ORCID Profile
0000-0001-9427-0383
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Publisher: Wiley
Date: 29-01-2013
Abstract: Silicon nanopillars with average diameters from 200 to 900 nm and heights from 0.5 to 3 μm have been successfully fabricated by cesium chloride (CsCl) self‐assembly lithography and dry etching as antireflection layer for solar cells. The antireflection and photovoltaic characteristics for the structures of silicon nanopillars have been researched and show that the reflectivity, photovoltaic conversion efficiency (PCE), and external quantum efficiency (EQE) are greatly influenced by the average diameter and height of nanopillars. The nanopillars with small diameters and large heights can supress reflection, but have less‐favorable photovoltic properties because of greater surface recombination and a greater number of lattice defects. The lowest reflectivity was achieved for silicon nanopillars of 200 nm average diameter and 1.5 μm height, for which the reflectivity was below 5 % between the wavelengths of 400 and 1000 nm, and the solar cell with silicon nanopillars of 600 nm average diameter and 1.5 μm height exhibited the best solar cell performance with a PCE of 14.83 %, a short‐circuit current density ( J sc ) of 36.89 mA cm −2 , and an open‐circuit voltage ( V oc ) of 542 mV.
Publisher: American Scientific Publishers
Date: 2015
Abstract: A simple fabrication technology for both nanoscrews and nanoholes by Cesium Chloride (CsCI) self-assembly lithography and dry etching on silicon substrates is demonstrated. The porous Al template ranging from 400 nm to 2 μm average diameter is formed by lift-off the CsCl nanoislands in DI water as the ICP etching masks for nanoholes. Nanoscrews and nanoholes of desired height/depth from 1.2 to 4 μm are obtained by this method. The reflectance of nanoscrew and nanohole structures can achieve below 5% from wavelength of 400 to 1000 nm which is much lower than that of pyramid but the performance of pyramid solar cells is the best. Results show that the performance of nanoscrew and nanohole solar cells is strongly affected by some other factors such as surface passivation and electrode-contact property. Therefore, not only the antireflection advantage but also the surface passivation and improving the electrode-contact property should be considered together to improve nanostructure solar cells photovoltaic performance.
Publisher: Elsevier BV
Date: 02-2015
Publisher: Wiley
Date: 31-03-2017
Publisher: IOP Publishing
Date: 10-07-2017
Publisher: Trans Tech Publications, Ltd.
Date: 07-2011
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.694.375
Abstract: a method combining Csesium Chloride (CsCl) self-assembly and inductively coupled plasma (ICP) etching has been used to fabricate nanopillars with high aspect ratio structures on sillicon wafer. The silicon surface with nanopillars of average diameter 350nm and aspect ratios 4, like black wafer, has very low reflectivity at a width of light spectrum. After diffusion of phosphorus (P) and passivation of SiO2 layer on the pillars surface, the reflectivity has been reduced more to below 3% for wavelength from 400nm to 800nm, which could meet the requirement of antireflection for solar cells. What’s more, the reflectivity of nanopillar surface could not obey the formula of reflection to increase with the incident angle of light like planar, and has almost unchanged small values at incident angle of 10°-50°. The solar cell with nanopillars has been fabricated with thermal diffusion of P, chemical deposion of Cu electrode with UV lithography. Its I×V output power of photoelectric property has been measured with sunlight at different time in one day corresponding to different incident angle, and measure of common solar cell is done at the same time for comparation. In order to select the inflection factor of incident angle, the data of output power have been united by iding max value for nanopillar and common solar cells in idually. The united curve of nanopillars cell shows obviously larger value than that of common cell at above incident angle of about 15°, which means nanopillars cell could have the potential ability to offer more electric energy production daily than that of common solar cell.
Publisher: Wiley
Date: 13-07-2017
Publisher: IEEE
Date: 06-2017
Publisher: AIP Publishing
Date: 28-03-2016
DOI: 10.1063/1.4945594
Abstract: We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the s le. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 1016 cm−3. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 1018 cm−3. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.
Publisher: Elsevier BV
Date: 10-2011
Publisher: The Optical Society
Date: 10-01-2011
DOI: 10.1364/OE.19.001065
Publisher: Trans Tech Publications, Ltd.
Date: 2009
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.60-61.367
Abstract: We use two-dimensional FDTD (Finite difference time domain) method to simulate light transmitting in Si nano-pillar arrays and get some results. The Si nano-pillar array, with diameters, heights, intervals respectively 50-80nm, less than 480nm, 26-44nm, is used as the testifying structure. The reflectivities of both experiment and simulation match well either for bulk silicon or for structure silicon even though small deviations are caused by the uneven size of the pillar’s diameters, heights, and intervals. What’s more, we find reflectivity (ref) increases along with diameter’s (d) increasing for a single pillar with diameters of 20-100nm under a constant light of 600nm, and reaches 10.48% at d=100nm. And with a constant d equal to 20nm, an infinite aspect ratio (r) and a light 600nm, ref is decreasing when the intervals (i) of pillars are increasing. Finally, under the condition of different i, the relations between ref and r are investigated. The undulation of these curves shows that the reflective waves play an important role in sub-wave length optics. Analysis also reveals that there exists a best i for achieving the lowest ref, too large or too small i will cause high ref, even if r is great moreover, the lager i is, the higher pillar is needed to achieve the lowest ref.
Publisher: Elsevier BV
Date: 2012
Publisher: Elsevier BV
Date: 12-2018
Publisher: AIP Publishing
Date: 07-12-2015
DOI: 10.1063/1.4937270
Abstract: Though Ge crystallization has been widely studied, few works investigate metal-induced crystallization of ultrathin Ge films. For 2 nm Ge films in oxide matrix, crystallization becomes challenging due to easy oxidation and low mobility of Ge atoms. Introducing metal atoms may alleviate these problems, but the functions and the behaviours of metal atoms need to be clarified. This paper investigates the crystallization dynamics of a multilayer structure 1.9 nm Ge/0.5 nm Al/1.5 nm Al2O3 under rapid thermal annealing (RTA). The functions of metal atoms, like effective anti-oxidation, downshifting Raman peaks, and incapability to decrease crystallization temperature, are found and explained. The metal behaviours, such as inter-diffusion and defect generation, are supported with direct evidences, Al-Ge nanobicrystals, and Al cluster in Ge atoms. With these understandings, a two-step RTA process achieves high-quality 2 nm nanocrystal Ge films with Raman peak at 298 cm−1 of FWHM 10.3 cm−1 and atomic smooth interfaces.
Publisher: Elsevier BV
Date: 04-2015
Publisher: Elsevier BV
Date: 02-2012
Publisher: IEEE
Date: 06-2019
Publisher: IOP Publishing
Date: 25-10-2010
DOI: 10.1088/0957-4484/21/46/465302
Abstract: We introduce a method combining cesium chloride self-assembly and inductively coupled plasma to fabricate nanopillars with uniform coverage over an entire 4 inch prepatterned silicon wafer. This method can produce pillars with average diameters ranging from 50 nm to 1.5 µm, aspect ratios up to 13 and coverage ratios above 35%. Cesium chloride self-assembly utilizes the deliquescence of salt, with advantages of excellent tunability, high aspect ratio and potential for micro/nano mixed structures, which makes this technology promising in the areas of MEMS, solar cells, batteries, light emitting diodes, etc.
Publisher: IOP Publishing
Date: 11-2013
Publisher: WIP
Date: 2014
Location: China
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for Yuanxun Liao.