David Jamieson

Spatial extent of band bending in diamond due to ion impact as measured by secondary electron emission: Experiment and theory

Publisher: American Physical Society (APS)

Date: 12-04-2006

DOI: 10.1103/PHYSREVB.73.153202

Coherent population trapping in diamond N-V centers at zero magnetic field

Publisher: IEEE

Date: 2006

DOI: 10.1109/CLEO.2006.4628925

Single-shot readout of an electron spin in silicon

Publisher: Springer Science and Business Media LLC

Date: 26-09-2010

DOI: 10.1038/NATURE09392

Abstract: The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important. Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in silicon can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility of eliminating nuclear spins from the bulk crystal. However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor-compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

Toward quantum information processing using EIT in diamond

Publisher: SPIE

Date: 09-02-2006

DOI: 10.1117/12.660189

Advances in Dynamic Analysis PIXE imaging: Correction for spatial variation of pile-up components

Publisher: Elsevier BV

Date: 04-2005

DOI: 10.1016/J.NIMB.2005.01.051

Work function of hydrogen-terminated diamond surfaces under ion impact

Publisher: Elsevier BV

Date: 12-2007

DOI: 10.1016/J.SUSC.2007.06.051

Coherent Control of a SingleSi

Publisher: American Physical Society (APS)

Date: 09-12-2014

DOI: 10.1103/PHYSREVLETT.113.246801

Beating the Thermal Limit of Qubit Initialization with a Bayesian Maxwell’s Demon

Publisher: American Physical Society (APS)

Date: 25-10-2022

DOI: 10.1103/PHYSREVX.12.041008

Modeling of electrostatic gate operations in the Kane solid state quantum computer

Publisher: SPIE

Date: 21-11-2001

DOI: 10.1117/12.449136

High temperature processing of TiO2thin films for application in silicon solar cells

Publisher: American Vacuum Society

Date: 12-02-2004

DOI: 10.1116/1.1647594

Abstract: Low temperature deposited coatings have the potential to reduce the production costs of silicon (Si) photovoltaic devices, such as the buried-contact (BC) solar cell. This work investigates the potential of titanium dioxide (TiO2) films to replace silicon dioxide (SiO2) or nitride coatings currently implemented in the BC fabrication sequence, which requires films to be stable at temperatures up to 1000 °C in a variety of gas atmospheres. The authors demonstrate that: (i) TiO2 films do not reduce the bulk minority carrier lifetime of the silicon wafer after lengthy high temperature processing, however chemical reduction of the TiO2 film can occur if s les are not loaded in an oxygen-containing ambient (ii) a thin SiO2 passivation layer can be formed at the TiO2:Si interface by performing a brief oxidation after TiO2 film deposition (iii) while TiO2 coatings function as a phosphorus diffusion barrier, reactions between TiO2 and the phosphorus source result in irreversible damage to the TiO2 film (iv) phosphorus-doped TiO2 films can act as an n-type dopant source, however further reactions with phosphorus limit the usefulness of the film. Thus, TiO2 films are compatible with the high temperature processing required for BC solar cells, but not with any phosphorus diffusion steps.

Gate-controlled charge transfer in Si:P double quantum dots

Publisher: IOP Publishing

Date: 07-04-2008

DOI: 10.1088/0957-4484/19/19/195402

Abstract: We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single-electron transistor which is capacitively coupled to the dots. We observe a charge stability diagram consistent with the designed many-electron double-dot system and this agrees well with capacitance modelling of the structure. We discuss the significance of these results to the realization of smaller devices which may be used as charge or spin qubits.

Optical properties of silver composite metamaterials

Publisher: Elsevier BV

Date: 05-2007

DOI: 10.1016/J.PHYSB.2006.12.013

Coherent tunneling adiabatic passage with the alternating coupling scheme

Publisher: IOP Publishing

Date: 08-09-2009

DOI: 10.1088/0957-4484/20/40/405402

Abstract: The use of adiabatic passage techniques to mediate particle transport through real space, rather than phase space, is becoming an interesting possibility. We have investigated the properties of coherent tunneling adiabatic passage (CTAP) with alternating tunneling matrix elements. This coupling scheme, not previously considered in the donor in silicon paradigm, provides an interesting route to long-range quantum transport. We introduce simplified coupling protocols and transient eigenspectra as well as a realistic gate design for this transport protocol. Using a pairwise treatment of the tunnel couplings for a five-donor device with 30 nm donor spacings, 120 nm total chain length, we estimate the timescale required for adiabatic operation to be approximately 70 ns, a time well within the measured electron spin and estimated charge relaxation times for phosphorus donors in silicon.

Diamond nanocrystals formed by direct implantation of fused silica with carbon

Publisher: AIP Publishing

Date: 15-09-2001

DOI: 10.1063/1.1388857

Abstract: We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by ion implantation followed by thermal annealing. The production of the diamond nanocrystals and other carbon phases is investigated as a function of ion dose, annealing time, and annealing environment. We observe that the diamond nanocrystals are formed only when the s les are annealed in forming gas (4% H in Ar). Transmission electron microscopy studies show that the nanocrystals range in size from 5 to 40 nm, depending on dose, and are embedded at a depth of only 140 nm below the implanted surface, whereas the original implantation depth was 1450 nm. The bonding in these nanocrystals depends strongly on cluster size, with the smaller clusters predominantly aggregating into cubic diamond structure. The larger clusters, on the other hand, consist of other forms of carbon such as i-carbon and n-diamond and tend to be more defective. This leads to a model for the formation of these clusters which is based on the size dependent stability of the hydrogen-terminated diamond phase compared to other forms of carbon. Additional studies using visible and ultraviolet Raman Spectroscopy, optical absorption, and electron energy loss spectroscopy reveal that most s les contain a mixture of sp2 and sp3 hybridized carbon phases.

Cathodoluminescence microanalysis of diamond nanocrystals in fused silicon dioxide

Publisher: AIP Publishing

Date: 12-2008

DOI: 10.1063/1.3039215

Abstract: MeV carbon ion implantation followed by thermal annealing in a hydrogen-containing atmosphere produces a layer of diamond nanocrystals within fused quartz (SiO2). Cathodoluminescence (CL) microanalysis in a scanning electron microscope has revealed at least three previously unreported low intensity CL emissions from carbon implanted and thermally annealed fused SiO2. The CL emissions are observed at 2.78 eV [full width at half maximum (FWHM) of 0.08 eV], ∼3 eV (FWHM of 0.4 eV), and 3.18 eV (FWHM of 0.11 eV). The peak widths and energies of these emissions are incompatible with any known defects associated with the silicon dioxide host lattice. Nondestructive depth resolved CL microanalysis investigations confirm that these CL emissions originate from the near-surface region, consistent with their association with the layer of diamond nanocrystals.

Phase correlations of elemental maps using nuclear microscopy

Publisher: Elsevier BV

Date: 09-2003

DOI: 10.1016/S0168-583X(03)01082-6

Charge sharing in multi-electrode devices for deterministic doping studied by IBIC

Publisher: Elsevier BV

Date: 10-2011

DOI: 10.1016/J.NIMB.2011.02.044

Implantation of labelled single nitrogen vacancy centers in diamond using N15

Publisher: AIP Publishing

Date: 09-01-2006

DOI: 10.1063/1.2158700

Abstract: Nitrogen-vacancy (NV−) color centers in diamond were created by implantation of 7 keV N15(I=1∕2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV− centers. The hyperfine spectrum from NV−15 arising from implanted N15 can be distinguished from NV−14 centers created by native N14(I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV−15 center. This report ultimately demonstrates a mechanism by which the yield of NV− center formation by nitrogen implantation can be measured.

High resolution imaging with high energy ion beams

Publisher: Elsevier BV

Date: 05-1993

DOI: 10.1016/0168-583X(93)95539-H

Critical components for diamond-based quantum coherent devices

Publisher: IOP Publishing

Date: 12-05-2006

DOI: 10.1088/0953-8984/18/21/S09

Coherent population trapping in diamond N-V centers at zero magnetic field

Publisher: The Optical Society

Date: 2006

DOI: 10.1364/OE.14.007986

Abstract: Coherent population trapping at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and was unexpected following recent experiments demonstrating optical readout of single nitrogen-vacancy electron spins based on cycling transitions. These results demonstrate for the first time that three-level Lambda configurations suitable for proposed quantum information applications can be realized simultaneously for all four orientations of nitrogen-vacancy centers at zero magnetic field.

Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

Publisher: IOP Publishing

Date: 19-05-2008

DOI: 10.1088/0957-4484/19/26/265201

Abstract: We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlO(x) single-electron transistor (SET), were positioned on the substrate surface, capacitively coupled to the buried dots. The in idual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (source-drain DC bias V(SD) = 0) and non-linear (V(SD) ≠ 0) regimes, allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.

Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

Publisher: American Scientific Publishers

Date: 06-2005

DOI: 10.1166/JCTN.2005.105

Combined nuclear microprobe and TEM study of corrosion pit nucleation by intermetallics in aerospace aluminium alloys

Publisher: Elsevier BV

Date: 04-2005

DOI: 10.1016/J.NIMB.2005.01.100

Near-Surface Electrical Characterization of Silicon Electronic Devices Using Focused keV-Range Ions

Publisher: American Physical Society (APS)

Date: 14-09-2022

DOI: 10.1103/PHYSREVAPPLIED.18.034037

Optimizing single-electron transistors as electrometers for high-precision electrometry of charge on quantum dots

Publisher: SPIE

Date: 23-02-2005

DOI: 10.1117/12.583199

Microstructure evolution in carbon-ion implanted sapphire

Publisher: AIP Publishing

Date: 15-01-2010

DOI: 10.1063/1.3284963

Abstract: Carbon ions of MeV energy were implanted into sapphire to fluences of 1×1017 or 2×1017cm−2 and thermally annealed in forming gas (4% H in Ar) for 1h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed s le. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L1) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L2) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L3) beyond the end of range. In the annealed s le some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Publisher: Hindawi Limited

Date: 2012

DOI: 10.1155/2012/272694

Abstract: Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

Dynamic analysis: on-line quantitative PIXE microanalysis and its use in overlap-resolved elemental mapping

Publisher: Elsevier BV

Date: 05-1993

DOI: 10.1016/0168-583X(93)95545-G

Isotopic enrichment of silicon by high fluence 28Si− ion implantation

Publisher: American Physical Society (APS)

Date: 08-01-2021

DOI: 10.1103/PHYSREVMATERIALS.5.014601

Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon

Publisher: Springer Berlin Heidelberg

Date: 2009

DOI: 10.1007/978-3-540-79365-6_9

Storing quantum information for 30 seconds in a nanoelectronic device

Publisher: Springer Science and Business Media LLC

Date: 12-10-2014

DOI: 10.1038/NNANO.2014.211

Abstract: The spin of an electron or a nucleus in a semiconductor naturally implements the unit of quantum information--the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms, or charge and spin fluctuations arising from defects in oxides and interfaces. For materials such as silicon, enrichment of the spin-zero (28)Si isotope drastically reduces spin-bath decoherence. Experiments on bulk spin ensembles in (28)Si crystals have indeed demonstrated extraordinary coherence times. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of in idual (31)P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered (28)Si substrate. The (31)P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy indicates that--contrary to widespread belief--it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

Size dependence of structural stability in nanocrystalline diamond

Publisher: American Physical Society (APS)

Date: 15-12-2000

DOI: 10.1103/PHYSREVB.62.R16360

Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species

Publisher: IOP Publishing

Date: 21-07-2016

DOI: 10.1088/0268-1242/31/8/084004

Metal-free scanning optical microscopy with a fractal fiber probe

Publisher: Optica Publishing Group

Date: 29-01-2009

DOI: 10.1364/OE.17.001772

Abstract: Scanning Near-field Optical Microscopy (SNOM) is the leading instrument used to image optical fields on the nanometer scale. A metal-coating is typically applied to SNOM probes to define a subwavelength aperture and minimize optical leakage, but the presence of such coatings in the near field of the s le can often cause a substantial change in the s le emission properties. For the first time, the authors demonstrate near-field imaging on a metal substrate with a metal-free probe made from a novel structured optical fiber, designed to maximize optical throughput and potentially remove the need for the metal.

A new method for on-line true-elemental imaging using PIXE and the proton microprobe

Publisher: Elsevier BV

Date: 09-1995

DOI: 10.1016/0168-583X(95)00404-1

High signal to noise level ion beam induced charge images

Publisher: AIP Publishing

Date: 11-04-1994

DOI: 10.1063/1.111756

Abstract: The use of MeV α particles to generate ion beam induced charge images with a signal to noise level approximately ten times larger than previously obtained using protons is described. The effect of α particle induced damage on the resultant image contrast is shown and a method of image formation in which the effects of ion induced damage are compensated for is described which enables the use of a higher ion dose.

Rutherford backscattering analysis on thin crystals modelled using a Bloch-wave formulation

Publisher: Elsevier BV

Date: 09-1999

DOI: 10.1016/S0168-583X(99)00495-4

Microbeam imaging at micron and submicron resolution

Publisher: Elsevier BV

Date: 04-1986

DOI: 10.1016/0168-583X(86)90390-3

Surface damage on diamond membranes fabricated by ion implantation and lift-off

Publisher: AIP Publishing

Date: 06-06-2011

DOI: 10.1063/1.3597223

Abstract: Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond

Publisher: Wiley

Date: 08-09-2023

DOI: 10.1002/ADFM.202306601

Single Ion Implantation into Si-Based Devices

Publisher: The Electrochemical Society

Date: 10-2010

DOI: 10.1149/1.3485692

Abstract: Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized PiN structures where ions are directed onto a target area around which a field effect transistor can be formed. The second approach involves monitoring the drain current modulation during ion irradiation. We investigate the detection of both high energy He+ and 14 keV P+ dopants. The stopping of these ions is dominated by ionization and nuclear collisions, respectively. The optimization of the implant energy for a particular device and post-implantation processing are also briefly considered.

Modelling of electrostatic gate operations in the Kane solid state quantum computer

Publisher: Elsevier BV

Date: 12-2002

DOI: 10.1016/S0026-2692(02)00110-6

Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions

Publisher: Elsevier BV

Date: 07-2001

DOI: 10.1016/S0168-583X(01)00349-4

Optical tomographic reconstruction of ion beam induced refractive index changes in silica

Publisher: AIP Publishing

Date: 29-10-2007

DOI: 10.1063/1.2794785

Abstract: Refractive index changes induced by ion beam implantation can be used to produce photonic devices such as waveguides. Here, we relate the measured three-dimensional changes in refractive index produced by ion beam implantation to modeling of the implantation process. We use a quantitative phase microscopic method in conjunction with a tomographic reconstruction process to determine the change in the refractive index distribution within a silica optical fiber that has been selectively implanted with 2.4MeV H+ ions. The index profile is compared with numerical simulations of the ion vacancy and ionization using the stopping range of ions in matter program.

Ion implanted Si:P double dot with gate tunable interdot coupling

Publisher: AIP Publishing

Date: 15-11-2006

DOI: 10.1063/1.2364664

Abstract: We report on milli-Kelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independent of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single dot.

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Publisher: American Association for the Advancement of Science (AAAS)

Date: 03-07-2020

DOI: 10.1126/SCIADV.ABA3442

Abstract: The presence or absence of an electron controls the freezing of the nuclear spin bath coupled to a single-atom qubit in silicon.

Development Of nanowire devices with quantum functionalities

Publisher: IEEE

Date: 12-2014

DOI: 10.1109/COMMAD.2014.7038655

Macrochannelling: Characterisation of nano-structures by ion beam analysis

Publisher: Elsevier BV

Date: 04-2005

DOI: 10.1016/J.NIMB.2005.01.046

An electrically driven single-atom “flip-flop” qubit

Publisher: American Association for the Advancement of Science (AAAS)

Date: 10-02-2023

DOI: 10.1126/SCIADV.ADD9408

Abstract: The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here, we circumvent this hurdle by operating a single-atom “flip-flop” qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems and to the hyperpolarization of nuclear spin ensembles. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.

Scanning ion deep level transient spectroscopy

Publisher: Elsevier BV

Date: 09-1999

DOI: 10.1016/S0168-583X(99)00329-8

Oxide formation on aluminium alloys in boiling deionised water and NaCl, CeCl3 and CrCl3 solutions

Publisher: Elsevier BV

Date: 06-2003

DOI: 10.1016/S0010-938X(02)00209-3

Reproducibility and Gap Control of Superconducting Flux Qubits

Publisher: American Physical Society (APS)

Date: 20-12-2022

DOI: 10.1103/PHYSREVAPPLIED.18.064062

Spatial adiabatic passage as a quantum wire

Publisher: IEEE

Date: 02-2008

DOI: 10.1109/ICONN.2008.4639270

Ion beam lithograpy using a nano-aperture

Publisher: Elsevier BV

Date: 07-2007

DOI: 10.1016/J.NIMB.2007.02.057

Coherent Tunneling Adiabatic Passage with the alternating coupling scheme

Publisher: IEEE

Date: 02-2008

DOI: 10.1109/ICONN.2008.4639271

The design of a versatile scanning proton microprobe of high resolution and efficiency

Publisher: Elsevier BV

Date: 03-1988

DOI: 10.1016/0168-583X(88)90006-7

Dual resonance mechanisms facilitating enhanced optical transmission in coaxial waveguide arrays

Publisher: The Optical Society

Date: 11-04-2008

DOI: 10.1364/OL.33.000821

Abstract: We experimentally and computationally demonstrate high transmission through arrays of coaxial apertures with different geometries and arrangements in silver films. By studying both periodic and random arrangements of apertures, we were able to isolate transmission enhancement phenomena owing to surface plasmon effects from those owing to the excitation of cylindrical surface plasmons within the apertures themselves.

Single-Shot Readout and Relaxation of Singlet and Triplet States in Exchange-Coupled

Publisher: American Physical Society (APS)

Date: 09-06-2014

DOI: 10.1103/PHYSREVLETT.112.236801

High-fidelity adiabatic inversion of a P-31 electron spin qubit in natural silicon

Publisher: AIP Publishing

Date: 03-03-2014

DOI: 10.1063/1.4867905

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

Publisher: Wiley

Date: 12-11-2022

DOI: 10.1002/ADMA.202103235

Abstract: Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For ex le, group‐V donors implanted in isotopically purified 28 Si crystals are attractive for large‐scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31 P, hyperfine clock transitions in 209 Bi or electrically controllable 123 Sb nuclear spins. Promising architectures require the ability to fabricate arrays of in idual near‐surface dopant atoms with high yield. Here, an on‐chip detector electrode system with 70 eV root‐mean‐square noise (≈20 electrons) is employed to demonstrate near‐room‐temperature implantation of single 14 keV 31 P + ions. The physics model for the ion–solid interaction shows an unprecedented upper‐bound single‐ion‐detection confidence of 99.85 ± 0.02% for near‐surface implants. As a result, the practical controlled silicon doping yield is limited by materials engineering factors including surface gate oxides in which detected ions may stop. For a device with 6 nm gate oxide and 14 keV 31 P + implants, a yield limit of 98.1% is demonstrated. Thinner gate oxides allow this limit to converge to the upper‐bound. Deterministic single‐ion implantation can therefore be a viable materials engineering strategy for scalable dopant architectures in silicon devices.

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

Publisher: IOP Publishing

Date: 18-03-2013

DOI: 10.1088/0957-4484/24/14/145304

Abstract: Solid state electronic devices fabricated in silicon employ many ion implantation steps in their fabrication. In nanoscale devices deterministic implants of dopant atoms with high spatial precision will be needed to overcome problems with statistical variations in device characteristics and to open new functionalities based on controlled quantum states of single atoms. However, to deterministically place a dopant atom with the required precision is a significant technological challenge. Here we address this challenge with a strategy based on stepped nanostencil lithography for the construction of arrays of single implanted atoms. We address the limit on spatial precision imposed by ion straggling in the nanostencil-fabricated with the readily available focused ion beam milling technique followed by Pt deposition. Two nanostencils have been fabricated a 60 nm wide aperture in a 3 μm thick Si cantilever and a 30 nm wide aperture in a 200 nm thick Si3N4 membrane. The 30 nm wide aperture demonstrates the fabricating process for sub-50 nm apertures while the 60 nm aperture was characterized with 500 keV He(+) ion forward scattering to measure the effect of ion straggling in the collimator and deduce a model for its internal structure using the GEANT4 ion transport code. This model is then applied to simulate collimation of a 14 keV P(+) ion beam in a 200 nm thick Si3N4 membrane nanostencil suitable for the implantation of donors in silicon. We simulate collimating apertures with widths in the range of 10-50 nm because we expect the onset of J-coupling in a device with 30 nm donor spacing. We find that straggling in the nanostencil produces mis-located implanted ions with a probability between 0.001 and 0.08 depending on the internal collimator profile and the alignment with the beam direction. This result is favourable for the rapid prototyping of a proof-of-principle device containing multiple deterministically implanted dopants.

Extraordinary optical transmission with coaxial apertures

Publisher: AIP Publishing

Date: 18-06-2007

DOI: 10.1063/1.2751120

Abstract: Recently it has been predicted that “cylindrical” surface plasmons (CSP’s) on cylindrical interfaces of coaxial ring apertures produce a different form of extraordinary optical transmission that extends to ever increasing wavelengths as the dielectric ring narrows. This letter presents experimental confirmation of this CSP assisted extraordinary transmission. Nanoarrays of submicron coaxial apertures are fabricated in a thin silver film on a glass substrate and far-field transmission spectra are measured. The experimental spectrum is in close agreement with predictions from finite-difference time-domain simulations and CSP dispersion theory. The role of cylindrical surface plasmons in producing extraordinary transmission is thus confirmed.

Lattice location of nickel in diamond by RBS channelling and PIXE

Publisher: Wiley

Date: 28-10-2010

DOI: 10.1002/PSSA.201026118

Precision tomography of a three-qubit donor quantum processor in silicon.

Publisher: Springer Science and Business Media LLC

Date: 19-01-2022

DOI: 10.1038/S41586-021-04292-7

Abstract: Nuclear spins were among the first physical platforms to be considered for quantum information processing

Formation of carbon nanoclusters by implantation of keV carbon ions in fused silica followed by thermal annealing

Publisher: SPIE

Date: 23-02-2005

DOI: 10.1117/12.582855

A single-atom electron spin qubit in silicon

Publisher: Springer Science and Business Media LLC

Date: 09-2012

DOI: 10.1038/NATURE11449

Abstract: A single atom is the prototypical quantum system, and a natural candidate for a quantum bit, or qubit--the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the nitrogen-vacancy-centre point defect. Solid-state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger-scale quantum processors. Coherent control of spin qubits has been achieved in lithographically defined double quantum dots in both GaAs (refs 3-5) and Si (ref. 6). However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent in atomic spin qubits. Here we demonstrate the coherent manipulation of an in idual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot read-out. We use electron spin resonance to drive Rabi oscillations, and a Hahn echo pulse sequence reveals a spin coherence time exceeding 200 µs. This time should be even longer in isotopically enriched (28)Si s les. Combined with a device architecture that is compatible with modern integrated circuit technology, the electron spin of a single phosphorus atom in silicon should be an excellent platform on which to build a scalable quantum computer.

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Publisher: Springer Science and Business Media LLC

Date: 08-01-2021

DOI: 10.1038/S41467-020-20424-5

Abstract: Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single-donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of 31 P donors implanted in silicon. The coupling strength, J = 32.06 ± 0.06 MHz, is measured spectroscopically with high precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling A ≈ 90 MHz which detunes the two electrons, a native two-qubit controlled-rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of J , which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the metal-oxide-semiconductor fabrication protocols commonly used in the classical electronics industry.

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

Publisher: AIP Publishing

Date: 09-05-2005

DOI: 10.1063/1.1925320

Abstract: We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV P31 ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.

Ion-Beam-Assisted Lift-Off Technique for Three-Dimensional Micromachining of Freestanding Single-Crystal Diamond

Publisher: Wiley

Date: 17-10-2005

DOI: 10.1002/ADMA.200500752

High-fidelity readout and control of a nuclear spin qubit in silicon

Publisher: Springer Science and Business Media LLC

Date: 04-2013

DOI: 10.1038/NATURE12011

Abstract: Detection of nuclear spin precession is critical for a wide range of scientific techniques that have applications in erse fields including analytical chemistry, materials science, medicine and biology. Fundamentally, it is possible because of the extreme isolation of nuclear spins from their environment. This isolation also makes single nuclear spins desirable for quantum-information processing, as shown by pioneering studies on nitrogen-vacancy centres in diamond. The nuclear spin of a (31)P donor in silicon is very promising as a quantum bit: bulk measurements indicate that it has excellent coherence times and silicon is the dominant material in the microelectronics industry. Here we demonstrate electrical detection and coherent manipulation of a single (31)P nuclear spin qubit with sufficiently high fidelities for fault-tolerant quantum computing. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate quantum non-demolition and electrical single-shot readout of the nuclear spin with a readout fidelity higher than 99.8 percent-the highest so far reported for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radio-frequency pulses. For an ionized (31)P donor, we find a nuclear spin coherence time of 60 milliseconds and a one-qubit gate control fidelity exceeding 98 percent. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear-spin-based quantum-information processing.

Fabrication of single atom nanoscale devices by ion implantation

Publisher: IEEE

Date: 2006

DOI: 10.1109/ICONN.2006.340678

Single atom Si nanoelectronics using controlled single-ion implantation

Publisher: Elsevier BV

Date: 03-2005

DOI: 10.1016/J.MEE.2004.12.096

Probe and control of the reservoir density of states in single-electron devices

Publisher: American Physical Society (APS)

Date: 08-04-2010

DOI: 10.1103/PHYSREVB.81.161304

Focused microprobes of high energy ions — versatile analytical probes for surfaces, interfaces and devices

Publisher: Elsevier BV

Date: 2001

DOI: 10.1016/S0169-4332(00)00737-6

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Publisher: American Physical Society (APS)

Date: 14-08-2009

DOI: 10.1103/PHYSREVB.80.081307

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Publisher: American Chemical Society (ACS)

Date: 12-2009

DOI: 10.1021/NL901635J

Abstract: We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

Parallel beams from nuclear microprobe lens systems

Publisher: Elsevier BV

Date: 07-2001

DOI: 10.1016/S0168-583X(01)00563-8

The new CSIRO–GEMOC nuclear microprobe: First results, performance and recent applications

Publisher: Elsevier BV

Date: 07-2001

DOI: 10.1016/S0168-583X(01)00548-1

Pulsed laser annealing of P-implanted diamond

Publisher: AIP Publishing

Date: 11-10-1993

DOI: 10.1063/1.110592

Abstract: Diamond deeply implanted with 4 MeV P ions to a dose of 1×1015/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.

Imaging with ionoluminescence (IL) in a nuclear microprobe

Publisher: Elsevier BV

Date: 05-1993

DOI: 10.1016/0168-583X(93)95543-E

Top-down pathways to devices with few and single atoms placed to high precision

Publisher: IOP Publishing

Date: 28-06-2010

DOI: 10.1088/1367-2630/12/6/065016

Neuropsychiatry: A synthesis of clinical and scientific fields for disorders of mind and body

Publisher: SAGE Publications

Date: 25-11-2016

DOI: 10.1177/1039856216673447

Scanning ion deep level transient spectroscopy: I. Theory

Publisher: IOP Publishing

Date: 17-03-2006

DOI: 10.1088/0022-3727/39/7/003

Single-atom spin qubits in silicon

Publisher: IEEE

Date: 12-2014

DOI: 10.1109/COMMAD.2014.7038688

Scanning ion deep level transient spectroscopy: II. Ion irradiated Au–Si Schottky junctions

Publisher: IOP Publishing

Date: 17-03-2006

DOI: 10.1088/0022-3727/39/7/004

Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate

Publisher: IEEE

Date: 12-2012

DOI: 10.1109/COMMAD.2012.6472416

Lattice location of gold in natural pyrite crystals

Publisher: Elsevier BV

Date: 04-1999

DOI: 10.1016/S0168-583X(98)00965-3

Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation

Publisher: SPIE

Date: 23-02-2005

DOI: 10.1117/12.583284

Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scattering

Publisher: Elsevier BV

Date: 04-2001

DOI: 10.1016/S0168-583X(00)00675-3

Characterization of three-dimensional microstructures in single-crystal diamond

Publisher: Elsevier BV

Date: 10-2006

DOI: 10.1016/J.DIAMOND.2006.01.018

ION-BEAM-INDUCED LUMINESCENCE FROM DIAMOND AND OTHER CRYSTALS FROM A NUCLEAR MICROBEAM

Publisher: Elsevier BV

Date: 03-1994

DOI: 10.1016/0168-583X(94)95922-6

Nuclear microprobe analysis of U-doped (Bi,Pb)2Sr2Ca2Cu3Oy/Ag superconducting tapes

Publisher: Elsevier BV

Date: 05-2002

DOI: 10.1016/S0168-583X(01)01318-0

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Publisher: Elsevier BV

Date: 04-2006

DOI: 10.1016/J.MEE.2006.01.173

Hypervelocity dust impact craters on photovoltaic devices imaged by ion beam induced charge

Publisher: Elsevier BV

Date: 04-2015

DOI: 10.1016/J.NIMB.2014.12.069

High resolution techniques for the scanning proton microprobe

Publisher: Elsevier BV

Date: 05-1991

DOI: 10.1016/0168-583X(91)95011-2

Progress in silicon-based quantum computing

Publisher: The Royal Society

Date: 15-07-2003

DOI: 10.1098/RSTA.2003.1221

Abstract: We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.

Fabrication of Ultrathin Single‐Crystal Diamond Membranes

Publisher: Wiley

Date: 16-12-2008

DOI: 10.1002/ADMA.200801460

P2 dimer implantation in silicon: A molecular dynamics study

Publisher: Elsevier BV

Date: 10-2006

DOI: 10.1016/J.NIMB.2006.04.172

Optical properties of nanoscale annular array metamaterials

Publisher: SPIE

Date: 31-08-2006

DOI: 10.1117/12.679210

Controlled single electron transfer between Si:P dots

Publisher: AIP Publishing

Date: 08-05-0001

DOI: 10.1063/1.2203740

Abstract: We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus-doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc and rf modes as charge detectors. With the possibility to scale the dots down to a few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

Plasmonic nanoresonant materials

Publisher: SPIE

Date: 21-12-2007

DOI: 10.1117/12.772641

Filiform corrosion imaged beneath protection layers on Al alloys

Publisher: Elsevier BV

Date: 05-2002

DOI: 10.1016/S0168-583X(01)01200-9

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Publisher: AIP Publishing

Date: 28-06-2010

DOI: 10.1063/1.3458783

Abstract: We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

Single-electron transistor coupled to a silicon nano-MOSFET

Publisher: SPIE

Date: 23-02-2005

DOI: 10.1117/12.583293

Characterization of a novel diamond-based microdosimeter prototype for radioprotection applications in space environments

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Date: 12-2012

DOI: 10.1109/TNS.2012.2218131

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Publisher: American Physical Society (APS)

Date: 15-06-2010

DOI: 10.1103/PHYSREVB.81.235318

Creating diamond color centers for quantum optical applications

Publisher: Elsevier BV

Date: 11-2007

DOI: 10.1016/J.DIAMOND.2007.09.009

Creation and Characterization of Buried Microstructures in Diamond by Ion Implantation

Publisher: IEEE

Date: 07-2006

DOI: 10.1109/ICONN.2006.340617

New problems in nuclear microprobe analysis of materials

Publisher: Elsevier BV

Date: 09-1999

DOI: 10.1016/S0168-583X(99)00323-7

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0775545

Start Date: 2007

End Date: 06-2010

Amount: $445,000.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP220103467

Start Date: 09-2022

End Date: 09-2025

Amount: $513,395.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP0344504

Start Date: 2003

End Date: 12-2006

Amount: $305,000.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP0663724

Start Date: 2006

End Date: 12-2008

Amount: $446,040.00

Funder: Australian Research Council

Learned Academies Special Projects - Grant ID: LS0900004

Start Date: 2009

End Date: 12-2011

Amount: $120,000.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP190102852

Start Date: 04-2019

End Date: 11-2022

Amount: $430,000.00

Funder: Australian Research Council

Linkage - International - Grant ID: LX0667284

Start Date: 2006

End Date: 12-2009

Amount: $75,000.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP150102703

Start Date: 03-2015

End Date: 11-2018

Amount: $384,900.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0775679

Start Date: 2007

End Date: 12-2007

Amount: $700,000.00

Funder: Australian Research Council

ARC Centres Of Excellence - Grant ID: CE1101027

Start Date: 07-2011

End Date: 12-2017

Amount: $24,500,000.00

Funder: Australian Research Council

ARC Centres Of Excellence - Grant ID: CE170100012

Start Date: 06-2018

End Date: 05-2025

Amount: $33,700,000.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0668381

Start Date: 2006

End Date: 12-2007

Amount: $750,000.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE180100150

Start Date: 05-2018

End Date: 12-2019

Amount: $595,280.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0882878

Start Date: 2008

End Date: 12-2009

Amount: $350,000.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0231228

Start Date: 2001

End Date: 12-2001

Amount: $500,000.00

Funder: Australian Research Council

Research Networks - Grant ID: RN0458455

Start Date: 07-2004

End Date: 06-2009

Amount: $1,500,000.00

Funder: Australian Research Council

Linkage Infrastructure, Equipment And Facilities - Grant ID: LE180100190

Start Date: 05-2018

End Date: 06-2021

Amount: $205,000.00

Funder: Australian Research Council

Discovery Projects - Grant ID: DP1096600

Start Date: 2010

End Date: 07-2013

Amount: $310,000.00

Funder: Australian Research Council

Special Research Initiatives - Grant ID: SR0354735

Start Date: 2003

End Date: 12-2003

Amount: $10,000.00

Funder: Australian Research Council

ARC Centres Of Excellence - Grant ID: CE0348250

Start Date: 2003

End Date: 06-2011

Amount: $24,100,000.00

Funder: Australian Research Council

Special Research Initiatives - Grant ID: SR0354821

Start Date: 12-2003

End Date: 12-2004

Amount: $30,000.00

Funder: Australian Research Council

Special Research Initiatives - Grant ID: SR0354682

Start Date: 12-2003

End Date: 12-2004

Amount: $10,000.00

Funder: Australian Research Council

Research Networks - Grant ID: RN0459611

Start Date: 07-2004

End Date: 12-2010

Amount: $1,900,000.00

Funder: Australian Research Council