ORCID Profile
0000-0002-4555-2146
Current Organisation
Hosei University
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Publisher: IOP Publishing
Date: 25-04-2019
Publisher: American Physical Society (APS)
Date: 27-10-2009
Publisher: Springer Science and Business Media LLC
Date: 08-12-2022
DOI: 10.1038/S41598-022-25522-6
Abstract: Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3 P 0 - 3 F 2 transition in the 4 f -shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be ided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.
Publisher: Optica Publishing Group
Date: 18-09-2020
DOI: 10.1364/OME.401765
Abstract: Wide bandgap semiconductors are increasingly important for bioimaging applications, as they can possess good biocompatibility and host a large range of fluorescent defects spanning the visible to infrared. Gallium nitride is one promising host for photostable fluorophores. In particular, neodymium (Nd)-doped gallium nitride (GaN) shows bright near-infrared fluorescence and narrow room temperature linewidth and is therefore a candidate material for fluorescent probes for bioimaging. To explore the conditions necessary to generate biomarkers based on Nd:GaN, this paper reports the room temperature photoluminescence (PL) properties of small ensembles of Nd ions implanted into the nanoscale regions of GaN epilayers. The minimum volume of Nd-implanted GaN that can be optically detected in this study is about 8×10 4 nm 3 and the minimum detected ensemble of Nd ions is about 4×10 3 , although not all of implanted Nd ions activate as luminescence centers. We show from the PL excitation spectra that the strongest resonant excitation appears at 619 nm, attributed to the 4 I 9/2 → 4 G 5/2 ( 4 G 7/2 ) transition in the 4 f -shell. We measure the luminescence lifetime to be several tens of microseconds. We also identify the presence of a different excitation mechanism from the resonant excitation when excited below 510 nm (above 2.43 eV).
Location: No location found
Location: No location found
Location: Japan
Location: Japan
No related grants have been discovered for Tomoaki Nishimura.