ORCID Profile
0000-0002-8781-9187
Current Organisation
The University of Auckland
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Publisher: AIP
Date: 2010
DOI: 10.1063/1.3463182
Publisher: American Chemical Society (ACS)
Date: 06-10-2011
DOI: 10.1021/JP206357C
Publisher: Royal Society of Chemistry (RSC)
Date: 1994
DOI: 10.1039/C39940001717
Publisher: Springer International Publishing
Date: 2013
Publisher: Elsevier BV
Date: 03-2016
Publisher: Canadian Science Publishing
Date: 10-2007
DOI: 10.1139/V07-106
Abstract: The structure of metallurgical- or smelter-grade aluminas (MGAs) is complex and poorly understood. Ultra-high-field solid-state 27 Al NMR results on industrial as well as on laboratory-prepared aluminas are discussed in relation to XRD results. It is demonstrated that high-field NMR can effectively be used to quantify the proportion of the thermodynamically stable alpha-alumina phase in these materials. The results demonstrate that 27 Al NMR is a vital adjunct to XRD methods to quantify the transition alumina phases that invariably dominate the MGAs. The nature of the disorder in these materials, determined by 27 Al NMR, is also compared with literature data, such as XANES and EXAFS studies, on typical laboratory-prepared materials. The utility of 27 Al NMR studies to provide new insight into the structural complexity of metallurgical aluminas is shown.Key words: solid-state magic-angle-spinning NMR, metallurgical-grade alumina, transition alumina, gamma-alumina, coordination number.
Publisher: Elsevier BV
Date: 06-1994
Publisher: AIP Publishing
Date: 15-09-2005
DOI: 10.1063/1.2014937
Abstract: We have investigated experimentally the structure of disordered GaN films. The results suggest that it is not possible to stabilize an amorphous network in stoichiometric films, and the GaN instead consists of random-stacked nanocrystals of some 3-nm diameter. However, incorporation of 15% or more oxygen stabilizes an amorphous phase, which we attribute to the presence of nontetrahedral bonds centered on oxygen. The ionic favorability of heteropolar bonds and its strikingly simple constraint to even-membered rings are the likely causes of the instability of stoichiometric a-GaN.
Publisher: IOP Publishing
Date: 29-05-2014
Publisher: Royal Society of Chemistry (RSC)
Date: 1995
DOI: 10.1039/FT9959104149
Publisher: Royal Society of Chemistry (RSC)
Date: 1994
DOI: 10.1039/C39940000525
Publisher: Royal Society of Chemistry (RSC)
Date: 1995
DOI: 10.1039/FT9959100133
Publisher: Springer Science and Business Media LLC
Date: 12-08-2011
Publisher: AIP Publishing
Date: 07-03-2011
DOI: 10.1063/1.3562308
Abstract: Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al Kα (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.
No related grants have been discovered for James Metson.