ORCID Profile
0000-0002-7154-641X
Current Organisations
UMI MajuLab
,
Yokohama City University
,
UCA (Université Côte d'Azûr)
,
Nanyang Technological University School of Physical and Mathematical Sciences
,
CNRS
,
Gifu University
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Publisher: American Physical Society (APS)
Date: 24-06-2010
Publisher: AIP Publishing
Date: 17-11-2008
DOI: 10.1063/1.3032911
Abstract: The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
Publisher: Japanese Society of Breeding
Date: 2009
DOI: 10.1270/JSBBS.59.529
Publisher: American Physical Society (APS)
Date: 29-10-2008
Publisher: American Physical Society (APS)
Date: 15-01-2009
Publisher: American Physical Society (APS)
Date: 12-05-2009
Publisher: American Physical Society (APS)
Date: 15-01-2014
Publisher: Elsevier BV
Date: 07-2007
Publisher: AIP Publishing
Date: 14-01-2013
DOI: 10.1063/1.4775691
Abstract: Temperature-dependent optical absorption, Hall effect, and infrared reflectance measurements have been performed on as-grown and post-growth annealed CdO films grown by metal organic vapor phase epitaxy on sapphire substrates. The evolution of the absorption edge and conduction electron plasmon energy with temperature has been modeled, including the effects arising from the Burstein-Moss shift and bandgap renormalization. The zero-temperature fundamental direct bandgap and band edge effective mass have been determined to be 2.31 ± 0.02 eV and 0.27±0.01m0, respectively. The associated Varshni parameters for the temperature dependence of the bandgap are found to be α=8×10−4 eV/K and β=260 K.
Publisher: Wiley
Date: 28-03-2023
Abstract: Full wavefront control by photonic components requires that the spatial phase modulation on an incoming optical beam ranges from 0 to 2π. Because of their radiative coupling to the environment, all optical components are intrinsically non‐Hermitian systems, often described by reflection and transmission matrices with complex eigenfrequencies. Here, it is shown that parity or time symmetry breaking—either explicit or spontaneous—moves the position of zero singularities of the reflection or transmission matrices from the real axis to the upper part of the complex frequency plane. A universal 0 to 2π‐phase gradient of an output channel as a function of the real frequency excitation is thus realized whenever the discontinuity branch bridging a zero and a pole, that is, a pair of singularities, is crossing the real axis. This basic understanding is applied to engineer electromagnetic fields at interfaces, including, but not limited to, metasurfaces. Non‐Hermitian topological features associated with exceptional degeneracies or branch cut crossing are shown to play a surprisingly pivotal role in the design of resonant photonic systems.
Publisher: AIP Publishing
Date: 14-01-2008
DOI: 10.1063/1.2833269
Abstract: The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02eV and 0.21±0.01m0 respectively.
Publisher: American Physical Society (APS)
Date: 11-04-2014
Location: Japan
Location: Singapore
Location: Germany
No related grants have been discovered for Jesus Zuniga-Perez.