the spin-on glass layer on the bandgap shift in GaAs/AlGaAs and InGaAs/AlGaAs intermixed quantum wells
Publisher: IEEE
Date: 2000
High power, kink-free 970 nm InGaAs/AlGaAs laser diodes with asymmetric structure
Publisher: IEEE
Date: 2000
Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors
Publisher: Elsevier BV
Date: 11-1999
Systematic review of cross-cultural adaptations of McGill Pain Questionnaire reveals a paucity of clinimetric testing
Publisher: Elsevier BV
Date: 09-2009
DOI: 10.1016/J.JCLINEPI.2009.03.019
Abstract: The objectives of this study were to identify the available cross-cultural adaptations of the McGill Pain Questionnaire (MPQ), to describe the clinimetric testing that has occurred for each adaptation and to evaluate both the quality of the adaptation procedures and the clinimetric testing for each version. This study is a systematic review. Searches of the MEDLINE, EMBASE, and CINAHL databases were used to identify relevant studies. Data on the quality of the adaptation procedures and clinimetric testing were extracted using current guidelines. Forty-four different versions of the MPQ were identified representing 26 different languages/cultures. Regardless of the method of cross-cultural adaptation, clinimetric testing of the adapted questionnaires was generally poorly performed and for 18 versions no clinimetric testing has been undertaken. Although the MPQ has been adapted into a large number of languages, because of inadequate testing most of the adaptations have unknown clinimetric properties. This situation means that users should be cautious when interpreting scores from adapted questionnaires.
Improvement of the kink-free operation in ridge-waveguide laser diodes due to coupling of the optical field to the metal layers outside the ridge
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2003
Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing
Publisher: Wiley
Date: 20-10-2021
Abstract: Chemiresistive sensing is one of the most promising technologies for portable and miniaturized chemical sensing, with applications ranging from air quality monitoring to explosive detection and medical diagnostics. Recently, there have been growing efforts in developing microchip based chemical sensors operating at room temperature with high sensitivity, selectivity, spatial and temporal resolution, long‐term stability, and cost‐effectiveness. Here, the engineering of highly performing miniaturized gas sensors consisting of chemiresistive vertical indium phosphide nanowire (NW) arrays is reported for the first time, and their potential for the selective detection of nitrogen dioxide (NO 2 ), a major air pollutant, is demonstrated. By carefully engineering the NW geometry (i.e., diameter and pitch), a superior sensing performance than those previously reported semiconductor‐based NO 2 sensors is achieved, obtaining a limit of detection of 3.1 ppb at room temperature, with outstanding selectivity, and long‐term stability. Kinetic analysis and electrical simulation further reveal the array geometry correlated sensing mechanism, providing insights for the design of future NW array‐based devices. These findings indicate that, owing to their unique nanoscale structures, material properties, and CMOS compatible manufacture processes, III‐V compound semiconductor NW arrays present a new and promising chemical sensing platform for development of future high performance, miniaturized on‐chip sensing system.
Compound semiconductor optoelectronics research at the Australian National University
Publisher: IEEE
Date: 2005
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
Publisher: American Chemical Society (ACS)
Date: 10-05-2021
Axial p‐n junction design and characterization for InP nanowire array solar cells
Publisher: Wiley
Date: 05-11-2018
DOI: 10.1002/PIP.3083
Carrier transfer and magneto-transport in single modulation-doped V-grooved quantum wire modified by ion implantation
Publisher: Elsevier BV
Date: 07-2006
Photoconductive terahertz receivers utilizing single semiconductor nanowires
Publisher: IEEE
Date: 08-2015
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO 2 Ceramics: Compositional Gradient and Local Structure
Publisher: American Chemical Society (ACS)
Date: 14-07-2015
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Publisher: IOP Publishing
Date: 05-02-2013
Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors
Publisher: Royal Society of Chemistry (RSC)
Date: 2017
DOI: 10.1039/C6NR08425G
Abstract: Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10
Plasmonics for III–V semiconductor solar cells
Publisher: IEEE
Date: 09-2012
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Publisher: The Optical Society
Date: 02-04-2013
DOI: 10.1364/OE.21.00A324
Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2006
Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots
Publisher: AIP Publishing
Date: 28-05-2004
DOI: 10.1063/1.1760886
Abstract: Thermal-stress controlled interdiffusion in InGaAsN/GaAs quantum dots (QDs) has been studied by deposition of titanium oxide (TiO2) layers combined with rapid thermal annealing. Without TiO2 cap layers, blueshifting of the band gap from 1.033 to 1.180 eV at 77 K has been observed after annealing at 850 °C for 30 s due to the thermal interdiffusion. The thermal interdiffusion has been effectively suppressed by depositing TiO2 layers on the s les without degrading the photoluminescence properties. By a combination of annealing temperature and TiO2 thickness, controlled blueshifting of the band gap has been achieved. We suggest that the mechanism of suppression of thermal interdiffusion is the thermal stress imposed on the QD structure generated by TiO2 layers during annealing.
Hypervirulence and cross-resistance to a clinical antifungal are induced by an environmental fungicide in Cryptococcus gattii
Publisher: Elsevier BV
Date: 10-2020
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Publisher: Springer Science and Business Media LLC
Date: 25-07-2023
DOI: 10.1038/S41467-023-40194-0
Abstract: Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.
Quality of silica capping layer and its influence on quantum-well intermixing
Publisher: AIP Publishing
Date: 14-02-2000
DOI: 10.1063/1.125601
Abstract: The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO3(70%):H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si–O–Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950 °C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (& °C) baked s les was similar, and was significantly higher than the low-temperature (210 °C) baked s le. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing.
Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide
Publisher: AIP Publishing
Date: 14-04-2003
DOI: 10.1063/1.1569046
Abstract: In this work, titanium dioxide (TiO2) film was deposited onto the In0.5Ga0.5As/GaAs quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped (but annealed) reference s le, indicating the suppression of thermal interdiffusion due to TiO2 deposition. The structure was also capped with a silicon dioxide (SiO2) single layer or SiO2/TiO2 bilayer with the thickness of SiO2 varied from ∼6 to ∼145 nm. In the former case, an increased amount of impurity-free vacancy disordering (IFVD) was introduced with the increase of SiO2 thickness due to the enhanced Ga outdiffusion into the film. With TiO2 deposited on top, IFVD and thermal interdiffusion were suppressed to different extents with the variation of SiO2 thickness. To explain the suppression of interdiffusion, thermal stress introduced by the large thermal expansion coefficient of TiO2 (when compared with GaAs) as well as the metallurgical reactions between the TiO2 and GaAs were proposed as possible mechanisms.
Toward quantum-dot-based photonic integrated circuits
Publisher: SPIE
Date: 25-03-2005
DOI: 10.1117/12.592313
Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Publisher: AIP Publishing
Date: 20-09-2010
DOI: 10.1063/1.3492836
Abstract: We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.
Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires
Publisher: IOP Publishing
Date: 04-04-2018
Abstract: Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H
Effects of well thickness on the spectral properties of In0.5Ga0.5As∕GaAs∕Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Publisher: AIP Publishing
Date: 12-05-2008
DOI: 10.1063/1.2927487
Abstract: We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5Ga0.5As∕GaAs∕Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.
Plasmonic quantum dot solar cells for enhanced infrared response
Publisher: AIP Publishing
Date: 05-03-2012
DOI: 10.1063/1.3691917
Abstract: Enhanced near infrared photoresponse in plasmonic InGaAs/GaAs quantum dot solar cells (QDSC) is demonstrated. Long wavelength light absorption in the wetting-layer and quantum-dot region of the quantum dot solar cell is enhanced through scattering of light by silver nanoparticles deposited on the solar cell surface. Plasmonic light trapping results in simultaneous increase in short-circuit current density by 5.3% and open circuit voltage by 0.9% in the QDSC, leading to an overall efficiency enhancement of 7.6%.
Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire
Publisher: IOP Publishing
Date: 29-11-2006
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Publisher: Elsevier BV
Date: 04-2018
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Publisher: American Chemical Society (ACS)
Date: 29-05-2019
DOI: 10.1021/ACS.NANOLETT.9B00959
Abstract: We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.
GaAs/AlGaAs core-shell ensemble nanowire photodetectors
Publisher: OSA
Date: 2017
Single nanowire photoconductive terahertz detectors
Publisher: American Chemical Society (ACS)
Date: 18-12-2015
DOI: 10.1021/NL5033843
Abstract: Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to provide important insights in fields as erse as chemical analysis, materials characterization, security screening, and nondestructive testing. However, compact optoelectronics suited to the most powerful terahertz technique, time-domain spectroscopy, are lacking. Here, we implement single GaAs nanowires as microscopic coherent THz sensors and for the first time incorporated them into the pulsed time-domain technique. We also demonstrate the functionality of the single nanowire THz detector as a spectrometer by using it to measure the transmission spectrum of a 290 GHz low pass filter. Thus, nanowires are shown to be well suited for THz device applications and hold particular promise as near-field THz sensors.
Impurity-free vacancy disordering of quantum wells and quantum dots for optoelectronic/photonic integrated circuits
Publisher: IEEE
Date: 09-2004
Merging Photonic Wire Lasers and Nanoantennas
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2011
High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
Publisher: American Chemical Society (ACS)
Date: 11-2018
Abstract: Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe
Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
Publisher: American Chemical Society (ACS)
Date: 03-10-2018
Abstract: III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Publisher: American Chemical Society (ACS)
Date: 14-12-2022
Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Publisher: American Chemical Society (ACS)
Date: 30-08-2021
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