ORCID Profile
0000-0002-1725-0909
Current Organisation
Forschungszentrum Jülich
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Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2017
Publisher: IEEE
Date: 06-2014
Publisher: American Association for the Advancement of Science (AAAS)
Date: 31-05-2019
Abstract: Improving costs and scale reflect looming opportunities
Publisher: IOP Publishing
Date: 10-2012
Abstract: Modelling of solar cells today is general practice in research and widely-used in industry. Established modelling software is typically limited to one dimension and/or to small scales. Additionally, novel effects, like, e.g., the use of diffractive structures or luminescent materials, are not established. In this paper we discuss how the combination of different modelling techniques can be used to overcome these limitations. In this context two ex les are presented. The first ex le concerns the combination of the open source simulation software PC1D with circuit modelling to investigate the effect of local shunts on the global characteristics of a silicon wafer solar cell. For the investigated ex le (4.5 cm 2 cell area) we find that a local point shunt reduces the solar cell efficiency by 4% relative. The second ex le concerns the modelling of diffractive gratings for thin silicon wafer solar cells. For this purpose, we use the rigorous coupled wave analysis to simulate Sentaurus technical computer-aided design (TCAD) is combined with the rigorous coupled wave analysis, a method to solve Maxwell's equations for periodic structures. Here we show that a grating can be used to improve the absorption in a thin silicon wafer solar cell considerably.
Publisher: Elsevier BV
Date: 11-2020
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4EE01152J
Abstract: A comprehensive review on the recent progress of black silicon research and its applications in solar cell technologies.
Publisher: AIP Publishing
Date: 11-11-2014
DOI: 10.1063/1.4901242
Abstract: Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime s les. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured s les. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar s les. The established parameters are subsequently used to simulate the boron diffusion process on textured s les. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured s les is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured s les to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured s les. The differences between planar and textured s les are discussed.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2014
Publisher: Elsevier BV
Date: 2012
Publisher: Elsevier BV
Date: 2013
Publisher: Elsevier BV
Date: 2013
Publisher: Elsevier BV
Date: 2013
Publisher: AIP Publishing
Date: 09-2012
DOI: 10.1063/1.4749572
Abstract: A strong injection level dependence of the effective minority carrier lifetime (τeff) is typically measured at low injection levels for undiffused crystalline silicon (c-Si) wafers symmetrically passivated by a highly charged dielectric film. However, this phenomenon is not yet well understood. In this work, we concentrate on two of those possible physical mechanisms to reproduce measured τeff data of c-Si wafers symmetrically passivated by atomic layer deposited Al2O3. The first assumes the existence of a defective region close to the c-Si surface. The second assumes asymmetric electron and hole lifetimes in the bulk. Both explanations result in an adequate reproduction of the injection dependent τeff found for both n- and p-type c-Si wafers. However, modeling also predicts a distinctly different injection dependence of τeff for the two suggested mechanisms if the polarity of the effective surface charge is inverted. We test this prediction by experimentally inverting the polarity of the effective surface charge using corona charges. From the experiments and simulations, it is concluded that surface damage is the most likely cause of the significant reduction of τeff at low injection levels.
Publisher: Springer Science and Business Media LLC
Date: 29-05-2014
Location: Singapore
Location: United States of America
No related grants have been discovered for Ian Marius Peters.