ORCID Profile
0000-0001-9414-8492
Current Organisation
University of Nottingham
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Publisher: AIP Publishing
Date: 21-11-2013
DOI: 10.1063/1.4831947
Abstract: We report room-temperature Raman studies of strained (100) and (311)B GaAs1−xBix epitaxial layers for x ≤ 0.039. The Raman spectra exhibit a two-mode behavior, as well as disorder-activated GaAs-like phonons. The experimental results show that the GaAs-like LO(Γ) mode experiences a strong composition-dependent redshift as a result of alloying. The peak frequency decreases linearly from the value for pure GaAs (∼293 cm−1) with the alloyed Bi fraction x and the introduced in-plane lattice strain ε∥, by ΔωLO=Δωalloy−Δωstrain. X-ray diffraction measurements are used to determine x and ε∥ allowing Δωalloy to be decoupled and is estimated to be −12(±4) cm−1/x for (100) GaAs1−xBix. ΔωLO is measured to be roughly double for s les grown on (311)B-oriented substrates to that of (100) GaAs. This large difference in redshift is accounted for by examining the Bi induced strain, effects from alloying, and defects formed during high-index (311)B crystal growth.
Publisher: Royal Society of Chemistry (RSC)
Date: 2015
DOI: 10.1039/C5NR06676J
Abstract: In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes.
Publisher: Institution of Engineering and Technology (IET)
Date: 09-11-1995
DOI: 10.1049/EL:19951366
Publisher: Elsevier BV
Date: 02-1996
Publisher: IOP Publishing
Date: 07-1993
Publisher: Elsevier BV
Date: 03-1997
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-1997
DOI: 10.1109/3.594869
Publisher: The Optical Society
Date: 07-05-2014
DOI: 10.1364/OE.22.011680
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for Mohamed Henini.