ORCID Profile
0000-0001-6384-4890
Current Organisation
Brunel University London
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Publisher: SPIE
Date: 02-07-1998
DOI: 10.1117/12.312764
Publisher: Institution of Engineering and Technology (IET)
Date: 2005
DOI: 10.1049/EL:20052859
Publisher: AIP Publishing
Date: 15-04-1984
DOI: 10.1063/1.333300
Abstract: The absorption of 9–11 μm radiation by thin wafers of lightly doped, n-type Si has been measured at several lattice temperatures from 300 to 800 K. The temperature dependence of the absorption coefficient at λ=10.6 μm is extracted from the data and compared with previous measurements and also with recent theoretical models. A novel processing technique is described in which coupling of the CO2 laser radiation to the Si lattice is significantly enhanced by the simultaneous absorption of radiation from an argon laser.
Publisher: Springer Science and Business Media LLC
Date: 10-2002
Publisher: Springer Science and Business Media LLC
Date: 08-1988
DOI: 10.1007/BF01141588
Publisher: Elsevier BV
Date: 2008
Publisher: Wiley
Date: 27-01-2006
Publisher: Elsevier BV
Date: 2002
Publisher: The Electrochemical Society
Date: 2009
DOI: 10.1149/1.3156639
Publisher: AIP Publishing
Date: 07-1984
DOI: 10.1063/1.94977
Abstract: We report the first pulse width study of the various morphological changes and bulk phase transitions of single crystal silicon irradiated by 1-μm pulses of 4–260-ps duration. In particular, we find that amorphous silicon is formed from the melt contrary to published expectations, but only for pulse widths less than 10 ps. We also find that the single shot melting threshold is pulse width dependent. Additionally, we observe the growth of multishot damage and of periodic ripple patterns with pulses as short as 4 ps.
Publisher: Elsevier BV
Date: 04-2004
Publisher: Elsevier BV
Date: 02-2001
Publisher: IOP Publishing
Date: 28-09-1999
Publisher: IOP Publishing
Date: 03-12-2009
DOI: 10.1088/0957-4484/21/2/025304
Abstract: We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
Publisher: AIP Publishing
Date: 19-12-1994
DOI: 10.1063/1.112422
Abstract: A novel and simple technique for the synthesis of Ge nanocrystals embedded in SiO2 is reported. The method is fully compatible with silicon microelectronic technology and relies solely upon low temperature (only 550 °C) ultraviolet oxidation of Si0.8Ge0.2 strained layers. This temperature is significantly lower than that usually used for the formation of Ge nanocrystals from SiGe oxides by H2 reduction.
Publisher: Elsevier BV
Date: 12-2000
Publisher: Springer Science and Business Media LLC
Date: 06-1983
DOI: 10.1038/303481A0
Publisher: Elsevier BV
Date: 2002
Publisher: Optica Publishing Group
Date: 12-01-2007
DOI: 10.1364/OL.32.000214
Abstract: We present what is to our knowledge the first demonstration of a tunable fiber Bragg grating device in polymer optical fiber that utilizes a thin-film resistive heater deposited on the surface of the fiber. The polymer fiber was coated via photochemical deposition of a Pd/Cu metallic layer with a procedure induced by vacuum-ultraviolet radiation at room temperature. The resulting device, when wavelength tuned via joule heating, underwent a wavelength shift of 2 nm for a moderate input power of 160 mW, a wavelength to input power coefficient of -13.4 pm/mW, and a time constant of 1.7 s(-1).
Publisher: SPIE
Date: 02-07-1998
DOI: 10.1117/12.312756
Publisher: AIP Publishing
Date: 06-01-2017
DOI: 10.1063/1.331239
Abstract: Infrared transmission spectra of a series of silicon dioxide (SiO2) films grown on silicon wafers from a HCl and O2 gas mixture at 850 °C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer’s Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm−1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm−1 has been found, moving from an asymptotic limit maximum of ∼1070 cm−1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.
Publisher: SPIE
Date: 11-02-2010
DOI: 10.1117/12.847091
Publisher: Springer Science and Business Media LLC
Date: 08-06-2013
Publisher: Elsevier BV
Date: 08-2007
Publisher: Elsevier BV
Date: 03-2003
Publisher: Elsevier BV
Date: 09-2002
Publisher: Elsevier BV
Date: 04-2004
Publisher: Springer Science and Business Media LLC
Date: 27-11-2015
DOI: 10.1557/MRS.2015.271
Publisher: Elsevier BV
Date: 03-2003
Publisher: AIP Publishing
Date: 25-07-1994
DOI: 10.1063/1.112318
Abstract: Rapid thermal oxidation of Si in a mixed oxygen and ozone ambient in the temperature range of 600–1200 °C is reported. Between 600 and 800 °C a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperatures above 950 °C conventional thermal oxidation dominates and no significant enhancement is found.
Publisher: Elsevier BV
Date: 02-1995
Publisher: Elsevier BV
Date: 02-2000
Publisher: Elsevier BV
Date: 2002
Publisher: Hindawi Limited
Date: 20-06-2014
DOI: 10.1002/ER.3214
Publisher: Elsevier BV
Date: 06-1999
Publisher: IOP Publishing
Date: 14-10-1988
Publisher: Elsevier BV
Date: 07-2007
Publisher: Elsevier BV
Date: 2002
Publisher: AIP Publishing
Date: 15-02-1994
DOI: 10.1063/1.356320
Abstract: Ultraviolet-assisted low-temperature (550 °C) dry oxidation of Si0.8Ge0.2 strained layers on (100)Si has been studied. The oxidation rate of this material was found to be a factor of 2 greater than that of pure Si oxidation under identical irradiation conditions. Initially, the structure of the oxidized material consists of a SiO2 layer on top of a strained Si1−xGex layer with a Ge concentration significantly higher (x≳0.2) than the initial value. Increasing the oxidation time produces more SiO2 and a Si1−xGex layer further enriched with Ge. However, the oxidation rate is reduced and some of the Ge becomes trapped inside the growing SiO2 layer. For a prolonged irradiation time (≳5 h) SiGe oxidation still continues, unlike the case for pure Si, while the Ge trapped inside the SiO2 forms isolated microcrystalline regions.
Publisher: American Chemical Society (ACS)
Date: 22-10-2015
Publisher: Springer Science and Business Media LLC
Date: 02-2002
Publisher: SPIE
Date: 21-04-2006
DOI: 10.1117/12.662306
Publisher: Elsevier BV
Date: 04-1996
Publisher: SPIE
Date: 26-05-2006
DOI: 10.1117/12.686233
Publisher: SPIE
Date: 17-03-2003
DOI: 10.1117/12.463984
Publisher: Elsevier BV
Date: 10-2000
Publisher: Elsevier BV
Date: 02-1996
Publisher: AIP Publishing
Date: 28-10-2016
DOI: 10.1063/1.4965989
Publisher: Informa UK Limited
Date: 09-1983
Publisher: Elsevier BV
Date: 04-2005
Publisher: AIP Publishing
Date: 15-11-2008
DOI: 10.1063/1.3029664
Abstract: Composition-dependent electronic structure and optical properties of Hf1−xSixOy (0.1≤x≤0.6) gate dielectrics on Si at 450 °C grown by UV-photo-induced chemical vapor deposition (UV-CVD) have been investigated via x-ray photoemission spectroscopy and spectroscopy ellipsometry (SE). By means of the chemical shifts in the Hf 4f, Si 2p, and O 1s spectra, the Hf–O–Si bondings in the as-deposited films have been confirmed. Analyses of composition-dependent band alignment of Hf1−xSixOy/Si gate stacks have shown that the valence band (VB) offset (ΔEv) demonstrates little change however, the values of conduction band offset (ΔEc) increase with the increase in the silicon atomic composition, resulting from the increase in the separation between oxygen 2p orbital VB state and antibonding d states intermixed of Hf and Si. Analysis by SE, based on the Tauc–Lorentz model, has indicated that decreases in the optical dielectric constant and increase in band gap have been observed as a function of silicon contents. Changes in the complex dielectric functions and band gap Eg related to the silicon concentration in the films are discussed systematically. From the band offset and band gap viewpoint, these results suggest that Hf1−xSixOy films provide sufficient tunneling barriers for electrons and holes, making them promising candidates as alternative gate dielectrics.
Publisher: Elsevier BV
Date: 04-2004
Publisher: Springer Science and Business Media LLC
Date: 09-2003
DOI: 10.1038/NMAT968
Publisher: AIP Publishing
Date: 27-09-1993
DOI: 10.1063/1.110705
Abstract: Excimer l s have recently opened up the field of intense vacuum ultraviolet light generation. The power available from such l s based on the dielectric barrier discharge generation method can be superior to those of typical low pressure mercury l s. Additionally, a wide range of shorter and longer wavelengths can be generated as required. Following previous work on silicon dioxide deposition, here we present the use of these l s for direct photodeposition of silicon nitride from mixtures of silane and ammonia. Optical and physical characterization reveal good film qualities, rendering this new technique promising for low temperature semiconductor and optoelectronic material processing.
Publisher: IOP Publishing
Date: 16-08-1999
Publisher: Elsevier BV
Date: 03-2004
Publisher: Elsevier BV
Date: 08-2001
Publisher: Elsevier BV
Date: 12-2003
Publisher: IOP Publishing
Date: 06-1988
Publisher: AIP Publishing
Date: 13-12-1993
DOI: 10.1063/1.110149
Abstract: Superconducting thin films of Pb-doped BiSrCaCuO have been prepared on (001) orientation MgO substrates by a multilayer pulse laser deposition technique using both BiPbSrCaCuO and PbO targets. The PbO target was used to dope Pb into the films in sufficient quantity to facilitate the growth of the 2223 phase. The effect of post-annealing temperature and time duration on the formation of this phase is described. Using x-ray diffraction and resistivity measurements we have found that a near optimum single phase 2223 film can be grown by post-annealing the s le at 854 °C for 15 h in air. The films grown are highly c-axis oriented and exhibit Tc(zero) as high as 105.5 K.
Publisher: SPIE
Date: 18-05-1989
DOI: 10.1117/12.950621
Publisher: Elsevier BV
Date: 07-2007
Publisher: Wiley
Date: 22-08-2012
Publisher: Elsevier BV
Date: 06-2011
Publisher: Institution of Engineering and Technology (IET)
Date: 2005
DOI: 10.1049/EL:20051618
Publisher: American Vacuum Society
Date: 20-04-2006
DOI: 10.1116/1.2190649
Abstract: We investigate the effects of the thickness reduction and specific postannealing treatments in order to improve the electrical properties of yttrium oxide-based metal-insulator-metal (MIM) capacitors. The films were grown on Si∕TiSi2∕TiN substrates at 350°C by a low temperature process (pulsed liquid injection plasma-enhanced metal organic chemical vapor deposition). Although the thickness reduction leads to an increase of the capacitance density, the other electrical characteristics (the voltage linearity, the leakage currents, and the voltage breakdown) are seriously deteriorated due to the augmentation of the electric field. Low thermal budget annealing posttreatments (⩽450°C) were carried out in a gas flux (Ar, O2, and H2) and under an ultraviolet (UV) radiation (O2 and N2). We demonstrate that the UV-O2 annealing treatment is particularly efficient in improving the voltage linearity, the leakage currents, and the electric field breakdown. The improved electrical properties after the UV-O2 annealing can be related to chemical modifications (organic content reduction and oxygen content increase). The voltage linearity improvement is most likely due to the presence of a residual oxidized silicon ultrathin layer on the top surface of the yttrium oxide films. Thus, a UV-O2 annealing is an effective postdeposition treatment that is compatible with the low thermal budget, which is required for MIM applications.
Publisher: Elsevier BV
Date: 2002
Publisher: Elsevier BV
Date: 1996
Publisher: Elsevier BV
Date: 10-2000
Publisher: Wiley
Date: 11-01-2006
Publisher: AIP Publishing
Date: 15-04-1983
DOI: 10.1063/1.94041
Abstract: A scanning cw argon ion laser has been used to rapidly heat Si in a fixed oxygen atmosphere to produce thin oxide layers on the surface. Analysis of the growth rate of these films reveals an enhancement over the normal thermal equilibrium rate of oxidation for silicon dioxide layers grown by furnace in the temperature range 850–1050 °C, and is thought to be a result of the photoionizing effect of the band-gap photon flux. A simple model incorporating this characteristic is shown to qualitatively agree with the experimental results, and clearly indicates the importance of the density of broken Si–Si bonds in the oxidation reaction.
Publisher: Springer Science and Business Media LLC
Date: 06-1986
DOI: 10.1038/321649A0
Publisher: Institution of Engineering and Technology (IET)
Date: 31-03-1994
DOI: 10.1049/EL:19940412
Publisher: Elsevier BV
Date: 02-1995
Publisher: Springer Science and Business Media LLC
Date: 06-1987
Publisher: Elsevier BV
Date: 12-2000
Publisher: Elsevier BV
Date: 09-2006
Publisher: AIP Publishing
Date: 10-08-1987
DOI: 10.1063/1.98408
Abstract: It is found that the characteristic infrared spectra of thermally grown silicon dioxide in the 1075 cm−1 region for films in the thickness range 28–450 Å mathematically deconvolute consistently into two distinctly separate Gaussian profiles. The derived peaks are found around 1050 cm−1 with a full width at half-maximum transmission value (FWHM) of 65 cm−1, and near 1085 cm−1 with a FWHM of 35 cm−1. The relative band areas of these two features are consistently found to be approximately 0.76 and 0.24, respectively. These observations could be supportive of at least two structural models of amorphous silicon dioxide disclaiming the generally accepted continuous random network arrangement.
Publisher: AIP Publishing
Date: 08-1986
DOI: 10.1063/1.337362
Abstract: The numerous bulk and surface structural changes observed in c-Si following melting with 1-μm pulses that range from 4 to 260 ps in duration and fluences from about 0.6 to 2.8 J cm−2 are examined by Nomarski and transmission electron microscope techniques. For melting pulse widths 30 ps or longer, recrystallization from the melt was observed. By contrast, for the shorter pulses (∼7 ps), the steep temperature gradients that accompany the onset of two-photon absorption associated with pulses of this width produce an undercooled melt. Under these conditions, the resolidification velocities are evidently too high to allow epitaxial regrowth from the crystalline substrate and, for the first time, regions of amorphous and large- and fine-grain polycrystalline silicon are observed to form directly on a crystalline underlayer. In addition, alternate stripes of amorphous and crystalline material are produced by these short pulses. These are associated with localized melting, demonstrating that uniform surface melting is not always required before a spatial modulation of the absorbed surface energy can occur.
Publisher: AIP Publishing
Date: 12-10-1987
DOI: 10.1063/1.98767
Abstract: A cw argon laser was used to oxidize crystalline silicon in dry oxygen. Under otherwise identical conditions, two visible wavelengths were used to identify possible nonthermal contributions to the reaction. With a simple technique to lify small differences in the growth rate we have confirmed that the reaction is primarily thermally controlled and that there is a photonic enhancement to Si oxidation. A simulation has also provided some initial quantitative evaluation of the process.
Publisher: Elsevier BV
Date: 02-1995
Publisher: American Chemical Society (ACS)
Date: 17-06-2011
DOI: 10.1021/JP200567R
Publisher: Springer Science and Business Media LLC
Date: 14-09-2005
Publisher: Elsevier BV
Date: 04-2004
Publisher: Elsevier BV
Date: 04-2003
Publisher: Elsevier BV
Date: 03-2007
Publisher: Springer Science and Business Media LLC
Date: 04-07-2013
Publisher: Elsevier BV
Date: 03-2003
Publisher: Elsevier BV
Date: 02-2000
Publisher: AIP Publishing
Date: 09-1990
DOI: 10.1063/1.346535
Abstract: X-ray diffraction data of Bi1.4Pb0.6Sr2Ca2Cu3.6O10+x s les show a sharp change near the annealing temperature of 845 °C. Below this temperature a solid solution of (Ca0.867Sr0.133)2PbO4 is formed and prolonged annealing leads to transformation of the 2212 phase to the 2223 phase. Above this temperature, Ca2PbO4 is formed, and prolonged annealing leads to an irreversible transformation of both the 2212 phase and the 2223 phase to the 2201 phase.
Publisher: Elsevier BV
Date: 12-2000
Publisher: Elsevier BV
Date: 04-1996
Publisher: AIP Publishing
Date: 1994
DOI: 10.1063/1.355888
Abstract: A report on the use of a low pressure Hg discharge l to grow 100 Å SiO2 layers on Si at 550 °C. The induced reaction rate is more than 12 times that for thermal oxidation of Si at 612 °C, indicating that the growth mechanism is photonically controlled. We tentatively suggest that the induced oxidation is based on space-charge controlled drift of ionic oxygen species created in the SiO2 by charge photoinjected from the Si. Simple modeling predicts a limiting thickness for film growth that is confirmed by experimental evidence. An activation energy of 0.56 eV extracted from the data compares with values of 0.14 – 0.7 eV previously reported for oxidation of silicon by O or O− species.
Publisher: Elsevier BV
Date: 2002
Publisher: Springer Science and Business Media LLC
Date: 1985
DOI: 10.1038/313100A0
Publisher: Elsevier BV
Date: 2002
Publisher: Elsevier BV
Date: 03-2003
Publisher: Elsevier BV
Date: 02-2013
Publisher: Wiley
Date: 06-06-2005
Publisher: AIP Publishing
Date: 10-1994
DOI: 10.1063/1.357326
Abstract: We have exploited the excimer light generation principle to generate large photon fluxes over a narrow band of very short wavelengths around 172 nm. By irradiating gas mixtures of silane and oxygen with this light, we have succeeded in directly photodepositing silicon dioxide films. Very high deposition rates (500 Å/min) have been obtained for substrate temperatures as low as 300 °C. The deposited films have been characterized using ellipsometry and Fourier transform infrared spectroscopy. The influence of the deposition parameters on the film properties and their optimization are discussed. In particular, we describe the minimization of hydrogen incorporation in the films, rendering this new technique promising for applications in optical and electronic thin film processing.
Publisher: Elsevier BV
Date: 2002
Publisher: Springer Science and Business Media LLC
Date: 09-1980
DOI: 10.1038/287278A0
Publisher: Wiley
Date: 08-06-2005
Publisher: AIP Publishing
Date: 24-04-2017
DOI: 10.1063/1.4982594
Abstract: III-nitride core-shell nanorods are promising for the development of high efficiency light emitting diodes and novel optical devices. We reveal the nanoscale optical and structural properties of core-shell InGaN nanorods formed by combined top-down etching and regrowth to achieve non-polar sidewalls with a low density of extended defects. While the luminescence is uniform along the non-polar {1–100} sidewalls, nano-cathodoluminescence shows a sharp reduction in the luminescent intensity at the intersection of the non-polar {1–100} facets. The reduction in the luminescent intensity is accompanied by a reduction in the emission energy localised at the apex of the corners. Correlative compositional analysis reveals an increasing indium content towards the corner except at the apex itself. We propose that the observed variations in the structure and chemistry are responsible for the changes in the optical properties at the corners of the nanorods. The insights revealed by nano-cathodoluminescence will aid in the future development of higher efficiency core-shell nanorods.
Publisher: IOP Publishing
Date: 12-09-2007
Publisher: Elsevier BV
Date: 03-2003
Publisher: Elsevier BV
Date: 03-2003
Publisher: AIP Publishing
Date: 19-09-1994
DOI: 10.1063/1.112918
Abstract: We report the oxidation of silicon at and below 550 °C in a mixture of oxygen and fluorine. Introduction of small concentrations of fluorine (& .1%) in the oxygen ambient increases the oxide growth sharply to rates in excess of 8 Å/min where the average fluorine concentration in the oxide can exceed 6 at. %. For each oxidation temperature there was a unique fluorine concentration at which the oxidation rate was at its highest. Fluorine depth profiles in the film were determined by high depth resolution nuclear reaction analysis, and high interface concentrations of fluorine were observed.
Publisher: Springer Science and Business Media LLC
Date: 05-1988
Publisher: IOP Publishing
Date: 05-2012
Publisher: AIP Publishing
Date: 09-02-1987
DOI: 10.1063/1.98187
Abstract: Differential infrared spectroscopy has been used to study the silicon-oxygen stretching band of thin silicon dioxide films thermally grown on single-crystal silicon. We consistently observe an asymmetry in the spectra of films thicker than about 100 Å, of about 9 cm−1. The peak position, width, and degree of asymmetry are also found to be sensitively dependent upon film thickness below 100–150 Å, while above this level these features are only very weakly dependent upon film thickness, indicating the presence of a thin layer of different structural or bonding properties. Our interpretation suggests that the infrared spectra of layers up to 100 Å thick are significantly affected by strain originating at the silicon-oxide interface, in agreement with recent observations.
Publisher: AIP Publishing
Date: 05-12-1994
DOI: 10.1063/1.112478
Abstract: Thin films of ZnO have been deposited on glass and silicon substrates by the pulsed laser deposition technique employing a KrF laser (λ=248 nm). The influence of the deposition parameters, such as substrate temperature, oxygen pressure, and laser fluence on the properties of the grown films, has been studied. All the films grown over a rather wide range of deposition conditions were found to be optically transparent, electrically conductive, and c-axis oriented, with the full width at half-maximum (FWHM) of the (002) x-ray reflection line being very often less than 0.25°. Under optimized laser fluence and oxygen pressure conditions, highly c-axis oriented films having a FWHM value less than 0.15° and optical transmittance around 85% in the visible region of the spectrum have been grown at a substrate temperature of only 350 °C. These are among the best properties yet reported for ZnO films grown by any technique at such a low temperature.
Publisher: Springer Science and Business Media LLC
Date: 11-1988
DOI: 10.1007/BF00615930
Publisher: AIP Publishing
Date: 15-10-1987
DOI: 10.1063/1.339320
Abstract: We have investigated, using differential infrared spectroscopy, the transition region between single-crystal silicon and its natural thermally grown oxide. By monitoring the thickness-dependent behavior of the stretching mode of the Si–O bond near 1075 cm−1, we isolate bulk oxide characteristics and features arising from interface constraints, finding that films up to 100 Å are still affected by interface effects. For thicker films we observe a consistent degree of asymmetry in the Si-O absorption band of about 9 cm−1, which does not exhibit a strong dependence on thickness. By contrast, the peak position, width, and degree of symmetry are found to be sensitively dependent upon film thickness below 100 Å, providing evidence for structurally distinct phases of silicon dioxide. Our initial interpretation suggests that the infrared spectra of such thin layers may be significantly affected by strain originating at the Si-oxide interface, rather than oxygen deficiency or overstoichiometry.
Publisher: AIP Publishing
Date: 15-02-1985
DOI: 10.1063/1.95633
Abstract: The reflectivity of crystalline silicon irradiated by intense 46-ps pulses at 1 μm has been measured using an optical pump-probe technique and also by imaging the irradiated s le surface on to a vidicon. We clearly resolve dramatic fluence-dependent reflectivity changes across the profile of the melted region that are consistent with rapid melting within the pulse duration and the formation of a superheated liquid layer.
Publisher: Elsevier BV
Date: 04-1996
Publisher: Elsevier BV
Date: 04-2004
Publisher: Elsevier BV
Date: 05-2005
Publisher: Elsevier BV
Date: 04-1996
Publisher: AIP Publishing
Date: 19-10-1998
DOI: 10.1063/1.121803
Abstract: A method is presented for the photodeposition of tantalum oxide films from tantalum ethoxide and nitrous oxide using 172 nm radiation. The composition of the tantalum oxides deposited by this technique was determined by x-ray photoelectron spectroscopy while the optical and electrical properties were characterized using ellipsometry, capacitance–voltage, and current–voltage techniques. A leakage current density as low as 3.2×10−7 A cm−2 at a voltage of 10 V is obtained for the as-grown films. This is several orders of magnitude better than for any other Ta2O5 films deposited using either conventional or plasma-chemical vapor deposition techniques.
Publisher: Elsevier BV
Date: 07-2003
Publisher: AIP Publishing
Date: 09-11-1998
DOI: 10.1063/1.122577
Abstract: A range of La–Ca–Mn–O films have been grown using pulsed-laser deposition on hot Si substrates. The composition of the films is found to be strongly dependent on substrate temperature (Ts) with the calcium and oxygen content being significantly reduced at high Ts (& °C). The kinetic energies of the various ions in the laser generated plume are found to be distributed in the 10–100 eV range, high enough to induce resputtering from deposited films. Surface segregation was also observed in the films grown at high Ts (& °C), resulting in a Ca-rich surface. Preferential resputtering of these surface Ca-rich segregated s les, driven by a mixture of high energy ion irradiation and thermally activated processes, is proposed to explain the observed phenomena.
Publisher: Elsevier BV
Date: 04-2004
Publisher: Elsevier BV
Date: 12-2000
Publisher: AIP Publishing
Date: 11-1993
DOI: 10.1063/1.110467
Abstract: We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550 °C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550 °C films up to 260 Å in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850 °C.
Publisher: IOP Publishing
Date: 04-1982
Publisher: Elsevier BV
Date: 04-2004
Publisher: Elsevier BV
Date: 12-2015
Publisher: Elsevier BV
Date: 04-2000
Publisher: Elsevier BV
Date: 09-1999
Publisher: AIP Publishing
Date: 06-1983
DOI: 10.1063/1.332424
Abstract: The dielectric breakdown strength of CO2 laser-grown oxides is measured and compared with other SiO2 films grown by well-established techniques. For the first time, the successful application of laser technology with existing Integrated Circuit preparation techniques to manufacture simple Metal-Oxide-Silicon devices is reported. Optimum processing conditions for CO2 laser oxidation of Si are described which eliminate such common laser-induced faults as slip dislocation and wafer warpage. The average field strength exhibited by the first capacitor to break down from several batches of 100 incorporating a laser-grown oxide layer was found to be 8.3 MV cm−1.
Publisher: Elsevier BV
Date: 03-2003
Publisher: Springer Science and Business Media LLC
Date: 07-2005
Publisher: Elsevier BV
Date: 05-2005
Publisher: Elsevier BV
Date: 12-2000
Publisher: Elsevier BV
Date: 12-2000
Publisher: Elsevier BV
Date: 04-1996
Publisher: Elsevier BV
Date: 08-2001
Publisher: Elsevier BV
Date: 04-2004
Publisher: AIP Publishing
Date: 15-07-1982
DOI: 10.1063/1.93439
Abstract: We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half-width of the Si-O stretching vibration at 1070 cm−1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO2-Si-Al diodes, the dielectric properties of the films have been studied.
Publisher: Elsevier BV
Date: 05-2002
Location: United Kingdom of Great Britain and Northern Ireland
Location: United Kingdom of Great Britain and Northern Ireland
Location: United Kingdom of Great Britain and Northern Ireland
Location: United Kingdom of Great Britain and Northern Ireland
No related grants have been discovered for ian boyd.