ORCID Profile
0000-0002-3725-2565
Current Organisation
University of Nottingham
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Publisher: IOP Publishing
Date: 02-05-2014
DOI: 10.1088/0957-4484/25/21/215705
Abstract: The composition of InxGa1 - xN nanorods grown by molecular beam epitaxy with nominal x = 0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure with a near-atomically sharp boundary between a Ga-rich shell (x ∼ 0.3) and an In-rich core (x ∼ 0.7), which itself has In- and Ga-rich platelets alternating along the growth axis. It is proposed that the shell and core regions are lateral and vertical growth sectors, with the core structure determined by spinodal decomposition.
Publisher: IOP Publishing
Date: 19-03-2021
Abstract: Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong dependence of the morphology, including the dominant crystallographic edge, of the hBN monolayers, on the growth temperature, as well as systematic variations in growth rate and coverage, and significant differences in the growth at monolayer and multilayer graphite steps. At graphite monolayer steps hBN grows laterally across the surface on the lower terrace, but hBN growth on the upper side of the graphite step is more limited and is nucleated by three-dimensional clusters. Multilayer graphite steps exhibit a much higher density of non-planar hBN aggregates and growth on both the upper and lower terraces occurs. The results show that the hBN monolayer growth edge type, hBN island shape and the presence of hBN aggregates can be controlled in HT-MBE, with the highest quality layers grown at a substrate temperature of about 1390 °C. Sequential HT-MBE growth of hBN, graphene (G) and a second cycle of hBN growth results in the formation of monolayer thick lateral hBN–G–hBN heterostructures, in which a strip of G is embedded between monolayers of hBN.
Publisher: Elsevier BV
Date: 2014
Publisher: IOP Publishing
Date: 15-10-2015
Publisher: Wiley
Date: 05-10-2023
Publisher: Elsevier BV
Date: 12-2013
Publisher: IOP Publishing
Date: 30-07-2018
Abstract: Two In
Publisher: Wiley
Date: 28-01-2014
Abstract: This paper demonstrates the growth of InGaN nanorods and lateral growth over nanorod arrays using molecular beam epitaxy. It is shown that nitrogen rich growth conditions result in a nanorod array and that, by changing to metal rich conditions, lateral growth may be enhanced to coalesce the nanorods into a continuous overgrown film. Energy dispersive X‐ray spectroscopy has been used to demonstrate that the nanorods display a core‐shell structure with In‐rich cores and In‐poor edges. Transmission Electron Microscopy has shown that the nanorods are free of dislocations. However, when lateral growth occurs basal plane stacking faults are generated. It is shown that this stacking fault generation leads to a change in structure from hexagonal to cubic. When coalescence has occurred large angle grain boundaries are present. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Publisher: IOP Publishing
Date: 29-11-2013
Publisher: IOP Publishing
Date: 29-06-2023
Abstract: Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High-resolution atomic force microscopy (AFM) reveals that GNRs grow epitaxially from the etched hBN edges, and merge to form a GNR network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.
Publisher: Springer Science and Business Media LLC
Date: 02-11-2020
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for Sergei Novikov.