ORCID Profile
0000-0003-1820-2316
Current Organisation
UNSW Sydney
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Publisher: Elsevier BV
Date: 04-2016
Publisher: AIP Publishing
Date: 2022
DOI: 10.1063/5.0090346
Publisher: IEEE
Date: 06-2017
Publisher: Springer Science and Business Media LLC
Date: 16-05-2016
DOI: 10.1557/ADV.2016.354
Publisher: Wiley
Date: 21-09-2022
Abstract: The global cumulative photovoltaic (PV) installed capacity is now over 1 TW. While this is an impressive amount of PV growth, it contributes less than 3% of total electricity generation and, therefore, requires significantly more PV to decarbonize the electricity sector completely. In order to achieve this decarbonization sustainably, all factors must be considered, including the extraction and purification of abundant materials. Based on conservative and ambitious future PV production scenarios and learning rate (LR) for material consumption reduction, the material demands for the future are projected. The concept of LR is applied to estimate the reduced material consumption based on the “maturity” of PV technology or the cumulative installed PV capacity. Herein, it is suggested that abundant materials like copper, concrete, and aluminum may face shortages if PV production follows the broad electrification scenario. Steel, in comparison, likely does not encounter any material shortages. Nevertheless, the work here demonstrates that the demand for even abundant materials should be minimized to decarbonize energy usage and mitigate climate change sustainably.
Publisher: IEEE
Date: 06-2013
Publisher: IEEE
Date: 06-2014
Publisher: IOP Publishing
Date: 08-03-2021
Abstract: In this work, the efficiency potential of the fully screen-printed passivated emitter and rear contact (PERC) solar cell structure is investigated via numerical simulations. A series of improvements and optimizations are performed on bulk quality, emitter properties and metallization of screen-printed PERC solar cells based on experimental results obtained in both industry and laboratory environments. With significantly improved bulk and surface passivation quality, we find that carrier recombination losses at the metal/silicon interface will impose a substantial limitation on efficiencies, highlighting the need for developing new screen-printing technologies to overcome the limitation from contact recombination. By improving the effectiveness of the back-surface field, reducing coverage area of laser-doped selective emitters and the front metal/silicon interface contact area, a 15 mV improvement in open-circuit voltage ( V OC ) was achieved in our modelled cells, due to greatly reduced contact recombination losses. With the further implementation of a multi-busbar and fine-line printing technologies, efficiency above 24% was obtained from simulations. Subsequently, a comprehensive pathway towards 24% efficiency for screen-printed PERC solar cells is proposed, without the need to implement passivated contacts or transition to a plated metallisation scheme. Key target requirements for future developments are also identified.
Publisher: Elsevier BV
Date: 2017
Publisher: IEEE
Date: 06-2016
Publisher: Elsevier BV
Date: 12-2016
Publisher: Elsevier BV
Date: 03-2016
Publisher: AIP Publishing
Date: 2023
DOI: 10.1063/5.0140906
Publisher: IEEE
Date: 06-2015
Publisher: International Solar Energy Society
Date: 2021
Publisher: Elsevier BV
Date: 11-2015
Publisher: IEEE
Date: 06-2017
Publisher: IEEE
Date: 06-2014
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D1EE01814K
Abstract: As the photovoltaic (PV) industry heading towards the multi-TW scale, PV technologies need to be carefully evaluated based on material consumption rather than just efficiency or cost to ensure sustainable growth of the industry.
Publisher: Elsevier BV
Date: 12-2019
Publisher: Elsevier BV
Date: 09-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
Publisher: Elsevier BV
Date: 12-2015
Publisher: Wiley
Date: 19-10-2023
DOI: 10.1002/PIP.3747
Publisher: Springer Science and Business Media LLC
Date: 15-03-2021
Publisher: IEEE
Date: 06-2016
Publisher: Springer Science and Business Media LLC
Date: 28-02-2019
Publisher: Wiley
Date: 21-02-2023
DOI: 10.1002/PIP.3687
Abstract: High‐efficiency silicon‐based tandem solar cells will likely drive the push towards terawatt (TW) scale PV manufacturing on the pathway to net zero emissions by 2050. In this work, we provide a comprehensive analysis of material consumption and sustainability issues for future tandem solar cells. First, we analyse the material consumption and sustainable manufacturing capacity of a variety of potential candidates for the top cell in a silicon‐based tandem cell. We show that III‐V, CIGS and CdTe are not suitable to support TW‐scale manufacturing. Perovskites thus present the most sustainable approach, as long as indium is not required in the cell structure. Next, we turn our attention to the silicon bottom cell architecture by comparing PERC, TOPCon and SHJ. Although tandem cells can generally reduce silver consumption relative to single junction silicon cells due to the more favourable J MP / V MP ratio, the PERC cell architecture could allow for significantly reduced Ag consumption compared with both TOPCon and SHJ by relying on Al for the rear p‐type contact. In order to drive a rapid shift towards TW‐scale manufacturing, a rapid upscaling compared with the current production capacity is needed. The results presented herein highlight the need for careful consideration of sustainability issues when designing future high‐efficiency tandem cells that will help the world mitigate the dangers of climate change.
Publisher: Wiley
Date: 15-12-2022
DOI: 10.1002/PIP.3661
Abstract: The clean energy transition could see the cumulative installed capacity of photovoltaics increase from 1 TW before the end of 2022 to 15–60 TW by 2050, creating a significant silver demand risk. Here, we present a silver learning curve for the photovoltaic industry with a learning rate of 20.3 ± 0.8%. Maintaining business as usual with a dominance of p‐type technology could require over 20% of the current annual silver supply by 2027 and a cumulative 450–520 kt of silver until 2050, approximately 85–98% of the current global silver reserves. A rapid transition to higher efficiency tunnel oxide passivated contact and silicon heterojunction cell technologies in their present silver‐intensive forms could increase and accelerate silver demand. As we approach annual production capacities of over 1 TW by 2030, addressing the silver issue requires increased efforts in research and development to increase the silver learning rate by 30%, with existing silver‐lean and silver‐free metallisation approaches including copper plating and screen‐printing of aluminium and copper.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2015
Publisher: Wiley
Date: 21-09-2016
Publisher: Wiley
Date: 11-07-2016
Publisher: Elsevier BV
Date: 03-2015
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3EE00952A
Abstract: This review details the design considerations for the bottom silicon cell in perovskite/silicon tandems. The review highlights the shift in mindset required when transitioning to the mass production of tandem solar cells.
Publisher: IEEE
Date: 06-2015
Publisher: AIP Publishing
Date: 18-09-2017
DOI: 10.1063/1.4986134
Abstract: Measuring the spectral response of photoluminescence (SRPL) in solar cells has recently attracted attention as it can be used as a contactless relative measure of external quantum efficiency (EQE) prior to full device fabrication. However, this technique requires that the monitored PL spectrum originates mainly from a region in the solar cell with uniformly distributed majority carriers. For a stack of thin films with a similar material composition, the slightly different emission spectrum from each layer may lead to the superposition of several luminescence peaks. This letter presents the measurement of the SRPL from GaAsP tandem solar cells and outlines a method for separating the in idual layer contributions. Good agreement between measured SRPL and EQE at short wavelengths has been achieved, and the deviations at longer wavelengths have been analyzed. This study also reveals unexpected bandgap narrowing resulting from a variable material composition within the active region.
Publisher: Wiley
Date: 03-08-2022
Abstract: Herein, the current and future projected polysilicon demand for the photovoltaic (PV) industry toward broad electrification scenarios with 63.4 TW of PV installed by 2050 is studied. The current polysilicon demand by the PV industry in 2021 is equivalent to the consumption of 2.9–3.3 kt GW −1 . Depending on the physical constraints determining the lower limit for future polysilicon consumption, the annual demand can be 6–7 Mt year −1 in 2050 under broad electrification, which requires 10–12 times more of the current production capacity. To achieve broad electrification by 2050, cumulative demand of 46–87 Mt is required. An electricity requirement for purification, ingot pulling, and wafering of ≈360–380 kWh kg −1 for silicon wafers and carbon intensity can lead to a cumulative amount of ≈16.4–58.8 Gt of CO 2‐eq emissions by 2050. To reduce the environmental impact, efficiencies are increased, thinner wafers are used, kerf loss reduced, alternative purification methods with low emission intensities are explored, and opportunities for polysilicon production with decarbonized electricity are explored.
Publisher: AIP Publishing
Date: 12-12-2016
DOI: 10.1063/1.4972034
Abstract: Silicon germanium (SiGe) is a material with high mobility and relatively low bandgap making it an attractive candidate for the bottom subcell in a III-V tandem solar cell grown on silicon (Si) substrate. This paper reports on the performance improvement of an epitaxially grown SiGe on Si solar cell by growing a higher Ge composition SiGe layer in the base. The purpose of growing a higher Ge composition SiGe layer in the base is to improve the light absorption. The first iteration of this structure was an Si0.18Ge0.82 solar cell fabricated with a 1 μm thick Si0.12Ge0.88 layer in the base. This solar cell had a lower efficiency compared with the reference solar cell without the Si0.12Ge0.88 layer. One of the main reasons for the lower efficiency is believed to be the high threading dislocation density (TDD) caused by the abrupt change of lattice constant between Si0.18Ge0.82 and Si0.12Ge0.88 in the base. In order to reduce the TDD, the second iteration of the structure was fabricated with a compositionally graded SiGe base. With the new structure, an SiGe on Si solar cell with an efficiency of 3.1%, when filtered by a GaAs0.79P0.21 top cell, was fabricated. The Ge composition in the base of this solar cell gradually increased from 82% to 85% and then decreased again to 82%. The developed SiGe solar cell with graded base provides more flexibility for a highly efficient GaAsP/SiGe dual junction solar cell grown on an Si substrate.
Publisher: IEEE
Date: 06-2015
No related grants have been discovered for LI WANG.