ORCID Profile
0000-0002-0010-8391
Current Organisations
Aruja and Arjun Pty Ltd
,
CSIRO
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Publisher: Elsevier BV
Date: 2004
Publisher: IOP Publishing
Date: 02-02-2005
Publisher: Elsevier BV
Date: 06-2003
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2005
Publisher: Elsevier BV
Date: 08-2003
Publisher: American Physical Society (APS)
Date: 29-09-2008
Publisher: American Vacuum Society
Date: 14-01-2010
DOI: 10.1116/1.3276801
Abstract: Epitaxial Ta films were grown on c-cut and r-cut sapphire substrates using magnetron sputtering. X-ray diffraction measurements indicate that the Ta films grown on c-cut sapphire substrates have two different crystal orientations. Low vacuum base pressure produced films with the (111) plane parallel to the basal plane after an initial (110) plane growth phase, whereas high base pressure resulted in the growth of (110) plane parallel to the basal plane with three azimuthally oriented domains coexisting. The superconducting critical temperatures Tc of the films grown on c-cut substrates were found to be slightly higher than those for the films grown on r-cut substrates. The x-ray photoelectron spectroscopic data show oxygen content in the high vacuum base pressure deposited films and a difference in the valance band with different Ta surface planes.
Publisher: Elsevier BV
Date: 07-2000
Publisher: IOP Publishing
Date: 20-06-2005
Publisher: Elsevier BV
Date: 06-2001
Publisher: IOP Publishing
Date: 19-01-2005
Publisher: AIP Publishing
Date: 27-03-2002
DOI: 10.1063/1.1464657
Abstract: For milling over large areas there is need for broad ion beam sources with a uniform etch rate profile. Currently uniform ion beam density is obtained in the central portion of the ion source by manipulating the grids and the magnets in the ion source. We have designed and implemented specially shaped hard masks to a rotating substrate holder. This mask is able to transform the Gaussian etch rate profile of a 150-mm-diam Oxford ion source to a flat profile. The flat profile decreases the etch rate in the central portion while maintaining the same etch rate along the edge. The deviation in the ion beam etch rate is within 5% in the flat region.
Publisher: American Physical Society (APS)
Date: 15-01-1986
Publisher: Elsevier BV
Date: 11-2000
Publisher: Elsevier BV
Date: 05-2003
Publisher: IOP Publishing
Date: 14-05-2009
Publisher: Elsevier BV
Date: 04-2006
Publisher: AIP Publishing
Date: 15-03-2007
DOI: 10.1063/1.2495937
Abstract: An optically transparent and electrically conducting oxide Ta2O epitaxial thin film has been fabricated and characterized. In our experiments, we grew epitaxial Ta films on r-cut sapphire crystal substrates, which were subsequently oxidized into Ta2O films. The x-ray θ-2θ scan peaks match the American Society for Testing and Materials x-ray powder data card for Ta2O (18-1302) with a cubic structure. The x-ray photoelectron spectroscopic measurements indicated Ta 4f peak energy values between those for Ta and TaO whereas the O∕Ta atomic ratio is between 0.5 and 1. Resistivity-temperature measurements showed a metallic behavior with resistivity values in the range of (1.5–3.3)×10−4Ωcm at 293K. Optical measurements on 25–100nm thick films indicated that they are transparent in the range of 400–2000nm and have an energy band gap between 2.04 and 2.17eV. The Hall mobility and carrier density of the films were in the range of 62–110cm2V−1s−1 and (1.9–3.0)×1020cm−3, respectively.
Publisher: Elsevier BV
Date: 08-1999
Publisher: Elsevier BV
Date: 08-2009
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2005
Publisher: Elsevier BV
Date: 04-2003
Publisher: Elsevier BV
Date: 11-2000
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2003
Publisher: American Vacuum Society
Date: 25-04-2008
DOI: 10.1116/1.2909971
Abstract: The evolution of the tantalum oxide structure during low pressure thermal oxidation of epitaxial Ta films on a sapphire substrate was investigated. Thin Ta films were deposited using magnetron sputtering on sapphire substrates at a temperature of 700°C. Thermal oxidation of these films in oxygen at a pressure of 1.0Pa at a temperature of 700°C produced epitaxial Ta2O and Ta2O5 films as determined by x-ray diffraction techniques. The epitaxial Ta2O film had a cubic structure with a (101) plane oriented in the substrate plane. The epitaxial Ta2O5 films had a twinned orthorhombic structure with a (201) plane oriented in the substrate plane.
Publisher: AIP Publishing
Date: 22-07-2003
DOI: 10.1063/1.1595718
Abstract: Yttria-stabilized zirconia (YSZ) is used as an insulating barrier for the fabrication of niobium edge junctions. Using the ion beam assisted deposition technique, Nb/YSZ/Nb edge junctions with YSZ thin film of a few nanometers in thickness have been fabricated. The junctions are nonhysteretic with critical current densities up to 4 mA/μm2 and critical current normal resistance products of ∼1 mV.
No related grants have been discovered for Sabaratnasingam Gnanarajan.