ORCID Profile
0000-0002-8469-5983
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Publisher: MDPI AG
Date: 07-04-2018
DOI: 10.3390/NANO8040223
Abstract: GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of Ar (0.5 mTorr), we observed an increase in the nanorod aspect ratio from 8 to ~35, a decrease in the average diameter from 74 to 35 nm, and a two-fold increase in nanorod density. With further dilution (Ar = 2.5 mTorr), the aspect ratio decreased to 14, while the diameter increased to 60 nm and the nanorod density increased to a maximum of 2.4 × 109 cm−2. Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films. The observed morphological dependence on N2 partial pressure is explained by a change from N-rich to Ga-rich growth conditions, combined with reduced GaN-poisoning of the Ga-target as the N2 gas pressure is reduced. Nanorods grown at 2.5 mTorr N2 partial pressure exhibited a high intensity 4 K photoluminescence neutral donor bound exciton transitions (D0XA) peak at ~3.479 eV with a full-width-at-half-maximum of 1.7 meV. High-resolution transmission electron microscopy corroborated the excellent crystalline quality of the nanorods.
Publisher: Springer Science and Business Media LLC
Date: 28-12-2015
DOI: 10.1557/JMR.2015.384
Publisher: MDPI AG
Date: 02-09-2017
DOI: 10.3390/EN10091322
Abstract: We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB2/Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.
Publisher: Springer Science and Business Media LLC
Date: 11-2007
Abstract: We report the layer structure and composition in recently discovered TiN/SiN(001) superlattices deposited by dual-reactive magnetron sputtering on MgO(001) substrates. High-resolution transmission electron microscopy combined with Z -contrast scanning transmission electron microscopy, x-ray reflection, diffraction, and reciprocal-space mapping shows the formation of high-quality superlattices with coherently strained cubic TiN and SiN layers for SiN thickness below 7–10 Å. For increasing SiN layer thicknesses, a transformation from epitaxial to amorphous SiN x ( x ⩾ 1) occurs during growth. Elastic recoil detection analysis revealed an increase in nitrogen and argon content in SiN x layers during the phase transformation. The oxygen, carbon, and hydrogen contents in the multilayers were around the detection limit (∼0.1 at.%) with no indication of segregation to the layer interfaces. Nanoindentation experiments confirmed superlattice hardening in the films. The highest hardness of 40.4 ± 0.8 GPa was obtained for 20-Å TiN with 5-Å-thick SiN(001) interlayers, compared to monolithic TiN at 20.2 ± 0.9 GPa.
Publisher: Springer Science and Business Media LLC
Date: 05-11-2018
DOI: 10.1038/S41598-018-34279-W
Abstract: Nanostructure formation via surface-diffusion-mediated segregation of ZrN and AlN in Zr 1−x Al x N films during high mobility growth conditions is investigated for 0 ≤ × ≤ 1. The large immiscibility combined with interfacial surface and strain energy balance resulted in a hard nanolabyrinthine lamellar structure with well-defined (semi) coherent c-ZrN and w-AlN domains of sub-nm to ~4 nm in 0.2 ≤ × ≤ 0.4 films, as controlled by atom mobility. For high AlN contents (x 0.49) Al-rich ZrN domains attain wurtzite structure within fine equiaxed nanocomposite wurtzite lattice. Slow diffusion in wurtzite films points towards crystal structure dependent driving force for decomposition. The findings of unlikelihood of iso-structural decomposition in c-Zr 1−x Al x N, and stability of w-Zr 1−x Al x N (in large × films) is complemented with first principles calculations.
Publisher: IOP Publishing
Date: 11-12-2020
Abstract: The boron-10 based multi-grid detector is being developed as an alternative to helium-3 based neutron detectors. At the European Spallation Source, the detector will be used for time-of-flight neutron spectroscopy at cold to thermal neutron energies. The objective of this work is to investigate fine time- and energy-resolved effects of the Multi-Grid detector, down to a few µeV, while comparing it to the performance of a typical helium-3 tube. Furthermore, it is to characterize differences between the detector technologies in terms of internal scattering, as well as the time reconstruction of ∼ µs short neutron pulses. The data were taken at the Helmholtz Zentrum Berlin, where the Multi-Grid detector and a helium-3 tube were installed at the ESS test beamline, V20. Using a Fermi-chopper, the neutron beam of the reactor was chopped into a few tens of µs wide pulses before reaching the detector, located a few tens of cm downstream. The data of the measurements show an agreement between the derived and calculated neutron detection efficiency curve. The data also provide fine details on the effect of internal scattering, and how it can be reduced. For the first time, the chopper resolution was comparable to the timing resolution of the Multi-Grid detector. This allowed a detailed study of time- and energy resolved effects, as well as a comparison with a typical helium-3 tube.
No related grants have been discovered for Jens Birch.