ORCID Profile
0000-0003-3090-1398
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Publisher: Elsevier BV
Date: 07-2007
Publisher: Royal Society of Chemistry (RSC)
Date: 2013
DOI: 10.1039/C3AN90101G
Publisher: AIP Publishing
Date: 09-2010
DOI: 10.1063/1.3482212
Abstract: We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as “laboratory on a chip” and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO2/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.
No related grants have been discovered for Francois Rossi.