ORCID Profile
0000-0002-7489-9640
Current Organisations
University of Southern Queensland
,
Hanoi University of Science and Technology
,
Griffith University
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Mechanical Engineering | Microelectromechanical Systems (MEMS) | Electronic and magnetic properties of condensed matter; superconductivity | Materials engineering | Nanomaterials | Functional materials |
ANZSRC Socio-Economic Objective (SEO)
Pipeline Transport | Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Integrated Circuits and Devices | Expanding Knowledge in Technology |
Related Links
Publications
Development of Boat Model Powered by Electro-Hydrodynamic Propulsion System
Publisher: IEEE
Date: 15-01-2023
Development of a Vibrating-Reed MEMS Charge Sensor on Silicon-on-Glass Technology
Publisher: Springer International Publishing
Date: 12-2018
Thermal Flow Sensors for Harsh Environments
Publisher: MDPI AG
Date: 14-07-2017
DOI: 10.20944/PREPRINTS201707.0031.V1
Abstract: Flow sensing in hostile environment is of increasing interest for applications in automotive, aerospace, and chemical and resource industries. Compared to their counterparts, thermal flow sensors are attractive candidates due to the ease of fabrication, lack of moving parts and higher sensitivity. Recently, a number of thermal flow sensor prototypes have been reported in the literature demonstrating the measurement of fluid flows under hostile conditions. This paper summarizes the concept of thermal flow sensing, operational modes and transduction mechanisms. Then, the choice of materials and their corresponding properties are presented in details. The paper also reports recent progress in the development of thermal flow sensors for harsh environment. In addition, the issues and considerations in packaging are reviewed. Finally, we conclude the review with the future prospects.
Soft ionic liquid multi-point touch sensor
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9RA00322C
Abstract: Here we report on an ionic liquid based soft pressure sensor. Our use of smart structures and ease of fabrication processes enable the development of a soft and low-cost sensor with multiple-point sensing capabilities on a single chip.
Strong, Ultrafast, Reprogrammable Hydrogel Actuators with Muscle-Mimetic Aligned Fibrous Structures
Publisher: American Chemical Society (ACS)
Date: 23-09-2021
Seebeck coefficient in SiC/Si heterojunction for self-powered thermal sensor
Publisher: IEEE
Date: 31-10-2021
A Wearable, Bending-Insensitive Respiration Sensor Using Highly Oriented Carbon Nanotube Film
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 15-03-2021
Ultrasensitive Self-Powered Position-Sensitive Detector Based on n-3C-SiC/p-Si Heterojunctions
Publisher: American Chemical Society (ACS)
Date: 09-02-2022
Enhanced Electrohydrodynamics for Electrospinning a Highly Sensitive Flexible Fiber-Based Piezoelectric Sensor
Publisher: American Chemical Society (ACS)
Date: 07-03-2022
In-Situ Depostion of Pressure and Temperature Sensitive E-Skin for Robotic Applications
Publisher: IEEE
Date: 20-06-2021
Design and fabrication of paper-based stretchable sensor for respiration monitoring
Publisher: IEEE
Date: 31-10-2021
Thermal-piezoresistive pumping on double SiC layer resonator for effective quality factor tuning
Publisher: Elsevier BV
Date: 08-2022
Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure
Publisher: Elsevier BV
Date: 10-2018
Paper-Based Electronics Using Graphite and Silver Nanoparticles for Respiration Monitoring
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 15-12-2019
Impact of Design and Process on Performance of SiC Thermal Devices
Publisher: Springer Singapore
Date: 2018
A Generalized Analytical Model for Joule Heating of Segmented Wires
Publisher: ASME International
Date: 30-03-2018
DOI: 10.1115/1.4038829
Abstract: This paper presents an analytical solution for the Joule heating problem of a segmented wire made of two materials with different properties and suspended as a bridge across two fixed ends. The paper first establishes the one-dimensional (1D) governing equations of the steady-state temperature distribution along the wire with the consideration of heat conduction and free-heat convection phenomena. The temperature coefficient of resistance of the constructing materials and the dimension of the each segmented wires were also taken into account to obtain analytical solution of the temperature. COMSOL numerical solutions were also obtained for initial validation. Experimental studies were carried out using copper and nichrome wires, where the temperature distribution was monitored using an IR thermal camera. The data showed a good agreement between experimental data and the analytical data, validating our model for the design and development of thermal sensors based on multisegmented structures.
Future Prospects of SiC Thermoelectrical Sensing Devices
Publisher: Springer Singapore
Date: 2018
Low-cost multifunctional ionic liquid pressure and temperature sensor
Publisher: Springer International Publishing
Date: 12-2019
Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure
Publisher: American Chemical Society (ACS)
Date: 06-05-2022
Abstract: Utilizing harvesting energy to power sensors has been becoming more critical in the current age of the Internet of Things. In this paper, we propose a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy to power itself and simultaneously sense the surrounding temperature. The 3C-SiC/Si heterostructure converts photon energy into electrical energy, which is manifested as a lateral photovoltage across the top material layer of the heterostructure. Simultaneously, the lateral photovoltage varies with the surrounding temperature, and this photovoltage variation with temperature is used to monitor the temperature. We characterized the thermoresistive properties of the 3C-SiC/Si heterostructure, evaluated its energy conversion, and investigated its performance as a light-harvesting self-powered temperature sensor. The resistance of the heterostructure gradually drops with increasing temperature with a temperature coefficient of resistance (TCR) ranging from more than -3500 to approximately -8200 ppm/K. The generated lateral photovoltage is as high as 58.8 mV under 12 700 lx light illumination at 25 °C. The sensitivity of the sensor in the self-power mode is as high as 360 μV·K
Low-Cost Graphite on Paper Pressure Sensor for a Robot Gripper with a Trivial Fabrication Process
Publisher: MDPI AG
Date: 10-2018
DOI: 10.3390/S18103300
Abstract: A flexible pressure sensor with a rudimentary, ultra-low cost, and solvent-free fabrication process is presented in this paper. The sensor has a graphite-on-paper stacked paper structure, which deforms and restores its shape when pressure is applied and released, showing an exceptionally fast response and relaxation time of ≈0.4 ms with a sensitivity of −5%/Pa. Repeatability of the sensor over 1000 cycles indicates an excellent long-term stability. The sensor demonstrated fast and reliable human touch interface, and successfully integrated into a robot gripper to detect grasping forces, showing high promise for use in robotics, human interface, and touch devices.
Sensitive and fast response graphite pressure sensor fabricated by a solvent-free approach
Publisher: IEEE
Date: 10-2017
Ultraviolet and visible photodetection using 3C-SiC/Si hetero-epitaxial junction
Publisher: Springer International Publishing
Date: 12-2019
Carbon nanotube four-terminal devices for pressure sensing applications
Publisher: Springer International Publishing
Date: 12-2019
Wide bandgap semiconductor nanomembranes as a long-term biointerface for flexible, implanted neuromodulator
Publisher: Proceedings of the National Academy of Sciences
Date: 08-08-2022
Abstract: Electrical neuron stimulation holds promise for treating chronic neurological disorders, including spinal cord injury, epilepsy, and Parkinson’s disease. The implementation of ultrathin, flexible electrodes that can offer noninvasive attachment to soft neural tissues is a breakthrough for timely, continuous, programable, and spatial stimulations. With strict flexibility requirements in neural implanted stimulations, the use of conventional thick and bulky packages is no longer applicable, posing major technical issues such as short device lifetime and long-term stability. We introduce herein a concept of long-lived flexible neural electrodes using silicon carbide (SiC) nanomembranes as a faradic interface and thermal oxide thin films as an electrical barrier layer. The SiC nanomembranes were developed using a chemical vapor deposition (CVD) process at the wafer level, and thermal oxide was grown using a high-quality wet oxidation technique. The proposed material developments are highly scalable and compatible with MEMS technologies, facilitating the mass production of long-lived implanted bioelectrodes. Our experimental results showed excellent stability of the SiC/silicon dioxide (SiO 2 ) bioelectronic system that can potentially last for several decades with well-maintained electronic properties in biofluid environments. We demonstrated the capability of the proposed material system for peripheral nerve stimulation in an animal model, showing muscle contraction responses comparable to those of a standard non-implanted nerve stimulation device. The design concept, scalable fabrication approach, and multimodal functionalities of SiC/SiO 2 flexible electronics offer an exciting possibility for fundamental neuroscience studies, as well as for neural stimulation–based therapies.
A new structure of Tesla coupled nozzle in synthetic jet micro-pump
Publisher: Elsevier BV
Date: 11-2020
Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2018
Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8RA05797D
Abstract: The piezoresistance in crystalline 3C-SiC epitaxially grown on Si was investigated at low temperatures down to 150 K. The large gauge factor in 3C-SiC indicates its feasibility for sensing applications in cryogenic environments.
Flexible and Wearable Flow Sensor Using Spinnable Carbon Nanotube Nanofilm for Respiration Monitoring
Publisher: IEEE
Date: 2020
3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect
Publisher: American Chemical Society (ACS)
Date: 03-10-2019
Abstract: Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependence on spot positions, and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm
Integrated, Transparent Silicon Carbide Electronics and Sensors for Radio Frequency Biomedical Therapy
Publisher: American Chemical Society (ACS)
Date: 11-07-2022
Picomolar detection of carbohydrate-lectin interactions on piezoelectrically printed microcantilever array
Publisher: Elsevier BV
Date: 06-2022
Stretchable respiration sensors: Advanced designs and multifunctional platforms for wearable physiological monitoring
Publisher: Elsevier BV
Date: 10-2020
High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8TC03094D
Abstract: 4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.
Highly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect
Publisher: Elsevier BV
Date: 09-2020
Isotropic piezoresistance of p-type 4H-SiC in (0001) plane
Publisher: AIP Publishing
Date: 02-07-2018
DOI: 10.1063/1.5037545
Abstract: In this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by means of the hole energy shift calculation and the coordinate transformation. These results were also confirmed by the measurement of the piezoresistance using a bending beam method. The fundamental longitudinal and transverse piezoresistive coefficients π11 and π12 were found to be 6.43 × 10−11 Pa−1 and −5.12 × 10−11 Pa−1, respectively. The isotropy of the piezoresistance in the basal plane of p-type 4H-SiC is attributed to the isotropic hole energy shift under uniaxial strain. This interesting phenomenon in p-type 4H-SiC is promising for the design and fabrication of mechanical sensors and strain-engineered electronics since high sensitivity and consistent performance can be achieved regardless of the crystallographic orientation.
Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures
Publisher: IEEE
Date: 06-2019
Physical Sensors: Thermal Sensors
Publisher: Elsevier
Date: 2021
Electrospray propelled by ionic wind in a bipolar system for direct delivery of charge reduced nanoparticles
Publisher: IOP Publishing
Date: 15-04-2021
DOI: 10.35848/1882-0786/ABF36B
Abstract: We present a conceptual design to generate and deliver nanoparticles in one unique system based on electrohydrodynamic atomisation (EHDA) without the restriction of the collector. The present EHDA bipolar configuration consists of a capillary nozzle and a pin, both act as emitters and as the reference electrodes of each other. Under an applied voltage, the capillary nozzle sprays droplets while the pin generates ion wind via corona discharge. During spraying process, droplets’ charge is significantly reduced by interacting with counter ions and propelled away from the electrodes by the momentum of ion winds accumulated from corona discharge. Thus, the present technique can yield promising applications in effective respiratory delivery of nanomedicine.
Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure
Publisher: Elsevier BV
Date: 12-2022
A hot-film air flow sensor for elevated temperatures
Publisher: AIP Publishing
Date: 2019
DOI: 10.1063/1.5065420
Abstract: We report a novel packaging and experimental technique for characterizing thermal flow sensors at high temperatures. This paper first reports the fabrication of 3C-SiC (silicon carbide) on a glass substrate via anodic bonding, followed by the investigation of thermoresistive and Joule heating effects in the 3C-SiC nano-thin film heater. The high thermal coefficient of resistance of approximately −20 720 ppm/K at ambient temperature and −9287 ppm/K at 200 °C suggests the potential use of silicon carbide for thermal sensing applications in harsh environments. During the Joule heating test, a high-temperature epoxy and a brass metal sheet were utilized to establish the electric conduction between the metal electrodes and SiC heater inside a temperature oven. In addition, the metal wires from the sensor to the external circuitry were protected by a fiberglass insulating sheath to avoid short circuit. The Joule heating test ensured the stability of mechanical and Ohmic contacts at elevated temperatures. Using a hot-wire anemometer as a reference flow sensor, calibration tests were performed at 25 °C, 35 °C, and 45 °C. Then, the SiC hot-film sensor was characterized for a range of low air flow velocity, indicating a sensitivity of 5 mm−1 s. The air flow was established by driving a metal propeller connected to a DC motor and controlled by a microcontroller. The materials, metallization, and interconnects used in our flow sensor were robust and survived temperatures of around 200 °C.
A large pseudo-Hall effect in n-type 3C-SiC(100) and its dependence on crystallographic orientation for stress sensing applications
Publisher: Elsevier BV
Date: 02-2018
Novel Low-Cost Sensor for Human Bite Force Measurement
Publisher: MDPI AG
Date: 06-08-2016
DOI: 10.3390/S16081244
Robust Free-Standing Nano-Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications
Publisher: Wiley
Date: 15-12-2018
High temperature silicon-carbide-based flexible electronics for monitoring hazardous environments
Publisher: Elsevier BV
Date: 07-2020
Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors
Publisher: Springer Singapore
Date: 2018
Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications
Publisher: American Chemical Society (ACS)
Date: 15-08-2017
Abstract: Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass s les show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12 000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.
Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D1MH00538C
Abstract: This paper comprehensively reviews methods and approaches to enhance the piezoresistive effect, ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to soft electronic applications.
Optical and electrical characterizations of nanoscale robust 3c-SiC membrane for UV sensing applications
Publisher: Trans Tech Publications, Ltd.
Date: 08-2018
DOI: 10.4028/WWW.SCIENTIFIC.NET/KEM.775.278
Abstract: This paper presents the fabrication and optical characterization of an ultrathin 3C-SiC membrane for UV light detection. SiC nanoscale film was grown on Si substrate and subsequently released to form a robust membrane with a high aspect ratio of about 5000. Transmission measurements were performed to determine the thickness of the film with a high accuracy of 98%. We also employed a simple and highly effective direct wirebonding technique to form electrical contacts to the SiC membrane. The considerable change in the photocurrent of the SiC membrane was observed under UV illumination, indicating the potential of using 3C-SiC membranes for UV detection.
A Versatile Sacrificial Layer for Transfer Printing of Wide Bandgap Materials for Implantable and Stretchable Bioelectronics
Publisher: Wiley
Date: 04-09-2020
Pressure and temperature sensitive e-skin for in situ robotic applications
Publisher: Elsevier BV
Date: 10-2021
Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement
Publisher: Wiley
Date: 22-07-2018
Free Standing Stress Amplification Structure for Ultrasensitive 3C-SiC/Si Pressure Sensor
Publisher: IEEE
Date: 30-10-2022
Unintentionally Doped Epitaxial 3C-SiC(111) Nanothin Film as Material for Highly Sensitive Thermal Sensors at High Temperatures
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2018
Highly sensitive p-type 4H-SiC van der Pauw sensor
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C7RA11922D
Abstract: This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.
Ultra-sensitive self-powered position-sensitive detector based on horizontally-aligned double 3C-SiC/Si heterostructures
Publisher: Elsevier BV
Date: 2021
Self-powered monolithic accelerometer using a photonic gate
Publisher: Elsevier BV
Date: 10-2020
Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications
Publisher: American Chemical Society (ACS)
Date: 20-11-2017
Abstract: Micromachined membranes are promising platforms for cell culture thanks to their miniaturization and integration capabilities. Possessing chemical inertness, biocompatibility, and integration, silicon carbide (SiC) membranes have attracted great interest toward biological applications. In this paper, we present the batch fabrication, mechanical characterizations, and cell culture demonstration of robust ultrathin epitaxial deposited SiC membranes. The as-fabricated ultrathin SiC membranes, with an ultrahigh aspect ratio (length/thickness) of up to 20 000, possess high a fracture strength up to 2.95 GPa and deformation up to 50 μm. A high optical transmittance of above 80% at visible wavelengths was obtained for 50 nm membranes. The as-fabricated membranes were experimentally demonstrated as an excellent substrate platform for bio-MEMS/NEMS cell culture with the cell viability rate of more than 92% after 72 h. The ultrathin SiC membrane is promising for in vitro observations/imaging of bio-objects with an extremely short optical access.
Stretchable, Skin-Breathable, and Ultrasensitive Respiration Sensor Using Graphite on Paper With Smart Structures
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2022
Thermo-phototronic Effect for Self-Powered Photodetector using n-3C-SiC/p-Si Heterostructure
Publisher: IEEE
Date: 30-10-2022
Long-Lived, Transferred Crystalline Silicon Carbide Nanomembranes for Implantable Flexible Electronics
Publisher: American Chemical Society (ACS)
Date: 21-08-2019
Abstract: Implantable electronics are of great interest owing to their capability for real-time and continuous recording of cellular-electrical activity. Nevertheless, as such systems involve direct interfaces with surrounding biofluidic environments, maintaining their long-term sustainable operation, without leakage currents or corrosion, is a daunting challenge. Herein, we present a thin, flexible semiconducting material system that offers attractive attributes in this context. The material consists of crystalline cubic silicon carbide nanomembranes grown on silicon wafers, released and then physically transferred to a final device substrate (
A versatile PDMS submicrobead/graphene oxide nanocomposite ink for the direct ink writing of wearable micron-scale tactile sensors
Publisher: Elsevier BV
Date: 09-2019
Advances in Rational Design and Materials of High‐Performance Stretchable Electromechanical Sensors
Publisher: Wiley
Date: 26-02-2020
Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2017
Wireless Battery-Free SiC Sensors Operating in Harsh Environments Using Resonant Inductive Coupling
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2019
Engineering Stress in Thin Films: An Innovative Pathway Toward 3D Micro and Nanosystems
Publisher: Wiley
Date: 07-12-2021
Abstract: Transformation of conventional 2D platforms into unusual 3D configurations provides exciting opportunities for sensors, electronics, optical devices, and biological systems. Engineering material properties or controlling and modulating stresses in thin films to pop‐up 3D structures out of standard planar surfaces has been a highly active research topic over the last decade. Implementation of 3D micro and nanoarchitectures enables unprecedented functionalities including multiplexed, monolithic mechanical sensors, vertical integration of electronics components, and recording of neuron activities in 3D organoids. This paper provides an overview on stress engineering approaches to developing 3D functional microsystems. The paper systematically presents the origin of stresses generated in thin films and methods to transform a 2D design into an out‐of‐plane configuration. Different types of 3D micro and nanostructures, along with their applications in several areas are discussed. The paper concludes with current technical challenges and potential approaches and applications of this fast‐growing research direction.
Highly sensitive 3C-SiC on glass based thermal flow sensor realized using MEMS technology
Publisher: Elsevier BV
Date: 08-2018
AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2021
Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain
Publisher: Elsevier BV
Date: 06-2019
Thermoresistive Effect for Advanced Thermal Sensors: Fundamentals, Design Considerations, and Applications
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2017
Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes
Publisher: American Chemical Society (ACS)
Date: 08-07-2021
Thermoresistance of p-Type 4H–SiC Integrated MEMS Devices for High-Temperature Sensing
Publisher: Wiley
Date: 02-01-2019
Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation
Publisher: Wiley
Date: 06-02-2020
Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction
Publisher: American Chemical Society (ACS)
Date: 08-06-2022
Ultrasensitive strain sensor enhanced by Bonded Light Emitting Diodes
Publisher: IEEE
Date: 31-10-2021
Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure
Publisher: American Chemical Society (ACS)
Date: 07-11-2017
Abstract: This letter reports a giant opto-piezoresistive effect in p-3C-SiC -Si heterostructure under visible-light illumination. The p-3C-SiC -Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm
Flexible and multifunctional electronics fabricated by a solvent-free and user-friendly method
Publisher: Royal Society of Chemistry (RSC)
Date: 2016
DOI: 10.1039/C6RA14646E
Abstract: Pencil-drawn flexible and multifunctional electronic devices have been proven to show potential for various applications including mass and flow sensors, human-motion detection and wearable thermal therapy.
Effects of photogenerated-hole diffusion on 3C-SiC/Si heterostructure optoelectronic position-sensitive detector
Publisher: IOP Publishing
Date: 16-04-2021
Abstract: Single-crystalline silicon carbide (3C-SiC) has been attracting significant attention in recent years due to its cost-effectiveness and high crystalline quality, mature fabrication techniques on Si-substrate and outstanding mechanical, chemical, and optoelectronic characteristics. Taking advantage of its large built-in potential, a promising application of 3C-SiC on Si (3C-SiC/Si) heterostructure is to develop position-sensitive detectors (PSDs) based on the lateral photovoltaic effect. The lateral photovoltage is generated under non-uniform illumination due to the asymmetry diffusion of photo-induced charge carriers. However, the full potential of 3C-SiC/Si heterojunction-based PSDs has not been elucidated yet. In this study, we investigate the influence of photogenerated hole and its diffusion path length on the sensing performance of the devices in attempts to obtain an optimal design and further pushing the limit of the PSD. Devices with different electrode spacings are fabricated on the 3C-SiC/Si heterostructure, and experiments are conducted under different illumination conditions to determine the position-sensitivity. Devices with short electrode spacings are found to have excellent position-sensitivity with the highest sensitivity of 470 mV mm −1 obtained in a device spacing of 300 µ m under 980 nm (1000 µ W) laser illumination. The physic mechanism underneath the experimentally observed behaviors are explained based on the generation and separation of electron–hole (e–h) pairs under the illumination, and charge carrier diffusion theory. The findings of this work will provide insights to design highly sensitive PSDs and explore its full potentials.
An On-Chip SiC MEMS Device with Integrated Heating, Sensing, and Microfluidic Cooling Systems
Publisher: Wiley
Date: 12-08-2018
Light harvesting self-powered strain sensor using 3C-SiC/Si heterostructure
Publisher: IEEE
Date: 30-10-2022
Ultra-thin LPCVD silicon carbide membrane: A promising platform for bio-cell culturing
Publisher: IEEE
Date: 2018
Electrically Stable Carbon Nanotube Yarn Under Tensile Strain
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2017
Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics
Publisher: American Association for the Advancement of Science (AAAS)
Date: 29-05-2020
Abstract: Optothermotronics enable a giant temperature coefficient of resistance using optoelectronic modulation of electric potential.
Toward on-board microchip synthesis of CdSe: Vs. PbSe nanocrystalline quantum dots as a spectral decoy for protecting space assets
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D0RE00327A
Abstract: Fabrication of the reaction chamber using silicon carbide. (A) A schematic sketch of the fabrication flow (B) a photograph of a transparent 6 inch SiC-on-glass wafer (C) the surface morphology of the SiC film.
Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring
Publisher: Wiley
Date: 24-09-2020
A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8RA00734A
Abstract: This paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C–SiC) MEMS devices.
Steady-state analytical model of suspended p-type 3C-SiC bridges under consideration of Joule heating
Publisher: IOP Publishing
Date: 05-06-2017
Wide-Band-Gap Semiconductors for Biointegrated Electronics: Recent Advances and Future Directions
Publisher: American Chemical Society (ACS)
Date: 19-04-2021
Polyacrylonitrile-carbon Nanotube-polyacrylonitrile: A Versatile Robust Platform for Flexible Multifunctional Electronic Devices in Medical Applications
Publisher: Wiley
Date: 19-03-2019
Fundamentals of Thermoelectrical Effect in SiC
Publisher: Springer Singapore
Date: 2018
In-air particle generation by on-chip electrohydrodynamics
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D0LC01247E
Abstract: This work demonstrates the capability of simultaneously generating-and-delivering a stream of micro/nanoparticles range of 0.75–2 μm by electrohydrodynamics, without any restrictions of either the collector or the assistance of external flow.
Desirable Features for High-Temperature SiC Sensors
Publisher: Springer Singapore
Date: 2018
Fabrication of a sensitive pressure sensor using carbon nanotube micro-yarns
Publisher: IEEE
Date: 10-2017
Fabrication of SiC MEMS Sensors
Publisher: Springer Singapore
Date: 2018
Electrohydrodynamic Nebuliser (eNEB) for Direct Pulmonary Drug Delivery Application
Publisher: IEEE
Date: 15-01-2023
Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor
Publisher: IEEE
Date: 2018
The concept of light-harvesting, self-powered mechanical sensors using a monolithic structure
Publisher: Elsevier BV
Date: 06-2022
Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures
Publisher: Elsevier BV
Date: 10-2018
Transparent crystalline cubic SiC-on-glass electrodes enable simultaneous electrochemistry and optical microscopy
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9CC03082D
Abstract: This work introduces transparent SiC-on-glass as a new platform for biosensing applications which enables cell culturing, stimulating, microscopy-imaging and bioelectrochemical detection.
Opto-electronic coupling in semiconductors: towards ultrasensitive pressure sensing
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0TC00229A
Abstract: A novel concept of opto-electronic coupling in semiconductor heterojunctions for pressure sensing is proposed. By using non-uniform illumination of visible light coupling with tuning current, performance of the pressure sensor is enormously enhanced.
Micro cam system driven by electrostatic comb-drive actuators based on SOI-MEMS technology
Publisher: Springer Science and Business Media LLC
Date: 29-01-2014
ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
Publisher: AIP Publishing
Date: 30-03-2020
DOI: 10.1063/5.0004943
Abstract: This paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band rejection as high as 18 dB are demonstrated using the excellent piezoelectric properties of ScAlN and low acoustic loss of 3C-SiC. Additionally, a large piezoresistive effect in the low-doped n-type 3C-SiC(100) thin film has been observed, which exceeds the previously reported values in any SiC thin films. The growth of the n-type 3C-SiC thin film was performed using the low pressure chemical vapor deposition technique at 1250 °C and the standard micro-electro-mechanical systems process is used for the fabrication of 3C-SiC piezoresistors. The piezoresistive effect was measured using the bending beam method in different crystallographic orientations. The maximum gauge factor is –47 for the longitudinal [100] orientation. Using the longitudinal and transverse gauge factors for different crystallographic orientations, the fundamental piezoresistive coefficients of the low-doped n-type 3C-SiC thin film are measured to be π11=(−14.5±1.3)×10−11 Pa−1, π12=(5.5±0.5)×10−11 Pa−1, and π44=(−1.7±0.7)×10−11 Pa−1.
Optoelectronic Enhancement for Piezoresistive Pressure Sensor
Publisher: IEEE
Date: 2020
Electrical Resistance of Carbon Nanotube Yarns under Compressive Transverse Pressure
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2018
Giant piezoresistive effect by optoelectronic coupling in a heterojunction
Publisher: Springer Science and Business Media LLC
Date: 12-09-2019
DOI: 10.1038/S41467-019-11965-5
Abstract: Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.
Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2019
Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures
Publisher: Elsevier BV
Date: 2021
Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration
Publisher: American Chemical Society (ACS)
Date: 09-11-2021
Degraded boiling heat transfer from hotwire in ferrofluid due to particle deposition
Publisher: Elsevier BV
Date: 09-2018
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