ORCID Profile
0000-0003-1522-9281
Current Organisation
University of Technology Sydney
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Materials Engineering | Materials Engineering Not Elsewhere Classified | Nanotechnology | Nanotechnology | Instruments And Techniques | Nanomaterials | Nanoscale Characterisation | Optics And Opto-Electronic Physics | Composite Materials | Compound Semiconductors | Condensed Matter Physics—Electronic And Magnetic Properties; | Condensed Matter Physics—Other | Biotechnology Not Elsewhere Classified | Other Physical Sciences | Nanofabrication, Growth and Self Assembly | Biochemistry And Cell Biology Not Elsewhere Classified | Optical Physics | Biological And Medical Chemistry | Functional Materials | Other Electronic Engineering | Infectious Agents | Metals and Alloy Materials | Ceramics | Composite and Hybrid Materials | Photonics, Optoelectronics and Optical Communications | Quantum Optics And Lasers | Biomaterials | Infectious Diseases | Climatology (Incl. Palaeoclimatology) | Nanomanufacturing | Clinical Sciences | Interdisciplinary Engineering Not Elsewhere Classified | Nuclear And Particle Physics | Physical Sciences Not Elsewhere Classified |
ANZSRC Socio-Economic Objective (SEO)
Physical sciences | Other | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Instrumentation not elsewhere classified | Integrated circuits and devices | Communication equipment not elsewhere classified | Scientific instrumentation | Communication services not elsewhere classified | Navy | Biological sciences | Other | Land and water management | Ceramics, glass and industrial mineral products not elsewhere classified | Renewable energy not elsewhere classified (e.g. geothermal) | Energy storage | Infectious diseases | Industrial instrumentation | Endocrine organs and diseases (incl. diabetes) | Other | Expanding Knowledge in the Medical and Health Sciences | Expanding Knowledge in the Chemical Sciences | Scientific Instruments | Expanding Knowledge in Engineering | Expanding Knowledge in the Biological Sciences | Food safety | Other
Related Links
Publications
Structural characterization of B-doped diamond nanoindentation tips
Publisher: Springer Science and Business Media LLC
Date: 24-11-2011
DOI: 10.1557/JMR.2011.377
Controlled assembly of 1,4-phenylenedimethanethiol molecular nanostructures
Publisher: American Chemical Society (ACS)
Date: 07-04-2006
DOI: 10.1021/CM052647U
Decomposition of wavelength dispersive x-ray spectra
Publisher: National Institute of Standards and Technology (NIST)
Date: 11-2002
DOI: 10.6028/JRES.107.044
Ion implantation into GaN: Opportunities and problems
Publisher: IEEE
Date: 2000
Stability Of InGaN/GaN MQW Luminescence Under Prolonged High Current Injection
Publisher: Oxford University Press (OUP)
Date: 07-2012
DOI: 10.1017/S1431927612011233
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in gan and electron-beam lithography exposure parameters for a PMMA resist
Publisher: Oxford University Press (OUP)
Date: 12-11-2012
DOI: 10.1017/S1431927612013414
Abstract: The Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two ex les are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Publisher: IOP Publishing
Date: 29-07-2014
Optical properties of manganese doped wide band gap ZnS and ZnO
Publisher: Elsevier BV
Date: 10-2009
Multi-wavelength emission through self-induced defects in GaZnO microrods
Publisher: Elsevier BV
Date: 02-2022
Visualization Of Vortex Motion In Feas-Based Bafe(1.9)Ni(0.1)As(2) Single Crystal By Means Of Magneto-Optical Imaging
Publisher: AIP Publishing
Date: 04-2011
DOI: 10.1063/1.3562261
Abstract: Superconductivity has been found in newly discovered iron-based compounds. This paper studies the motion of magnetic vortices in BaFe1.9Ni0.1As2 single crystal by means of the magneto-optical imaging technique. A series of magneto-optical images reflecting magnetic flux distribution at the crystal surface were taken when the crystal was zero-field cooled to 10 K. The behavior of the vortices, including penetration into and expulsion from the single crystal with increasing and decreasing external fields, respectively, is discussed. The motion behavior is similar to that observed in high-Tc superconducting cuprates with strong vortex pinning however, the flux-front is irregular due to randomly distributed defects in the crystal.
Investigation of phosphonic acid surface modifications on zinc oxide nanoparticles under ambient conditions
Publisher: Elsevier BV
Date: 08-2014
Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Publisher: Springer Science and Business Media LLC
Date: 16-11-2017
DOI: 10.1038/S41598-017-14857-0
Abstract: A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.
Coalescence of ZnO nanowires grown from monodispersed Au nanoparticles
Publisher: arXiv
Date: 2015
Surface electronic properties of ZnO nanoparticles
Publisher: AIP Publishing
Date: 30-06-2008
DOI: 10.1063/1.2952955
Abstract: The surface electronic structure of ZnO nanoparticles has been studied with photoemission and x-ray absorption spectroscopies. Contrary to expectation, ZnO:Zn phosphor nanoparticles were found to contain a lower oxygen vacancy density on the surface than undoped ZnO counterparts, but oxygen vacancies are in different chemical environments. Cathodoluminescence shows intense green luminescence from the ZnO:Zn surface, while the undoped nanoparticles exhibit only the near-band-edge emission. The results indicate the roles of surface oxygen vacancies and their environment in the previously unexplained green luminescence from the ZnO:Zn material.
Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures
Publisher: IEEE
Date: 2000
Performance Of Simulcast Wireless Techniques For Personal Communication Systems
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-1996
DOI: 10.1109/49.490414
Kinetics of charge carrier recombination in beta-Ga2O3 single crystals (Conference Presentation)
Publisher: SPIE
Date: 08-03-2019
DOI: 10.1117/12.2518229
Implications of polishing techniques in quantitative X-ray microanalysis
Publisher: National Institute of Standards and Technology (NIST)
Date: 11-2002
DOI: 10.6028/JRES.107.052
Cathodoluminescence microanalysis of natural hydrated amorphous SiO2 ; opal
Publisher: Springer Science and Business Media LLC
Date: 26-02-1997
Enhanced solar-driven water splitting performance using oxygen vacancy rich ZnO photoanodes
Publisher: Elsevier BV
Date: 08-2023
Nonlinear Distortion Generated By Dispersive Transmission Of Chirped Intensity-modulated Signals
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-1991
DOI: 10.1109/68.93886
Crosstalk Caused By Nonideal Output Filters In Wdm Lightwave Systems
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2000
DOI: 10.1109/68.868019
Annealing of ZnS nanocrystals grown by colloidal synthesis
Publisher: Elsevier BV
Date: 08-2007
Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 06-2003
Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Publisher: American Physical Society (APS)
Date: 06-07-2015
Influence of the surface morphology on the yellow and edge emissions in wurtzite GaN
Publisher: AIP Publishing
Date: 21-12-1998
DOI: 10.1063/1.122863
Abstract: In this letter we examine an influence of surface morphology on yellow and edge emissions in wurtzite phase GaN. Our cathodoluminescence measurements show that the yellow emission does not correlate with the surface morphology, but simultaneously the “edge” emission shows very strong spatial fluctuations. The observed effect is attributed to granular structures in GaN films and enhancement of the yellow emission in the interface region.
Dislocation-induced changes in quantum dots: Step alignment and radiative emission
Publisher: AIP Publishing
Date: 19-04-1999
DOI: 10.1063/1.123831
Abstract: A transition between two types of step alignment was observed in a multilayered InGaAs/GaAs quantum-dot (QD) structure. A change to larger QD sizes in smaller concentrations occurred after formation of a dislocation array. Cathodoluminescence (CL) spectra show a bimodal peak with lower energy peak enhancement when probing at lower e-beam energies. The two peaks separate as a result of QD interdiffusion. CL imaging and cross-sectional transmission electron microscopy showed contrast from a dislocation array formed at the interface between GaAs and the first InGaAs QD layer. Strong QD emission in the near infrared (800–1100 nm) was obtained despite the presence of dislocations.
X-ray microanalysis of insulators in a variable pressure environment
Publisher: Oxford University Press (OUP)
Date: 08-2002
EBSD and XRM of Phases in Vacuum Cast Composite Alloys
Publisher: Oxford University Press (OUP)
Date: 08-2005
Patterned growth and cathodoluminescence of conical boron nitride nanorods
Publisher: AIP Publishing
Date: 27-02-2006
DOI: 10.1063/1.2179144
Abstract: We demonstrate a simple and effective approach for growing large-scale, high-density, and well-patterned conical boron nitride nanorods. A catalyst layer of Fe(NO3)3 was patterned on a silicon substrate by using a copper grid as a mask. The nanorods were grown via annealing milled boron carbide powders at 1300°C in a flow of nitrogen gas. The as-grown nanorods exhibit uniform morphology and the catalyst pattern precisely defines the position of nanorod deposition. Cathodoluminescence (CL) spectra of the nanorods show two broad emission bands centered at 3.75 and 1.85eV. Panchromatic CL images reveal clear patterned structure.
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
Publisher: AIP Publishing
Date: 28-05-2013
DOI: 10.1063/1.4807581
Abstract: We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated s les have an extremely low dislocation density (DD) of less than 5 × 104 cm−2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN s les were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures.
Cathodoluminescence from porous silicon
Publisher: IOP Publishing
Date: 12-1992
Abstract: Spatially resolved cathodoluminescence (CL) spectra were measured on porous silicon. The CL spectra showed bands and prominent peaks ranging in energy between 1.45 eV and 3 eV and were unlike the photoluminescence spectra measured on the same s les, which consisted of the well known single, broad band peaking in the visible or near infrared region. Two possible models are discussed to explain these observations.
Imaging charge trap distributions in GaN using environmental scanning electron microscopy
Publisher: AIP Publishing
Date: 28-08-2000
DOI: 10.1063/1.1290267
Abstract: We present direct experimental evidence for a field assisted component in images acquired using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. Enhanced secondary electron (SE) emission was observed in GSED images of epitaxial GaN bombarded with MeV He ions. The increase in SE emission is attributed to an electric field generated by electrons trapped at defects produced by ion implantation. The presence of nonradiative recombination centers and of trapped charge in implanted GaN was established by cathodoluminescence spectroscopy and energy dispersive x-ray spectrometry. The field assisted SE component is distinguishable from the “normal” GSED signal by characteristic pressure and temperature dependencies. The presented results demonstrate the utility of the GSED for imaging charge trap distributions in semiconductors.
Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging
Publisher: Wiley
Date: 09-09-2018
Scanning tunnelling and cathodoluminescence spectroscopy of indium nitride
Publisher: Elsevier BV
Date: 08-2004
Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films
Publisher: AIP Publishing
Date: 15-03-2001
DOI: 10.1063/1.1350619
Abstract: We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method.
Luminescent properties of wide bandgap materials at room temperature
Publisher: Wiley
Date: 19-01-2004
Doping properties of hydrogen in ZnO
Publisher: Springer Science and Business Media LLC
Date: 03-07-2012
DOI: 10.1557/JMR.2012.192
Titania precipitation in sapphire containing iron and titanium
Publisher: Springer Science and Business Media LLC
Date: 12-1991
DOI: 10.1007/BF00202577
Electrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition
Publisher: Elsevier BV
Date: 10-2020
ESEM beam current measuring device based on a planar Schottky Diode
Publisher: Oxford University Press (OUP)
Date: 08-2002
Tailoring Deep Level Surface Defects in ZnO Nanorods for High Sensitivity Ammonia Gas Sensing
Publisher: American Chemical Society (ACS)
Date: 11-11-2014
DOI: 10.1021/JP5085857
Depletion Layer Imaging Using A Gaseous Secondary Electron Detector In An Environmental Scanning Electron Microscope
Publisher: AIP Publishing
Date: 05-07-1999
DOI: 10.1063/1.124281
Abstract: We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-n junction were obtained from a Si P+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures.
Cathodoluminescence depth profiling of ion-implanted GaN
Publisher: AIP Publishing
Date: 2001
DOI: 10.1063/1.1337646
Abstract: Cathodoluminescence (CL) spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5×1019 vacancies/cm3) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050 °C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to a reduction in the extent of light absorption within the implanted layer. In this case, CL emission from the implanted layer remains completely quenched even after such an annealing. These results show that an understanding of the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption is required for a correct interpretation of luminescence spectra of GaN optically doped by keV ion implantation.
Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition
Publisher: Elsevier BV
Date: 03-1999
Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Publisher: Optica Publishing Group
Date: 06-2020
DOI: 10.1364/OME.381527
Abstract: Large reflection losses at interfaces in light-emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the light extraction efficiency from planar high refractive index semiconductor surfaces. This emission enhancement in Au NP-coated ZnO is widely attributed to involvement of a green (∼ 2.5 eV) deep level ZnO defect exciting localized surface plasmons in the NPs. In this work, we achieve a 6 times enhancement of the ultra-violet excitonic emission in ZnO nanorods coated with 5 nm Au NPs without the aid of ZnO defects. Cathodoluminescence (CL) and photoluminescence (PL) spectroscopy revealed that the increased UV emission is due to the formation of an additional fast excitonic relaxation pathway. Concurrent CL-PL measurements ruled out the presence of charge transfer mechanism in the emission enhancement process. While time-resolved PL confirmed the existence of a new excitonic recombination channel that is attributed to exciton relaxation via the excitation of rapid non-radiative Au interband transitions that increases the UV spontaneous emission rate. Our results establish that ZnO defect levels ∼ 2.5 eV are not required to facilitate Au NP induced enhancement of the ZnO UV emission.
Bandgap narrowing and hole self-trapping reduction in Ga2O3 by Bi2O3 alloying
Publisher: Elsevier BV
Date: 10-2023
Energy transfer to Er 3+ ions in silicon‐rich‐silicon oxide: efficiency limitations
Publisher: Wiley
Date: 19-01-2004
Electron Beam Current Loss at the High Vacuum High Pressure Boundary in the Environmental Scanning Electron Microscope
Publisher: Oxford University Press (OUP)
Date: 09-2001
DOI: 10.1007/S10005-001-0008-0
Abstract: A significant loss in electron probe current can occur before the electron beam enters the specimen chamber of an environmental scanning electron microscope (ESEM). This loss results from electron scattering in a gaseous jet formed inside and downstream (above) the pressure-limiting aperture (PLA), which separates the high-pressure and high-vacuum regions of the microscope. The electron beam loss above the PLA has been calculated for three different ESEMs, each with a different PLA geometry: an ElectroScan E3, a Philips XL30 ESEM, and a prototype instrument. The mass thickness of gas above the PLA in each case has been determined by Monte Carlo simulation of the gas density variation in the gas jet. It has been found that the PLA configurations used in the commercial instruments produce considerable loss in the electron probe current that dramatically degrades their performance at high chamber pressure and low accelerating voltage. These detrimental effects are minimized in the prototype instrument, which has an optimized thin-foil PLA design.
Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
Publisher: IOP Publishing
Date: 20-01-2006
Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system
Publisher: IOP Publishing
Date: 03-05-2001
Kinetics of charge carrier recombination in β- Ga2 O3 crystals
Publisher: American Physical Society (APS)
Date: 29-10-2018
Cathodoluminescence inhomogeneity in ZnO nanorods
Publisher: AIP Publishing
Date: 15-12-2008
DOI: 10.1063/1.3046722
Abstract: Luminescence properties of vertically aligned, crystalline ZnO nanorods are studied by cathodoluminescence (CL) spectroscopy and microscopy. Results show that luminescence characteristics vary dramatically with location on the nanorod as well as CL excitation depth. CL inhomogeneity is observed between the nanorod tip and sidewalls, accompanied by a variation in the chemical environment of surface oxygen ions as probed by photoemission spectroscopy. Our findings demonstrate that CL can provide useful information on the local optical properties of nanostructured materials, which is simply beyond the capability of other methods.
Dynamic surface site activation: A rate limiting process in electron beam induced etching
Publisher: American Chemical Society (ACS)
Date: 07-08-2013
DOI: 10.1021/AM402083N
Abstract: We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE.
Type I and type II alignment of the light hole band in In0.15 Ga0.85 As/GaAs and in In0.15 Ga0.85 As/Al0.15 Ga0.85 As strained quantum wells
Publisher: Springer Science and Business Media LLC
Date: 08-1997
Mechanical properties of As-grown and ion-beam-modified GaN films
Publisher: Springer Science and Business Media LLC
Date: 2001
Abstract: The deformation behavior of as-grown and ion-beam-modified wurtzite GaN films is studied by a nanoindentation with a spherical indenter. Atomic force microscopy (AFM) and cathodoluminescence are used to characterize the deformation mode. No systematic dependence of the mechanical properties on the film thickness ( at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Results strongly suggest that (i) slip is the major contributor to the plastic deformatio of crystalline GaN and (ii) slip nucleation (rater than a phae transformation) is responsible for “pop-in” events observed during loading. Indentation with an ∼ 4.2 μm radius spherical indenter at maximum loads up to 900 mN does not produce any cracking visible by AFM in crystalline GaN. Instead, under such loads, indentation results in a pronounced elevation of the material around the impression. Implantation disorder dramatically changes the deformation behaviour of GaN. In particular, implanation-produced defects in crystalline GaN syppress (i) “pop-in” events during loading, (ii) slip bands observed by AFM, and (iii) the plastic component of deformation. GaN amorphized by in bombardment exhibits plastic flow even for very low loads. The values of hardness and elastic modulus of amorphous GaN are dramatically reduced compared to those of as-grown GaN.
Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Publisher: arXiv
Date: 2015
A Mechanism for Mg Acceptor Activation in GaN by Low Energy Electron Beam Irradiation
Publisher: Oxford University Press (OUP)
Date: 07-2010
DOI: 10.1017/S1431927610062793
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Numerical-simulation Of Clipping-induced Distortion In Analog Lightwave Systems
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-1991
DOI: 10.1109/68.118038
Monocrystalline ZnO films grown by atomic layer epitaxy – growth and characterization
Publisher: Wiley
Date: 03-2004
Micro‐analysis of light emission properties of GaN‐based laser diodes
Publisher: Wiley
Date: 06-2007
Spatial inhomogeneity of donor bound exciton emission from ZnO nanostructures grown on Si
Publisher: IOP Publishing
Date: 03-06-2009
DOI: 10.1088/0957-4484/20/25/255703
Abstract: We report low temperature cathodoluminescence spectroscopy measurements of the band edge emission from ZnO nanostructures grown by vapour phase transport on Si. A range of donor bound exciton emission lines are found and the Al-related emission at 3.3605 eV in particular shows a marked inhomogeneity in its distribution throughout the s le. Increased 3.3605 eV emission is seen at a range of locations in nanorods and nanosheets where different nanostructures cross or coalesce, suggesting aggregation of Al donors in ZnO in regions of crystal structure disruption. However, localized crystal structure disruption appears to be a necessary rather than a sufficient condition for Al aggregation, since increased 3.3605 eV emission is seen only in such regions, but not all such regions show increased emission, implying that the microscopic nature of such regions is important in determining Al aggregation. Supporting data are presented from well-aligned, non-crossing, nanorods on a-sapphire.
Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride
Publisher: Elsevier BV
Date: 2011
Dopants and Impurity-Induced Defects in ZnO
Publisher: WORLD SCIENTIFIC
Date: 26-08-2021
Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires
Publisher: Elsevier BV
Date: 10-2017
Electron irradiation induced outgrowths from quartz
Publisher: AIP Publishing
Date: 15-04-1995
DOI: 10.1063/1.359499
Abstract: The irradiation of natural and ultrapure synthetic crystalline quartz by a stationary electron beam produces surface outgrowths, which have been analyzed using scanning electron microscopy, atomic force microscopy, cathodoluminescence spectroscopy, and microscopy. Oxygen enrichment of the quartz surface occurs due to electromigration resulting from the trapped charge induced electric field. It is proposed that the accumulated oxygen is incorporated into the quartz surface structure as peroxy linkages, the formation of which results in the permanent volume increase observed as amorphous outgrowths on crystalline quartz. A cathodoluminescence emission at 2.3 eV localized on the outgrowths, is attributed to an intrinsic process.
Photophysics of Point Defects in ZnO Nanoparticles
Publisher: Wiley
Date: 13-02-2015
Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD
Publisher: Elsevier BV
Date: 03-2006
A Comparison of the Mechanical Properties and the Impact of Contact Induced Damage in a- and c- Axis ZnO Single Crystals
Publisher: Springer Science and Business Media LLC
Date: 2006
Abstract: Nanoindentation studies were conducted on a-axis oriented ZnO single crystals. The mechanical properties and deformation mechanisms were monitored and compared to previously determined data from c -axis material. Hardness and modulus values reveal that a -axis ZnO is significantly softer than c -axis material (measured hardness of 2 ± 0.2 GPa) and behaves much more plastically. Additionally, the influence of contact induced damage upon the defect structure of a -axis material was also examined using cathodoluminescence spectroscopy and monochromatic imaging to monitor the luminescence from indent sites. Deformation directly under the indent site enhanced the occurrence of red defect luminescence, and was attributed to a native defect in ZnO that has a higher formation energy than the defects responsible for the green and yellow visible defect bands, which were present in the ZnO during growth and were found to cluster to the indent site during annealing.
An Electron-microscopy Study Of Exsolved Phases In Natural Black Australian Sapphire
Publisher: Elsevier BV
Date: 1984
Monte Carlo Modeling Of Cathodoluminescence Generation Using Electron Energy Loss Curves
Publisher: Wiley
Date: 09-1998
X-ray mapping and electron back scattered diffraction of phases in welded materials
Publisher: Oxford University Press (OUP)
Date: 08-2004
DOI: 10.1017/S1431927604883843
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Highly Luminescent MgZnO/ZnO Multiple Quantum Wells for Photonics Devices
Publisher: American Chemical Society (ACS)
Date: 04-04-2019
Atomic layer deposition of thin films of ZnSe—structural and optical characterization
Publisher: Elsevier BV
Date: 2004
In-Situ Investigation of Discolouration Processes Between Historic Oil Paint Pigments
Publisher: Springer Science and Business Media LLC
Date: 28-04-2006
A study into the impact of sapphire substrate orientation on the properties of nominally-undoped β-Ga2O3 thin films grown by pulsed laser deposition
Publisher: SPIE
Date: 23-03-2017
DOI: 10.1117/12.2262757
Profiling of light emission of GaN‐based laser diodes with cathodoluminescence
Publisher: Wiley
Date: 05-2006
Shallow carrier traps in hydrothermal ZnO crystals
Publisher: IOP Publishing
Date: 26-08-2014
Absorption correction of Fe La,β emission from iron oxides
Publisher: Oxford University Press (OUP)
Date: 08-2002
Chemical origin of the yellow luminescence in GaN
Publisher: AIP Publishing
Date: 17-04-2002
DOI: 10.1063/1.1467605
Abstract: The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed.
The Role of Induced Contrast in Images Obtained Using the Environmental Scanning Electron Microscope
Publisher: Wiley
Date: 11-2000
Abstract: Generation of contrast in images obtained using the environmental scanning electron microscope (ESEM) is explained by interpretation of images acquired using the gaseous secondary electron detector (GSED), ion current, and the Everhart-Thornley detector. We present a previously unreported contrast component in GSED and ion current images attributed to signal induction by changes in the concentration of positive ions in the ESEM chamber during image acquisition. Changes in positive ion concentration are caused by changes in electron emission from the s le during image acquisition and by a discrepancy between the drift velocities of negative and positive charge carriers in the imaging gas. The proposed signal generation mechanism is used to explain contrast reversal in images produced using the GSED and ion current signals and accounts for discrepancies in contrast observed, under some conditions, in these types of images. Combined with existing models of signal generation in the ESEM, the proposed model provides a basis for correct interpretation of ESEM images.
Direct Comparison of Various Gaseous Secondary Electron Detectors in the Variable Pressure Scanning Electron Microscope
Publisher: Oxford University Press (OUP)
Date: 08-2005
Importance of instrumental and experimental factors on the interpretation of cathodoluminescence data from wide band cap materials
Publisher: Springer Berlin Heidelberg
Date: 2000
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Publisher: IOP Publishing
Date: 14-03-2008
Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Publisher: Springer Science and Business Media LLC
Date: 13-02-2020
DOI: 10.1038/S41598-020-59326-3
Abstract: Recently, metal nanoparticle surface coatings have been found to significantly enhance the ultra-violet luminescence intensity from ZnO, providing a viable means to mitigate optical losses and improve LED performance. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal nanoparticles can directly couple to excitons in the semiconductor increasing their spontaneous emission rate, the exact mechanisms involved in this phenomenon are currently not fully understood. In this work, LSP-exciton coupling in bulk and nanostructured ZnO coated with a 2 nm Al nanoparticle layer is investigated using correlative photoluminescence and depth-resolved cathodoluminescence and time-resolved photoluminescence spectroscopy. Temperature-resolved cathodoluminescence and photoluminescence measurements from 10 K to 250 K show free exciton (FX) emission enhancement factors up to 12x at 80 K, and reveal that the FX couple more efficiently to the LSPs compared to the localized donor-bound excitons. A strong polarization dependence between the LSPs and FX is observed where FX transitions are more strongly enhanced when polarized in the same direction as the electric field of the incident excitation, which is different for laser and electron beam sources. This result indicates that selective enhancement of the excitonic emission peaks in the ZnO coated with Al nanoparticles can be achieved by choosing the appropriate ZnO substrate orientation.
Physical structure and optical properties of Co-doped ZnO nanoparticles prepared by co-precipitation
Publisher: Springer Science and Business Media LLC
Date: 06-10-2013
Electron imaging of dielectrics under simultaneous electron–ion irradiation
Publisher: AIP Publishing
Date: 28-03-2002
DOI: 10.1063/1.1448875
Abstract: We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a defocused flux of soft-landing positive ions, secondary electron (SE) images can contain contrast due to lateral variations in (i) changes in the SE yield caused by subsurface trapped charge and (ii) the SE-ion recombination rate. Both contrast mechanisms can provide information on microscopic variations in dielectric properties. We present a model of SE contrast formation that accounts for localized charging and the effects of gas ions on the SE emission process, emitted electrons above the s le surface, and subsurface trapped charge. The model explains the ion flux dependence of charge-induced SE contrast, an increase in the sensitivity to surface contrast observed in SE images of charged dielectrics, and yields procedures for identification of contrast produced by localized s le charging.
Electric fields produced by electron irradiation of insulators in a low vacuum environment
Publisher: AIP Publishing
Date: 28-03-2002
DOI: 10.1063/1.1448876
Abstract: We report on the properties of electric fields generated as a result of electron irradiation of dielectrics in a low vacuum scanning electron microscope. In idual field components produced by (i) ionized gas molecules located outside the s le surface and (ii) subsurface trapped charge were detected by measurements of changes in (i) primary electron landing energy and (ii) secondary electron (SE) emission current, respectively. The results provide experimental evidence for a recently proposed model of field-enhanced SE emission from electron irradiated insulators in a low vacuum environment [Toth et al., J. Appl. Phys. 91, 4479 (2002)]. Errors introduced into x-ray microanalysis by the electric fields generated by ionized gas molecules can be alleviated by minimizing the steady state ion concentration by the provision of efficient ion neutralization routes. It is demonstrated how this can be achieved using simple s le–electrode geometries.
Cathodoluminescence Microcharacterisation of Silicon Dioxide Polymorphs
Publisher: Springer Berlin Heidelberg
Date: 2000
Probing carrier behaviour at the nanoscale in gallium nitride using low voltage cathodoluminescence
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S1431927606069352
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces
Publisher: Wiley
Date: 2006
Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
Publisher: Springer Science and Business Media LLC
Date: 1998
DOI: 10.1557/S109257830000123X
Abstract: Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the s le morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.
A facile method for bright, colour-tunable light-emitting diodes based on Ga-doped ZnO nanorods
Publisher: IOP Publishing
Date: 17-08-2018
Abstract: Bottom-up fabrication of nanowire-based devices is highly attractive for oxide photonic devices because of high light extraction efficiency however, unsatisfactory electrical injection into ZnO and poor carrier transport properties of nanowires severely limit their practical applications. Here, we demonstrate that ZnO nanorods doped with Ga donors by in situ dopant incorporation during vapour-solid growth exhibit superior optoelectronic properties that exceed those currently synthesised by chemical vapour deposition, and accordingly can be electrically integrated into Si-based photonic devices. Significantly, the doping method was found to improve the nanorod quality by decreasing the concentration of point defects. Light-emitting diodes (LEDs) fabricated from the Ga-doped ZnO nanorod -Si heterojunction display bright and colour-tunable electroluminescence (EL). These nanorod LEDs possess a dramatically enhanced performance and an order of magnitude higher EL compared with equivalent devices fabricated with undoped nanorods. These results point to an effective route for large-scale fabrication of conductive, single-crystalline ZnO nanorods for photonic and optoelectronic applications.
Electron backscatter diffraction characterization of plasma immersion ion implantation effects in stainless steel
Publisher: Elsevier BV
Date: 2013
Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Publisher: arXiv
Date: 2019
Cathodoluminescence microanalysis of electron irradiation damage in wide band gap materials
Publisher: Springer Science and Business Media LLC
Date: 1999
DOI: 10.1557/PROC-540-43
Abstract: Cathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H + ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.
Electron beam induced impurity electro-migration in unintentionally doped GaN
Publisher: Springer Science and Business Media LLC
Date: 1999
Abstract: Electron beam induced electromigration of O N + and H + impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (V Ga -O N ) 2 - model of yellow luminescence in GaN with low Si content (ii) confirm the roles of 0 in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of O N + and hydrogenated gallium vacancies in a blue emission in autodoped GaN.
Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays
Publisher: American Chemical Society (ACS)
Date: 26-05-2010
DOI: 10.1021/AM100284V
Abstract: The synthesis of hexagonal ring-shaped structures of zinc oxide using nanosphere lithography and metal/metal oxide sputtering is demonstrated. This synthesis exploits the surface re-emission of zinc oxide to deposit material in regions lying out of the line-of-sight of the sputtering source. These rings can nucleate the hydrothermal growth of zinc oxide crystals. Control over the growth could be exercised by varying growth solution concentration or temperature or by applying an external potential.
Enhancement of excitonic and defect-related luminescence in neutron transmutation doped β-Ga2 O3
Publisher: American Physical Society (APS)
Date: 30-11-2022
Gaseous scintillation detection and amplification in variable pressure scanning electron microscopy
Publisher: AIP Publishing
Date: 10-2006
DOI: 10.1063/1.2355539
Abstract: This work investigates the generation and detection of gaseous scintillation signals produced in variable pressure scanning electron microscopy through electron-gas molecule excitation reactions. Here a gaseous scintillation detection (GSD) system is developed to efficiently detect photons produced via excitation reactions in electron cascades. Images acquired using GSD are compared to those obtained using conventional gaseous secondary electron detection (GSED) and demonstrate that images rich in secondary electron (SE) contrast can be achieved using the gaseous scintillation signal. A theoretical model, based on existing Townsend theories, is developed. It describes the production and lification of photon signals generated by cascading SEs, high energy backscattered electrons, and primary beam electrons. Photon lification (the total number of photons produced per s le emissive electron) is then investigated and compared to conventional electronic lification over a wide range of microscope operating parameters, scintillating imaging gases, and photon collection geometries. These studies revealed that argon gas exhibited the largest GSD gain, followed by nitrogen then water vapor, exactly opposite to the trend observed for electron lification data. It was also found that detected scintillation signals exhibit larger SE signal-to-background levels compared to those of conventional electronic signals detected via GSED. Finally, dragging the electron cascade towards the light pipe assemblage of GSD systems, or electrostatic focusing, dramatically increases the collection efficiency of photons.
Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II–VI compounds
Publisher: Elsevier BV
Date: 10-2004
Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system
Publisher: IOP Publishing
Date: 2011
Electroluminescence from isolated defects in zinc oxide, towards electrically triggered single photon sources at room temperature
Publisher: arXiv
Date: 2015
Luminescent properties of ZnO structures grown with a vapour transport method
Publisher: Elsevier BV
Date: 05-2010
Origin of white color light emission in ALE-grown ZnSe
Publisher: Elsevier BV
Date: 05-2003
Red luminescence in H-doped
β − G
Publisher:
American Physical Society (APS)
Date:
03-08-2020
Publisher: American Physical Society (APS)
Date: 03-08-2020
Synthesis and characterization of doped and undoped ZnO nanostructures
Publisher: Oxford University Press (OUP)
Date: 14-07-2006
DOI: 10.1017/S1431927606060430
Abstract: Zinc oxide (ZnO) nanoparticles have been produced using precipitation methods from ethanolic solution. Rare-earth metal doping was performed, and the effect of lithium codoping on the luminescence properties of the rare-earth doped products was assessed. The resulting particles were characterized using cathodoluminescence and scanning electron microscopy. It was found that lithium significantly enhanced the cathodoluminescence signal from the rare-earth ions, which has been attributed to the increased integration of the rare-earth ions into the ZnO structure. The nanophase ZnO products were also annealed in argon, hydrogen, and oxygen, with hydrogen being the most successful for removing the broad defect emission present in as-grown s les and enhancing the ZnO near band edge emission.
Chemical structure and optical signatures of nitrogen acceptors in MgZnO
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0TC00826E
Abstract: Nitrogen can be incorporated into MgZnO using low-temperature deposition. Donor–acceptor pair emission from N-doped MgZnO is attributed to molecular N 2 .
Optimization of thinning rates in an argon ion beam thinner
Publisher: AIP Publishing
Date: 07-1991
DOI: 10.1063/1.1142381
Abstract: A simple and inexpensive ‘‘feedback’’ circuit has been devised that regulates the gas flow in an argon ion gun system and thus optimizes the specimen thinning rate. The circuit is easily adapted to suit a broad range of similar applications.
Cathodoluminescence properties of zinc oxide nanoparticles
Publisher: Wiley
Date: 2004
Comparison of low voltage cathodoluminescent phosphors
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S1431927606069364
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
A system for supplying constant electrical power for postprocessing tin-doped indium oxide films
Publisher: AIP Publishing
Date: 07-2008
DOI: 10.1063/1.2956976
Abstract: Annealing tin doped indium oxide (ITO) thin films by self-heating shows potential for reducing the crystallization temperature required to optimize the optical and electrical properties of the films. It also shows promise as a cost effective method of studying the heat treatment process in situ. A computer based solution was developed to allow for a precise control over the annealing process. To anneal at a fixed temperature, a feedback loop senses changes in the resistance of the s le and adjusts the current across the load accordingly to ensure constant delivery of power to an ITO film.
Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy
Publisher: Elsevier BV
Date: 05-2004
Nanostructure Fabrication by Ultra-High-Resolution Environmental Scanning Electron Microscopy
Publisher: American Chemical Society (ACS)
Date: 11-01-2007
DOI: 10.1021/NL062848C
Abstract: Electron beam induced deposition (EBID) is a maskless nanofabrication technique capable of surpassing the resolution limits of resist-based lithography. However, EBID fabrication of functional nanostructures is limited by beam spread in bulk substrates, substrate charging, and delocalized film growth around deposits. Here, we overcome these problems by using environmental scanning electron microscopy (ESEM) to perform EBID and etching while eliminating charging artifacts at the nanoscale. Nanostructure morphology is tailored by slimming of deposits by ESEM imaging in the presence of a gaseous etch precursor and by pre-etching small features into a deposit (using a stationary or a scanned electron beam) prior to a final imaging process. The utility of this process is demonstrated by slimming of nanowires deposited by EBID, by the fabrication of gaps (between 4 and 7 nm wide) in the wires, and by the removal of thin films surrounding such nanowires. ESEM imaging provides a direct view of the slimming process, yielding process resolution that is limited by ESEM image resolution ( approximately 1 nm) and surface roughening occurring during etching.
14 Cathodoluminescence microanalysis of ZnO nanowires
Publisher: Elsevier
Date: 2015
Doping-induced Ti3+ state and oxygen vacancies in TiO2: A single-chip combinatorial investigation
Publisher: Elsevier BV
Date: 10-2023
A DSC study of the effect of lead pigments on the drying of cold pressed linseed oil
Publisher: Springer Science and Business Media LLC
Date: 03-2005
Fe in III–V and II–VI semiconductors
Publisher: Wiley
Date: 03-2008
Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration
Publisher: IEEE
Date: 2005
High bandwidth secondary electron detection in variable pressure scanning electron microscopy using a Frisch grid
Publisher: IOP Publishing
Date: 14-02-2008
Nanoindentation of epitaxial GaN films
Publisher: AIP Publishing
Date: 20-11-2000
DOI: 10.1063/1.1328047
Abstract: Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the “pop-in” events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.
Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures
Publisher: Wiley
Date: 11-2001
DOI: 10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3
Correlation between small polaron tunneling relaxation and donor ionization in Ga2O3
Publisher: AIP Publishing
Date: 25-04-2022
DOI: 10.1063/5.0086376
Abstract: Pulsed laser deposition is employed to fabricate as-grown amorphous and post-growth annealed crystalline β-Ga2O3 films. The films annealed at temperatures above 600 °C are found to exhibit a pure monolithic phase with a bandgap of 4.7 eV. The thermally activated donor ionization and dielectric relaxation of these films are systematically investigated by temperature-dependent DC and AC conductivity measurements, and complex electric modulus analysis. A donor level at ∼180 meV below the conduction band edge and a small polaron tunneling (SPT) relaxation with an activation energy of ∼180 meV are observed in the as-grown amorphous Ga2O3 film but not in the monolithic β-Ga2O3 film. The SPT occurs between donor sites with its thermal relaxation of polarization being associated with the thermal ionization of the donor state. Thermal annealing of the amorphous films removes the 180 meV donors as well the corresponding SPT relaxation.
Plasma Immersion Ion Implantation of Stainless Steel 316
Publisher: Oxford University Press (OUP)
Date: 07-2011
DOI: 10.1017/S1431927611010300
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate
Publisher: AIP Publishing
Date: 11-1996
DOI: 10.1063/1.363546
Abstract: Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well (SQWL) PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately T∼110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR.
Correlation between the structural and optical properties of Mn-doped ZnO nanoparticles
Publisher: Elsevier BV
Date: 05-2012
Electron beam induced impurity electro-migration in unintentionally doped GaN
Publisher: Springer Science and Business Media LLC
Date: 1998
DOI: 10.1557/S1092578300002556
Abstract: Electron beam induced electromigration of O N + and H + impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (V Ga −O N ) 2− model of yellow luminescence in GaN with low Si content 1 , (iii) confirm the roles of O in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of O N + and hydrogenated gallium vacancies in a blue emission in autodoped GaN.
A method to measure the effective gas path length in the environmental or variable pressure scanning electron microscope
Publisher: Wiley
Date: 07-2002
Abstract: A simple method is described to determine the effective gas path length when incident electrons scatter in the gas above the specimen. This method is based on the measurement of a characteristic x-ray line emitted from a region close to the incident beam. From various experimental measurements performed on various microscopes, it is shown that the effective gas path length may increase with the chamber pressure and that it is also often dependent of the type of x-ray bullet.
Distribution of visible luminescence centers in hydrogen-doped ZnO
Publisher: Springer Science and Business Media LLC
Date: 23-11-2011
DOI: 10.1557/JMR.2011.383
Wdm Lightwave System Crosstalk By Optical Kerr Effect With Polarisation-dependent Loss
Publisher: Institution of Engineering and Technology (IET)
Date: 1999
DOI: 10.1049/EL:19991163
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Publisher: Springer Science and Business Media LLC
Date: 07-08-2017
DOI: 10.1038/S41598-017-07568-Z
Abstract: We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al 2 O 3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H -band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
Optical emission due to ionic displacements in alkaline earth titanates
Publisher: Elsevier BV
Date: 02-2001
Nitrogen incorporation in ZnO nanowires using N2O dopant gas
Publisher: Elsevier BV
Date: 05-2013
Erratum: Visualization of vortex motion in FeAs-based BaFe 1.9 Ni0.1 As2 single crystal by means of magneto-optical imaging (Journal of Applied Physics (2011) 109 (07E142))
Publisher: AIP Publishing
Date: 15-05-2011
DOI: 10.1063/1.3592769
Cathodoluminescence as a method of extracting detailed information from nanophotonics systems: A study of silicon nanocrystals
Publisher: SPIE
Date: 28-12-2006
DOI: 10.1117/12.638662
Multi-detector x-ray mapping and generation of correction factor images for problem solving
Publisher: Oxford University Press (OUP)
Date: 08-2008
DOI: 10.1017/S1431927608084043
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008
Doping-level-dependent optical properties of GaN:Mn
Publisher: AIP Publishing
Date: 31-05-2004
DOI: 10.1063/1.1757641
Nanocapacitive circuit elements
Publisher: American Chemical Society (ACS)
Date: 18-07-2008
DOI: 10.1021/NN800053X
Abstract: "Natural" lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The "nanocapacitors" possessed a capacitance of approximately 1 x 10(-16) F and were observed to hold charge for over an hour. Our results indicate that fabricating nanostructures using natural lithography may provide a viable alternative for future nanoelectronic devices.
Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane
Publisher: AIP Publishing
Date: 19-11-2012
DOI: 10.1063/1.4767521
Abstract: Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2 at room temperature.
Surface polarity control in ZnO films deposited by pulsed laser deposition
Publisher: Elsevier BV
Date: 07-2019
A method to improve the light emission efficiency of Mg-doped GaN
Publisher: IOP Publishing
Date: 20-11-2003
Two-dimensional confinement of excitons at the interface in nonpolar MgZnO/ZnO heterostructures
Publisher: American Physical Society (APS)
Date: 15-03-2022
Coalescence of ZnO nanowires grown from monodisperse Au nanoparticles
Publisher: Royal Society of Chemistry (RSC)
Date: 2015
DOI: 10.1039/C5CE00579E
Abstract: The coalescence of ZnO nanowires grown from monodisperse Au nanoparticles was investigated by correlative imaging techniques and modelling.
Clipping Distortion In Lightwave Catv Systems - Models, Simulations, And Measurements
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1993
DOI: 10.1109/50.210579
Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
Publisher: AIP Publishing
Date: 15-10-2003
DOI: 10.1063/1.1619210
Abstract: The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following the LEEBI treatment, the ubiquitous shallow donor–acceptor-pair emission at 3.27 eV decreased, while a deeper DAP emission at ∼3.1 eV dramatically increased in intensity, and a broad yellow luminescence band centered at 2.2 eV evolved. The results clearly indicate that the centers involved in the 3.27 eV transition are not stable during irradiation by low-energy electrons. Further, we report that the LEEBI-treatment not only dissociates neutral Mg-H complexes as intended, but simultaneously dissociates other hydrogenated defect complexes, giving rise to additional radiative recombination channels.
Influence of n‐type doping on light emission properties of GaN layers and GaN‐based quantum well structures
Publisher: Wiley
Date: 02-2005
Cathodoluminescence study of GaN and GaN:Si on sapphire
Publisher: SPIE
Date: 09-02-2006
DOI: 10.1117/12.646837
Single photon emission from ZnO nanoparticles
Publisher: arXiv
Date: 2014
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer
Publisher: Elsevier BV
Date: 06-2001
Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
Publisher: AIP Publishing
Date: 16-10-2006
DOI: 10.1063/1.2357881
Abstract: The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1kV they resolve in idual threading dislocations on the s le surface at low temperature (5K), which appear as correlated dark spots. Analysis of CL intensity profiles across in idual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5K, an exciton diffusion length of 62±28nm was found for GaN:Si (∼3×1018cm−3) compared with 81±20nm for a nominally undoped n-type GaN (∼1×1016cm−3).
Identification of bound exciton complexes in ZnO
Publisher: Wiley
Date: 10-02-2004
Cathodoluminescence microcharacterization of the defect structure of quartz
Publisher: American Physical Society (APS)
Date: 08-1995
Defect Compensation in Nitrogen-Doped β-Ga2O3 Nanowires: Implications for Bipolar Nanoscale Devices
Publisher: American Chemical Society (ACS)
Date: 28-04-2022
Lanthanide-doped W 18 O 49 nanowires: Synthesis, structure and optical properties
Publisher: Elsevier BV
Date: 03-2018
Efficient multi-coloured Li-doped ZnO thin films fabricated by spray pyrolysis
Publisher: Elsevier BV
Date: 2017
Formation and dissociation of hydrogen-related defect centres in Mg-doped GaN
Publisher: Springer Science and Business Media LLC
Date: 2004
Abstract: Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20–30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (V N -H) complex. Due to the small dissociation energy ( eV) of the (V N -H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100–200 meV, which was tentatively attributed to a V N -related center. The blue band (2.8–3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.
Diffusion length of carriers and excitons in GaN—influence of epilayer microstructure
Publisher: Elsevier BV
Date: 02-2004
X-ray Mapping using Multiple EDS and WDS Detectors
Publisher: Oxford University Press (OUP)
Date: 08-2005
Cathodoluminescence Microcharacterization of the Irradiation Sensitive Defect Structure of Amorphous Silicon Dioxide
Publisher: Oxford University Press (OUP)
Date: 08-1997
DOI: 10.1017/S1431927600010643
Abstract: Cathodoluminescence (CL) Microscopy (imaging) and Spectroscopy in a Scanning Electron Microscope enables high spatial resolution, high sensitivity detection of defect centers in materials. Cathodoluminescence microanalysis has been used to investigate the irradiation sensitive defect structure of Types I, II, III and IV amorphous silicon dioxide SiO 2 (quartz and silica glasses). The CL experiments were performed in a JEOL JSM 35C SEM equipped with Oxford Instruments liquid N and liquid He cryogenic stages, and an Oxford Instruments MonoCL cathodoluminescence imaging and spectral analysis system. The observed CL emissions, were excited with a stationary electron beam at normal incidence and corrected for total instrument response. The corrected CL spectra were fitted with a multiparameter Gaussian function using a non linear least squares curve fitting algorithm and were identified with particular defect structures. The CL emission from high quality pure amorphous silica and quartz glasses is dominated by intrinsic processes (associated with the host lattice). See Table 1.
Integration of Quantum Dot devices by Selective Area Epitaxy
Publisher: IEEE
Date: 2006
Time Dependent Study of the Positive Ion Current in the Environmental Scanning Electron Microscope (ESEM)
Publisher: Oxford University Press (OUP)
Date: 08-2001
DOI: 10.1017/S1431927600030014
Abstract: The Environmental Scanning Electron Microscope (ESEM) is capable of image generation in a gaseous environment at s le chamber pressures of up to 20 torr. in an ESEM, low energy secondary electrons emitted from a s le surface, by virtue of the primary electron beam, are accelerated towards the positively biased metallic ring (typically +30 to +550V) Gaseous Secondary Electron Detector (GSED). As these electrons accelerate towards the ring they undergo ionizing collisions with gas molecules producing positive ions and additional electrons known as environmental secondary electrons. The environmental electrons further ionize the gas on their way to the ring producing a cascade lification of the original signal. The lified signal induced in the ring is used to form an image. The electric field generated between the GSED ring and the grounded stage causes the positive ions produced in the cascade to drift towards the s le, effectively neutralizing negative charge build up on the surface of a non-conducting s le.
Light emission properties of GaN-based laser diode structures
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 10-2005
EBSD studies of ion implanted duplex stainless steel
Publisher: Oxford University Press (OUP)
Date: 07-2012
DOI: 10.1017/S1431927612008586
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Surface disordering and nitrogen loss in GaN under ion bombardment
Publisher: Springer Science and Business Media LLC
Date: 2000
Abstract: The damage build-up and amorphization behavior in wurtzite GaN films under a wide range of implant conditions are studied by Rutherford backscattering / channeling spectrometry, transmission electron microscopy, and cathodoluminescence spectroscopy. A strong surface peak of lattice disorder, in addition to the expected damage peak in the region of the maximum of nuclear energy loss, has been observed for all implant conditions of this study. Capping of GaN with SiO x and Si x N y layers prior to implantation does not eliminate surface disordering. This may suggest that nitrogen loss is not the main reason for the observed enhanced surface disorder, but, rather, the GaN surface acts as a strong sink for migrating point defects. However, pronounced loss of N during ion bombardment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400°C leads to complete decomposition of the near-surface layer.
Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
Publisher: Springer Science and Business Media LLC
Date: 2002
Abstract: CL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H) 0 complexes, LEEBI significantly increases the (e,Mg 0 ) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.
Study on d.c. magnetron sputter deposition of titanium aluminium nitride thin films: Effect of aluminium content on coating
Publisher: Elsevier BV
Date: 12-1996
Monet's Painting under the Microscope
Publisher: Oxford University Press (OUP)
Date: 14-03-2003
DOI: 10.1017/S1431927603030198
Abstract: An oil painting by Claude Monet, Port-Goulphar, Belle-Ile 1887 (collection of the Art Gallery of New South Wales), was examined to determine both the identity of the pigments used by the artist in this painting and his technique of mixing colors and laying paint on the canvas. The extremely complex construction of the painting was revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), and X-ray mapping (XRM) analysis of cross sections of paint flakes excised from damaged regions of Port-Goulphar, Belle-Ile . Nine different pigments were found on the painting. Many of the identified colors were modern pigments that became available only late in the 19th century as a result of scientific advances in pigment chemistry. Although similar colors were available in a natural mineral form, they lacked the vivid color of their manufactured counterparts. The use of these new synthetic metallic oxide colors by Monet accounts for the brilliance of his paintings. In addition, a separation between successive paint layers was observed in some areas of paint chip cross sections, indicating that oil-based paint was applied to paint that had dried, and consequently, Port-Goulphar, Belle-Ile was painted over a long period of time. This observation is contrary to the general perception of Monet's technique of painting freely and quickly.
Elastic Properties of Crystalline–Amorphous Core–Shell Silicon Nanowires
Publisher: American Chemical Society (ACS)
Date: 15-02-2013
DOI: 10.1021/JP309842C
Effects of strain on the valence band structure and exciton-polariton energies in ZnO
Publisher: arXiv
Date: 2013
Non-stoichiometry and non-homogeneity in InN
Publisher: Wiley
Date: 11-04-2005
Cathodoluminescence Investigation of Electron Irradiation Damage in Insulators.
Publisher: Oxford University Press (OUP)
Date: 08-1997
DOI: 10.1017/S1431927600010631
Abstract: Cathodoluminescence (CL) is the luminescent emission from a material which has been irradiated with electrons. Cathodoluminescence microanalysis (spectroscopy and microscopy) in an electron microscope complements the average defect structure information available from complementary techniques (e.g. Photoluminescence, Electron Spin Resonance spectroscopy). CL microanalysis enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure to be characterized with high spatial (lateral and depth) resolution and sensitivity. This is possible as electron beam parameters such as the beam energy, may be varied to finely control the penetration depth of the incident electrons and hence the local volume of specimen probed. Irradiation with charged and neutral energetic radiation produces defects in radiation sensitive materials. The energetic electron beam in an electron microscope may also induce defects in the specimen. Cazaux has characterized the electric field produced by electron irradiation of a insulator with a conductive surface coating
Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 09-2006
Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells
Publisher: Springer Science and Business Media LLC
Date: 2001
Abstract: We have examined multiple quantum well AlGaN/GaN structures with several quantum wells of varying widths. The structures had strain-free quantum wells and strained barriers. Strong piezoelectric fields in these structures led to a large red shift of the PL emission energies and long decay times were also observed. While the peak energies could be modelled using the effective mass approximation, the calculated free exciton radiative lifetimes were much shorter than those observed in experiments, indicating an alternative recombination mechanism, tentatively attributed to localised excitons. Cathodoluminescence depth profiling revealed an unusually small penetration range of electrons suggesting that electron-hole pairs preferentially remain within the multiple quantum well region due to the existing electric fields. Spatial fluctuations of the cathodoluminescence intensity were also observed.
Separate charge transport pathways determined by the time of flight method in bimodal polytriarylamine
Publisher: AIP Publishing
Date: 2009
DOI: 10.1063/1.3054180
Abstract: Time of flight photocurrent transient studies on thin films of bimodal polytriarylamine (PTAA) show two distinct and separate arrival times for hole transport in the same s le at a single field. The corresponding mobilities differ by two orders of magnitude, typically μfast∼10−3 cm2 V−1 s−1 and μslow∼10−5 cm2 V−1 s−1 at room temperature, and are measured parametric in electric field and temperature. The mobility data are analyzed using the correlated disorder model by Novikov, yielding a fitting parameter set. The two conduction paths are believed to come about as a result of phase segregation between the shorter and longer polymer chains with the shorter chains giving rise to the faster conduction pathways (as confirmed by results obtained for monomodal, shorter, and longer chain PTAA, by s le thickness scaling of the photocurrents and by reversal of the illuminated electrode). Separate arrival times are also obtained in a blend of the two short and long chain monomodal polymers. The phase separation within the film is inferred by the appearance of two glass transition temperatures using dynamic mechanical thermal analysis.
Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires
Publisher: Wiley
Date: 29-01-2016
X-Ray Mapping and Scatter Diagram Analysis of the Discoloring Products Resulting from the Interaction of Artist's Pigments
Publisher: Oxford University Press (OUP)
Date: 31-08-2010
DOI: 10.1017/S143192761009375X
Abstract: The discoloring interaction between the artist's pigments cadmium yellow and the copper-containing malachite, an interaction that is conjectured to cause black spotting in oil paintings of the 19th and early 20th centuries, was examined using X-ray mapping and scatter diagram analysis. The application of these coupled techniques confirmed that copper sulfide phases were produced during discoloration reaction. Scatter diagram analysis indicated that two copper sulfide stoichiometries (CuS and Cu 3 S 2 ) were present as reaction products where previously only crystalline CuS (covellite) had been identified by X-ray diffraction. The results demonstrate the potential of X-ray mapping coupled with scatter diagram analysis for the identification of both crystalline and X-ray amorphous phases produced by such complex heterogeneous interactions and their applicability to the investigation of interactions of artists' pigments.
In-situ evaluation of post growth treatments on the cathodoluminescence properties of fluorescent nano-particles in the environmental scanning electron microscope
Publisher: Oxford University Press (OUP)
Date: 08-2004
DOI: 10.1017/S143192760488721X
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy
Publisher: AIP Publishing
Date: 20-12-1999
DOI: 10.1063/1.125528
Abstract: Trace levels of Cr impurities in epitaxial GaN grown on sapphire substrates were investigated using cathodoluminescence (CL) spectroscopy. CL emissions characteristic of Cr in an octahedral crystal field were observed from β−Ga2O3 overlayers produced on GaN by post-growth thermal annealing in dry O2. Cr luminescence was also observed from the sapphire substrates, a likely source of the Cr contaminant. The presented results illustrate the use of β−Ga2O3 overlayers as high sensitivity indicators of the presence of Cr in GaN.
Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles
Publisher: Elsevier BV
Date: 12-2008
Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies
Publisher: IOP Publishing
Date: 13-09-2011
DOI: 10.1088/0957-4484/22/40/405604
Abstract: We report on an oxide-assisted growth technique for silica nanowires which allows tuning the growth from surface-matched nanowires to free-standing morphologies based on growth control by Ti in the role of a catalyst and surfactant. Using an adjustable Ti concentration, we grew silica nanowires with lengths ranging from 100 nm up to several millimetres whose defect chemistry was analysed by electron microscopy tools, monochromatic cathodoluminescence imaging and time resolved photoluminescence spectroscopy. The knowledge of the luminescence properties and the related defect occurrence along with their spatial distribution is pivotal for advancing silica nanowire growth in order to realize successful device designs based on self-assembled Si/SiO(x) nanostructures. We demonstrate a core-shell structure of the grown nanowires with a highly luminescent 150 nm thick shell and outstandingly fast decaying dynamics (≈1 ns) for glass-like materials. The conjunction of the observed efficient and stable luminescences with their attributed decaying behaviours suggests applications for silica nanowires such as active and passive optical interconnectors and white light phosphors. The identification of a time domain difference for the spectral regime from 2.3 to 3.3 eV, within the confined spatial dimensions of a single nanowire, is very promising for future, e.g. data transmission applications, employing silica nanowires which exhibit achievable compatibility with commonly applied silicon-based electronics. A qualitative growth model based on silica particle diffusion and Ti-assisted seed formation is developed for the various types of segregated silica nanowires which extends commonly assumed oxide-assisted growth mechanisms.
Design, Construction and Applications of a Low Temperature (5 K) Combined Scanning Cathodoluminescence and WDS X-ray Spectroscopy and Imaging System
Publisher: Oxford University Press (OUP)
Date: 08-1997
DOI: 10.1017/S143192760001223X
Abstract: Recently there has been a renaissance in scanning cathodoluminescence (CL) microscopy and microanalysis primarily brought about by the analytical demands of the semiconductor industry in addition to significant advances in photonics technology (high efficiency PMTs, CCDs and CL collectors). The strength of the CL analysis technique lies in its ability to provide high spatial (lateral and depth) resolution concentration and distribution information about: (i) the chemical state (identity, oxidation state and co-ordination) of trace level impurities and (ii) point / extended structural defects (vacancies and dislocations) in both semiconductors and insulators. For many materials, interpretation of CL spectra and images measured at low temperature (5 K) is quite straightforward. However CL generation via recombination of electron / hole pairs is a competitive process. Consequently in some specimens the measured CL intensity is not directly proportional to the concentration of the particular luminescent center but relates to the concentration of other radiative or non-radiative centers. In these cases it is difficult to decide whether contrast in the CL image is due to variation in the concentration of the radiative center or the competitive center.
Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods
Publisher: Elsevier BV
Date: 12-2015
Electroluminescence from Localized Defects in Zinc Oxide: Toward Electrically Driven Single Photon Sources at Room Temperature
Publisher: American Chemical Society (ACS)
Date: 09-03-2015
Abstract: Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography, and quantum communications. However, the majority of room temperature emitters to date are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically driven light emission from localized defects in zinc oxide (ZnO) nanoparticles and thin films. The devices emit in the red spectral range and show excellent rectifying behavior. The emission is stable over an extensive period of time, providing an important prerequisite for practical devices. Our results open possibilities for building new ZnO-based quantum integrated devices that incorporate solid-state single photon sources for quantum information technologies.
Controlling the visible luminescence in hydrothermal ZnO
Publisher: Elsevier BV
Date: 10-2014
Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaN
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 08-1998
Defect Clustering and Color in Fe,Ti: α‐Al2 O3
Publisher: Wiley
Date: 02-1994
Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers
Publisher: Elsevier BV
Date: 05-2000
Origin of Ultrafast Component of Photoluminescence Decay in Nanostructures Doped with Transition Metal or Rare-Earth Ions
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 2005
The Effects of Space Charge on Contrast in Images Obtained Using the Environmental Scanning Electron Microscope
Publisher: Wiley
Date: 09-2000
Abstract: We present experimental evidence for the existence of a space charge in the environmental scanning electron microscope. Space charge formation is attributed to differences in the mobilities of negative and positive charge carriers in the imaging gas. A model is proposed for the behavior of space charge during image acquisition. The effects of space charge on images acquired using the gaseous secondary electron detector, ion current, and backscattered electron signals are interpreted using the proposed model.
Electron beam induced chemical dry etching and imaging in gaseous NH3environments
Publisher: IOP Publishing
Date: 24-08-2012
DOI: 10.1088/0957-4484/23/37/375302
Abstract: We report the use of ammonia (NH(3)) vapor as a new precursor for nanoscale electron beam induced etching (EBIE) of carbon, and an efficient imaging medium for environmental scanning electron microscopy (ESEM). Etching is demonstrated using amorphous carbonaceous nanowires grown by electron beam induced deposition (EBID). It is ascribed to carbon volatilization by hydrogen radicals generated by electron dissociation of NH(3) adsorbates. The volatilization process is also effective at preventing the buildup of residual hydrocarbon impurities that often compromise EBIE, EBID and electron imaging. We also show that ammonia is a more efficient electron imaging medium than H(2)O, which up to now has been the most commonly used ESEM imaging gas.
Self-organized materials: From organic molecules to genetically engineered gold-binding proteins
Publisher: IEEE
Date: 2006
Growth and characterization of ZnO nanoparticles
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 11-2005
Effects of lithium doping and post-processing on the cathodoluminescence of zinc oxide nanoparticles
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S1431927606062404
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006
Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO
Publisher: AIP Publishing
Date: 21-08-2006
DOI: 10.1063/1.2338552
Abstract: The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450–720nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112¯0] [21¯1¯0], and [12¯10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390nm).
Diffusion synthesis and electronic properties of Fe-doped ZnO
Publisher: Elsevier BV
Date: 02-2010
Interactions Between Pigments in 19th and Early 20th Century Oil Paintings - In Situ Studies Using the Environmental Scanning Electron Microscope
Publisher: Oxford University Press (OUP)
Date: 08-2004
DOI: 10.1017/S1431927604881376
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Imaging deep trap distributions by low vacuum scanning electron microscopy
Publisher: AIP Publishing
Date: 12-02-2007
DOI: 10.1063/1.2644159
Abstract: The distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy.
Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence
Publisher: Elsevier BV
Date: 10-2006
Strain relaxation in GaNxP1−x alloy: effect on optical properties
Publisher: Elsevier BV
Date: 12-2001
Iron and Spinel Precipitation in Iron‐Doped Sapphire
Publisher: Wiley
Date: 04-1991
Response to comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence' [Appl. Phys. Lett. 97, 166101 (2010)]
Publisher: AIP Publishing
Date: 18-10-2010
DOI: 10.1063/1.3499663
Accurate Oh Bond Angle Determination In Trigonal Crystals
Publisher: SAGE Publications
Date: 07-1991
Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 09-1998
Towards p-type doping of ZnO by ion implantation
Publisher: Springer Science and Business Media LLC
Date: 2004
Abstract: Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO s les were implanted with high dose (1.4 × 10 17 ions/cm 2 ) 300 keV As ions at room temperature. Furnace annealing of s les in the range of 900°C to 1200°C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.
Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
Publisher: AIP Publishing
Date: 02-2007
DOI: 10.1063/1.2718539
Abstract: Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes. For Mn2+ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly, it has been reported that in nanostructures of ZnMnS the T14 to A16 intra-shell transition of Mn2+ results in a bright photoluminescence characterized by a short PL decay time. The model of a quantum confined atom was introduced to explain the observed experimental results. It was later claimed that this model is incorrect. Based on the results of our photoluminescence, photoluminescence kinetics, time-resolved photoluminescence, electron spin resonance, and optically detected magnetic resonance investigations, we confirm photoluminescence enhancement and decrease of photoluminescence lifetime and relate these effects to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. This mechanism is active in both bulk and in low-dimensional structures, but is significantly enhanced in nanostructure s les.
Contact-induced defect propagation in ZnO
Publisher: AIP Publishing
Date: 10-06-2002
DOI: 10.1063/1.1486264
Abstract: Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in s les loaded up to 50 mN with an ∼4.2 μm radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects. Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices.
Controlling the properties of InGaAs quantum dots by selective-area epitaxy
Publisher: AIP Publishing
Date: 08-03-2005
DOI: 10.1063/1.1875745
Abstract: Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.
Characteristics of point defects in the green luminescence from Zn- and O-rich ZnO
Publisher: American Physical Society (APS)
Date: 10-09-2012
Indirect excitons in hydrogen-doped ZnO
Publisher: IOP Publishing
Date: 17-02-2017
Role of Activated Chemisorption in Gas-Mediated Electron Beam Induced Deposition
Publisher: American Physical Society (APS)
Date: 03-10-2012
Luminescent properties of ZnO nanowires and as-grown ensembles
Publisher: IOP Publishing
Date: 04-09-2008
DOI: 10.1088/0957-4484/19/41/415606
Abstract: Vertically aligned ZnO nanowires were synthesized on a sapphire ([Formula: see text]) substrate by vapour deposition and their light-emitting properties were characterized using photoluminescence and cathodoluminescence spectroscopies. Besides the nanowires, there exists a mosaic ZnO film on the substrate surface. Comparison of the luminescent properties of the as-grown ensemble and the nanowires extracted from it shows that the mosaic film is the major source of the defect-related green emission while the nanowires possess highly crystalline quality with virtually no defects. Photoemission spectroscopy shows that the valence band states associated with O 2p from the as-grown s le are diminished compared with those from the extracted nanowires. These findings suggest that the green emission partly arises from oxygen vacancies located on the surface of the mosaic film.
Origin of excitonic emission suppression in an individual ZnO nanobelt
Publisher: American Chemical Society (ACS)
Date: 18-06-2008
DOI: 10.1021/JP802814C
X-Ray Micronalaysis in the Environmentl SEM Using Mapping and Fourier Deconvolution Techniques
Publisher: Oxford University Press (OUP)
Date: 08-2001
DOI: 10.1017/S1431927600029615
Abstract: X-ray microanalysis of any type of specimen in its natural state without the use of conventional SEM specimen preparation techniques has immense potential in a wide range of scientific and industrial applications. This capability would be particularly useful in microanalysis applications where it is highly desirable to preserve the integrity of the specimen, for ex le in semiconductor failure analysis and forensic investigations. in principle, this X-ray microanalysis goal can be achieved in an environmental or variable pressure scanning electron microscope (VPSEM) because specimen charging and vacuum stability problems are negated by the presence of a gas in the specimen chamber. However, the accuracy and spatial resolution of X-ray microanalysis in the VPSEM is significantly degraded by the chamber gas as it scatters primary beam electrons, generating spurious X-rays far from the analysis point. to date, two different X-ray measurement strategies have been developed to facilitate X-ray microanalysis at high chamber pressure in the VPSEM.
Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments
Publisher: American Physical Society (APS)
Date: 03-10-2006
Depth profiling of GaN by cathodoluminescence microanalysis
Publisher: AIP Publishing
Date: 22-02-1999
DOI: 10.1063/1.123460
Abstract: We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON–VGa)2− complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption.
Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures
Publisher: AIP Publishing
Date: 22-04-2005
DOI: 10.1063/1.1920418
Abstract: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.
Effects of strain on the valence band structure and exciton-polariton energies in ZnO
Publisher: American Physical Society (APS)
Date: 30-12-2013
Cathodoluminescence Efficiency Dependence on Excitation Density in n-Type Gallium Nitride
Publisher: Oxford University Press (OUP)
Date: 14-03-2003
DOI: 10.1017/S1431927603030204
Abstract: Cathodoluminescence (CL) spectra from silicon doped and undoped wurtzite n-type GaN have been measured in a SEM under a wide range of electron beam excitation conditions, which include accelerating voltage, beam current, magnification, beam diameter, and specimen temperature. The CL intensity dependence on excitation density was analyzed using a power-law model ( I CL ∝ J m ) for each of the observed CL bands in this material. The yellow luminescence band present in both silicon and undoped GaN exhibits a close to cube root ( m = 0.33) dependence on electron beam excitation at both 77 K and 300 K. However, the blue (at 300 K) and donor-acceptor pair (at 77 K) emission peaks observed in undoped GaN follow power laws with exponents of m = 1 and m = 0.5, respectively. As expected from its excitonic character, the near band edge emission intensity depends linearly ( m = 1) in silicon doped GaN and superlinearly ( m = 1.2) in undoped GaN on the electron beam current. Results show that the intensities of the CL bands are highly dependent not only on the defect concentration but also on the electron-hole pair density and injection rate. Furthermore, the size of the focussed electron beam was found to have a considerable effect on the relative intensities of the CL emission peaks. Hence SEM parameters such as the objective lens aperture size, astigmatism, and the condenser lens setting must also be considered when assessing CL data based on intensity measurements from this material.
Charge state switching of Cu acceptors in ZnO nanorods
Publisher: AIP Publishing
Date: 20-03-2017
DOI: 10.1063/1.4978761
Abstract: Undoped and Ga-doped ZnO nanorods both exhibit an intense green luminescence (GL) band centered at ∼2.4 eV. Unlike the defect-related GL in undoped nanorods, the GL band in Ga-doped nanorods displays a periodic fine structure separated by 72 meV, which consists of doublets with an energy spacing of 30 ± 3 meV. The emergence of the structured GL is due to the Cu+ state being stabilized by the rise in the Fermi level above the 0/- (Cu2+/Cu+) charge transfer level as a result of Ga donor incorporation. From a combination of optical characterization and simulation using the Brownian oscillator model, the doublet fine structures are shown to originate from two hole transitions with the Cu+ state located at 390 meV above the valence band.
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
Publisher: AIP Publishing
Date: 07-02-2011
DOI: 10.1063/1.3554434
Abstract: We report the phonon deformation potentials of wurtzite GaN and ZnO for all zone center optical phonon modes determined by Raman measurements as a function of uniaxial pressure. Despite all the structural and optical similarities between these two material systems, the pressure dependency of their vibrational spectra exhibits fundamental distinctions, which is attributed to their different bond ionicities. In addition, the LO-TO splitting of the A1 and E1 phonon modes is analyzed which yields insight into the uniaxial pressure dependency of Born’s transverse effective charge eT∗.
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Publisher: IEEE
Date: 2004
Towards p-type doping of ZnO by ion implantation
Publisher: IEEE
Date: 2005
TG-MS characterization of the reaction products of cadmium yellow and malachite artist’s pigments
Publisher: Springer Science and Business Media LLC
Date: 04-2007
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
Publisher: American Physical Society (APS)
Date: 26-07-2011
Fe-Centers in GaN as Candidates for Spintronics Applications
Publisher: Springer Science and Business Media LLC
Date: 2005
DOI: 10.1557/PROC-0892-FF07-05-EE05-05
Abstract: The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 500 µm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×10 17 to 2×10 20 was studied by means of photoluminescence, photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe 3+/2+ charge transfer (CT) level was determined to be at 2.86 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe 2+ , h VB ) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe 3+ . FTIR transmission measurements revealed an internal ( 5 E- 5 T 2 ) transition of Fe 2+ around 400 eV which, until now, was believed to be degenerate with the conduction band. Consequently, a second CT band was detected in PLE spectra.
Cathodoluminescence microscopy and spectroscopy of opto-electronic materials
Publisher: Springer Science and Business Media LLC
Date: 04-05-2006
Kinetics of charge carrier recombination in beta-Ga2O3 crystals
Publisher: arXiv
Date: 2020
Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures
Publisher: Springer Science and Business Media LLC
Date: 02-2000
Abstract: In this paper we evaluate the in-depth homogeneity of GaN epilayers and the influence of electric field present in strained GaN/AlGaN heterostructures and quantum wells on the yellow and “edge” emission in GaN and AlGaN. Our depth-profiling cathodoluminescence measurements show an increased accumulation of defects at the interface. Inhomogeneities in the doping level are reflected by the enhancement of the yellow emission in the interface region. The piezoelectric effect is found to strongly reduce the emission from the strained AlGaN quantum-well barriers. We also show that Ga droplets, commonly found on surfaces of s les grown in Ga-rich conditions, screen the internal electric field in a structure and thus result in a local enhancement of the edge emission intensity.
X-ray mapping and post processing
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S1431927606062428
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006
Red Luminescence in H-doped beta-Ga2O3
Publisher: arXiv
Date: 2020
The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Publisher: Elsevier BV
Date: 02-2020
Use of X-Ray Mapping to Investigate Art Works Before their Restoration
Publisher: Oxford University Press (OUP)
Date: 07-2011
DOI: 10.1017/S1431927611009822
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
SEM characterization of nanodevices and nanomaterials
Publisher: IEEE
Date: 2006
Imaging fundamental electronic excitations at high spatial resolution using scanning cathodoluminescence microscopy
Publisher: Oxford University Press (OUP)
Date: 07-2009
DOI: 10.1017/S1431927609098614
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO
Publisher: arXiv
Date: 2011
Single photon emission from ZnO nanoparticles
Publisher: AIP Publishing
Date: 30-06-2014
DOI: 10.1063/1.4872268
Abstract: Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work, we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters exhibit bright broadband fluorescence in the red spectral range centered at 640 nm with polarized excitation and emission. The studied emitters showed continuous blinking however, bleaching can be suppressed using a polymethyl methacrylate coating. Furthermore, hydrogen termination increased the density of single photon emitters. Our results will contribute to the identification of quantum systems in ZnO.
Effects of annealing on optical and structural properties of zinc oxide nanocrystals
Publisher: Wiley
Date: 25-08-2015
Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO
Publisher: AIP Publishing
Date: 24-02-2020
DOI: 10.1063/1.5134555
Abstract: Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873 K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28 eV and green luminescence (GL) at 2.39 eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving ZniandVZn pairs. The intensity of an orange luminescence centered at 2.01 eV was unaffected by the electric field and is assigned to substitutional Li acceptors.
Identification and mapping of the amorphous phase in plasma-sprayed hydroxyapatite coatings using scanning cathodoluminescence microscopy
Publisher: Springer Science and Business Media LLC
Date: 12-1998
Abstract: The presence and distribution of the amorphous phase is a key factor in the performance and bone-bonding behavior of plasma-sprayed hydroxyapatite coatings. Microanalysis of coatings was conducted with microprobe Raman and scanning cathodoluminescence microscopy. It was confirmed that the darker regions in polished cross sections represent the amorphous phase. The more intense cathodoluminescence emission from the amorphous phase during electron-beam irradiation compared with the crystalline phase was used to detect the two structurally different areas within the s le. By selecting the peak of the emission at 450 nm it was possible to raster the surface with the electron beam and produce a map of the amorphous phase in polished sections, a fracture surface and an as-sprayed surface of the plasma-sprayed coating. Cathodoluminescence microscopy, based on the different light emission from the amorphous phase and hydroxyapatite, is a useful tool for identifying and mapping of the amorphous-phase constituent in plasma-sprayed coatings.
Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 06-2003
Observation of whispering gallery modes from hexagonal ZnO microdisks using cathodoluminescence spectroscopy
Publisher: AIP Publishing
Date: 21-10-2013
DOI: 10.1063/1.4826481
Abstract: Zinc oxide hexagonal microdisks with diameters ranging from 3 μm up to 15 μm were fabricated by thermal chemical vapour deposition. Optical characterisation of ZnO microdisks was performed using low temperature (80 K) cathodoluminescence (CL) imaging and spectroscopy. The microdisks exhibited green luminescence locally distributed near the hexagonal boundary of the ZnO microdisks. High resolution CL spectra of the ZnO microdisks revealed whispering gallery modes (WGMs) emission. The experimentally observed WGMs were in excellent agreement with the predicted theoretical positions calculated using a plane wave model. This work could provide the means for ZnO microdisk devices operating in the green spectral range.
Shallow carrier traps in hydrothermal ZnO crystals
Publisher: arXiv
Date: 2015
Transient analysis of gaseous electron-ion recombination in the environmental scanning electron microscope
Publisher: Wiley
Date: 03-2006
DOI: 10.1111/J.1365-2818.2006.01554.X
Abstract: Most of the work carried out in relation to contrast mechanisms and signal formation in an environmental scanning electron microscope has yet to consider the time dependent aspects of image generation at a quantitative level. This paper quantitatively describes gaseous electron-ion recombination (also known as 'signal scavenging') in an environmental scanning electron microscope at a transient level by utilizing the dark shadows/streaks seen in gaseous secondary electron detector images of alumina (Al2O3) immediately after a region of enhanced secondary electron emission is encountered by a scanning electron beam. The investigation firstly derives a theoretical model of gaseous electron-ion recombination that takes into consideration transients caused by the time constant of the gaseous secondary electron detector electronics and external circuitry used to generate images. Experimental data of pixel intensity versus time of the streaks are then simulated using the model enabling the relative magnitudes of (i) ionization and recombination rates, (ii) recombination coefficients and (iii) electron drift velocities, as well as absolute values of the total time constant of the gaseous secondary electron detection system and external circuitry, to be determined as a function of microscope operating parameters such as gaseous secondary electron detector bias, s le-electrode separation, imaging gas pressure, and scan speed. The results revealed, for the first time, the exact dependence that the effects of secondary electron-ion recombination on signal formation has on reduced electric field and time in an environmental scanning electron microscope. Furthermore, the model implicitly demonstrated that signal loss as a consequence of field retardation due to ion space charges, although obviously present, is not the foremost phenomenon causing streaking in images, as previously thought.
Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer
Publisher: IOP Publishing
Date: 15-07-2016
<title>Effects of localization in CdTe-based quantum well structures</title>
Publisher: SPIE
Date: 10-04-2001
DOI: 10.1117/12.425475
Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
Publisher: AIP Publishing
Date: 04-11-2002
DOI: 10.1063/1.1519358
Abstract: The effect of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and native defects in activated metalorganic vapor phase epitaxy-grown Mg-doped (p-type) GaN layers was studied by cathodoluminescence (CL) microanalysis and spectroscopy at temperatures between 80 and 300 K. The LEEBI treatment dissociates (Mg–H)0 complexes producing (i) at 300 K, a significant increase in a free-to-bound transition (e,Mg0) centered at 3.26 eV and (ii) at 80 K, a substantial decrease in a H–Mg donor–acceptor pair emission at 3.27 eV. In-plane and depth-resolved CL imaging reveals a direct correlation between the spatial distribution of the injected carriers and the depth and lateral distribution of activated Mg acceptors. This finding strongly suggests that hydrogen dissociation results from electron-hole recombination at hydrogen defect complexes rather than heating by the electron beam. The results at 80 K indicate that the process of dissociation of hydrogen from (Mg–H)0 complexes is accompanied by a generation of additional defect centers. It is proposed that following LEEBI hydrogen does not leave the specimen, but instead associates with nitrogen vacancies, generating additional recombination channels.
Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN
Publisher: Wiley
Date: 22-08-2003
Cathodoluminescence study of ion implanted GaN
Publisher: IEEE
Date: 2000
Crosstalk Due To Optical Fiber Nonlinearities In Wdm Catv Lightwave Systems
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1999
DOI: 10.1109/50.793751
Erratum: Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014 J. Phys. D: Appl. Phys. 47 342001)
Publisher: IOP Publishing
Date: 10-09-2014
Cathodoluminescence characterisation of vapour transport grown ZnO structures
Publisher: IEEE
Date: 02-2010
Dissociation of H-related defect complexes in Mg-doped GaN
Publisher: American Physical Society (APS)
Date: 17-03-2004
Vacancy cluster in ZnO films grown by pulsed laser deposition
Publisher: Springer Science and Business Media LLC
Date: 05-03-2019
DOI: 10.1038/S41598-019-40029-3
Abstract: Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant V Zn -related defect in the as-grown undoped ZnO grown with relative low oxygen pressure P(O 2 ) is a vacancy cluster (most likely a V Zn -nV O complex with n = 2, 3) rather than the isolated V Zn which has a lower formation energy. Annealing these s les at 900 °C induces out-diffusion of Zn from the ZnO film into the sapphire creating the V Zn at the film/sapphire interface, which favors the formation of vacancy cluster containing relatively more V Zn . Increasing the P(O 2 ) during growth also lead to the formation of the vacancy cluster with relatively more V Zn . For Ga-doped ZnO films, the oxygen pressure during growth has significant influence on the electron concentration and the microstructure of the V Zn -related defect. Green luminescence (GL) and yellow luminescence (YL) were identified in the cathodoluminescence study (CL) study, and both emission bands were quenched after hydrogen plasma treatment. The origin of the GL is discussed.
Enhanced high speed SE imaging in a VPSEM using a Frisch grid
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S1431927606069522
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
Doping‐dependence of subband energies in quantized electron accumulation at InN surfaces
Publisher: Wiley
Date: 02-2007
Electron irradiationinduced changes in the surface topography of silicon dioxide
Publisher: AIP Publishing
Date: 15-10-1996
DOI: 10.1063/1.363379
Abstract: The irradiation of crystalline (α-SiO2) and amorphous (a-SiO2) silicon dioxide with a stationary electron beam produces characteristic changes in the surface topography. The development of these changes has been investigated using cathodoluminescence spectroscopy and microscopy, scanning probe (atomic force) microscopy, and scanning electron microscopy. Electron irradiation produces a permanent volume increase on (crystalline) α-SiO2, while in (amorphous) a-SiO2 an initial small volume increase is followed by volume loss as irradiation continues. The observed changes are consistent with electromigration of oxygen under the influence of the electric field induced by charge trapping at preexisting or irradiation-induced defects. Oxygen enrichment may produce expansion of the surface region due to the formation of peroxy linkage defects. In a-SiO2, charges trapped by defects at grain boundaries produce enhanced electric fields which may result in volume reduction at the surface, when critical field strengths are exceeded. The observed volume reductions may be attributed to electron stimulated desorption of constituents, in particular oxygen mass loss, and densification of the surface region associated with the formation of oxygen-deficient defect centers.
Defect Clustering In H,Ti-alpha-Al2o3
Publisher: Elsevier BV
Date: 1991
Characterization of a novel fluxless surface preparation process for die interconnect bonding
Publisher: IEEE
Date: 05-2012
Excitons and charges at organic semiconductor heterojunctions
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C1FD00104C
Abstract: All-organic heterojunction solar cells now provide very high quantum efficiencies for charge generation and rapidly-improving power conversion efficiencies. Charge generation and separation however, must overcome the strong Coulomb interactions between electrons and holes in these materials that is manifest also through the large exchange energies usually observed. We show for a polymer-polymer system with low charge generation efficiency that this arises through intersystem crossing from the photogenerated charge-transfer state to a lower lying triplet state, mediated by the proton hyperfine interaction, and that the activation barrier for full separation of electrons and holes is of the order of 250 meV. We observe, using transient optical spectroscopy, the processes of charge separation, recombination and sweep-out in efficient polymer-fullerene devices. We report also on the process of singlet exciton fission to form a pair of triplet excitons in pentacene that can later be dissociated against a heterojunction formed with C60.
V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
Publisher: IEEE
Date: 1996
Luminescence properties of poly- (phenylene vinylene) derivatives
Publisher: Wiley
Date: 20-09-2008
DOI: 10.1002/PI.2373
Time resolved analysis of the positive ion dynamics in the variable pressure scanning electron microscope
Publisher: Oxford University Press (OUP)
Date: 08-2002
Nanostructure Fabrication by Ultra-high Resolution Environmental Scanning Electron Microscopy
Publisher: Oxford University Press (OUP)
Date: 08-2007
X-ray mapping using a multiple-EDS (DUAL) detectors
Publisher: Oxford University Press (OUP)
Date: 31-07-2006
DOI: 10.1017/S143192760606243X
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006
Defect-free ZnO nanorods with high angular distribution for enhanced excitonic emission
Publisher: Springer Science and Business Media LLC
Date: 08-03-2023
DOI: 10.1557/S43578-023-00941-X
Abstract: Low-temperature hydrothermal growth has emerged as a popular method for the fabrication of ZnO nanorods (NRs), increasing the functionality and utility of ZnO-based devices. In this work, we study the influence of growth time, temperature and seed layer on the dimensions and angular distribution of ZnO NRs. High-quality NRs with a crisscrossed 60° angular distribution have been grown with a 20–60 nm diameter and 600 nm length. We show that, within the ideal range of growth parameters, the growth time and temperature have no controllable influence on NR diameter and length, while the deposition method and size of the pre-growth deposited ZnO seeds affects diameter and NR angular alignment. We demonstrate advantages of using crisscross-aligned NRs over planar ZnO for the enhancement of ZnO excitonic emission by optical coupling with gold nanoparticles. These results can be readily adapted for applications that involve surface coating-mediated enhancement of both light emission and injection. Graphical abstract
Probing carrier behavior at the nanoscale in gallium nitride using low voltage cathodoluminescence
Publisher: Oxford University Press (OUP)
Date: 09-12-2006
DOI: 10.1017/S1431927606060041
Abstract: Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the s le preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.
Band offsets in In0.15 Ga0.85 As/GaAs and In0.15 Ga0.85 As/Al0.15 Ga0.85 As studied by photoluminescence and cathodoluminescence
Publisher: Elsevier BV
Date: 06-1998
Luminescence of InGaN MQWs grown on misorientated GaN substrates
Publisher: IEEE
Date: 12-2010
Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy
Publisher: AIP Publishing
Date: 15-12-2008
DOI: 10.1063/1.3040702
Abstract: We present the results of cathodoluminescence experiments on a set of Fe doped GaN s les with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm−3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)–A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.
In-depth and in-plane profiling of light emission properties of InGaN-based laser diode
Publisher: Wiley
Date: 2004
Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers
Publisher: Wiley
Date: 2004
X-ray spectrometry investigation of electrical isolation in GaN
Publisher: AIP Publishing
Date: 15-03-2002
DOI: 10.1063/1.1452759
Abstract: Electrical isolation of n-type GaN epilayers bombarded with MeV light ions is studied by energy dispersive x-ray spectrometry (EDS). We show that the maximum bremsstrahlung x-ray energy (the Duane–Hunt limit) can be used to monitor the isolation process in GaN. This method allows the dose region above the threshold dose for isolation to be conveniently studied, whereas the application of conventional (low-voltage) electrical techniques in this dose range with large sheet resistances of the material (≳1011 Ω/sq) is often impossible due to comparable parasitic resistances of the experimental setup. A correlation of EDS and resistance measurements of GaN strongly suggests that the magnitude of s le charging scales with the number of ion-beam-produced deep electron traps which are empty at equilibrium. The results presented demonstrate the utility of EDS as a powerful and simple technique to study electrical isolation in wide band-gap semiconductors.
Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 10-2002
Equilibration In Defect Clustering Reactions
Publisher: Elsevier BV
Date: 11-1990
Effects of excitation density on cathodoluminescence from GaN
Publisher: AIP Publishing
Date: 10-2001
DOI: 10.1063/1.1408273
Abstract: Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor–acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN.
GSR analysis in the environmental scanning electron microscope
Publisher: Oxford University Press (OUP)
Date: 08-2004
DOI: 10.1017/S143192760488588X
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Imaging Deep Trap Distributions by Environmental Scanning Electron Microscopy
Publisher: Oxford University Press (OUP)
Date: 08-2007
Color tuning of white light emission from thin films of ZnSe
Publisher: Elsevier BV
Date: 07-2007
The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Publisher: arXiv
Date: 2019
Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Publisher: arXiv
Date: 2019
Dynamics of Light Emission in CdMnS Nanoparticles
Publisher: Institute of Physics, Polish Academy of Sciences
Date: 10-2005
A luminescence study of porous diatoms
Publisher: Elsevier BV
Date: 12-2005
Indentation-induced damage in GaN epilayers
Publisher: AIP Publishing
Date: 21-01-2002
DOI: 10.1063/1.1436280
Abstract: The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence (CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during loading when the maximum load is above the elastic-plastic threshold, and such a behavior can be correlated with multiple slip bands revealed by XTEM. No evidence of pressure-induced phase transformations is found from within the mechanically damaged regions using selected-area diffraction patterns. The main deformation mechanism appears to be the nucleation of slip on the basal planes, with dislocations being nucleated on additional planes on further loading. XTEM reveals no cracking or delamination in any of the s les studied for loads of up to 250 mN.
Direct experimental evidence for the role of oxygen in the luminescent properties of gan
Publisher: American Physical Society (APS)
Date: 15-01-1999
Revisiting electrochromism in InN
Publisher: Wiley
Date: 11-04-2005
Growth of GaN films by combined laser and microwave plasma enhanced chemical vapour deposition
Publisher: Elsevier BV
Date: 06-1995
A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation
Publisher: IEEE
Date: 12-2010
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
Publisher: American Physical Society (APS)
Date: 07-11-2014
Cathodoluminescence Emission for Differentiating the Degree of Carbonation in Apatites
Publisher: Trans Tech Publications, Ltd.
Date: 09-2001
Assessment of SEM Image Quality using 1D Power Spectral Density Estimation
Publisher: Oxford University Press (OUP)
Date: 07-2009
DOI: 10.1017/S1431927609098821
Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Optical properties of Mn-doped GaN
Publisher: Springer Science and Business Media LLC
Date: 2004
Abstract: Molecular beam epitaxy-grown GaN with different Mn concentrations (5–23 × 10 cm -3 ) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peak was attributed to an internal T2∼ E transition of the deep neutral Mn 3+ state since its intensity scaled with the Mn 3+ concentration. The CL measurements showed that Mn-doping concentrations around 10 20 cm- 3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of VGa. In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.
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View Funded ActivityResearch Networks - Grant ID: RN0460002
Start Date: 08-2004
End Date: 08-2009
Amount: $2,000,000.00
Funder: Australian Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE0883056
Start Date: 04-2008
End Date: 06-2009
Amount: $300,000.00
Funder: Australian Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE0989920
Start Date: 2009
End Date: 12-2009
Amount: $750,000.00
Funder: Australian Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE180100030
Start Date: 2018
End Date: 12-2019
Amount: $541,705.00
Funder: Australian Research Council
View Funded ActivitySpecial Research Initiatives - Grant ID: SR0354682
Start Date: 12-2003
End Date: 12-2004
Amount: $10,000.00
Funder: Australian Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE200100003
Start Date: 2020
End Date: 12-2020
Amount: $400,000.00
Funder: Australian Research Council
View Funded ActivityLinkage Infrastructure, Equipment And Facilities - Grant ID: LE160100054
Start Date: 04-2016
End Date: 04-2018
Amount: $750,000.00
Funder: Australian Research Council
View Funded ActivityResearch Networks - Grant ID: RN0459611
Start Date: 07-2004
End Date: 12-2010
Amount: $1,900,000.00
Funder: Australian Research Council
View Funded Activity