ORCID Profile
0000-0002-5518-9379
Current Organisation
Singapore university of technology and design
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Publisher: MDPI AG
Date: 10-2020
DOI: 10.3390/ELECTRONICS9101608
Abstract: In this work, the design of a novel Ka-band miniaturized bandpass filter with broad bandwidth is demonstrated by using inversely coupled U-shaped transmission lines. In the proposed filter, two transmission zeros can be generated within a cascaded U-shaped structure and it can also be proven that, by inversely coupling two stacked U-shaped transmission lines, the notch frequency at the upper stopband can be shifted to a lower frequency, which results in a smaller chip size. The key parameters affecting the performance of the proposed filter are investigated in detail with the effective lumped-element circuit illustrated. Fabricated in a 0.13-μm SiGe BiCMOS process, the proposed filter achieves an insertion loss of 3.6 dB at a frequency of 28.75 GHz and the measured bandwidth is from 20.75 GHz to 41 GHz. The return loss is better than −10 dB from 20.5 GHz to 39 GHz. The lower transmission zero is located at 11.75 GHz with a suppression of 54 dB while the upper transmission zero is around 67 GHz with an attenuation of 34.6 dB. The measurement agrees very well with the simulation results and the overall chip size of the proposed filter is 176 × 269 μm2.
Publisher: IEEE
Date: 05-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2016
Publisher: IEEE
Date: 06-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2014
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2013
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2015
Publisher: Institution of Engineering and Technology (IET)
Date: 06-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2022
Publisher: MDPI AG
Date: 27-06-2020
DOI: 10.3390/ELECTRONICS9071058
Abstract: This paper presents two new inductorless differential variable-gain transimpedance lifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode pre lifier stage and a cascaded lifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2021
Publisher: MDPI AG
Date: 09-07-2020
DOI: 10.3390/ELECTRONICS9071116
Abstract: This article presents a novel Ka-band Marchand balun implemented in 0.13-μm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge- and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 μm × 280 μm.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2015
Publisher: Hindawi Limited
Date: 03-2011
DOI: 10.1002/MMCE.20499
Publisher: IEEE
Date: 02-2013
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2014
Publisher: IEEE
Date: 10-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2023
Publisher: IEEE
Date: 05-2015
Publisher: IEEE
Date: 11-2017
Publisher: IEEE
Date: 05-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2021
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2017
Publisher: IEEE
Date: 05-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2020
Location: Singapore
No related grants have been discovered for Hang Liu.