ORCID Profile
0000-0003-3610-981X
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Publisher: AIP Publishing
Date: 18-10-2010
DOI: 10.1063/1.3502483
Abstract: The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by {112̱1} planes, whereas the dodecagons are bounded by {101̱1} and {112̱1} planes, where the {101̱1} facets are generated from the edges between adjacent {112̱1} planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.
Publisher: AIP Publishing
Date: 17-12-2012
DOI: 10.1063/1.4772633
Abstract: GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.
Publisher: Wiley
Date: 22-12-2010
Publisher: AIP Publishing
Date: 23-03-2009
DOI: 10.1063/1.3108084
Abstract: Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1×1013 cm−2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.
Publisher: Oxford University Press (OUP)
Date: 07-2009
DOI: 10.1017/S1431927609097499
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Location: Switzerland
No related grants have been discovered for Nicolas Grandjean.