ORCID Profile
0000-0003-4389-2080
Current Organisation
Fritz-Haber-Institut der Max-Planck-Gesellschaft
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Publisher: American Physical Society (APS)
Date: 13-03-2001
Publisher: International Union of Crystallography (IUCr)
Date: 09-1999
Publisher: American Chemical Society (ACS)
Date: 30-07-2021
Publisher: Informa UK Limited
Date: 09-1999
Publisher: American Chemical Society (ACS)
Date: 21-04-2020
Publisher: IOP Publishing
Date: 10-11-2016
Publisher: American Chemical Society (ACS)
Date: 09-02-2021
Publisher: World Scientific Pub Co Pte Lt
Date: 12-1998
DOI: 10.1142/S0218625X98001626
Abstract: At present the only surface electron microscope which allows true characteristic XPEEM (photoemission electron microscopy using synchrotron radiation) and structural characterization is the spectroscopic LEEM developed at the Technical University Clausthal in the early nineties. This instrument has in the past been used mainly for LEEM studies of various surface and thin film phenomena, because it had very limited access to synchrotron radiation. Now the microscope is connected quasipermanently to the undulator beamline 6.2 at the storage ring ELETTRA, operating successfully since the end of 1996 under the name SPELEEM (Spectroscopic PhotoEmission and Low Energy Electron Microscope). The high brightness of the ELETTRA light source, together with an optimized instrument, results in a spatial resolution better than 25 nm and an energy resolution better than 0.5 eV in the XPEEM mode. The instrument can be used alternately for XPEEM, LEEM, LEED (low energy electron diffraction), MEM (mirror electron microscopy) and other imaging modes, depending upon the particular problem studied. The combination of these imaging modes allows a comprehensive characterization of the specimen. This is of particular importance when the chemical identification of structurar features is necessary for the understanding of a surface or thin film process. In addition, PED (photoelectron diffraction) and VPEAD (valence photoelectron angular distribution) of small selected areas give local atomic configuration and band structure information, respectively.
Publisher: American Chemical Society (ACS)
Date: 13-02-2017
Abstract: We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.
Publisher: American Vacuum Society
Date: 11-2001
DOI: 10.1116/1.1410942
Abstract: The differences in valence band structure and work function between heteroepitaxial nanocrystals and the surrounding substrate were measured with a spectroscopic photoemission and low energy electron microscope which allows laterally resolved photoemission spectroscopy. The nanocrystals were obtained by depositing nominally 2 and 4 monolayers (ML) of InAs on a Se-terminated GaAs(001) surface. The s les showed differences in the valence band edge energy and work function both between nanocrystals and substrate as well as between 2 and 4 ML. We suggest that Se termination of the nanocrystals is the reason for these differences.
Publisher: Elsevier BV
Date: 05-1999
Publisher: Trans Tech Publications, Ltd.
Date: 08-2000
Location: Germany
Location: Germany
No related grants have been discovered for Thomas Schmidt.