ORCID Profile
0000-0003-3230-0932
Current Organisations
University of Tokyo
,
King Abdullah University of Science and Technology
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Publisher: Springer Science and Business Media LLC
Date: 18-07-2022
DOI: 10.1038/S41467-022-31886-0
Abstract: Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm 2 /Vs (~800 cm 2 /Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.
Publisher: Wiley
Date: 20-09-2020
Publisher: American Chemical Society (ACS)
Date: 25-03-2021
Publisher: American Chemical Society (ACS)
Date: 04-2020
Publisher: Research Square Platform LLC
Date: 20-03-2023
DOI: 10.21203/RS.3.RS-2630063/V1
Abstract: Atomically thin two-dimensional (2D) materials have long been considered as ideal platforms for developing separation membranes. However, it is difficult to generate uniform subnanometer pores over large areas on 2D materials. Herein, we report that the well-defined defect structure of monolayer MoS 2 , namely, eight-membered ring (8-MR) pores typically formed at the boundaries of two antiparallel grains, can serve as molecular sieves for efficient water/ion separation. The 8-MR pores (4.2 × 2.4 Å) in monolayer MoS 2 allow rapid single-file water transport while rejecting various hydrated ions. Further, the density of grain boundaries and, consequently, the density of pores can be tuned by regulating the nucleation density and size of MoS 2 grains during the chemical vapor deposition process. The optimized MoS 2 membrane exhibited an ultrahigh water/NaCl selectivity of ~6.5 × 10 4 at a water permeance of 232 mol m −2 h −1 bar −1 , outperforming the state-of-the-art desalination membranes. When used for direct hydrogen production from seawater by combining the forward osmosis and electrochemical water splitting processes, the membrane achieved ~40 times the energy conversion efficiency of commercial polymeric membranes. It also exhibited a rapid and selective proton transport behavior desirable for fuel cells and electrolysis. The bottom-up approach of creating precise pore structures on atomically thin films via grain boundary engineering presents a promising route for producing large-area membranes suitable for various applications.
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9NH00260J
Abstract: Bilayer WSe 2 nuclei were initially grown along the atomic steps of a sapphire substrate, resembling a “graphoepitaxial mechanism” and gradually formed into overlapped 2H stacked WSe 2 bilayers.
Publisher: IEEE
Date: 03-12-2022
Publisher: Wiley
Date: 30-05-2019
Abstract: Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α-In
Publisher: Wiley
Date: 25-03-2019
Abstract: 2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe
Location: Saudi Arabia
Location: United States of America
No related grants have been discovered for VIncent Tung.