ORCID Profile
0000-0002-2723-5286
Current Organisations
University of New South Wales
,
UNSW Sydney
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Photodetectors, Optical Sensors and Solar Cells | Electrical and Electronic Engineering | Functional Materials | Compound Semiconductors | Condensed Matter Physics | Materials Engineering | Aerospace Materials | Surfaces and Structural Properties of Condensed Matter | Condensed Matter Characterisation Technique Development |
ANZSRC Socio-Economic Objective (SEO)
Solar-Photovoltaic Energy | Expanding Knowledge in the Physical Sciences | Space Transport | Expanding Knowledge in Technology
Related Links
Publications
Quantifying optical losses of silicon solar cells with carrier selective hole contacts
Publisher: Author(s)
Date: 2018
DOI: 10.1063/1.5049273
Cd-Free Cu2ZnSnS4solar cell with an efficiency greater than 10% enabled by Al2O3passivation layers
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9EE01726G
Abstract: Cd-Free CZTS solar cell with above 10% efficiency was achieved by an Al 2 O 3 passivation layer prepared by ALD.
Impact of wafer properties and production processes on the degradation in industrial PERC solar cells
Publisher: IEEE
Date: 14-06-2020
Dielectric Charge Tailoring in PECVD SiOx /SiNx Stacks and Application at the Rear of Al Local Back Surface Field Si Wafer Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2015
Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer
Publisher: American Chemical Society (ACS)
Date: 20-10-2018
Accurate extraction of the series resistance of aluminum local back surface field silicon wafer solar cells
Publisher: Elsevier BV
Date: 02-2015
Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
Publisher: AIP Publishing
Date: 23-06-2014
DOI: 10.1063/1.4885096
Abstract: In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiOx films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiOx films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiOx films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiOx has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiOx in the field of high-efficiency silicon wafer solar cells.
0.4% absolute efficiency increase for inline-diffused screen-printed multicrystalline silicon wafer solar cells by non-acidic deep emitter etch-back
Publisher: Elsevier BV
Date: 06-2015
Advanced Modelling of Silicon Wafer Solar Cells
Publisher: IOP Publishing
Date: 10-2012
Abstract: Modelling of solar cells today is general practice in research and widely-used in industry. Established modelling software is typically limited to one dimension and/or to small scales. Additionally, novel effects, like, e.g., the use of diffractive structures or luminescent materials, are not established. In this paper we discuss how the combination of different modelling techniques can be used to overcome these limitations. In this context two ex les are presented. The first ex le concerns the combination of the open source simulation software PC1D with circuit modelling to investigate the effect of local shunts on the global characteristics of a silicon wafer solar cell. For the investigated ex le (4.5 cm 2 cell area) we find that a local point shunt reduces the solar cell efficiency by 4% relative. The second ex le concerns the modelling of diffractive gratings for thin silicon wafer solar cells. For this purpose, we use the rigorous coupled wave analysis to simulate Sentaurus technical computer-aided design (TCAD) is combined with the rigorous coupled wave analysis, a method to solve Maxwell's equations for periodic structures. Here we show that a grating can be used to improve the absorption in a thin silicon wafer solar cell considerably.
Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces
Publisher: Elsevier BV
Date: 12-2005
Industrial Silicon Wafer Solar Cells – Status and Trends
Publisher: Walter de Gruyter GmbH
Date: 20-01-2012
Abstract: Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower $/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology.
ALD ZnSnO buffer layer for enhancing heterojunction interface quality of CZTS solar cells
Publisher: IEEE
Date: 06-2018
Advanced Characterisation of Black Silicon Surface Topography with 3D PFIB-SEM
Publisher: IEEE
Date: 06-2019
Improving the Silicon Surface Passivation by Aluminum Oxide Grown Using a Non‐Pyrophoric Aluminum Precursor
Publisher: Wiley
Date: 07-05-2018
Numerical Analysis of p Emitters Passivated by a PECVD AlOx/SiNx Stack
Publisher: Elsevier BV
Date: 2013
Silicon Nanotexture Surface Area Mapping Using Ultraviolet Reflectance
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2021
Accelerated damp-heat testing at the cell-level of bifacial silicon HJT, PERC and TOPCon solar cells using sodium chloride
Publisher: Elsevier BV
Date: 10-2023
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of ZnMgO for Efficient CZTS Solar Cells
Publisher: American Chemical Society (ACS)
Date: 11-04-2023
Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
Publisher: Wiley
Date: 06-01-2009
Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx /SiNy dielectric stacks with optimised antireflective performance for solar cell application
Publisher: Elsevier BV
Date: 2014
Atomic layer deposition enabling higher efficiency solar cells: A review
Publisher: Elsevier BV
Date: 09-2020
POCl3 diffusion for industrial Si solar cell emitter formation
Publisher: Springer Science and Business Media LLC
Date: 19-11-2016
19% Efficient Inline-diffused Large-area Screen-printed Al-LBSF Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
Polarization analysis of luminescence for the characterization of silicon wafer solar cells
Publisher: AIP Publishing
Date: 25-04-2011
DOI: 10.1063/1.3584857
Abstract: Luminescence imaging is routinely used to extract important information from photovoltaic materials and devices. We extend the existing luminescence imaging technique to yield the partial polarization of luminescence. It is observed that certain material structures of silicon wafer solar cells generate strongly polarized luminescence. The luminescence polarization effect is related to internal charge anisotropy of certain defects in the silicon wafer solar cells. These observations may be used, for ex le, to advance the characterization of solar cells, to understand the electrical properties of defects in silicon wafer solar cells, or to study the formation of defects during crystal growth.
Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid
Publisher: The Electrochemical Society
Date: 2013
DOI: 10.1149/2.026309JSS
Excellent Passivation of p+ Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiOx/AlOx Stacks
Publisher: IOP Publishing
Date: 10-2012
Abstract: Excellent surface passivation of boron emitters is demonstrated for industrial plasma-enhanced chemical vapor deposited (PECVD) SiO x /AlO x stacks. Emitter saturation current densities of 39 and 34 fA/cm 2 , respectively, were achieved at 300 K on 80 Ω/sq boron emitters after activation by (i) a standard industrial firing process and (ii) a forming gas anneal followed by industrial firing. We find that the surface passivation by SiO x /AlO x stack can be effectively controlled by varying the SiO x layer thickness. This stack is directly applicable to certain high-efficiency solar cell structures, by optimising the SiO x thickness accordingly.
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
Publisher: AIP Publishing
Date: 12-2008
DOI: 10.1063/1.3021091
Abstract: Al 2 O 3 is a versatile high-κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm−2 present in the Al2O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2O3 is especially beneficial for the passivation of p-type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes.
Controlling Light- and Elevated-Temperature-Induced Degradation With Thin Film Barrier Layers
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2020
Optimized Ni1−xAlxO hole transport layer for silicon solar cells
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0RA02982C
Abstract: NiO alloyed with aluminum, Ni 1−x Al x O, is analyzed in terms of its stoichiometry, electronic and transport properties, as well as interfacial band alignment with Si to evaluate its potential use as a hole transport layer (HTL) in p–i–n type solar cells.
A systematic loss analysis method for rear-passivated silicon solar cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2015
Atomic layer deposition: Prospects for solar cell manufacturing
Publisher: IEEE
Date: 05-2008
State-of-the-art surface passivation of boron emitters using inline PECVD AlOx /SiNx stacks for industrial high-efficiency silicon wafer solar cells
Publisher: IEEE
Date: 06-2012
Analysing Solar Cells by Circuit Modelling
Publisher: Elsevier BV
Date: 2012
Crystal quality improvement of solid-phase crystallized evaporated silicon films by in-situ densification anneal
Publisher: Elsevier BV
Date: 06-2009
Rear-Side Contact Opening by Laser Ablation for Industrial Screen-Printed Aluminium Local Back Surface Field Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
Publisher: Wiley
Date: 03-03-2008
DOI: 10.1002/PIP.823
Investigation of Evaporated Rear Contacts for Al-LBSF Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
Electric field induced surface passivation of Si by atomic layer deposited Al<inf>2</inf>O<inf>3</inf> studied by optical second-harmonic generation
Publisher: IEEE
Date: 06-2009
Interface Modification Enabled by Atomic Layer Deposited Ultra‐Thin Titanium Oxide for High‐Efficiency and Semitransparent Organic Solar Cells
Publisher: Wiley
Date: 14-10-2020
Broken metal fingers in silicon wafer solar cells and PV modules
Publisher: Elsevier BV
Date: 2013
Investigation of screen-printed rear contacts for aluminum local back surface field silicon wafer solar cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2013
Doped Nickel Oxide Carrier-Selective Contact for Silicon Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2021
A Review of the Effects of Haze on Solar Photovoltaic Performance
Publisher: Elsevier BV
Date: 10-2022
Accurate characterisation of silicon nitride films on rough silicon surfaces by ellipsometry
Publisher: Elsevier BV
Date: 2011
Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films
Publisher: The Electrochemical Society
Date: 15-11-2013
DOI: 10.1149/2.026301JSS
In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
Publisher: American Vacuum Society
Date: 16-03-2018
DOI: 10.1116/1.5020339
Abstract: WOx is one of the most promising high work function materials to be used as hole-selective materials for c-Si solar cells. Apart from the optical and electrical properties of such materials, their thermal stability is of crucial importance for the potential application of these contacts. The thermal stability of plasma-enhanced atomic layer deposited WOx is investigated with and without an a-Si:H interface passivation layer. Time-of-flight secondary ion mass spectroscopy reveals that the as-deposited WOx films contain H resulting from the W precursor. In situ x-ray photoelectron spectroscopy under high vacuum in the 300 to 900 K temperature range shows that tungsten starts degrading from W+6 to W+5 for temperatures & K. The work function is found to be stable up to temperatures of 600 K. Subsequently, hydrogen diffusion from a-Si:H decreases the work function of WOx and enhances the degradation of tungsten's oxidation state. Fourier transform infrared spectroscopy confirms the reduction in the hydrogen content in the thin film stack after annealing at 600 K. Besides, the passivation level of the film stack a-Si:H/WOx showed a maximum lifetime of 3.5 ms (at 1 × 15 cm−3) after annealing at 500 K. The results are of key importance for the integration of these novel contacts in high-efficiency silicon solar cells.
Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMA
Publisher: IEEE
Date: 06-2013
Atomic layer deposited ZnxNi1−xO: A thermally stable hole selective contact for silicon solar cells
Publisher: AIP Publishing
Date: 24-12-2018
DOI: 10.1063/1.5056223
Abstract: Atomic layer deposited zinc nickel oxide (ZNO, ZnxNi1−xO) films with Zn concentrations of 0.09, 0.46, and 0.62 are investigated for application as a hole-selective contact for crystalline silicon solar cells. The ZNO films were found to be p-type by evaluating their contact performance on p-Si. A direct contact between ZNO and p-Si showed perfect ohmic behaviour. Spectroscopic ellipsometry measurements revealed a high optical transparency of the ZNO films with a bandgap of & eV. X-ray photoelectron spectroscopy confirmed a much lower valence band offset between ZNO and p-Si than the conduction band offset, which is favourable for selective hole extraction on p-Si. In addition, subsequent annealing at 200 °C significantly decreased the contact resistivity, and annealing temperatures up to 500 °C did not degrade its contact performance. A minimal contact resistivity of 21.5 mΩ·cm2 was obtained on p-type c-Si for a 3.4 nm ZNO film with a Zn concentration of 0.62 after annealing at 200 °C. These results demonstrate the advantages of ZnxNi1−xO as a hole-selective contact for crystalline p-Si solar cells.
High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique
Publisher: IEEE
Date: 05-2006
Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AlGaN/GaN HEMTs
Publisher: The Electrochemical Society
Date: 03-10-2009
DOI: 10.1149/1.2983174
Abstract: We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of various PECVD parameters like gas composition (SiH4/NH3 ratio and ammonia-free SiNx), process pressure, plasma power and deposition temperature. The best SiNx layer is Si-rich and has a refractive index of 2.01, an extinction coefficient of 0.03 at 3.44 eV and an optical band gap of 2.87eV. The best device performance was only achieved when the optimized SiNx layer was used in conjunction with a low-power Ar-plasma after the metallization of the ohmic contacts and cleaning using an ammonia dip just before the Schottky gate metallization. The latter treatment accounted for a substantial reduction of the gate and drain leakage currents densities from 6.7 mA/mm to 400 μA/mm.
Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells
Publisher: American Chemical Society (ACS)
Date: 15-07-2020
Passivation of Boron-Doped Industrial Silicon Emitters by Thermal Atomic Layer Deposited Titanium Oxide
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2015
3D characterisation using plasma FIB-SEM: A large-area tomography technique for complex surfaces like black silicon
Publisher: Elsevier BV
Date: 11-2020
Evaluating the Impact of SiNx Thickness on Lifetime Degradation in Silicon
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2019
Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples
Publisher: IEEE
Date: 06-2014
15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact
Publisher: American Chemical Society (ACS)
Date: 24-04-2019
Abstract: In order to achieve a high performance-to-cost ratio to photovoltaic devices, the development of crystalline silicon (c-Si) solar cells with thinner substrates and simpler fabrication routes is an important step. Thin-film heterojunction solar cells (HSCs) with dopant-free and carrier-selective configurations look like ideal candidates in this respect. Here, we investigated the application of n-type silicon oly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HSCs on periodic nanopyramid textured, ultrathin c-Si (∼25 μm) substrates. A fluorine-doped titanium oxide film was used as an electron-selective passivating layer showing excellent interfacial passivation (surface recombination velocity ∼10 cm/s) and contact property (contact resistivity ∼20 mΩ/cm
Polarisation analysis of luminescence for the characterisation of defects in silicon wafer solar cells
Publisher: Wiley
Date: 02-11-2011
DOI: 10.1002/PIP.1201
In-situ X-ray diffraction analysis of the crystallisation of a-SI:H films deposited by the expanding thermal plasma technique
Publisher: IEEE
Date: 06-2011
Ultrathin Silicon Solar Cell Loss Analysis
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2016
Mie resonators as rearside light trapping structures in planar crystalline silicon solar cells
Publisher: OSA
Date: 2018
High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD
Publisher: IEEE
Date: 06-2011
High-Efficiency Nonfullerene Organic Solar Cells Enabled by Atomic Layer Deposited Zirconium-Doped Zinc Oxide
Publisher: Wiley
Date: 06-08-2020
Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H
Publisher: Elsevier BV
Date: 06-2012
Direct laser doping of poly-silicon thin films via laser chemical processing
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2013
Black silicon: fabrication methods, properties and solar energy applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4EE01152J
Abstract: A comprehensive review on the recent progress of black silicon research and its applications in solar cell technologies.
Progress with surface passivation of heavily doped n+ silicon by industrial PECVD SiNx films
Publisher: IEEE
Date: 06-2015
Advanced loss analysis method for silicon wafer solar cells
Publisher: Elsevier BV
Date: 2011
Medium range order engineering in amorphous silicon thin films for solid phase crystallization
Publisher: AIP Publishing
Date: 20-05-2013
DOI: 10.1063/1.4807166
Abstract: In recent years, it has been recognized that medium range ordering (MRO) in amorphous silicon (a-Si:H) plays a role in controlling its solid phase crystallization (SPC) behavior. Information on the MRO can be obtained from the width of the first X-ray diffraction (XRD) peak of a-Si:H centered around 2θ = 27.5°. The broader the full width half maximum (FWHM) of the first XRD peak, the less ordered the a-Si:H material in the medium range length scale (up to 5 nm). In this work, it was found that the FWHM of the first XRD peak changes with the pressure used during the deposition of a-Si:H. A threshold SPC behavior was observed as a function of the a-Si:H deposition pressure and a good correlation between the SPC behavior and the a-Si:H XRD peak width was found. Results in this study indicate that higher MRO in a-Si:H led to faster SPC rates and smaller grain sizes, suggesting the presence of relatively active and high density of nucleation sites. High angle annular dark field scanning transmission electron microscopy and ultraviolet reflectance indicate that films with higher MRO yielded polycrystalline silicon (poly-Si) grains which were more defective and non-columnar in morphology. Results suggest that a-Si:H material with lower MRO were preferred as a precursor for SPC, which forms a better quality poly-Si thin film material. It was proposed that ion bombardment seems to play a role in altering the a-Si:H properties.
Addressing sodium ion-related degradation in SHJ cells by the application of nano-scale barrier layers
Publisher: Elsevier BV
Date: 2024
Understanding Light- and Elevated Temperature-Induced Degradation in Silicon Wafers Using Hydrogen Effusion Mass Spectroscopy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2201
Impact of Pregrown SiOx on the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells
Publisher: American Chemical Society (ACS)
Date: 26-07-2021
Surface passivation of boron diffused emitters for high efficiency solar cells
Publisher: IEEE
Date: 05-2008
Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation
Publisher: AIP Publishing
Date: 10-2008
DOI: 10.1063/1.2985906
Abstract: Thin films of Al2O3 synthesized by atomic layer deposition provide an excellent level of interface passivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al2O3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al2O3 interfaces by optical second-harmonic generation (SHG). SHG has revealed a negative fixed charge density in as-deposited Al2O3 on the order of 1011 cm−2 that increased to 1012–1013 cm−2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al2O3 conduction band offset of 2.02±0.04 eV.
Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells
Publisher: IEEE
Date: 05-2008
Crystalline silicon surface passivation by the negative-charge-dielectric Al<inf>2</inf>O<inf>3</inf>
Publisher: IEEE
Date: 05-2008
Empirical and Quokka simulated evidence for enhanced VOc due to limited junction area for high efficiency silicon solar cells
Publisher: IEEE
Date: 06-2017
The ALU<sup>+</sup> concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
Publisher: IEEE
Date: 06-2009
Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells
Publisher: Wiley
Date: 12-09-2018
DOI: 10.1002/PIP.2928
Sign reversal of spin polarization inC
Publisher:
American Physical Society (APS)
Date:
22-08-2001
Publisher: American Physical Society (APS)
Date: 22-08-2001
Field-Effect Passivation of Undiffused Black Silicon Surfaces
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2021
Investigation of laser ablation on boron emitters for n‐type rear‐junction PERT type silicon wafer solar cells
Publisher: Wiley
Date: 05-03-2015
DOI: 10.1002/PIP.2604
Quantification of Front Side Metallization Area on Silicon Wafer Solar Cells for Background Plating Detection
Publisher: Elsevier BV
Date: 08-2015
An Artificial-Intelligence-Assisted Investigation on the Potential of Black Silicon Nanotextures for Silicon Solar Cells
Publisher: American Chemical Society (ACS)
Date: 15-08-2022
Contact properties of electroless nickel plated contacts on diffused p + silicon surfaces.
Publisher: IEEE
Date: 06-2018
Evaluating the Impact of Thermal Annealing on Al 2 O 3 /c-Si Interface Properties by Non-Destructive Measurements
Publisher: IEEE
Date: 06-2018
Observations on the spectral characteristics of defect luminescence of silicon wafer solar cells
Publisher: IEEE
Date: 06-2010
Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films
Publisher: Wiley
Date: 17-12-2012
DOI: 10.1002/PIP.2320
Absolute densities of N and excited N2 in a N2 plasma
Publisher: AIP Publishing
Date: 10-12-2003
DOI: 10.1063/1.1630843
Abstract: Atomic N and excited N2 (N2*) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N2* were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m−3, while the density of N2* was in the range of 9.7×1017 to 2.4×1018 m−3, with a maximum at 50 mTorr. Based on the appearance potential of N2* at ∼12 eV, we identify this excited molecule as long-lived N2 (A3Σu+) metastable.
Enhancement of laser-induced rear surface spallation by pyramid textured structures on silicon wafer solar cells
Publisher: The Optical Society
Date: 11-2012
DOI: 10.1364/OE.20.00A984
Scanning Electron Microscopy Dopant Contrast Imaging of Phosphorus‐Diffused Silicon
Publisher: Wiley
Date: 25-09-2022
Abstract: Phosphorous dopant diffusion profiles feature in many silicon semiconductor devices, including the vast majority of silicon solar cells. Accurate spatially resolved dopant profiling is crucial for understanding the performance of these diffused regions, however, it is very challenging to obtain such profiles in non‐planar s les. Scanning electron microscopy for dopant contrast imaging (SEMDCI), where the secondary electron (SE) image contrast is used to determine the dopant level of a semiconductor s le, is an ideal candidate for Si dopant profiling, especially for silicon s les with surface nanotexturing or black silicon (BSi) technology. However, in previous SEMDCI studies, the dopant concentration of heavily doped n‐type layers in silicon s les have shown a poor correlation with the SE signal contrast. In this work, 1) good contrast for n‐type diffused silicon without contrast‐enhancing techniques 2) a new contrast definition to account for imaging non‐uniformities 3) clear correlations between SE contrast and s le work function for phosphorus‐diffused planar silicon specimens across a wide range of emitter profiles 4) implementation of an empirical baseline correction to normalize scanning electron microscopy image condition variations, are presented. This SEMDCI method is subsequently used for the first time to obtain 2D electron concentration maps for both planar and BSi s les.
C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy
Publisher: IEEE
Date: 06-2013
Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements
Publisher: AIP Publishing
Date: 15-11-2017
DOI: 10.1063/1.5010160
Abstract: A novel method for the extraction of fixed interface charge, Qf, and the surface recombination parameters, Sn0 and Sp0, from the injection-level dependent effective minority carrier lifetime measurements is presented. Unlike conventional capacitance-voltage measurements, this technique can be applied to highly doped surfaces provided the surface carrier concentration transitions into strong depletion or inversion with increased carrier injection. By simulating the injection level dependent Auger-corrected inverse lifetime curve of symmetrically passivated and diffused s les after sequential annealing and corona charging, it was revealed that Qf, Sn0, and Sp0 have unique signatures. Therefore, these important electronic parameters, in some instances, can independently be resolved. Furthermore, it was shown that this non-linear lifetime behaviour is exhibited on both p-type and n-type diffused inverted surfaces, by demonstrating the approach with phosphorous diffused n+pn+ structures and boron diffused p+np+ structures passivated with aluminium oxide (AlOx) and silicon nitride, respectively (SiNx). The results show that the approximation of a mid-gap Shockley-Read-Hall defect level with equal capture cross sections is able to, in the s les studied in this work, reproduce the observed injection level dependent lifetime behaviour.
Surface passivation of phosphorus‐diffused n+‐type emitters by plasma‐assisted atomic‐layer deposited Al2O3
Publisher: Wiley
Date: 17-10-2011
Large-area MACE Si nano-inverted-pyramids for PERC solar cell application
Publisher: Elsevier BV
Date: 08-2019
On the Enhanced Phosphorus Doping of Nanotextured Black Silicon
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2021
A novel approach to investigate bulk carrier lifetime using low frequency fluctuation noise measurement
Publisher: IOP Publishing
Date: 28-10-2014
A real-time study of the a-Si:H/c-Si interface formation using ellipsometry, infrared spectroscopy, and second harmonic generation
Publisher: IEEE
Date: 05-2006
Investigation of defect luminescence from multicrystalline Si wafer solar cells using X‐ray fluorescence and luminescence imaging
Publisher: Wiley
Date: 28-11-2012
Rapid passivation of carrier-induced defects in p-type multi-crystalline silicon
Publisher: Elsevier BV
Date: 12-2016
The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2017
Understanding Field-Effect Passivation of Black Silicon: Modeling Charge Carrier Population Control in Compressed Space Charge Regions
Publisher: IEEE
Date: 14-06-2020
Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2017
Firing stability of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> for c-Si surface passivation
Publisher: IEEE
Date: 06-2009
Graded NixAlyO hole transport layer in silicon solar cells
Publisher: IEEE
Date: 14-06-2020
Influences of oxygen contamination on evaporated poly-Si thin-film solar cells by solid-phase epitaxy
Publisher: Elsevier BV
Date: 05-2010
Identification of geometrically necessary dislocations in solid phase crystallized poly-Si
Publisher: AIP Publishing
Date: 25-07-2013
DOI: 10.1063/1.4816563
Abstract: In this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H). Electron backscatter diffraction was used to characterize dislocations in SPC poly-Si thin films. The elevated temperatures during SPC allow the GNDs to rearrange into arrays, forming low angle grain boundaries. We found that GNDs start forming in poly-Si grains with sizes & ∼3 μm, suggesting that larger grains are more defective. GNDs are extra defects in addition to the existing statistically stored dislocations that form during grain growth and hence more care needs to be taken to minimize the formation of GNDs.
Extremely low surface recombination velocities on heavily doped planar and textured p+ silicon using low-temperature positively-charged PECVD SiOx/SiNx dielectric stacks with optimised antireflective properties
Publisher: IEEE
Date: 06-2013
Electrical and Microstructural Analysis of Contact Formation on Lightly Doped Phosphorus Emitters Using Thick-Film Ag Screen Printing Pastes
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
Impact of Substrate Thickness on the Degradation in Multicrystalline Silicon
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2021
The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3
Publisher: AIP Publishing
Date: 11-01-2013
DOI: 10.1063/1.4775595
Abstract: The effect of light soaking of crystalline silicon wafer lifetime s les surface passivated by thermal atomic layer deposited (ALD) Al2O3 is investigated in this paper. Contrary to other passivation materials used in solar cell applications (i.e., SiO2, SiNx), using thermal ALD Al2O3, an increase in effective carrier lifetime after light soaking under standard testing conditions is observed for both p-type (∼45%) and n-type (∼60%) FZ c-Si lifetime s les. After light soaking and storing the s les in a dark and dry environment, the effective lifetime decreases again and practically returns to the value before light soaking. The rate of lifetime decrease after light soaking is significantly slower than the rate of lifetime increase by light soaking. To investigate the underlying mechanism, corona charge experiments are carried out on p-type c-Si s les before and after light soaking. The results indicate that the negative fixed charge density Qf present in the Al2O3 films increases due to the light soaking, which results in an improved field-effect passivation. Numerical calculations also confirm that the improved field-effect passivation is the main contributor for the increased effective lifetime after light soaking. To further understand the light soaking phenomenon, a kinetic model—a charge trapping/de-trapping model—is proposed to explain the time dependent behavior of the lifetime increase/decrease observed under/after light soaking. The trap model fits the experimental results very well. The observed light enhanced passivation for ALD Al2O3 passivated c-Si is of technological relevance, because solar cell devices operate under illumination, thus an increase in solar cell efficiency due to light soaking can be expected.
Aluminum local back surface field solar cells with inkjet-opened rear dielectric films
Publisher: IEEE
Date: 06-2012
Efficient light harvesting in hybrid quantum dot–interdigitated back contact solar cells via resonant energy transfer and luminescent downshifting
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9NR04003J
Abstract: In this paper,we propose a hybrid quantum dot (QD)/Solar cell configuration to improve the performance of IBC silicon solar cells through efficient utilisation of resonant energy transfer (RET) and luminescent downshifting (LDS).
Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy
Publisher: AIP Publishing
Date: 13-04-2004
DOI: 10.1063/1.1713047
Abstract: Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10−6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
Publisher: AIP Publishing
Date: 10-09-2007
DOI: 10.1063/1.2784168
Abstract: From lifetime measurements, including a direct experimental comparison with thermal SiO2, a-Si:H, and as-deposited a-SiNx:H, it is demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3. The Al2O3 films, synthesized by plasma-assisted atomic layer deposition and with a high fixed negative charge density, limit the emitter saturation current density of B-diffused p+-emitters to ∼10 and ∼30fA∕cm2 on & and 54Ω∕sq sheet resistance p+-emitters, respectively. These results demonstrate that highly doped p-type Si surfaces can be passivated as effectively as highly doped n-type surfaces.
Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors
Publisher: AIP Publishing
Date: 23-12-2013
DOI: 10.1063/1.4856796
Abstract: We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon s les. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.
Resistive Intrinsic ZnO Films Deposited by Ultrafast Spatial ALD for PV Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2015
Special issue: Surface and interface passivation in crystalline silicon solar cells
Publisher: Elsevier BV
Date: 08-2020
Real-time study ofa − Si :
Publisher:
American Physical Society (APS)
Date:
29-05-2008
Publisher: American Physical Society (APS)
Date: 29-05-2008
Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon
Publisher: AIP Publishing
Date: 12-2009
DOI: 10.1063/1.3264572
Abstract: The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff& cm/s were obtained and the passivation proved sufficiently stable (Seff& cm/s) against a high temperature “firing” process (& °C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.
Optical Modeling of Alkaline Saw-Damage-Etched Rear Surfaces of Monocrystalline Silicon Solar Cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
Publisher: AIP Publishing
Date: 15-06-2007
DOI: 10.1063/1.2748629
Abstract: We report in this work the optical properties of Er3+-doped Y2O3, deposited by radical enhanced atomic layer deposition. Specifically, the 1.53μm absorption cross section of Er3+ in Y2O3 was measured by cavity ring-down spectroscopy to be (1.9±0.5)×10−20cm2, about two times that for Er3+ in SiO2. This is consistent with the larger Er3+ effective absorption cross section at 488nm, determined based on the 1.53μm photoluminescence yield as a function of the pump power. X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy were used to determine the film composition, which in turn was used to analyze the extended x-ray absorption fine structure data, showing that Er was locally coordinated to only O in the first shell and its second shell was a mixture of Y and Er. These results demonstrated that the optical properties of Er3+-doped Y2O3 are enhanced, likely due to the fully oxygen coordinated, spatially controlled, and uniformly distributed Er3+ dopants in the host. These findings are likely universal in rare-earth doped oxide materials, making it possible to design materials with improved optical properties for their use in optoelectronic devices.
Atomic Layer Deposited Alx Niy O as Hole Selective Contact for Silicon Solar Cells
Publisher: IEEE
Date: 06-2019
High-efficient Cd-free CZTS solar cells achieved by nanoscale atomic layer deposited aluminium oxide
Publisher: IEEE
Date: 06-2019
Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions
Publisher: Wiley
Date: 2005
DOI: 10.1002/PIP.628
Improved understanding of the recombination rate at inverted p+ silicon surfaces
Publisher: IOP Publishing
Date: 03-07-2017
Progress in Semitransparent Organic Solar Cells
Publisher: Wiley
Date: 26-03-2021
Laser chemical processing of n-type emitters for solid-phase crystallized polysilicon thin-film solar cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Dielectric surface passivation for silicon solar cells: A review
Publisher: Wiley
Date: 12-06-2017
Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
Publisher: AIP Publishing
Date: 09-2012
DOI: 10.1063/1.4749572
Abstract: A strong injection level dependence of the effective minority carrier lifetime (τeff) is typically measured at low injection levels for undiffused crystalline silicon (c-Si) wafers symmetrically passivated by a highly charged dielectric film. However, this phenomenon is not yet well understood. In this work, we concentrate on two of those possible physical mechanisms to reproduce measured τeff data of c-Si wafers symmetrically passivated by atomic layer deposited Al2O3. The first assumes the existence of a defective region close to the c-Si surface. The second assumes asymmetric electron and hole lifetimes in the bulk. Both explanations result in an adequate reproduction of the injection dependent τeff found for both n- and p-type c-Si wafers. However, modeling also predicts a distinctly different injection dependence of τeff for the two suggested mechanisms if the polarity of the effective surface charge is inverted. We test this prediction by experimentally inverting the polarity of the effective surface charge using corona charges. From the experiments and simulations, it is concluded that surface damage is the most likely cause of the significant reduction of τeff at low injection levels.
Studies into the Growth Mechanism of a‐Si:H Using in situ Cavity Ring‐Down Techniques
Publisher: Wiley
Date: 28-08-2009
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
Publisher: AIP Publishing
Date: 24-07-2006
DOI: 10.1063/1.2240736
Abstract: Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type c-Si, respectively. These results obtained for ∼30nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7nm thin Al2O3 film still yields an effective surface recombination velocity of 5cm∕s on n-type silicon.
The role of hydrogenation and gettering in enhancing the efficiency of next‐generation Si solar cells: An industrial perspective
Publisher: Wiley
Date: 06-06-2017
Thermal stability analysis of WOx and MoOx as hole-selective contacts for Si solar cells using in situ XPS
Publisher: Author(s)
Date: 2018
DOI: 10.1063/1.5049290
Excellent boron emitter passivation for high‐efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor
Publisher: Wiley
Date: 14-02-2012
DOI: 10.1002/PIP.1259
Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2013
DOI: 10.1039/C3RA41156G
Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride
Publisher: IOP Publishing
Date: 05-07-2017
A Robust Weak Taylor Approximation Scheme for Solutions of Jump-Diffusion Stochastic Delay Differential Equations
Publisher: Hindawi Limited
Date: 2013
DOI: 10.1155/2013/750147
Abstract: Stochastic delay differential equations with jumps have a wide range of applications, particularly, in mathematical finance. Solution of the underlying initial value problems is important for the understanding and control of many phenomena and systems in the real world. In this paper, we construct a robust Taylor approximation scheme and then examine the convergence of the method in a weak sense. A convergence theorem for the scheme is established and proved. Our analysis and numerical ex les show that the proposed scheme of high order is effective and efficient for Monte Carlo simulations for jump-diffusion stochastic delay differential equations.
The effects of bifacial deposition of ALD AlOx on the contact properties of screen-printed contacts for p-type PERC solar cells
Publisher: Elsevier BV
Date: 09-2017
Geometric confinement of directly deposited features on hydrophilic rough surfaces using a sacrificial layer
Publisher: Springer Science and Business Media LLC
Date: 13-03-2014
Techno-economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells
Publisher: Wiley
Date: 11-03-2022
DOI: 10.1002/PIP.3553
Abstract: The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100‐fold reduction in price over the past 45 years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel‐oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers ( , and aluminium‐doped zinc oxide [AZO]) to use as lower cost alternatives of the p‐doped, n‐doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom‐up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at high‐volume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.
Excellentc-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation
Publisher: IOP Publishing
Date: 04-09-2013
Line-Imaging Spectroscopy for Characterisation of Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x /SiNx dielectric stacks
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2013
Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon
Publisher: AIP Publishing
Date: 11-11-2014
DOI: 10.1063/1.4901242
Abstract: Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime s les. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured s les. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar s les. The established parameters are subsequently used to simulate the boron diffusion process on textured s les. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured s les is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured s les to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured s les. The differences between planar and textured s les are discussed.
Modelling and Simulation of Field-effect Surface Passivation of Crystalline Silicon-based Solar Cells
Publisher: Elsevier BV
Date: 2012
Advanced Characterisation of Silicon Wafer Solar Cells
Publisher: Elsevier BV
Date: 2012
A fill factor loss analysis method for silicon wafer solar cells
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2013
Silicon surface passivation by atomic layer deposited Al2O3
Publisher: AIP Publishing
Date: 15-08-2008
DOI: 10.1063/1.2963707
Abstract: Thin Al2O3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n-type and 2.0 Ω cm p-type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2O3. A high density of negative fixed charges was detected in the Al2O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p-type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2O3. Furthermore, a brief comparison is presented between the surface passivations achieved for thermal and plasma-assisted ALD Al2O3 films prepared in the same ALD reactor.
Advanced Solar Cell Modelling
Publisher: Elsevier BV
Date: 2013
SunsPZ©: Real-time spatially resolved solar cell parameter visualizer
Publisher: IEEE
Date: 06-2014
Investigation of light-induced degradation in N-Type silicon heterojunction solar cells during illuminated annealing at elevated temperatures
Publisher: Elsevier BV
Date: 12-2020
Numerical Modelling of Silicon p+ Emitters Passivated by a PECVD AlOx/SiNx Stack
Publisher: Elsevier BV
Date: 2013
High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon
Publisher: American Vacuum Society
Date: 07-08-2006
DOI: 10.1116/1.2232580
Abstract: Si O 2 films were deposited by means of the expanding thermal plasma technique at rates in the range of 0.4–1.4μm∕min using an argon∕oxygen∕octamethylcyclotetrasiloxane (OMCTS) gas mixture. The film composition was studied by means of various optical and nuclear profiling techniques. The films deposited with a low OMCTS to oxygen ratio showed no residual carbon and a low hydrogen content of ∼2% with a refractive index close to thermal oxide. For a higher OMCTS to oxygen ratio a carbon content of ∼4% was detected in the films and the refractive index increased to 1.67. The surface passivation of the SiO2 films was tested on high quality crystalline silicon. The films yielded an excellent level of surface passivation for plasma-deposited SiO2 films with an effective surface recombination velocity of 54cm∕s on 1.3Ωcm n-type float zone crystalline silicon substrates after a 15min forming gas anneal at 600°C.
Empirical and Quokka simulated evidence for enhanced VOC due to limited junction area for high efficiency silicon solar cells
Publisher: IEEE
Date: 06-2016
Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors
Publisher: AIP Publishing
Date: 06-10-2014
DOI: 10.1063/1.4895584
Abstract: It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like s le size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from s le size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions.
Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells
Publisher: Springer Science and Business Media LLC
Date: 19-11-2016
Acceleration and mitigation of carrier-induced degradation in p-type multi-crystalline silicon
Publisher: Wiley
Date: 20-01-2016
Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3
Publisher: AIP Publishing
Date: 04-09-2013
DOI: 10.1063/1.4819970
Abstract: In this work, we demonstrate that by using H2O based thermal atomic layer deposited (ALD) Al2O3 films, excellent passivation (emitter saturation current density of ∼28 fA/cm2) on industrial highly boron p+-doped silicon emitters (sheet resistance of ∼62 Ω/sq) can be achieved. The surface passivation of the Al2O3 film is activated by a fast industrial high-temperature firing step identical to the one used for screen printed contact formation. Deposition temperatures in the range of 100-300 °C and peak firing temperatures of ∼800 °C (set temperature) are investigated, using commercial-grade 5″ Cz silicon wafers (∼5 Ω cm n-type). It is found that the level of surface passivation after activation is excellent for the whole investigated deposition temperature range. These results are explained by advanced computer simulations indicating that the obtained emitter saturation current densities are quite close to their intrinsic limit value where the emitter saturation current is solely ruled by Auger recombination. The process developed is industrially relevant and robust.
(Invited) ALD Enabling High-Efficiency Solar Cells
Publisher: The Electrochemical Society
Date: 23-11-2020
DOI: 10.1149/MA2020-02231669MTGABS
Abstract: Atomic layer deposition (ALD) can synthesize materials with atomic-scale precision. The ability to tune the material composition, film thickness with excellent conformality, low-temperature processing, and in-situ real-time monitoring makes this technique very appealing for a wide range of applications. In this contribution, we will show that ALD is already widely used in the manufacturing of industrial silicon solar cells, where ALD aluminum oxide is used for the passivation of the rear of PERC (Passivated Emitter and Rear Contact) solar cells. ALD aluminum oxide layers can also be used to reduce the contact resistance and firing temperature for phosphorous diffused surfaces. We will show that ALD layers can also avoid potential induced degradation (PID, a possible failure mode for large photovoltaic systems) at the solar cell level. ALD capping layers can also be used to reduce light and elevated temperature induced degradation (LeTID), which is a recently identified failure mode for high-efficiency solar cells, by acting as a blocking layer for hydrogen. Finally, we will show that ALD layers are enabling world-record CZTS (copper-zinc-tin-sulphide) solar cells.
Low-temperature Surface Passivation of Moderately Doped Crystalline Silicon by Atomic-layer-deposited Hafnium Oxide Films
Publisher: Elsevier BV
Date: 2012
On the transient amorphous silicon structures during solid phase crystallization
Publisher: Elsevier BV
Date: 03-2013
Good surface passivation of C-Si by high rate plasma deposited silicon oxide
Publisher: IEEE
Date: 05-2006
Optimised Antireflection Coatings using Silicon Nitride on Textured Silicon Surfaces based on Measurements and Multidimensional Modelling
Publisher: Elsevier BV
Date: 2012
Characterisation of thermal annealed WO x on p-type silicon for hole-selective contacts
Publisher: IOP Publishing
Date: 21-07-2017
Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy
Publisher: Elsevier BV
Date: 04-2009
Laser chemical processing (LCP) of poly-silicon thin film on glass substrates
Publisher: Elsevier BV
Date: 2013
Tunnel Oxides Formed by Field-induced Anodization for Silicon Solar Cell Passivation
Publisher: IEEE
Date: 06-2018
Accurate characterization of thin films on rough surfaces by spectroscopic ellipsometry
Publisher: Elsevier BV
Date: 10-2013
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Publisher: AIP Publishing
Date: 23-06-2008
DOI: 10.1063/1.2945287
Abstract: In order to utilize the full potential of solar cells fabricated on n-type silicon, it is necessary to achieve an excellent passivation on B-doped emitters. Experimental studies on test structures and theoretical considerations have shown that a negatively charged dielectric layer would be ideally suited for this purpose. Thus, in this work the negative-charge dielectric Al2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells. With this front surface passivation layer, a confirmed conversion efficiency of 23.2% was achieved. For the open-circuit voltage Voc of 703.6mV, the upper limit for the emitter saturation current density J0e, including the metalized area, has been evaluated to be 29fA∕cm2. This clearly shows that an excellent passivation of highly doped p-type c-Si can be obtained at the device level by applying Al2O3.
The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2010
Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2015
Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon
Publisher: IEEE
Date: 06-2018
Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon
Publisher: American Vacuum Society
Date: 11-2004
DOI: 10.1116/1.1824191
Abstract: Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH4 and SiD4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D2(H2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si–H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420cm−1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480cm−1, respectively.
Impact of Auger recombination parameterisations on predicting silicon wafer solar cell performance
Publisher: Springer Science and Business Media LLC
Date: 29-05-2014
Quantifying the Effect of Nanofeature Size on the Electrical Performance of Black Silicon Emitter by Nanoscale Modeling
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2022
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