ORCID Profile
0000-0002-7299-3481
Current Organisation
UNSW Sydney
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Publisher: IEEE
Date: 14-06-2020
Publisher: American Chemical Society (ACS)
Date: 15-08-2022
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2021
Publisher: Elsevier BV
Date: 2020
Publisher: Wiley
Date: 28-04-2022
Abstract: Black silicon (BSi) is a branch of silicon material whose surface is specially processed to a micro/nanoscale structure, which can achieve ultra‐low reflectance or ultra‐high electrochemical reactivity. The ersity and complex surface structures of BSi make it challenging to commercialize BSi devices. Modeling and simulation are commonly used in the semiconductor industry to help in better understanding the material properties, predict the device performance, and provide guidelines for fabrication parameters’ optimization. The biggest challenge for BSi device modeling and simulation is obtaining accurate input surface morphological data. In this work, the 3D models of challenging BSi textures are compared as obtained by atomic force microscopy (AFM) and plasma focused ion beam (PFIB) tomography techniques. In previous work, the PFIB tomography workflow toward the application of surface topography is optimized. In this work, the 3D models obtained from both AFM and PFIB are comprehensively compared, by using the surface models as inputs for finite‐difference time‐domain‐based optical simulation. The results provide strong evidence that PFIB tomography is a better choice for characterizing highly roughened surface such as BSi and provides surface 3D models with better reliability and consistency.
Publisher: Wiley
Date: 31-05-2022
DOI: 10.1002/PIP.3594
Abstract: Passivated emitter and rear cell (PERC) with laser‐doped selective emitter (SE) has become mainstream in the PV industry. In this work, we report a solid strategy to realize heteroface monocrystalline silicon (mono‐Si) wafers for PERC‐SE solar cells by employing alkaline polishing to form a polished surface for the rear side and well‐established metal‐catalyzed chemical etching to form a honeycomb texture for the front side in one wet process successively. The key to success lies in the fact that the two back‐to‐back wafers inserted into one slot in the cassette are tightly attached together in MCCE etching so that only the exposed surfaces are etched to form textures, while the rear polished surfaces are still retained to avoid wrap‐around etching. With the strategy, the mono‐Si PERC‐SE solar cells achieve an average efficiency of over 22.0%, no poorer than that of the reference system (traditional alkaline texturing and rear acidic polishing), and have good light trapping capability for oblique incident light. Moreover, the total Si removal in the novel process is only ~0.4 g, which is far less than that in the traditional process. More importantly, the strategy can also double the throughput of existing texturing processes and significantly reduce the amount of etching waste. Therefore, the work is expected to provide a promising way to mass produce efficient mono‐Si PERC‐SE solar cells with a superior rear surface, achieved without increasing the number of processing steps, and lower cost.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2021
Publisher: Wiley
Date: 25-09-2022
Abstract: Phosphorous dopant diffusion profiles feature in many silicon semiconductor devices, including the vast majority of silicon solar cells. Accurate spatially resolved dopant profiling is crucial for understanding the performance of these diffused regions, however, it is very challenging to obtain such profiles in non‐planar s les. Scanning electron microscopy for dopant contrast imaging (SEMDCI), where the secondary electron (SE) image contrast is used to determine the dopant level of a semiconductor s le, is an ideal candidate for Si dopant profiling, especially for silicon s les with surface nanotexturing or black silicon (BSi) technology. However, in previous SEMDCI studies, the dopant concentration of heavily doped n‐type layers in silicon s les have shown a poor correlation with the SE signal contrast. In this work, 1) good contrast for n‐type diffused silicon without contrast‐enhancing techniques 2) a new contrast definition to account for imaging non‐uniformities 3) clear correlations between SE contrast and s le work function for phosphorus‐diffused planar silicon specimens across a wide range of emitter profiles 4) implementation of an empirical baseline correction to normalize scanning electron microscopy image condition variations, are presented. This SEMDCI method is subsequently used for the first time to obtain 2D electron concentration maps for both planar and BSi s les.
Publisher: Wiley
Date: 16-07-2022
DOI: 10.1002/PIP.3607
Abstract: In this work, single‐side aluminum oxide (Al 2 O 3 ) deposition enabled by a new tube‐type industrial plasma‐assisted atomic layer deposition (PEALD) technique is presented to meet the increasingly stringent requirements for high‐efficiency solar cell mass production. Extremely low emitter saturation current densities, J 0e , down to 15 fA/cm 2 are achieved on an industrial textured boron emitter with a sheet resistance of 104 Ω/sq, passivated by PEALD Al 2 O 3 /PECVD SiN x stack after firing. An implied open‐circuit voltage of up to 721 mV is obtained on symmetrical lifetime s les. The underlying passivation mechanisms of this new tube‐type PEALD Al 2 O 3 are investigated by contactless corona‐voltage measurements. The results indicate that the superior passivation is mainly attributed to a low interface defect density down to 1.1 × 10 11 cm −2 eV −1 and a high negative fixed charge density up to 4.5 × 10 12 cm −2 . Simulations show that the obtained J 0e is close to its intrinsic limit. Lastly, the developed tube‐type PEALD Al 2 O 3 is applied to industrial TOPCon solar cells achieving an average cell efficiency above 24% and a maximum V oc of 707 mV. This work shows that the record level of surface passivation available from lab‐scale PEALD reactors is now available in a flexible high‐throughput industrial PEALD platform, which opens a new route for mass production of high‐efficiency industrial TOPCon solar cells with a lean process at low costs.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2022
No related grants have been discovered for Shaozhou Wang.