ORCID Profile
0000-0001-5381-6634
Current Organisations
Nanyang Technological University
,
Southeast University
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Publisher: American Chemical Society (ACS)
Date: 04-04-2022
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4RA02358G
Abstract: Lu doped polycrystalline In 2 O 3 compounds ( x = 0, 0.025, 0.05, 0.10, 0.15) were synthesized by a co-precipitation method followed by the spark plasma sintering processing. Hall Effect measurement indicates that the carrier concentration was drastically decreased with doping, although Lu and In have the same valence state.
Publisher: American Chemical Society (ACS)
Date: 09-06-2023
Publisher: Elsevier BV
Date: 04-2018
Publisher: Elsevier BV
Date: 07-2021
Publisher: IOP Publishing
Date: 04-09-2020
Publisher: Springer Science and Business Media LLC
Date: 29-01-2018
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D0NR06062C
Abstract: E-beam evaporated uniform 2D bismuth exhibits (thermo)electrical response tunable by either laser irradiation or the layer thickness.
Publisher: Elsevier BV
Date: 04-2023
Publisher: Elsevier BV
Date: 09-2015
Publisher: Wiley
Date: 24-01-2021
DOI: 10.1002/INF2.12169
Publisher: Springer Science and Business Media LLC
Date: 29-09-2022
Publisher: IOP Publishing
Date: 05-04-2023
Abstract: It has been highly demanded to optimize the charge carrier concentration in 2D Bi 2 Te 3 to achieve enhanced thermoelectric performance. This work reveals that, constructing 2D Bi 2 Te 3 /Si heterostructure with tuned interfacial electronic band structure can meet the above needs. When the work function in Si substrate is decreased from 4.6 to 4.06 eV, the charge carrier concentration and electron effective mass are increased simultaneously. Consequently, the electrical conductivity of 2D Bi 2 Te 3 on n ++ -Si has reaches up to 1250 S·cm −1 , which is 90% higher than the counterpart on SiO 2 /Si substrate, although the Seebeck coefficient in these two s les is around −103 μ V·K −1 . The resultant power factor of 2D Bi 2 Te 3 /n ++ -Si heterostructure is 13.4 μ W·cm −1 ·K −2 , which is one of the best values among similar studies ever reported. This work demonstrates a facile way to improve thermoelectric properties via interfacial engineering in a heterostructure.
Publisher: American Chemical Society (ACS)
Date: 09-11-2021
No related grants have been discovered for Beibei Zhu.