ORCID Profile
0000-0002-4953-2142
Current Organisation
Technische Universität Chemnitz
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Publisher: American Physical Society (APS)
Date: 09-02-2006
Publisher: American Physical Society (APS)
Date: 30-06-2005
Publisher: American Chemical Society (ACS)
Date: 05-12-2014
DOI: 10.1021/NL503614V
Abstract: Time- and angle-resolved photoemission measurements on two doped graphene s les displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
Publisher: Elsevier BV
Date: 06-2005
Publisher: AIP Publishing
Date: 26-08-2003
DOI: 10.1063/1.1609053
Abstract: Al 2 O 3 films were deposited as alternative gate dielectric on hydrogen-terminated 6H-SiC(0001) by atomic layer chemical vapor deposition and characterized by photoelectron spectroscopy (PES) and admittance measurements. The PES results indicate an abrupt interface free of significant Si–suboxide contributions where the Al2O3 layer is connected to SiC by bridging oxygen atoms. The admittance measurements yield an interface state density which is lower than that of the thermally formed oxide and show in particular no increase toward the conduction band edge. Furthermore, a nearly symmetrical band alignment of Al2O3 on 6H-SiC with offsets of 2.2 and 1.8 eV is determined for the valence and conduction bands, respectively. This makes Al2O3 a serious competitor to thermal oxides as gate insulator in SiC devices.
Publisher: AIP Publishing
Date: 17-06-2013
DOI: 10.1063/1.4811248
Abstract: We demonstrate that the intrinsic electron doping of monolayer epitaxial graphene on SiC(0001) can be tuned in a controlled fashion to holes via molecular doping with the fluorinated fullerene C60F48. In situ angle-resolved photoemission is used to measure an upward shift of (0.6 ± 0.05) eV in the Dirac point from −0.43 eV to +0.17 eV relative to the Fermi level. The carrier density is observed to change from n ∼ (1 × 1013 ± 0.1 × 1013) cm−2 to p ∼ (2 × 1012 ± 1 × 1012) cm−2. We introduce a doping model employing Fermi-Dirac statistics which explicitly takes temperature and the highly correlated nature of molecular orbitals into account. The model describes the observed doping behaviour in our experiment and readily explains why net p-type doping was not achieved in a previous study [Coletti et al., Phys. Rev. B 81, 8 (2010)] which used tetrafluorotetra-cyanoquinodimethane (F4-TCNQ).
Publisher: American Physical Society (APS)
Date: 04-02-2022
Publisher: Elsevier BV
Date: 09-2006
Publisher: Elsevier BV
Date: 04-2015
Publisher: American Physical Society (APS)
Date: 17-05-2006
Publisher: Elsevier BV
Date: 09-2006
Publisher: Elsevier BV
Date: 06-2005
Publisher: IOP Publishing
Date: 07-2013
Publisher: American Physical Society (APS)
Date: 25-06-2014
No related grants have been discovered for Thomas Seyller.