ORCID Profile
0000-0002-0504-2934
Current Organisation
Chinese Academy of Sciences
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Publisher: IOP Publishing
Date: 02-02-2017
Publisher: Wiley
Date: 22-09-2017
Abstract: The integration of graphene with colloidal quantum dots (QDs) that have tunable light absorption affords new opportunities for optoelectronic applications as such a hybrid system solves the problem of both quantity and mobility of photocarriers. In this work, a hybrid system comprising of monolayer graphene and self-doped colloidal copper phosphide (Cu
Publisher: The Optical Society
Date: 10-05-2019
DOI: 10.1364/PRJ.3.000110
Publisher: American Chemical Society (ACS)
Date: 23-01-2015
DOI: 10.1021/NN506920Z
Abstract: Recently, research on graphene based photodetectors has drawn substantial attention due to ultrafast and broadband photoresponse of graphene. However, they usually have low responsivity and low photoconductive gain induced by the gapless nature of graphene, which greatly limit their applications. The synergetic integration of graphene with other two-dimensional (2D) materials to form van der Waals heterostructure is a very promising approach to overcome these shortcomings. Here we report the growth of graphene-Bi2Te3 heterostructure where Bi2Te3 is a small bandgap material from topological insulator family with a similar hexagonal symmetry to graphene. Because of the effective photocarrier generation and transfer at the interface between graphene and Bi2Te3, the device photocurrent can be effectively enhanced without sacrificing the detecting spectral width. Our results show that the graphene-Bi2Te3 photodetector has much higher photoresponsivity (35 AW(-1) at a wavelength of 532 nm) and higher sensitivity (photoconductive gain up to 83), as compared to the pure monolayer graphene-based devices. More interestingly, the detection wavelength range of our device is further expanded to near-infrared (980 nm) and telecommunication band (1550 nm), which is not observed on the devices based on heterostructures of graphene and transition metal dichalcogenides.
Publisher: Wiley
Date: 24-03-2017
Publisher: Wiley
Date: 24-04-2015
Publisher: Elsevier BV
Date: 12-2016
Publisher: Wiley
Date: 11-04-2017
Abstract: 2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly h ered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe
Publisher: Royal Society of Chemistry (RSC)
Date: 2015
DOI: 10.1039/C5NR05084G
Abstract: A simple method to fabricate thermo-optic modulators with high performance in a small footprint.
Publisher: American Chemical Society (ACS)
Date: 29-03-2017
Abstract: Even though the nonlinear optical effects of solution processed organic-inorganic perovskite films have been studied, the nonlinear optical properties in two-dimensional (2D) perovskites, especially their applications for ultrafast photonics, are largely unexplored. In comparison to bulk perovskite films, 2D perovskite nanosheets with small thicknesses of a few unit cells are more suitable for investigating the intrinsic nonlinear optical properties because bulk recombination of photocarriers and the nonlinear scattering are relatively small. In this research, we systematically investigated the nonlinear optical properties of 2D perovskite nanosheets derived from a combined solution process and vapor phase conversion method. It was found that 2D perovskite nanosheets have stronger saturable absorption properties with large modulation depth and very low saturation intensity compared with those of bulk perovskite films. Using an all dry transfer method, we constructed a new type of saturable absorber device based on single piece 2D perovskite nanosheet. Stable soliton state mode-locking was achieved, and ultrafast picosecond pulses were generated at 1064 nm. This work is likely to pave the way for ultrafast photonic and optoelectronic applications based on 2D perovskites.
Publisher: Wiley
Date: 02-02-2015
Publisher: MDPI AG
Date: 05-08-2015
DOI: 10.3390/MA8085007
Publisher: IOP Publishing
Date: 25-10-2016
DOI: 10.1088/0957-4484/27/46/462001
Abstract: Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.
Publisher: Wiley
Date: 16-03-2016
Publisher: American Chemical Society (ACS)
Date: 02-11-2018
Publisher: American Chemical Society (ACS)
Date: 05-10-2017
Abstract: The presence of a direct band gap and high carrier mobility in few-layer black phosphorus (BP) offers opportunities for using this material for infrared (IR) light detection. However, the poor air stability of BP and its large contact resistance with metals pose significant challenges to the fabrication of highly efficient IR photodetectors with long lifetimes. In this work, we demonstrate a graphene-BP heterostructure photodetector with ultrahigh responsivity and long-term stability at IR wavelengths. In our device architecture, the top layer of graphene functions not only as an encapsulation layer but also as a highly efficient transport layer. Under illumination, photoexcited electron-hole pairs generated in BP are separated and injected into graphene, significantly reducing the Schottky barrier between BP and the metal electrodes and leading to efficient photocurrent extraction. The graphene-BP heterostructure phototransistor exhibits a long-term photoresponse at near-infrared wavelength (1550 nm) with an ultrahigh photoresponsivity (up to 3.3 × 10
Publisher: Wiley
Date: 11-08-2017
Publisher: Wiley
Date: 07-02-2017
Publisher: American Chemical Society (ACS)
Date: 14-12-2016
Abstract: Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly h ered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A·W(-1) at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.
Publisher: Wiley
Date: 17-11-2016
Publisher: American Chemical Society (ACS)
Date: 28-09-2017
No related grants have been discovered for Shaojuan Li.