ORCID Profile
0000-0002-5462-0753
Current Organisations
Chulalongkorn University
,
Chulalongkorn University Faculty of Science
Does something not look right? The information on this page has been harvested from data sources that may not be up to date. We continue to work with information providers to improve coverage and quality. To report an issue, use the Feedback Form.
Publisher: Elsevier BV
Date: 11-2022
Publisher: AIP Publishing
Date: 15-03-2002
DOI: 10.1063/1.1448886
Abstract: Epitaxial aluminum nitride thin films have been grown on silicon carbide (6H-SiC) substrates by pulsed low-energy ion-assisted reactive magnetron sputter deposition (+5/−20 V of bias pulses), with ion-assisted energy (Ei)≅22 eV, under ultrahigh-vacuum conditions. Surface ion interactions during the negative bias pulse gave rise to enhanced surface mobility of adatoms with beneficial effects, which extended over the limit of ion repelling in the positive pulse as the film thickness increased. High-resolution electron microscopy shows that a large (& nm) AlN domain width can form on the substrate. Domain-boundary annihilation and domain suppression during film growth have been observed. The growth rate also increased by a factor of ∼4 compared to growth conditions with no ion assistance (Ei=2 eV) and by a factor of 2 from dc ion-assisted growth. This indicates that the supply of nitrogen is a limiting factor for AlN formation and that the reactivity of nitrogen is increased on the growing AlN film surface for pulse ion-assisted deposition. High-resolution x-ray diffraction shows a reduction in the full width at half maximum of the rocking curve from 1490 to 1180 arcsec when pulsed ions are used. The cathodoluminescence shows high intensity of near-band edge emissions at wavelengths of 206 (6.02 eV) and 212 nm (5.84 eV) at a measured temperature of 5 K, with relatively low defect and oxygen and carbon impurity related emission, which is indicative of a high quality electronic material.
Publisher: Wiley
Date: 11-04-2005
Publisher: Elsevier BV
Date: 09-2001
Publisher: AIP Publishing
Date: 15-12-2006
DOI: 10.1063/1.2402971
Abstract: Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)‖Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15° with respect to each other: AlN⟨112¯0⟩‖Si[110], AlN⟨011¯0⟩‖Si[110], AlN⟨112¯0⟩‖Si[100], and AlN⟨011¯0⟩‖Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
No related grants have been discovered for Sukkaneste Tungasmita.