ORCID Profile
0000-0003-2792-7773
Current Organisation
Nanyang Technological University
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Publisher: American Chemical Society (ACS)
Date: 12-07-2017
DOI: 10.1021/ACS.NANOLETT.7B01724
Abstract: Significantly enhanced electric field in plasmonic hot spots can dramatically increase the linear and nonlinear absorption of light, leading to a high-temperature electron gas which radiates, through mainly intraband transition, a broadband luminescence quite similar to blackbody radiation. Here, we demonstrate that such hot-electron intraband luminescence (HEIL) can also be achieved by exploiting the significantly enhanced electric field at the magnetic dipole resonances of gallium arsenide (GaAs) nanospheres (NSs). We show that monocrystalline GaAs NSs with distinct electric and magnetic dipole (ED and MD) resonances can be obtained by using femtosecond laser ablation and annealing. Significantly enhanced second harmonic generation and broadband HEIL are observed when the MD resonances of such GaAs NSs are resonantly excited. The lifetime of the HEIL is found to be as short as ∼82 ps, indicating a significant enhancement in radiative intraband transition rate. We reveal that the slope extracted from the dependence of the HEIL intensity on the irradiance is linearly proportional to the energy of the emitted photon. The existence of distinct ED and MD resonances in combination with a direct bandgap makes GaAs NSs an attractive candidate for constructing novel all-dielectric metamaterials and active photonic devices.
Publisher: Springer Science and Business Media LLC
Date: 27-07-2018
DOI: 10.1038/S41467-018-05394-Z
Abstract: As one of the most important semiconductors, silicon has been used to fabricate electronic devices, waveguides, detectors, solar cells, etc. However, the indirect bandgap and low quantum efficiency (10 −7 ) hinder the use of silicon for making good emitters. For integrated photonic circuits, silicon-based emitters with sizes in the range of 100−300 nm are highly desirable. Here, we show the use of the electric and magnetic resonances in silicon nanoparticles to enhance the quantum efficiency and demonstrate the white-light emission from silicon nanoparticles with feature sizes of ~200 nm. The magnetic and electric dipole resonances are employed to dramatically increase the relaxation time of hot carriers, while the magnetic and electric quadrupole resonances are utilized to reduce the radiative recombination lifetime of hot carriers. This strategy leads to an enhancement in the quantum efficiency of silicon nanoparticles by nearly five orders of magnitude as compared with bulk silicon, taking the three-photon-induced absorption into account.
Publisher: Wiley
Date: 09-2016
Publisher: Wiley
Date: 17-07-2017
Abstract: Data storage with ultrahigh density, ultralow energy, high security, and long lifetime is highly desirable in the 21st century and optical data storage is considered as the most promising way to meet the challenge of storing big data. Plasmonic coupling in regularly arranged metallic nanoparticles has demonstrated its superior properties in various applications due to the generation of hot spots. Here, the discovery of the polarization and spectrum sensitivity of random hot spots generated in a volume gold nanorod assembly is reported. It is demonstrated that the two‐photon‐induced absorption and two‐photon‐induced luminescence of the gold nanorods adjacent to such hot spots are enhanced significantly because of plasmonic coupling. The polarization, wavelength, and spatial multiplexing of the hot spots can be realized by using an ultralow energy of only a few picojoule per pulse, which is two orders of magnitude lower than the value in the state‐of‐the‐art technology that utilizes isolated gold nanorods. The ultralow recording energy reduces the cross‐talk between different recording channels and makes it possible to realize rewriting function, improving significantly both the quality and capacity of optical data storage. It is anticipated that the demonstrated technology can facilitate the development of multidimensional optical data storage for a greener future.
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for Jinxiang Li.