ORCID Profile
0000-0002-6202-4193
Current Organisation
The University of Hong Kong
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Publisher: American Chemical Society (ACS)
Date: 25-03-2021
Publisher: American Chemical Society (ACS)
Date: 04-2020
Publisher: The Electrochemical Society
Date: 09-10-2022
DOI: 10.1149/MA2022-02361315MTGABS
Abstract: Even though competitive 2D field-effect transistors (FETs) with the scaled channel dimensions have been demonstrated, it still is a challenge to integrate 2D semiconductors and high- κ dielectrics without deteriorating their interfaces, while decreasing capacitance equivalent thickness (CET) of dielectrics to maintain the gate controllability. In particular, the dielectric/channel interface is one of the predominant factors to affect device performance, including carrier mobility, switching behavior, and drifts of device parameters. This is often caused by the nature of dielectrics used, and the integrating methodologies applied. Typically, high- κ dielectrics used in silicon technology (i.e., Al 2 O 3 and HfO 2 ) are inherited by 2D FETs. The amorphous nature of these oxides makes the elimination of charge scattering and trapping sites at the dielectric/channel interfaces extremely difficult, not to mention that the direct deposition of dielectrics usually damages the 2D channel and results in poor uniformity in sheer thickness. Some interfacial passivation layers and processes have been developed, but they lead to thickening overall CET instead. Alternative approaches with the crystalline dielectric materials such as multilayer hBN and epitaxial calcium fluoride (CaF 2 ), whose surfaces are well-constructed and atomic-flat, have demonstrated the competitive advantages of crystalline dielectric over the conventional amorphous oxides in spite of relatively lower κ values. Here, we demonstrate ultra-scaled 2D FETs with desirable sub-1 nm CET through heterogeneous integration of monolayer CVD MoS 2 and quasi-2D single-crystalline SrTiO 3 membranes, where the optimized SrTiO 3 gate dielectrics exhibit a low gate leakage ( J leak 10 -2 A/cm 2 at 2.5 MV/cm). Typical transistors manifest good reliability and competitive performance characteristics, including steep subthreshold swings (SS) down to ~70 mV dec -1 and ON/OFF current ratios up to 10 7 , matching low-power specifications suggested by the latest International Roadmap for Devices and Systems (IRDS). In addition, the van der Waals (vdW) interface between quasi-2D dielectrics and 2D semiconductors moderates the unfavorable fringing-induced barrier lowering (FIBL) effect occurring in ultra-scaled Si transistors with very high- κ dielectrics, which broadens the dielectric selection in 2D electronics for future technology node.
Publisher: American Chemical Society (ACS)
Date: 10-09-2018
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9NH00260J
Abstract: Bilayer WSe 2 nuclei were initially grown along the atomic steps of a sapphire substrate, resembling a “graphoepitaxial mechanism” and gradually formed into overlapped 2H stacked WSe 2 bilayers.
Publisher: American Chemical Society (ACS)
Date: 15-09-2017
Publisher: American Chemical Society (ACS)
Date: 25-04-2018
Abstract: Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS
Publisher: Springer Science and Business Media LLC
Date: 11-05-2022
DOI: 10.1038/S41586-022-04588-2
Abstract: The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents
Publisher: American Chemical Society (ACS)
Date: 08-01-2018
Abstract: Ultrathin two-dimensional (2D) polymeric layers are capable of separating gases and molecules based on the reported size exclusion mechanism. What is equally important but missing today is an exploration of the 2D layers with charge functionality, which enables applications using the charge exclusion principle. This work demonstrates a simple and scalable method of synthesizing a free-standing 2D coordination polymer Zn
Publisher: IOP Publishing
Date: 27-07-2020
Location: No location found
Location: Saudi Arabia
Location: Saudi Arabia
No related grants have been discovered for Yi Wan.