ORCID Profile
0000-0002-6832-906X
Current Organisation
Shanghai Jiao Tong University
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Publisher: American Chemical Society (ACS)
Date: 02-03-2020
Publisher: American Chemical Society (ACS)
Date: 03-09-2013
DOI: 10.1021/NL402180K
Abstract: Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
Publisher: Wiley
Date: 22-07-2016
DOI: 10.1002/EEJ.22871
Publisher: American Association for the Advancement of Science (AAAS)
Date: 04-08-2017
Abstract: Direct visualization of superfast ballistic and diffusive gold nanoparticles driven by photoinduced nanobubbles.
Publisher: American Chemical Society (ACS)
Date: 23-09-2021
Publisher: Springer Science and Business Media LLC
Date: 31-08-2012
Abstract: InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline s le surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.
Publisher: American Chemical Society (ACS)
Date: 08-09-2022
Publisher: American Chemical Society (ACS)
Date: 25-08-2021
Publisher: AIP Publishing
Date: 13-01-2014
DOI: 10.1063/1.4859915
Abstract: Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.
Publisher: American Chemical Society (ACS)
Date: 07-06-2023
Publisher: Oxford University Press (OUP)
Date: 08-12-2016
Abstract: Surface defects with intrinsic origins in an epitaxial layer on 4H-SiC wafers were observed by scanning electron microscopy. Commercially available 4H-SiC epitaxial wafers with 4° or 8° off-axis angles from the [0001] direction toward the [112¯0] direction were used in this experiment. Various types of defects, including micropipes, pits, carrots, stacking faults and wide terrace and high step structures, were observed and clearly identified. The defects are presented as a catalog that can be used in the identification of surface defects.
Publisher: Oxford University Press (OUP)
Date: 08-12-2016
Abstract: Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [112¯0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
Publisher: AIP Publishing
Date: 06-2009
DOI: 10.1063/1.3129583
Abstract: Transition-metal impurities gettered by grain boundaries (GBs) act as recombination centers of carriers and are regarded to be harmful defects in multicrystalline silicon (mc-Si) used for solar cell production. In this study, gettering of iron by Σ3 GBs in mc-Si was investigated by using transmission electron microscopy and annular dark-field (ADF) imaging. In the clean specimen, both straight Σ3{111} GB and zig-zag Σ3{110}, {112} GBs are not electrically active, whereas the zig-zag Σ3{110}, {112} GBs become electrically active when contaminated with iron. ADF images have shown that iron is preferentially gettered at the irregular parts of zig-zag Σ3{112} GB and exists in the form of clusters. The iron gettering abilities of these Σ3 GBs have been discussed.
Publisher: American Chemical Society (ACS)
Date: 13-08-2021
Publisher: American Association for the Advancement of Science (AAAS)
Date: 06-07-2018
Abstract: Lorentz imaging shows hidden states and switching behavior of magnetic vortices under rapid optical excitation and quenching.
Publisher: Proceedings of the National Academy of Sciences
Date: 20-11-2017
Abstract: Imaging chemical hysical reaction dynamics at nanoscale interfaces of a composite nanostructure requires resolutions in both space and time. Using single-pulse methodology, we directly and visually capture the irreversible eutectic-related phase reactions of a single, same metal/semiconductor nanowire at nanometer–nanosecond spatiotemporal resolution by 4D electron microscopy. With a nondestructive free-standing s le preparation free from environmental disturbance that is important for statistical investigation, we have both qualitatively and quantitatively elucidated the transient phase reactions and obtained important physical properties of the newly formed phases, such as latent heat and specific heat. Our work provides an efficient way of quantitatively determining physical properties of a nanoscale object with a tiny small quantity, especially when not available in bulk counterparts.
Publisher: American Chemical Society (ACS)
Date: 06-03-2023
Publisher: Springer Science and Business Media LLC
Date: 15-05-2015
DOI: 10.1038/SREP10087
Abstract: By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.
Publisher: Elsevier BV
Date: 11-2013
Publisher: American Chemical Society (ACS)
Date: 24-01-2019
DOI: 10.1021/ACS.NANOLETT.8B03870
Abstract: Nanoeutectic phase reaction covers the fundamental study of a chemical and physical reaction of multiple phases at the nanoscale. Here, we report the direct visualization of phase-reaction dynamics in Au/GaAs nanowires (NWs) using four-dimensional (4D) electron microscopy. The NW phase reactions were initiated with a pump laser pulse, while the following dynamics in the Au/GaAs NW was probed by a precisely time-delayed electron pulse. Single-pulse imaging reveals that the cubic zinc-blende NW presents a transient length increase within the time duration of ∼150 ns, giving the appearance of intermediate phase reactions at an early stage. A final length reduction of the NW is observed after the phase reactions have fully ended. In contrast, only length reduction is seen throughout the entire process in GaAs/AlGaAs core-shell and hexagonal wurtzite GaAs NWs. The reasons for the above intriguing phenomena are discussed. The eutectic-related phenomena in both zinc-blende and wurtzite materials offer a comprehensive understanding of phase-reaction dynamics in polytypic structures commonly available in compound semiconductors.
Publisher: American Chemical Society (ACS)
Date: 16-03-2023
Publisher: American Chemical Society (ACS)
Date: 18-03-2021
Publisher: AIP Publishing
Date: 15-09-2008
DOI: 10.1063/1.2983649
Abstract: We report the correlation between residual strain and electrically active grain boundaries (GBs) in multicrystalline silicon. The former concerns the process yield, and the latter affects the solar cell efficiency. The distribution of strain was imaged by scanning infrared polariscope, and the electrically active GBs were characterized by electron-beam-induced current. Large strain was detected near multitwin boundaries and small-angle GBs. The multitwin boundaries are electrically inactive, while small-angle GBs act as strong recombination centers. It indicates that the electrical activities of GBs are not directly related to the residual strain.
Publisher: Informa UK Limited
Date: 14-04-2014
Publisher: American Association for the Advancement of Science (AAAS)
Date: 03-02-2017
Abstract: Advances in microscopy techniques aim to make it possible to study materials under more realistic conditions, such as in liquid cells, or to use fast probes to capture dynamics. Fu et al. combined liquid cell transmission electron microscopy with ultrafast pump-probe spectroscopy to perform time-resolved studies of nanoscale objects (see the Perspective by Baum). They successfully captured the change in rotational dynamics of coupled gold nanoparticles and also observed the dynamics as two particles fused together in a liquid environment. Science , this issue p. 494 see also p. 458
Publisher: AIP Publishing
Date: 16-03-2009
DOI: 10.1063/1.3099001
Abstract: Dislocation-related luminescence from small-angle grain boundaries (SA-GBs) in multicrystalline Si was investigated by cathodoluminescence. D3 and D4 emissions were detected at SA-GBs with a misorientation angle of around 1°–1.5°, and D1 and D2 at SA-GBs with a misorientation angle of around 2°–2.5°. Electron beam-induced current investigations indicate that the former SA-GBs possess only shallow energy levels, while the latter possess both deep and shallow levels. The origins of D-line luminescence at SA-GBs are discussed in terms of dislocation structures.
Publisher: American Chemical Society (ACS)
Date: 13-06-2013
DOI: 10.1021/NL401175T
Abstract: The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale d ing applications.
Publisher: Elsevier BV
Date: 10-2013
Publisher: Springer Science and Business Media LLC
Date: 27-02-2014
DOI: 10.1038/SREP04211
Abstract: As one of the most important two-dimensional (2D) materials, BN nanosheets attracted intensive interest in the past decade. Although there are many methods suitable for the preparation of BN sheets, finding a cheap and nontoxic way for their mass and high-quality production is still a challenge. Here we provide a highly effective and cheap way to synthesize gram-scale-level well-structured BN nanosheets from many common graphite products as source materials. Single-crystalline multi-layered BN sheets have a mean lateral size of several hundred nanometers and a thickness ranging from 5 nm to 40 nm. Cathodoluminescence (CL) analysis shows that the structures exhibit a near band-edge emission and a broad emission band from 300 nm to 500 nm. Utilization of nanosheets for the reinforcement of polymers revealed that the Young's modulus of BN/PMMA composite had increased to 1.56 GPa when the BN's fraction was only 2 wt.%, thus demonstrating a 20% gain compared to a blank PMMA film. It suggests that the BN nanosheet is an ideal mechanical reinforcing material for polymers. In addition, this easy and nontoxic substitution method may provide a universal route towards high yields of other 2D materials.
Location: United States of America
Location: Japan
No related grants have been discovered for Bin Chen.