ORCID Profile
0000-0003-1383-1623
Current Organisation
Nanyang Technological University
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Publisher: American Chemical Society (ACS)
Date: 09-03-2023
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/C9NH00719A
Abstract: The combination of graphene oxide and cellulose produces shape programmable active origamis, which are able to transform among their multi-stable morphs, including 3D soft robotic architectures, mechanical metamaterials and biomimetic analogies.
Publisher: Elsevier BV
Date: 04-2009
DOI: 10.1016/J.JCIS.2009.01.011
Abstract: In this work we describe a general method for formation of Pt nanoparticles within an ultrathin film matrix and its application for non-volatile memory (NVM). Our approach involves the formation of Pt nanoparticles within ultrathin film matrix formed by covalent layer-by-layer (LbL) assembly of pyromellitic dianhydride (PMDA) and second generation of polyamidoamine (PAMAM) dendrimer in supercritical carbon dioxide (SCCO(2)). The hyperbranched component in the film structure serves to confine nanoparticle size and improve distribution. The memory effect and retention capability is demonstrated by means of a metal-insulator semiconductor (MIS) device fabricated using the nanoparticle-laden thin film as the insulating layer.
Publisher: Elsevier BV
Date: 02-2012
Publisher: Wiley
Date: 21-09-2010
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2NR12134D
Abstract: We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal-insulator-semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 V. Aggregates of citrate stabilized gold nanoparticles were obtained by directed electrostatic self-assembly onto an underlying nanopattern of positively charged centers. The underlying nanopatterns consist of amine functionalized gold nanoparticle arrays formed using hiphilic diblock copolymer reverse micelles as templates. The hierarchical self-organization leads to a twelve-fold increase in the number density of the gold nanoparticles and therefore significantly increases the charge storage centers for the MIS device. The MIS structure showed counterclockwise C-V hysteresis curves indicating a good memory effect. A memory window of 1 V was obtained at a low biasing voltage of ±4 V. Furthermore, C-t measurements conducted after applying a charging bias of 4 V showed that the charge was retained beyond 20,000 s. The proposed strategy can be readily adapted for fabricating next generation solution processible non-volatile memory devices.
Publisher: AIP Publishing
Date: 03-11-2008
DOI: 10.1063/1.3013845
Abstract: High performance organic field effect transistors using a solution-processable processed trilayer sol-gel silica gate dielectric architecture fabricated on plastic substrates exhibited low driving voltages of −3.0V, high saturation mobilities of ∼3.5cm2∕Vs, and on-off current ratio of 105. The enhancement in field effect mobility is attributed to improved dielectric-semiconductor interfacial morphology and increased capacitance of the tristratal dielectric. The pentacene devices displayed no signs of electrical degradation upon bending through a bending radius of 24mm, 2.27% strain. The slight increase in the drain currents upon bending strain was investigated using Raman spectroscopy, which revealed enhanced in-phase intermolecular coupling.
Publisher: Elsevier BV
Date: 11-2009
Publisher: American Chemical Society (ACS)
Date: 10-11-2011
DOI: 10.1021/AM201022V
Abstract: This work reports a versatile approach for enhancing the stability of nonvolatile memory devices through covalent assembly of functionalized gold nanoparticles. 11-mercapto-1-undecanol functionalized gold nanoparticles (AuNPs) with a narrow size distribution and particle size of about 5 nm were synthesized. Then, the AuNPs were immobilized on a SiO(2) substrate using a functionalized polymer as a surface modifier. Microscopic and spectroscopic techniques were used to characterize the AuNPs and their morphology before and after immobilization. Finally, a metal-insulator-semiconductor (MIS) type memory device with such covalently anchored AuNPs as a charge trapping layer was fabricated. The MIS structure showed well-defined counterclockwise C-V hysteresis curves indicating a good memory effect. The flat band voltage shift was 1.64 V at a swapping voltage between ±7 V. Furthermore, the MIS structure showed a good retention characteristic up to 20,000 s. The present synthetic route to covalently immobilize gold nanoparticles system will be a step towards realization for the nanoparticle-based electronic devices and related applications.
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2PY00612J
Publisher: American Chemical Society (ACS)
Date: 02-08-2012
DOI: 10.1021/JP3008283
Abstract: This work reports a versatile approach utilizing covalent assembly of functionalized gold nanoparticles for organic field-effect transistor (OFET) based memory devices. 11-Mercapto-1-undecanol functionalized gold nanoparticles (AuNPs) having size of 5 ± 0.5 nm were synthesized and immobilized onto SiO(2) substrate through covalent binding using a functionalized polymer as a surface modifier. The pentacene OFET-based memory devices utilizing such covalently bound gold nanoparticles with nanoparticle density of 5 × 10(11) cm(-2) exhibited a large memory window (7.7 V), high on/off ratio between memory states (10(5)), and long retention time (>10,000 s). The present synthetic route for memory devices incorporating covalently immobilized gold nanoparticles has several advantages such as solution processable, enhanced device stability, low-cost, and low-temperature process and will be a step toward realization for low-cost, lightweight, flexible, logic display driver, and flash memory applications.
No related grants have been discovered for Pooi See Lee.