ORCID Profile
0000-0003-0897-227X
Current Organisation
Institute of Materials Research and Engineering
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Publisher: Elsevier BV
Date: 2003
Publisher: Elsevier BV
Date: 10-2011
Publisher: IEEE
Date: 2010
Publisher: IEEE
Date: 2010
Publisher: American Vacuum Society
Date: 03-2010
DOI: 10.1116/1.3327925
Abstract: Suspended waveguides have been widely applied to silicon-on-insulator structures because they are easily fabricated with processing techniques similar to those of integrated circuit design. However, it is difficult to fabricate such structures in lithium niobate, which is also a very important material for optoelectronics. One main challenge is the difficulty of etching lithium niobate. In this work, the authors show a method to fabricate suspended slab waveguides in lithium niobate by combining ion implantation, focused ion beam milling, and selective wet etching techniques. The method does not involve wafer bonding or crystal ion slicing and is entirely monolithic. Lattice damage can be introduced to a buried thin layer of a certain depth beneath the s le surface by ion implantation, resulting in a considerable wet etching selectivity to bulk material. The etching rate has been investigated to control the size of the suspended membrane. Fabrication of suspended photonic crystal waveguides has also been demonstrated. The results show an effective method of fabricating suspended devices in lithium niobate, which enables new applications such as waveguides, modulators, and infrared detectors.
Publisher: Elsevier BV
Date: 10-2011
Publisher: SPIE
Date: 09-02-2012
DOI: 10.1117/12.908228
Publisher: Elsevier BV
Date: 07-2001
Publisher: Wiley
Date: 22-08-2015
Publisher: American Chemical Society (ACS)
Date: 18-12-2019
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C3NR05502G
Abstract: We report an alternative method of producing sub-30 nm thick silver films and structures with ultralow loss using gas cluster ion beam irradiation (GCIB). We have direct evidence showing that scattering from grain boundaries and voids rather than surface roughness are the main mechanisms for the increase in loss with reducing thickness. Using GCIB irradiation, we demonstrate the ability to reduce these scattering effects simultaneously through nanoscale surface smoothing, increase in grain width and lower percolation threshold. Significant improvement in electrical and optical properties by up to 4 times is obtained, before deviation from bulk silver properties starts to occur at 12 nm. We show that this is an enabling technology that can be applied post fabrication to metallic films or lithographically patterned nanostructures for enhanced plasmonic performance, especially in the ultrathin regime.
Publisher: Wiley
Date: 23-12-2005
Publisher: IOP Publishing
Date: 12-05-2008
Publisher: Optica Publishing Group
Date: 13-04-2010
DOI: 10.1364/OE.18.008816
Publisher: Springer Science and Business Media LLC
Date: 04-12-2007
Publisher: Optica Publishing Group
Date: 08-10-2009
DOI: 10.1364/OL.34.003142
Publisher: SPIE
Date: 07-02-2008
DOI: 10.1117/12.762771
Publisher: American Chemical Society (ACS)
Date: 16-02-2017
Publisher: Springer Science and Business Media LLC
Date: 24-08-2014
Publisher: Elsevier BV
Date: 07-2007
Publisher: The Electrochemical Society
Date: 2005
DOI: 10.1149/1.2032347
Publisher: AIP Publishing
Date: 08-11-2004
DOI: 10.1063/1.1815058
Abstract: We have fabricated light emitting porous silicon micropatterns with controlled emission intensity. This has been achieved by direct write irradiation in heavily doped p-type silicon (0.02Ωcm) using a 2MeV proton beam, focused to a spot size of 200nm. After electrochemical etching in hydrofluoric acid, enhanced photoluminescence is observed from the irradiated regions. The intensity of light emission is proportional to the dose of the proton beam, so the PL intensity of the micropattern can be tuned and varied between adjacent regions on a single substrate. This behavior is in contrast to previous ion beam patterning of p-type silicon, as light is preferentially created as opposed to quenched at the irradiated regions.
Publisher: The Optical Society
Date: 03-10-2012
DOI: 10.1364/OE.20.023898
Publisher: AIP Publishing
Date: 08-07-2019
DOI: 10.1063/1.5109290
Abstract: Cross-sectional Raman hotoluminescence hyperspectral imaging was employed to study the formation and annealing behavior of optical centers in diamond, which was implanted by a focused 2 MeV proton beam. The resulting compact implantation profiles, together with the submicron spatial resolution of the hyperspectral imaging technique, produced detailed distributions of the nitrogen-vacancy centers and the TR12 center. In addition, cluster analysis was used to identify a split in the implantation end of range into two subregions, each with its own characteristic emission spectrum centered at 543 nm and 552 nm. We demonstrate that our analysis methodology on the hyperspectral dataset, paired with the use of focused beam implantation, provides a renewed understanding of defect formation and lattice damage in ion-implanted single crystal diamond.
Publisher: SPIE
Date: 09-02-2012
DOI: 10.1117/12.908319
Publisher: SPIE
Date: 11-02-2010
DOI: 10.1117/12.841692
Publisher: Elsevier BV
Date: 08-2004
Publisher: Elsevier BV
Date: 04-2005
Publisher: Elsevier BV
Date: 04-2005
Publisher: Elsevier BV
Date: 06-2009
Publisher: American Vacuum Society
Date: 03-2011
DOI: 10.1116/1.3557027
Abstract: Lithium niobate (LiNbO3, LN) is an important material which is widely applied in fabricating photonic and acoustic devices. However, it is difficult to either wet etch or dry etch LN due to the material’s properties. Here, the authors report novel pattern fabrication based on LN using focused ion beam (FIB) milling. When an array of small holes is etched, a severe tapering problem is observed as is common, but by replacing the nanocylindrical hole array with a nanoring structure, the authors obtain photonic crystals with an aspect ratio of up to 50:1 (2 μm total etching depth and 40 nm gap aperture). Dense nanorod arrays with sub-30-nm ultrasmall gaps and more than 2.5 μm etching depth are also achieved with FIB milling.
Publisher: Elsevier BV
Date: 02-2013
Publisher: World Scientific Pub Co Pte Lt
Date: 06-2005
DOI: 10.1142/S0219581X05003139
Abstract: To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master st s in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic st s of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.
Publisher: Springer Science and Business Media LLC
Date: 08-2006
No related grants have been discovered for Ee Jin Teo.