ORCID Profile
0009-0001-5788-3153
Current Organisations
TH Köln - University of Applied Sciences
,
UNSW Sydney
,
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, Stuttgart DE
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Publisher: IEEE
Date: 06-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2022
Publisher: Elsevier BV
Date: 04-2002
Publisher: Wiley
Date: 09-12-2019
DOI: 10.1002/PIP.3230
Abstract: In this work, we integrate defect engineering methods of gettering and hydrogenation into silicon heterojunction solar cells fabricated using low‐lifetime commercial‐grade p‐type Czochralski‐grown monocrystalline and high‐performance multicrystalline wafers. We independently assess the impact of gettering on the removal of bulk impurities such as iron as well as the impact of hydrogenation on the passivation of grain boundaries and B‐O defects. Furthermore, we report for the first time the susceptibility of heterojunction devices to light‐ and elevated temperature–induced degradation and investigate the onset of such degradation during device fabrication. Lastly, we demonstrate solar cells with independently verified 1‐sun open‐circuit voltages of 707 and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, with a starting bulk minority‐carrier lifetime below 40 microseconds. These remarkably high open‐circuit voltages reveal the potential of inexpensive low‐lifetime p‐type silicon wafers for making devices with efficiencies without needing to shift towards n‐type substrates.
Publisher: IEEE
Date: 2000
Publisher: IEEE
Date: 05-2008
Publisher: AIP Publishing
Date: 2019
DOI: 10.1063/1.5125874
Publisher: Wiley
Date: 22-01-2018
Publisher: Elsevier BV
Date: 04-2002
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
Publisher: IEEE
Date: 06-2018
Publisher: Elsevier BV
Date: 04-2013
Publisher: Elsevier BV
Date: 08-2015
Publisher: IEEE
Date: 06-2010
Publisher: Wiley
Date: 08-2019
Publisher: IEEE
Date: 06-2009
Publisher: Elsevier BV
Date: 09-2017
Publisher: Elsevier BV
Date: 11-1997
Publisher: Elsevier BV
Date: 2011
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2017
Publisher: IEEE
Date: 06-2012
Publisher: Elsevier BV
Date: 2014
Publisher: IEEE
Date: 06-2012
Publisher: AIP Publishing
Date: 21-03-2016
DOI: 10.1063/1.4944788
Abstract: We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.
Publisher: Wiley
Date: 17-08-2016
Publisher: Elsevier BV
Date: 02-1999
Publisher: Elsevier BV
Date: 02-1999
Publisher: IEEE
Date: 06-2018
Publisher: Wiley
Date: 20-01-2011
Publisher: Elsevier BV
Date: 08-2016
Publisher: Wiley
Date: 06-12-2016
DOI: 10.1002/PIP.2729
Location: Germany
No related grants have been discovered for Roland Einhaus.