ORCID Profile
0000-0001-6313-5189
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Publisher: American Chemical Society (ACS)
Date: 28-02-2022
DOI: 10.1021/ACS.NANOLETT.1C04522
Abstract: Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm
Publisher: American Chemical Society (ACS)
Date: 07-09-2018
Abstract: The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, Φ
Publisher: AIP Publishing
Date: 21-07-2014
DOI: 10.1063/1.4891573
Abstract: Plasmonic dipolar antibonding modes of gold nanoantennas are observed in evanescent waves. Comparing with the bonding mode for normal incidence, the use of prism coupling to transfer the energy of incident light to plasmonic resonance in nanoantennas not only has a higher extinction coefficient but also achieves higher sensitivity to the surrounding environment. The sensitivity of the antibonding mode of gold nanoantenna is 4.84 times that of the bonding mode in terms of the figure of merit.
Publisher: IOP Publishing
Date: 25-01-2021
Abstract: The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (ln T ) dependence of the Hall slope R H = δR xy / δB = δρ xy / δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a ln T dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2015
Publisher: Springer Science and Business Media LLC
Date: 13-12-2019
DOI: 10.1038/S41699-019-0133-3
Abstract: In two-dimensional (2D)-semiconductor-based field-effect transistors and optoelectronic devices, metal–semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal–2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin-surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide–2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm 2 /Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized-monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.
Publisher: American Chemical Society (ACS)
Date: 09-11-2022
Publisher: The Optical Society
Date: 20-01-2016
DOI: 10.1364/OME.6.000540
Location: Australia
No related grants have been discovered for 奕勳 陳.