ORCID Profile
0000-0002-7820-1924
Current Organisation
Keio University
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Publisher: Springer Science and Business Media LLC
Date: 17-07-2014
DOI: 10.1038/SREP05727
Publisher: American Physical Society (APS)
Date: 23-07-2012
Publisher: AIP Publishing
Date: 28-03-2015
DOI: 10.1063/1.4916529
Publisher: Informa UK Limited
Date: 30-10-2014
Publisher: AIP Publishing
Date: 06-2014
DOI: 10.1063/1.4881735
Abstract: In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within in idual GeTe layers.
Publisher: AIP Publishing
Date: 06-08-2012
DOI: 10.1063/1.4742919
Publisher: Springer Science and Business Media LLC
Date: 12-02-2016
DOI: 10.1038/SREP20633
Abstract: Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived ( ps) transient metastable state of Ge 2 Sb 2 Te 5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit and improved energy efficiency and reliability of phase-change memory technologies.
Publisher: American Physical Society (APS)
Date: 25-09-2014
Publisher: Wiley
Date: 22-10-2012
Location: United States of America
Location: No location found
Location: Japan
No related grants have been discovered for Paul Fons.