ORCID Profile
0000-0002-4738-1088
Current Organisations
Utrecht University
,
Universiteit Utrecht
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Publisher: AIP Publishing
Date: 1996
DOI: 10.1063/1.116751
Abstract: Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.
Publisher: AIP Publishing
Date: 12-02-1996
DOI: 10.1063/1.116124
Abstract: Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.
Publisher: American Physical Society (APS)
Date: 15-11-1998
Publisher: Elsevier BV
Date: 10-2018
Publisher: Elsevier BV
Date: 04-1986
Publisher: Elsevier BV
Date: 09-2015
Publisher: Elsevier BV
Date: 2022
Publisher: IEEE
Date: 06-2019
No related grants have been discovered for Wilfried van Sark.