ORCID Profile
0000-0002-7125-2518
Current Organisation
Iris Light Technologies, Inc.
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Publisher: OSA
Date: 2015
Publisher: IEEE
Date: 08-2012
Publisher: SPIE
Date: 23-01-2010
DOI: 10.1117/12.846852
Publisher: The Optical Society
Date: 07-01-2016
DOI: 10.1364/OE.24.000443
Publisher: OSA
Date: 2015
Publisher: SPIE
Date: 05-2014
DOI: 10.1117/12.2052211
Publisher: The Optical Society
Date: 08-09-2014
DOI: 10.1364/OL.39.005329
Publisher: AIP Publishing
Date: 29-10-2007
DOI: 10.1063/1.2800308
Publisher: IEEE
Date: 05-2007
Publisher: AIP Publishing
Date: 30-11-2009
DOI: 10.1063/1.3269998
Abstract: We have established a new material, indium gallium phosphide, lattice matched to gallium arsenide, for two-dimensional photonic crystals at 1.55 μm. We have demonstrated single-mode cavities with intrinsic Q-factor larger than one million and achieved very large self-phase-modulation coefficient 1.1×103 W1 m−1 in line-defect waveguides. Importantly, the material band gap is such that two-photon absorption, Eg& ℏω, is completely suppressed at this important telecommunications wavelength.
Publisher: OSA
Date: 2016
Publisher: Springer Science and Business Media LLC
Date: 15-01-2014
DOI: 10.1038/NCOMMS4160
Publisher: IEEE
Date: 06-2013
Publisher: IEEE
Date: 06-2013
Publisher: SPIE
Date: 09-02-2006
DOI: 10.1117/12.652641
Publisher: American Physical Society (APS)
Date: 09-07-2015
Publisher: Optica Publishing Group
Date: 03-03-2021
DOI: 10.1364/OSAC.413672
Abstract: Bragg gratings are key optical elements for applications in communications, sensing, and lasers. Phase-shifted Bragg gratings are a special case where the simple periodic structure is altered to allow a narrow spectral passband within the optical bandgap. Here, we demonstrate phase-shifted silicon nitride gratings fabricated using 193 nm deep ultraviolet lithography (DUV) on the AIM Photonics 300 mm silicon photonics foundry line. We measure the grating properties and verify the results with a transfer-matrix method (TMM) model. The standard grating expressions for extracting the coupling coefficient κ and bandwidth do not apply and are updated to account for the phase shift. These results inform future designs for on-chip grating filters and distributed feedback (DFB) lasers.
Publisher: OSA
Date: 2014
Publisher: OSA
Date: 2016
Publisher: OSA
Date: 2012
Publisher: SPIE
Date: 31-08-2006
DOI: 10.1117/12.683852
Publisher: AIP Publishing
Date: 22-02-2010
DOI: 10.1063/1.3308492
Abstract: We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric lification.
Publisher: Springer Science and Business Media LLC
Date: 21-11-2018
DOI: 10.1038/S41598-018-34344-4
Abstract: Supercontinuum generation in Kerr media has become a staple of nonlinear optics. It has been celebrated for advancing the understanding of soliton propagation as well as its many applications in a broad range of fields. Coherent spectral broadening of laser light is now commonly performed in laboratories and used in commercial “white light” sources. The prospect of miniaturizing the technology is currently driving experiments in different integrated platforms such as semiconductor on insulator waveguides. Central to the spectral broadening is the concept of higher-order soliton fission. While widely accepted in silica fibers, the dynamics of soliton decay in semiconductor waveguides is yet poorly understood. In particular, the role of nonlinear loss and free carriers, absent in silica, remains an open question. Here, through experiments and simulations, we show that nonlinear loss is the dominant perturbation in wire waveguides, while free-carrier dispersion is dominant in photonic crystal waveguides.
Publisher: The Optical Society
Date: 07-06-2011
DOI: 10.1364/OL.36.002239
Publisher: OSA
Date: 2014
Publisher: OSA
Date: 2014
Publisher: AIP Publishing
Date: 12-01-2009
DOI: 10.1063/1.3068755
Abstract: We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy (∼120 fJ), small energy absorption (∼10 fJ), fast on-off response (∼15 ps), limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates.
Publisher: The Optical Society
Date: 03-10-2011
DOI: 10.1364/OE.19.020364
Publisher: Springer Science and Business Media LLC
Date: 04-11-2013
DOI: 10.1038/SREP03087
Publisher: IEEE
Date: 05-2008
Publisher: OSA
Date: 2012
Publisher: The Optical Society
Date: 04-10-2011
DOI: 10.1364/OE.19.020681
Publisher: OSA
Date: 2015
Publisher: OSA
Date: 2013
Publisher: OSA
Date: 2012
Publisher: OSA
Date: 2012
Publisher: Springer Science and Business Media LLC
Date: 22-01-2013
DOI: 10.1038/SREP01100
Publisher: The Optical Society
Date: 12-01-2015
Publisher: SPIE
Date: 18-04-2016
DOI: 10.1117/12.2231199
Publisher: The Optical Society
Date: 15-01-2014
DOI: 10.1364/OL.39.000363
Publisher: OSA
Date: 2015
Publisher: OSA
Date: 2014
Publisher: IEEE
Date: 08-2011
Publisher: OSA
Date: 2015
Publisher: AIP Publishing
Date: 08-07-2013
DOI: 10.1063/1.4813140
Abstract: We report phase-resolved temporal measurements of picosecond pulse propagation in silicon chip-scale nanowire waveguides. The nonlinear ultrafast phenomena are examined experimentally with frequency-resolved optical gating and numerically with nonlinear Schrödinger pulse modeling. Pulse broadening and higher-order pulse splitting were observed experimentally and matched remarkably with numerical predictions. The contributions of self-phase modulation and group velocity dispersion, as well as two-photon absorption, free-carrier dispersion, and absorption, are described and discussed, in support of chip-scale nonlinear signal processing and ultrafast processes.
Publisher: The Optical Society
Date: 22-02-2013
DOI: 10.1364/OL.38.000649
Publisher: AIP Publishing
Date: 30-07-2007
DOI: 10.1063/1.2757607
Abstract: The authors observe experimentally optical bistability enhanced through Fano interferences in high-Q localized silicon photonic crystal resonances (Q∼30000 and modal volume ∼0.98 cubic wavelengths). This phenomenon is analyzed through nonlinear coupled-mode formalism, including the interplay of χ(3) effects such as two-photon absorption and related free-carrier dynamics, and optical Kerr as well as thermal effects and linear losses. Experimental and theoretical results demonstrate Fano resonance based bistable states with switching thresholds of 185μW and 4.5fJ internally stored cavity energy (∼540fJ consumed energy) in silicon for scalable optical buffering and logic.
Publisher: Elsevier BV
Date: 03-2014
Publisher: OSA
Date: 2009
Publisher: Springer Science and Business Media LLC
Date: 15-04-2016
DOI: 10.1038/NCOMMS11332
Abstract: Solitons are localized waves formed by a balance of focusing and defocusing effects. These nonlinear waves exist in erse forms of matter yet exhibit similar properties including stability, periodic recurrence and particle-like trajectories. One important property is soliton fission, a process by which an energetic higher-order soliton breaks apart due to dispersive or nonlinear perturbations. Here we demonstrate through both experiment and theory that nonlinear photocarrier generation can induce soliton fission. Using near-field measurements, we directly observe the nonlinear spatial and temporal evolution of optical pulses in situ in a nanophotonic semiconductor waveguide. We develop an analytic formalism describing the free-carrier dispersion (FCD) perturbation and show the experiment exceeds the minimum threshold by an order of magnitude. We confirm these observations with a numerical nonlinear Schrödinger equation model. These results provide a fundamental explanation and physical scaling of optical pulse evolution in free-carrier media and could enable improved supercontinuum sources in gas based and integrated semiconductor waveguides.
Publisher: The Optical Society
Date: 13-07-2012
DOI: 10.1364/OL.37.002991
Publisher: The Optical Society
Date: 12-03-2014
Publisher: The Optical Society
Date: 05-10-2012
DOI: 10.1364/OL.37.004215
Publisher: IEEE
Date: 07-2014
DOI: 10.1109/SUM.2014.79
Publisher: SPIE
Date: 06-2012
DOI: 10.1117/12.922181
Publisher: IEEE
Date: 05-2007
Publisher: The Optical Society
Date: 22-06-2015
DOI: 10.1364/OE.23.017101
Publisher: OSA
Date: 2013
Publisher: IEEE
Date: 05-2007
Publisher: The Optical Society
Date: 30-10-2014
Publisher: OSA
Date: 2009
Publisher: OSA
Date: 2009
Publisher: SPIE
Date: 10-2006
DOI: 10.1117/12.686223
Publisher: Springer Science and Business Media LLC
Date: 29-01-2016
DOI: 10.1038/NCOMMS10427
Abstract: Temporal optical solitons have been the subject of intense research due to their intriguing physics and applications in ultrafast optics and supercontinuum generation. Conventional bright optical solitons result from the interaction of anomalous group-velocity dispersion and self-phase modulation. Here we experimentally demonstrate a class of bright soliton arising purely from the interaction of negative fourth-order dispersion and self-phase modulation, which can occur even for normal group-velocity dispersion. We provide experimental and numerical evidence of shape-preserving propagation and flat temporal phase for the fundamental pure-quartic soliton and periodically modulated propagation for the higher-order pure-quartic solitons. We derive the approximate shape of the fundamental pure-quartic soliton and discover that is surprisingly Gaussian, exhibiting excellent agreement with our experimental observations. Our discovery, enabled by precise dispersion engineering, could find applications in communications, frequency combs and ultrafast lasers.
Publisher: Optica Publishing Group
Date: 23-11-2009
DOI: 10.1364/OE.17.022442
Publisher: AIP Publishing
Date: 15-10-2007
DOI: 10.1063/1.2800312
Abstract: We propose and demonstrate the digital resonance tuning of high-Q∕Vm silicon photonic crystal nanocavities using a self-limiting atomic layer deposition technique. Control of resonances in discrete steps of 122±18pm/hafnium oxide atomic layer is achieved through this postfabrication process, nearly linear over a full 17nm tuning range. The cavity Q is maintained in this perturbative process, and can reach up to its initial values of 49 000 or more. Our results are highly controllable, applicable to many material systems, and particularly critical to matching resonances and transitions involving mesoscopic optical cavities.
Publisher: Proceedings of the National Academy of Sciences
Date: 18-04-2016
Abstract: Few-layered phosphorene, which is isolated through exfoliation from black phosphorus, has attracted great interest due to its unique electronic and optical properties. Although solution-based exfoliation methods have been developed for black phosphorus, these techniques have thus far used anhydrous organic solvents. This approach minimizes exposure to known oxidizing species, but at the cost of limited exfoliation yield and relatively thick flakes. Here, we overcome these limitations by using stabilizing surfactants in deoxygenated water, which results in phosphorene down to the monolayer limit. The resulting aqueous phosphorene dispersions show layer-dependent photoluminescence and enable high-performance field-effect transistors. Overall, this approach holds promise for the solution-phase production of few-layered phosphorene in emerging large-volume applications including electronics and optoelectronics.
Publisher: OSA
Date: 2009
Publisher: Springer Science and Business Media LLC
Date: 09-03-2016
DOI: 10.1038/NCOMMS11048
Abstract: Nature Communications 7: Article number: 10427 (2016) Published: 29 January 2016 Updated: 9 March 2016 The original version of this article contained an error in the spelling of the author C. Martijn de Sterke, which was incorrectly given as de Sterke C. Martijn. This has now been corrected in both the PDF and HTML versions of the article.
Publisher: OSA
Date: 2017
Publisher: American Physical Society (APS)
Date: 16-04-2009
Publisher: IEEE
Date: 10-2011
Publisher: American Chemical Society (ACS)
Date: 25-09-2018
DOI: 10.1021/ACS.NANOLETT.8B03037
Abstract: Generating and lifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 μm ( E
Publisher: OSA
Date: 2013
Publisher: Springer Science and Business Media LLC
Date: 21-11-2010
Publisher: OSA
Date: 2016
Publisher: IEEE
Date: 09-2010
No related grants have been discovered for Chad Husko.